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1. 发明申请

US20120274917A1 IMAGING OPTICS 审中-公开
标题翻译：成像光学
公开(公告)号：US20120274917A1
公开(公告)日：2012-11-01
申请号：US13482794
申请日：2012-05-29
申请人： Hans-Juergen Mann , Martin Endres , David Shafer , Berndt Warm , Alois Herkommer
发明人： Hans-Juergen Mann , Martin Endres , David Shafer , Berndt Warm , Alois Herkommer
IPC分类号： G03B27/70 , G03B27/32 , G02B17/06
CPC分类号： G03F7/70233 , G02B17/0652 , G03F7/702 , G03F7/70275
摘要： An imaging optics is provided for lithographic projection exposure for guiding a bundle of imaging light with a wavelength shorter than 193 nm via a plurality of mirrors for beam-splitter-free imaging of a reflective object in an object field in an object plane into an image field in an image plane. An object field point has a central ray angle which is smaller than 3°. At least one of the mirrors is a near-field mirror. The imaging optics which can allow for high-quality imaging of a reflective object.
摘要翻译：提供了一种用于光刻投影曝光的成像光学装置，用于通过多个反射镜引导波长短于193nm的成像光束，用于在物体平面中的物体场中的反射物体成像成图像场中的图像平面。物体场点具有小于3°的中心射线角度。至少一个镜子是近场镜。成像光学元件可以允许反射物体的高质量成像。

2. 发明授权

US08587767B2 Illumination optics for EUV microlithography and related system and apparatus 有权
标题翻译：用于EUV微光刻的照明光学器件及相关系统和装置
公开(公告)号：US08587767B2
公开(公告)日：2013-11-19
申请号：US12915785
申请日：2010-10-29
申请人： Damian Fiolka , Berndt Warm , Christian Steigerwald , Martin Endres , Ralf Stuetzle , Jens Ossmann , Ralf Scharnweber , Markus Hauf , Udo Dinger , Severin Waldis , Marc Kirch , Joachim Hartjes
发明人： Damian Fiolka , Berndt Warm , Christian Steigerwald , Martin Endres , Ralf Stuetzle , Jens Ossmann , Ralf Scharnweber , Markus Hauf , Udo Dinger , Severin Waldis , Marc Kirch , Joachim Hartjes
IPC分类号： G03B27/72 , G03B27/54 , G03B27/68 , G03B27/42 , G03B27/32
CPC分类号： G03F7/70191 , G03F7/70083
摘要： Illumination optics for EUV microlithography guide an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1.
摘要翻译：用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场，其具有较长场尺寸和较短场尺寸之间的延伸比，其中该比率显着大于1。

3. 发明申请

US20110063598A1 ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS 有权
标题翻译： EUV微观照相和相关系统和装置的照明光学
公开(公告)号：US20110063598A1
公开(公告)日：2011-03-17
申请号：US12915785
申请日：2010-10-29
申请人： Damian Fiolka , Berndt Warm , Christian Steigerwald , Martin Endres , Ralf Stuetzle , Jens Ossmann , Ralf Scharnweber , Markus Hauf , Udo Dinger , Severin Waldis , Marc Kirch , Joachim Hartjes
发明人： Damian Fiolka , Berndt Warm , Christian Steigerwald , Martin Endres , Ralf Stuetzle , Jens Ossmann , Ralf Scharnweber , Markus Hauf , Udo Dinger , Severin Waldis , Marc Kirch , Joachim Hartjes
IPC分类号： G03B27/72
CPC分类号： G03F7/70191 , G03F7/70083
摘要： An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
摘要翻译：用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场，其具有在较大场尺寸和较短场尺寸之间的延伸比，其中该比率远大于1.场分面镜具有多个的场面在场景中设置定义的照明条件。在场面反射镜下游的以下光学器件将照明光透射到物体场中。以下光学器件包括具有多个光瞳面的光瞳小面镜。场分面在每种情况下分别被分配给光瞳面，使得在各种情况下照射的照明光束的一部分通过相关联的光瞳小面被引导到物场。场面镜不仅包括多个基本照明场面，它们通过相关联的基本照明光瞳面提供物场的基本照明，而且还包括多个校正照明场面，其提供对照射的照明的校正通过相关联的校正照明光瞳面进行物体场。结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化，例如照明强度分布或照明角度分布。

