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1. 发明申请

US20080170899A1 SIGNAL OUTPUT APPARATUS, IMAGE FORMING APPARATUS AND INFORMATION OUTPUT APPARATUS 失效
标题翻译：信号输出装置，图像形成装置和信息输出装置
公开(公告)号：US20080170899A1
公开(公告)日：2008-07-17
申请号：US12049778
申请日：2008-03-17
申请人： Hidetoshi Nojiri , Masatake Akaike , Norio Kaneko , Takehiko Kawasaki , Koichiro Nakanishi , Naoyo Gemma , Toshitsugu Morimoto
发明人： Hidetoshi Nojiri , Masatake Akaike , Norio Kaneko , Takehiko Kawasaki , Koichiro Nakanishi , Naoyo Gemma , Toshitsugu Morimoto
IPC分类号： B41J11/20
CPC分类号： B41J11/009 , G01N29/045 , G01N29/4427 , G01N2291/012 , G01N2291/014 , G01N2291/0237 , G01N2291/2632 , G01S7/60
摘要： A signal output apparatus comprises an impact applying unit applying an impact to a sheet from the outside thereof, and a detection unit outputting a signal by the impact. An apparatus for determining the type of sheet comprises an impact applying unit applying an impact to a sheet from the outside thereof, and a detection unit outputting a signal by the impact, wherein the type of the sheet is determined based on the signal from the detection unit. An image forming apparatus comprises an impact applying unit applying an impact to a sheet from the outside thereof, and a detection unit outputting a signal by the impact. A method for determining the type of sheet comprises the steps of applying an impact to a sheet from the outside thereof, outputting a signal from a detection unit by the applying step, and determining the type of sheet based on the signal. An apparatus carries out the method for determining the type of sheet. An information output apparatus used in an image forming apparatus comprises an impact applying unit applying an impact to a target from the outside thereof, and a detection unit outputting information by the impact.
摘要翻译：信号输出装置包括从外部向片材施加冲击的冲击施加单元，以及通过冲击输出信号的检测单元。用于确定片材类型的装置包括冲击施加单元，其从外部向片材施加冲击;以及检测单元，通过冲击输出信号，其中根据来自检测器的信号确定片材的类型单元。图像形成装置包括从外部向片材施加冲击的冲击施加单元和由冲击输出信号的检测单元。用于确定片材类型的方法包括以下步骤：从外部对片材施加冲击，通过施加步骤从检测单元输出信号，以及基于该信号确定片材的类型。一种装置执行用于确定片材类型的方法。在图像形成装置中使用的信息输出装置包括从外部对目标施加冲击的冲击施加单元和通过冲击输出信息的检测单元。

2. 发明授权

US5613020A Optical devices having a periodical current restraint layer and optical communication systems using the optical device 失效
标题翻译：具有周期性电流限制层的光学器件和使用光学器件的光通信系统
公开(公告)号：US5613020A
公开(公告)日：1997-03-18
申请号：US571741
申请日：1995-12-13
申请人： Mamoru Uchida , Hidetoshi Nojiri
发明人： Mamoru Uchida , Hidetoshi Nojiri
IPC分类号： G02B6/12 , G02F1/313 , H01S5/026 , H01S5/042 , H01S5/10 , H01S5/18 , H01S5/40 , H01S5/50 , G02B6/34
CPC分类号： G02F1/3133 , G02B6/12004 , H01S5/1032 , G02B2006/1215 , G02F2001/3135 , G02F2201/302 , H01S5/026 , H01S5/0262 , H01S5/0425 , H01S5/1035 , H01S5/18 , H01S5/4056 , H01S5/50
摘要： An optical device for performing a light power transfer between two waveguides that includes a first waveguide, a second waveguide, a transfer rate control element for controlling a light power transfer rate between the first and second waveguides and an electric element for electrically controlling the transfer rate control element by imparting electric energy to the transfer rate control element. The transfer rate control element sets the light power transfer rate to zero when the transfer rate control element is in an inoperative state. The transfer rate control element falls into the inoperative state when the electric element imparts no electric energy to the transfer rate control element.
摘要翻译：一种用于在包括第一波导，第二波导，用于控制第一和第二波导之间的光功率传送速率的传输速率控制元件的两个波导之间执行光功率传输的光学装置和用于电控制传送速率的电元件控制元件通过向传送速率控制元件施加电能。当传送速率控制元件处于非操作状态时，传送速率控制元件将光功率传送速率设置为零。当电气元件不向传送速率控制元件施加电能时，传送速率控制元件进入不工作状态。

