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    • 5. 发明申请
    • REDOX CAPACITOR AND MANUFACTURING METHOD THEREOF
    • REDOX电容器及其制造方法
    • US20110073991A1
    • 2011-03-31
    • US12891461
    • 2010-09-27
    • Kazutaka KurikiKiyofumi OginoYumiko SaitoJunichiro Sakata
    • Kazutaka KurikiKiyofumi OginoYumiko SaitoJunichiro Sakata
    • H01L27/08H01L21/02
    • H01G11/02H01G9/038H01G9/22H01G11/28H01G11/56H01G11/68H01G11/70H01G11/84H01L21/02565H01L21/02631H01L28/40Y02E60/13
    • To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO3(ZnO)m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.
    • 提供可在室温下使用的氧化还原电容器及其制造方法。 包括氢的非晶半导体被用作氧化还原电容器的电解质。 作为包括氢的非晶半导体的典型实例,可以使用包括诸如非晶硅,非晶硅锗或无定形锗的半导体元件的非晶半导体。 作为包括氢的非晶半导体的另一例子,可以使用包括氢的氧化物半导体。 作为包括氢的氧化物半导体的典型实例,可以给出包括氧化锌,氧化钛,氧化镍,氧化钒和氧化铟等单组分氧化物半导体的非晶半导体。 作为包含氢的氧化物半导体的另一个实例,可以使用诸如InMO 3(ZnO)m(m> 0和M是选自Ga,Fe,Ni,Mn和Co中的一种或多种金属元素)的多组分氧化物半导体 。