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1. 发明授权

US07517554B2 Process for producing nanostructure of mixed film of Al, Si, and/or Ge 失效
标题翻译：制备Al，Si和/或Ge混合膜的纳米结构的方法
公开(公告)号：US07517554B2
公开(公告)日：2009-04-14
申请号：US11339627
申请日：2006-01-26
申请人： Tatsuya Saito , Tohru Den , Kazuhiko Fukutani , Aya Imada
发明人： Tatsuya Saito , Tohru Den , Kazuhiko Fukutani , Aya Imada
IPC分类号： C23C8/00
CPC分类号： C23C14/5873 , B82Y30/00 , C23C14/165
摘要： A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of SixGe1-x (0≦X≦1), and cylindrical portions mainly composed of aluminum having a diameter of not larger 30 nm in the matrix. In the process, the mixed film is formed at a film-forming rate of not higher than 150 nm/min.
摘要翻译：提供一种制造纳米结构的方法，其能够通过成膜条件控制孔径和孔间隔。该方法产生相对于铝含有20〜70原子％含有硅和锗的铝 - 硅 - 锗混合膜的纳米结构，该混合膜由组成为主要由硅和锗组成的基体构成 SixGe1-x（0 <= X <= 1）的比例，以及主要由直径不大于30nm的铝构成的圆筒部。在该过程中，以不高于150nm / min的成膜速度形成混合膜。

2. 发明授权

US07510780B2 Structured material, magnetic recording medium utilizing the same, and magnetic recording/reproducing apparatus 失效
标题翻译：结构材料，利用其的磁记录介质和磁记录/再现装置
公开(公告)号：US07510780B2
公开(公告)日：2009-03-31
申请号：US10532232
申请日：2003-10-22
申请人： Nobuhiro Yasui , Tohru Den
发明人： Nobuhiro Yasui , Tohru Den
IPC分类号： C25D5/26
CPC分类号： G11B5/7325 , C23C14/025 , C23C14/185 , C23C28/322 , C23C28/345 , Y10T428/11 , Y10T428/12861
摘要： The invention provides a structured material composed by including a noble metal, in which an oriented layer is formed on a layer containing a Group 4A metal. The invention enables to form an oriented layer, which has required a high temperature for formation, by a low temperature process.
摘要翻译：本发明提供一种结构材料，其包括贵金属，其中在含有4A族金属的层上形成取向层。本发明能够通过低温工艺形成需要高温成形的取向层。

3. 发明申请

US20080315745A1 ELECTRONIC DEVICE CONTAINING CARBON NANOTUBES AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：含有碳纳米管的电子设备及其制造方法
公开(公告)号：US20080315745A1
公开(公告)日：2008-12-25
申请号：US12197842
申请日：2008-08-25
申请人： Tohru Den , Tatsuya Iwasaki
发明人： Tohru Den , Tatsuya Iwasaki
IPC分类号： H01J1/02 , D01F9/12
CPC分类号： D01F9/127 , G01Q60/16 , G01Q60/38 , G01Q70/12 , H01J1/14 , H01J1/30 , H01J1/304 , H01J9/025 , H01J2201/30469 , Y10S977/932 , Y10S977/939
摘要： An electronic device including a pair of electrodes disposed on a substrate and carbon nanotubes electrically connecting the electrodes. A method for manufacturing this device in which the electrodes are disposed on the substrate and the nanotubes are prepared to electrically connect the electrodes.
摘要翻译：一种电子设备，包括设置在基板上的一对电极和电连接电极的碳纳米管。制造该器件的方法，其中电极设置在衬底上，并且准备纳米管以电连接电极。

4. 发明授权

US07453193B2 Electronic device containing a carbon nanotube 失效
标题翻译：含有碳纳米管的电子器件
公开(公告)号：US07453193B2
公开(公告)日：2008-11-18
申请号：US11556254
申请日：2006-11-03
申请人： Tohru Den , Tatsuya Iwasaki
发明人： Tohru Den , Tatsuya Iwasaki
IPC分类号： H01J1/30
CPC分类号： D01F9/127 , G01Q60/16 , G01Q60/38 , G01Q70/12 , H01J1/14 , H01J1/30 , H01J1/304 , H01J9/025 , H01J2201/30469 , Y10S977/932 , Y10S977/939
摘要： An electronic device in which a substrate with a pair of electrodes is provided and a carbon nanotube is formed or arranged in relation to the electrodes.
摘要翻译：提供具有一对电极的基板和相对于电极形成或布置碳纳米管的电子设备。