3. 发明授权

US5298739A Photodetector capable of sweeping out unwanted carriers and an optical communication system including the same 失效
标题翻译：能够扫除不想要的载体的光检测器和包括其的光通信系统
公开(公告)号：US5298739A
公开(公告)日：1994-03-29
申请号：US886922
申请日：1992-05-22
申请人： Tamayo Hiroki , Hidetoshi Nojiri
发明人： Tamayo Hiroki , Hidetoshi Nojiri
IPC分类号： H01L31/10 , G02B6/12 , G02B6/42 , H01L31/108 , H01L31/112 , H01J40/14 , H01L27/14
CPC分类号： G02B6/4206 , G02B6/12004 , H01L31/1085 , H01L31/1123 , G02B2006/12126
摘要： A light absorbing layer is formed in a photodetector that receives and detects light guided therein. Carriers are generated in the light absorbing layer in response to the guided light. Unwanted carriers likely to be generated in regions other than the light absorbing layer when light is guided into the photodetector are swept out by a carrier sweeping arrangement to improve the time response and light-current characteristics of the photodetector.
摘要翻译：在接收和检测其中引导的光的光电检测器中形成光吸收层。响应于导光，在光吸收层中产生载体。当光被引导到光电检测器中时，可能在除了光吸收层之外的区域中产生的不希望的载体被载体扫描装置扫除，以改善光电检测器的时间响应和光电流特性。

4. 发明授权

US5173149A Method of etching semiconductor substrate 失效
标题翻译：蚀刻半导体衬底的方法
公开(公告)号：US5173149A
公开(公告)日：1992-12-22
申请号：US665546
申请日：1991-03-07
申请人： Hidetoshi Nojiri , Makoto Uchiyama
发明人： Hidetoshi Nojiri , Makoto Uchiyama
IPC分类号： H01L21/306 , H01L21/3063
CPC分类号： H01L21/3063
摘要： To eliminate the influence of fluctuations in etching liquid sorts, composition, density, degradation, temperature, agitation etc., a method of selectively etching a semiconductor substrate having an n-type layer and a p-type layer and immersed in an electrolytic solution comprises the steps of: applying an etching voltage to the n-type layer; integrating etching current flowing through the substrate; if the integrated current value exceeds a reference value required to etch the p-type layer to a predetermined depth, increasing the etching voltage; if the potential of the substrate relative to a reference electrode reaches a predetermined value at which only the p-type layer can be etched, keeping the increased etching voltage at the current level to further etch only the p-type layer; and if the etching current drops sharply due to formation of an anodic oxidation film on the n-type layer, completing the substrate etching.
摘要翻译：为了消除蚀刻液体种类，组成，密度，降解，温度，搅拌等的波动的影响，选择性地蚀刻具有n型层和p型层并浸没在电解液中的半导体衬底的方法包括步骤：向n型层施加蚀刻电压; 积分流过衬底的蚀刻电流; 如果积分电流值超过将p型层蚀刻到预定深度所需的参考值，则增加蚀刻电压; 如果衬底相对于参考电极的电位达到只能蚀刻p型层的预定值，则将增加的蚀刻电压保持在当前电平以仅进一步蚀刻p型层; 并且如果蚀刻电流由于在n型层上形成阳极氧化膜而急剧下降，则完成基板蚀刻。