4. 发明申请

US20110235015A1 ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY 审中-公开
标题翻译： EUV微观光谱的照明光学
公开(公告)号：US20110235015A1
公开(公告)日：2011-09-29
申请号：US13076730
申请日：2011-03-31
申请人： Guenther Dengel , Gero Wittich , Udo Dinger , Ralf Stuetzle , Martin Endres , Jens Ossmann , Berndt Warm
发明人： Guenther Dengel , Gero Wittich , Udo Dinger , Ralf Stuetzle , Martin Endres , Jens Ossmann , Berndt Warm
IPC分类号： G03B27/72
CPC分类号： G03F7/7085 , G03F7/70141 , G03F7/702 , G03F7/70558
摘要： An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.
摘要翻译：用于EUV微光刻的照明光学器件借助EUV使用的辐射束照亮物体场。预设设备预设照明参数。照明校正装置校正物场照明的强度分布和/或角分布。后者具有光学部件，使用的辐射束至少部分地施加在物场的上游，并且可以以受控的方式驱动。检测器获取照明参数之一。评估装置评估检测器数据并将其转换成控制信号。至少一个致动器移动光学部件。在曝光期间，在投影曝光期间借助于检测器信号来控制致动器。确保物体边缘朝向待曝光物体的8μm以下的最大位移。结果是一个照明光学器件，用于确保符合预设的照明参数，即使在最严格的精度要求下。

5. 发明授权

US09182578B2 Imaging optical system and illumination optical system 有权
标题翻译：成像光学系统和照明光学系统
公开(公告)号：US09182578B2
公开(公告)日：2015-11-10
申请号：US13326516
申请日：2011-12-15
申请人： Hans-Juergen Mann , Johannes Zellner , Aurelian Dodoc , Marco Pretorius , Christoph Menke , Wilhelm Ulrich , Martin Endres
发明人： Hans-Juergen Mann , Johannes Zellner , Aurelian Dodoc , Marco Pretorius , Christoph Menke , Wilhelm Ulrich , Martin Endres
IPC分类号： G03B27/42 , G02B17/06 , G02B27/09 , G03F7/20
CPC分类号： G02B17/0663 , G02B27/0905 , G03F7/70233
摘要： An imaging optical system has a plurality of mirrors, which image an object field in an object plane into an image field in an image plane. A reflection face of at least one of the mirrors is configured as a free form face which cannot be described by a rotationally symmetrical function. The object field has an aspect ratio greater than 1. A ratio of a minimal and a maximal transverse dimension of the object field can be less than 0.9.
摘要翻译：成像光学系统具有多个反射镜，其将物平面中的对象场成像到图像平面中的图像场。至少一个反射镜的反射面构成为不能用旋转对称的功能描述的自由表面。物体场的纵横比大于1.物体场的最小和最大横向尺寸的比可以小于0.9。

6. 发明授权

US08629972B2 Projection objective for microlithography 有权
标题翻译：微光刻的投影目标
公开(公告)号：US08629972B2
公开(公告)日：2014-01-14
申请号：US12884670
申请日：2010-09-17
申请人： Johannes Zellner , Hans-Juergen Mann , Martin Endres
发明人： Johannes Zellner , Hans-Juergen Mann , Martin Endres
IPC分类号： G02B5/10 , G03B27/32 , G03B27/42 , G03B27/54
CPC分类号： G03F7/70316 , G02B17/0663 , G03F7/702 , G03F7/70233
摘要： A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.
摘要翻译：用于微光刻的投影物镜用于将物平面中的物体场成像到图像平面中的图像场中。投影物镜包括至少六个反射镜，其中至少一个反射镜具有自由形反射表面。投影物镜的总长（T）与物体像偏移（dOIS）之间的比例可以小于12.像平面是物平面下游的投影物镜的第一场平面。投影物镜可以具有多个反射镜，其中总长度（T）和物体图像偏移（dOIS）之间的比率小于2。

7. 发明申请

US20120147347A1 IMAGING OPTICAL SYSTEM AND ILLUMINATION OPTICAL SYSTEM 有权
标题翻译：成像光学系统和照明光学系统
公开(公告)号：US20120147347A1
公开(公告)日：2012-06-14
申请号：US13326516
申请日：2011-12-15
申请人： Hans-Juergen Mann , Johannes Zellner , Aurelian Dodoc , Marco Pretorius , Christoph Menke , Wilhelm Ulrich , Martin Endres
发明人： Hans-Juergen Mann , Johannes Zellner , Aurelian Dodoc , Marco Pretorius , Christoph Menke , Wilhelm Ulrich , Martin Endres
IPC分类号： G03B27/54 , G02B17/06 , B01J19/12 , B82Y20/00
CPC分类号： G02B17/0663 , G02B27/0905 , G03F7/70233
摘要： An imaging optical system has a plurality of mirrors, which image an object field in an object plane into an image field in an image plane. A reflection face of at least one of the mirrors is configured as a free form face which cannot be described by a rotationally symmetrical function. The object field has an aspect ratio greater than 1. A ratio of a minimal and a maximal transverse dimension of the object field can be less than 0.9.
摘要翻译：成像光学系统具有多个反射镜，其将物平面中的对象场成像到图像平面中的图像场。至少一个反射镜的反射面构成为不能用旋转对称的功能描述的自由表面。物体场的纵横比大于1.物体场的最小和最大横向尺寸的比可以小于0.9。