5. 发明授权

US07349242B2 Magnetic device 失效
标题翻译：磁性装置
公开(公告)号：US07349242B2
公开(公告)日：2008-03-25
申请号：US10968902
申请日：2004-10-21
申请人： Tohru Den
发明人： Tohru Den
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： B82Y25/00 , B82Y10/00 , G11C11/16 , H01F10/324 , Y10T428/1114
摘要： A magnetic device has a layer containing fine pores and having wirings on both faces of the layer formed on a substrate, wherein at least a part of the pores are filled with a layered column formed by stacking magnetic layers and nonmagnetic layers alternately, and at least a part of the pores filled with a conductive column as writing wires for writing into the magnetic layers in the adjacent pores. The fine pores may be nano-holes of alumina formed by anodic oxidation. A part of the pores may serve to intercept a magnetic field. The magnetic layer may contain Co, and the nonmagnetic layer and/or the writing wire may contain Cu. The pores may be arranged in a honeycomb arrangement or a rectangular array. The ratio of the sectional area S (cm2) of the pore and the length (cm) of the pore satisfy the relation: 105 105.
摘要翻译：磁性器件具有含有细孔的层，并且在形成在衬底上的层的两个表面上具有布线，其中至少部分孔填充有通过交替层叠磁性层和非磁性层而形成的层状结构，并且至少填充有导电柱的孔的一部分作为用于写入相邻孔中的磁性层的书写线。细孔可以是通过阳极氧化形成的氧化铝的纳米孔。一部分孔可用于截取磁场。磁性层可以含有Co，非磁性层和/或书写线可以含有Cu。孔可以布置成蜂窝布置或矩形阵列。孔的截面积S（cm 2）与孔的长度（cm）的比例满足关系式：10 10 < SUP> 5 。

6. 发明授权

US07319069B2 Structure having pores, device using the same, and manufacturing methods therefor 失效
标题翻译：具有孔的结构，使用其的装置及其制造方法
公开(公告)号：US07319069B2
公开(公告)日：2008-01-15
申请号：US11354813
申请日：2006-02-16
申请人： Tohru Den , Tatsuya Iwasaki
发明人： Tohru Den , Tatsuya Iwasaki
IPC分类号： H01L21/44
CPC分类号： B81C1/00031 , B81B1/002 , B81B2201/0214 , H01L43/12 , Y10S977/781 , Y10S977/893
摘要： A minute structure is provided in which electroconductive paths are only formed in nanoholes, and a material is filled in the nanoholes, which are disposed in a specific area, by using the electroconductive paths. The minute structure comprising pores comprises a) a substrate, b) a plurality of electroconductive layers formed on a surface of the substrate, c) a layer primarily composed of aluminum oxide covering the plurality of electroconductive layers and a surface of the substrate where no electroconductive layer is formed, and d) a plurality of pores formed in the layer primarily composed of aluminum oxide, in which the pores are disposed above the electroconductive layers and the surface of the substrate where no electroconductive layers is formed, with a part of the layer primarily composed of aluminum oxide provided under the bottoms of the pores, and in which the layer primarily composed of aluminum oxide provided between the electroconductive layer and the bottoms of the pores disposed above the electroconductive layer comprises a material forming the electroconductive layer.
摘要翻译：提供了一种微结构，其中导电路径仅形成在纳米孔中，并且通过使用导电路径将材料填充在设置在特定区域中的纳米孔中。包括孔的微小结构包括a）基底，b）形成在基底表面上的多个导电层，c）主要由覆盖多个导电层的氧化铝组成的层和不具有导电性的基底的表面层，以及d）主要由氧化铝构成的层中形成的多个孔，其中孔设置在导电层上方和不形成导电层的基板的表面上，其中一部分层主要由设置在孔底部的氧化铝组成，其中主要由设置在导电层和设置在导电层上方的孔的底部之间的氧化铝组成的层包括形成导电层的材料。

7. 发明授权

US07192510B2 Fluid control device and method of manufacturing the same 失效
标题翻译：流体控制装置及其制造方法
公开(公告)号：US07192510B2
公开(公告)日：2007-03-20
申请号：US10735000
申请日：2003-12-11
申请人： Tohru Den , Kazuhiko Fukutani
发明人： Tohru Den , Kazuhiko Fukutani
IPC分类号： C25D11/04 , C25D11/12 , C25D11/18 , C23C18/00 , B01D67/00 , B01D71/02
CPC分类号： B01D67/0065 , B01D71/025 , B01D71/027 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/249979
摘要： A fluid control device has very fine pores with an average diameter not greater than 10 nm and provides a large flux. The fluid control device comprises an anodized alumina film having fine pores and a silicon based micro-porous film having very fine pores and made from an AlSi mixed film and the fine pores and the very fine pores are at least partly linked with each other. The fluid control device is prepared from a film including at least an aluminum layer and an AlSi mixed film by forming an anodized alumina film having fine pores by way of an anodization process for the aluminum layer part and also forming a silicon based micro-porous film having very fine pores containing silicon as principal ingredient by way of an anodization process or etching process for the AlSi mixed film. The fluid control device can be used as filter or ultrafilter film that allows fluid and gas to pass through it.
摘要翻译：流体控制装置具有非常细的孔，平均直径不大于10nm，并提供大的通量。流体控制装置包括具有细孔的阳极氧化氧化铝膜和具有非常细小孔并由AlSi混合膜制成的硅基微孔膜，并且细孔和极细孔至少部分地彼此连接。流体控制装置由至少包含铝层和AlSi混合膜的膜通过用于铝层部分的阳极氧化处理形成具有细孔的阳极化氧化铝膜并且还形成硅基微孔膜通过阳极氧化处理或AlSi混合膜的蚀刻工艺，具有含有硅作为主要成分的非常细的孔。流体控制装置可用作允许流体和气体通过的过滤器或超滤膜。