5. 发明授权

US5140149A Optical apparatus using wavelength selective photocoupler 失效
标题翻译：使用波长选择光电耦合器的光学设备
公开(公告)号：US5140149A
公开(公告)日：1992-08-18
申请号：US796929
申请日：1991-11-22
申请人： Hajime Sakata , Hidetoshi Nojiri
发明人： Hajime Sakata , Hidetoshi Nojiri
IPC分类号： G02B6/124 , G02B6/34 , G02B6/42 , H01L27/15 , H01S3/00 , H01S5/026 , H01S5/042 , H01S5/10 , H01S5/50
CPC分类号： H01S5/5045 , G02B6/124 , G02B6/42 , H01L27/15 , H01S3/0064 , H01S5/1032 , G02B6/29323 , H01S5/0264 , H01S5/0425 , H01S5/1035
摘要： The present invention relates to optical apparatus such as a photosensor, a semiconductor laser, an optical amplifier in which a wavelength selective photocoupler is used so as to couple two waveguides through a diffraction grating.A photosensor which is one of the optical apparatus according to the present invention comprises a substrate, a first waveguide layer formed on the substrate, a second waveguide layer formed on the first waveguide layer to be stacked in a direction of thickness and which has a guided mode difference from that of the first waveguide layer, a diffraction grating formed on an overlapping region of the guided modes of the first and second waveguide layers and which couples light components of a specific wavelength range of light propagating through the first waveguide layer to the second waveguide layer, a light absorption layer for absorbing at least some light components of the light components coupled to the second waveguide layer, and an electrode for converting the light components absorbed by the light absorption layer into an electrical signal and outputting the electrical signal.
摘要翻译：本发明涉及光传感器，半导体激光器，光放大器等光学装置，其中使用波长选择性光电耦合器，以便通过衍射光栅耦合两个波导。作为本发明的光学装置之一的光电传感器包括基板，形成在基板上的第一波导层，形成在第一波导层上的第二波导层，以沿厚度方向堆叠并且具有引导与第一波导层的模式差异，形成在第一和第二波导层的引导模式的重叠区域上并且将通过第一波导层传播的特定波长范围的光分量耦合到第二波导层的第二波导层，用于吸收耦合到第二波导层的光分量的至少一些光分量的光吸收层，以及用于将由光吸收层吸收的光分量转换成电信号并输出电信号的电极。

6. 发明授权

US4971415A Multibeam emitting device 失效
标题翻译：多波束发射装置
公开(公告)号：US4971415A
公开(公告)日：1990-11-20
申请号：US312311
申请日：1989-02-17
申请人： Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Isao Hakamada
发明人： Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Isao Hakamada
IPC分类号： H01L27/15 , H01L33/20 , H01S5/026 , H01S5/062 , H01S5/125 , H01S5/40 , H04N1/036
CPC分类号： H04N1/036 , H01L27/153 , H01S5/026 , H01S5/125 , H01S5/4031 , H01L33/20 , H01S5/06243 , H01S5/4056
摘要： In a multibeam emitting device provided with a plurality of semiconductive light-emitting elements monolithically formed on a semiconductor substrate, the semiconductor light-emitting elements are formed so that the directions of emission of the lights emitted from the elements differ from one another.
摘要翻译：在设置有多个半导体发光元件的单片半导体发光元件的多光束发射器件中，半导体发光元件被形成为使得从元件发射的光的发射方向彼此不同。

7. 发明授权

US4962062A Method of tightly joining two semiconductor substrates 失效
标题翻译：紧密接合两个半导体衬底的方法
公开(公告)号：US4962062A
公开(公告)日：1990-10-09
申请号：US238421
申请日：1988-08-31
申请人： Makoto Uchiyama , Hidetoshi Nojiri
发明人： Makoto Uchiyama , Hidetoshi Nojiri
IPC分类号： H01L21/02 , H01L21/18
CPC分类号： H01L21/187 , Y10S148/012 , Y10S148/135
摘要： Two semiconductor substrates, each having a polished surface and at least one groove is formed in the surface of at least one of the two substrates, are tightly and inseparably joined by the steps of wetting the polished surface of at least one of the two substrates with a liquid not containing any solute that causes precipitation of a solid substance upon evaporation of the liquid, e.g. methanol or water, placing one substrate on the other so as to bring the polished surfaces of the two substrates into contact with each other with intervention of a thin film of the liquid therebetween and, after a while, subjecting the provisionally joined substrates to a heat treatment and then forming a dielectric layer of organic polymer or silicon compound in at least one groove. This method is suitable for joining silicon substrates such as silicon wafers now on the market. The two semiconductor substrates may be different in the type of conductivity or in the concentration of impurity, and at least one of the two substrates may have a diffused layer, a dielectric layer of a polycrystalline layer as a surface layer having the polished surface.
摘要翻译：在两个基板中的至少一个基板的表面上形成两个具有抛光表面和至少一个凹槽的半导体基板，通过以下步骤紧密地和不可分离地连接，所述步骤是通过以下步骤将两个基板中的至少一个的抛光表面润湿，不含任何溶质的液体，其在液体蒸发时引起固体物质的沉淀，例如，甲醇或水，将一个基板放置在另一个上，以使两个基板的抛光表面彼此接触，同时介入其间的液体薄膜，并且在一段时间之后，使临时接合的基板经受热处理，然后在至少一个凹槽中形成有机聚合物或硅化合物的介电层。该方法适用于现在市场上连接诸如硅晶片的硅衬底。两个半导体衬底的导电类型或杂质浓度可以不同，并且两个衬底中的至少一个可以具有扩散层，作为具有抛光表面的表面层的多晶层的电介质层。