8. 发明申请

US20110026003A1 PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY 有权
标题翻译：投影目标的微观算法
公开(公告)号：US20110026003A1
公开(公告)日：2011-02-03
申请号：US12884670
申请日：2010-09-17
申请人： Johannes Zellner , Hans-Juergen Mann , Martin Endres
发明人： Johannes Zellner , Hans-Juergen Mann , Martin Endres
IPC分类号： G03B27/72
CPC分类号： G03F7/70316 , G02B17/0663 , G03F7/702 , G03F7/70233
摘要： A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.
摘要翻译：用于微光刻的投影物镜用于将物平面中的物体场成像到图像平面中的图像场中。投影物镜包括至少六个反射镜，其中至少一个反射镜具有自由形反射表面。投影物镜的总长（T）与物体像偏移（dOIS）之间的比例可以小于12.像平面是物平面下游的投影物镜的第一场平面。投影物镜可以具有多个反射镜，其中总长度（T）和物体图像偏移（dOIS）之间的比率小于2。

9. 发明授权

US09304400B2 Illumination system for EUV microlithography 有权
标题翻译： EUV微光刻照明系统
公开(公告)号：US09304400B2
公开(公告)日：2016-04-05
申请号：US13038453
申请日：2011-03-02
申请人： Michael Layh , Ralf Stuetzle , Damian Fiolka , Martin Endres , Holger Weigand
发明人： Michael Layh , Ralf Stuetzle , Damian Fiolka , Martin Endres , Holger Weigand
IPC分类号： G03B27/54 , G03F7/20 , G02B17/06 , G02B27/00
CPC分类号： G03F7/70083 , G02B17/0605 , G02B17/0647 , G02B27/0043 , G03F7/70033 , G03F7/70075
摘要： An illumination system for EUV microlithography includes an EUV light source which generates EUV illumination light with an etendue that is higher than 0.01 mm2. The EUV light source generates a sequence of EUV light pulses having a pulse sequence frequency. An illumination optics of the illumination system is used to guide the illumination light from the light source to an object field. At least one optical modulation component of the illumination system is preferably modulatable synchronously with the pulse sequence frequency. The result is an illumination system where a homogeneity of an object field illumination is improved.
摘要翻译：用于EUV微光刻的照明系统包括产生具有高于0.01mm 2的光密度的EUV照明光的EUV光源。 EUV光源产生具有脉冲序列频率的EUV光脉冲序列。照明系统的照明光学器件用于将来自光源的照明光引导到物场。照明系统的至少一个光调制部件优选地可以与脉冲序列频率同步地进行调制。其结果是改善了物场照明的均匀性的照明系统。

10. 发明授权

US08717541B2 Field facet mirror for an illumination optics of a projection exposure apparatus for EUV microlithography 有权
标题翻译：用于EUV微光刻的投影曝光装置的照明光学元件的场面反射镜
公开(公告)号：US08717541B2
公开(公告)日：2014-05-06
申请号：US13034275
申请日：2011-02-24
申请人： Adrian Staicu , Martin Endres
发明人： Adrian Staicu , Martin Endres
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/702 , G02B5/0875 , G02B5/0891 , G02B5/09 , G02B19/0023 , G02B19/0047 , G02B19/0095 , G03F7/70075 , G03F7/70083 , G03F7/70108 , Y10T29/49826
摘要： A field facet mirror for an illumination optics of a projection exposure apparatus for EUV microlithography transmits a structure of an object arranged in an object field into an image field. The field facet mirror has a plurality of field facets with reflection surfaces. The arrangement of the field facets next to one another spans a base plane. Projections of the reflection surfaces of at least two of the field facets onto the base plane differ with respect to at least one of the following parameters: size, shape, orientation. A field facet mirror results which can ensure a uniform object field illumination with a simultaneously high EUV throughput.
摘要翻译：用于EUV微光刻的投影曝光装置的照明光学器件的场面反射镜将布置在物场中的物体的结构传输到图像场中。场面反射镜具有多个具有反射面的场面。彼此相邻的场面的排列跨越基面。至少两个场面的反射面在基面上的投影相对于以下参数中的至少一个而不同：尺寸，形状，取向。可以确保具有同时高的EUV吞吐量的均匀物体场照明的场分面镜。

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