8. 发明授权

US07183127B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07183127B2
公开(公告)日：2007-02-27
申请号：US10735062
申请日：2003-12-11
申请人： Akira Kuriyama , Hirokatsu Miyata , Albrecht Otto , Miki Ogawa , Hiroshi Okura , Kazuhiko Fukutani , Tohru Den
发明人： Akira Kuriyama , Hirokatsu Miyata , Albrecht Otto , Miki Ogawa , Hiroshi Okura , Kazuhiko Fukutani , Tohru Den
IPC分类号： H01L21/00
CPC分类号： H01L33/08 , B82Y20/00 , G02B6/1225 , H01L27/146 , H01L27/148 , H01L27/153 , H01L31/035281 , H01L31/103 , H01L31/105 , H01L33/18 , Y02E10/50
摘要： A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a matrix member formed so as to contain silicon or germanium and the cylinder-shaped regions containing aluminum and dispersed in the matrix member, semiconductor regions formed in the pores, each having at least a p-n or p-i-n junction, and a pair or electrodes, arranged respectively on the top and at the bottom of the semiconductor regions. The semiconductor regions and the pair of electrodes form a plurality of semiconductor devices on a substrate.
摘要翻译：通过简单的方法制备包括高密度排列的纳米尺寸半导体器件的半导体器件阵列。该阵列包括多孔体，该多孔体具有通过从包括形成为包含硅或锗的矩阵构件和包含铝并分散在基体构件中的圆柱形区域的结构中去除圆柱形区域而形成的圆柱形孔，半导体形成在孔中的各自具有至少pn或pin结的孔，以及分别布置在半导体区域的顶部和底部的一对或多个电极。半导体区域和一对电极在基板上形成多个半导体器件。

9. 发明申请

US20060172116A1 Structure having holes and method for producing the same 失效
标题翻译：具有孔的结构及其制造方法
公开(公告)号：US20060172116A1
公开(公告)日：2006-08-03
申请号：US11235131
申请日：2005-09-27
申请人： Tohru Den , Kazuhiko Fukutani , Nobuhiro Yasui
发明人： Tohru Den , Kazuhiko Fukutani , Nobuhiro Yasui
IPC分类号： B32B3/10
CPC分类号： C23C14/5873 , C22C30/00 , C23C14/185 , C25D11/045 , C25D11/18 , C25D11/20 , Y10S977/781 , Y10S977/811 , Y10S977/814 , Y10T428/218 , Y10T428/24273 , Y10T428/24322 , Y10T428/24331 , Y10T428/28
摘要： A structure having a hole, including a substrate, a first layer including an alumina hole, and a second layer disposed between the substrate and the fist layer, wherein the second layer contains silicon, and has a smaller hole than the alumina hole.
摘要翻译：具有孔的结构，包括基板，包括氧化铝孔的第一层和设置在基板和第一层之间的第二层，其中第二层包含硅，并且具有比氧化铝孔小的孔。

10. 发明授权

US07081303B2 Function device and method for manufacturing the same, perpendicular magnetic recording medium, magnetic recording/reproduction apparatus and information processing apparatus 失效
标题翻译：功能装置及其制造方法，垂直磁记录介质，磁记录/再现装置和信息处理装置
公开(公告)号：US07081303B2
公开(公告)日：2006-07-25
申请号：US10656242
申请日：2003-09-08
申请人： Nobuhiro Yasui , Tohru Den , Kazuhiko Fukutani
发明人： Nobuhiro Yasui , Tohru Den , Kazuhiko Fukutani
IPC分类号： B32B9/04
CPC分类号： C23C14/5873 , B01D67/0058 , B01D67/0072 , B01D71/024 , B01D71/027 , B01D2325/02 , B01D2325/26 , B01D2325/46 , C04B38/0025 , C23C8/02 , C23C14/06 , C23C14/185 , C23C28/02 , C23C28/023 , G02B5/207 , G11B5/855 , Y10T428/12681
摘要： With regard to a function device formed by filling a porous structure with a functional material and a method for manufacturing the functional device, a technique for realizing a structure on a nanometer scale is not fully established. However, a method for manufacturing a function device characterized by including a step of providing a structure including columnar members and an area surrounding the columnar members, a step of removing the columnar members from the structure to form a porous body and a step of filling the porous body with a functional material allows various types of function device to be provided.
摘要翻译：关于通过用功能材料填充多孔结构而形成的功能器件和用于制造功能器件的方法，用于实现纳米级结构的技术尚未完全建立。然而，一种用于制造功能装置的方法，其特征在于包括提供包括柱状构件和围绕柱状构件的区域的结构的步骤，从结构中去除柱状构件以形成多孔体的步骤，以及填充具有功能材料的多孔体允许提供各种类型的功能装置。

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