8. 发明授权

US4799229A Semiconductor laser array 失效
标题翻译：半导体激光阵列
公开(公告)号：US4799229A
公开(公告)日：1989-01-17
申请号：US49165
申请日：1987-05-13
申请人： Seiichi Miyazawa , Toshitami Hara , Hidetoshi Nojiri , Yoshinobu Sekiguchi , Mitsutoshi Hasegawa , Sotomitsu Ikeda
发明人： Seiichi Miyazawa , Toshitami Hara , Hidetoshi Nojiri , Yoshinobu Sekiguchi , Mitsutoshi Hasegawa , Sotomitsu Ikeda
IPC分类号： G11B7/125 , G11B7/14 , H01S5/10 , H01S5/40 , H01S3/19
CPC分类号： G11B7/127 , H01S5/10 , H01S5/4031 , G11B7/14 , H01S5/4056
摘要： A semiconductor laser array includes plural semiconductor laser elements each emitting light from two end faces constituting resonant planes and monolithically formed on a semiconductor substrate, in which the mutual angle of the beams emerging from one end of semiconductor lasers is different from that from the other end and in which the beam angle is selected as a non-zero finite value at least one end.
摘要翻译：半导体激光器阵列包括多个半导体激光元件，每个半导体激光元件从构成谐振平面的两个端面发射光并且单片地形成在半导体衬底上，其中从半导体激光器的一端出射的光束的相互角度与另一端的相互角度不同并且其中束角被选择为至少一端的非零有限值。

9. 发明授权

US4706254A Semiconductor device and its fabrication 失效
标题翻译：半导体器件及其制造
公开(公告)号：US4706254A
公开(公告)日：1987-11-10
申请号：US608510
申请日：1984-05-09
申请人： Hidetoshi Nojiri , Seiichi Miyazawa , Isao Hakamada , Yoshioki Hajimoto
发明人： Hidetoshi Nojiri , Seiichi Miyazawa , Isao Hakamada , Yoshioki Hajimoto
IPC分类号： H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/227 , H01S5/2205 , H01S5/2209 , H01S5/222 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/2272 , H01S5/2275 , H01S5/32308
摘要： A semiconductor device is constructed with a monocrystalline semiconductor layer laminated in a strip-pattern on a substrate, and amorphous or polycrystalline semiconductor layer formed on the substrate in a manner to encompass the monocrystalline semiconductor layers. The monocrystalline semiconductor layer comprises a plurality of layers including a laser active layer.
摘要翻译：半导体器件由在衬底上以条状图案层叠的单晶半导体层和以包围单晶半导体层的方式形成在衬底上的非晶或多晶半导体层构成。单晶半导体层包括包括激光活性层的多个层。

10. 发明授权

US06666943B2 Film transfer method 有权
公开(公告)号：US06666943B2
公开(公告)日：2003-12-23
申请号：US09998227
申请日：2001-12-03
申请人： Takatsugu Wada , Hidetoshi Nojiri , Masatake Akaike , Takehiko Kawasaki , Rei Kurashima , Satoshi Nozu , Kozo Hokayama
发明人： Takatsugu Wada , Hidetoshi Nojiri , Masatake Akaike , Takehiko Kawasaki , Rei Kurashima , Satoshi Nozu , Kozo Hokayama
IPC分类号： B44C1165
CPC分类号： H01L41/316 , B41J2/161 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1646 , H01L41/0926 , H01L41/1876 , H01L41/253 , H01L41/313 , Y10S117/915 , Y10S428/914 , Y10T428/2486 , Y10T428/24917
摘要： A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a second substrate having layers. The method of transferring the film comprises a first step of forming a lift-off layer and the film to be transferred on the first substrate, a second step of bonding the film to be transferred to the second substrate and a third step of separating the film to be transferred from the first substrate by etching the lift-off layer and transferring it onto the second substrate.

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