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1. 发明申请

US20110063598A1 ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS 有权
标题翻译： EUV微观照相和相关系统和装置的照明光学
公开(公告)号：US20110063598A1
公开(公告)日：2011-03-17
申请号：US12915785
申请日：2010-10-29
申请人： Damian Fiolka , Berndt Warm , Christian Steigerwald , Martin Endres , Ralf Stuetzle , Jens Ossmann , Ralf Scharnweber , Markus Hauf , Udo Dinger , Severin Waldis , Marc Kirch , Joachim Hartjes
发明人： Damian Fiolka , Berndt Warm , Christian Steigerwald , Martin Endres , Ralf Stuetzle , Jens Ossmann , Ralf Scharnweber , Markus Hauf , Udo Dinger , Severin Waldis , Marc Kirch , Joachim Hartjes
IPC分类号： G03B27/72
CPC分类号： G03F7/70191 , G03F7/70083
摘要： An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
摘要翻译：用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场，其具有在较大场尺寸和较短场尺寸之间的延伸比，其中该比率远大于1.场分面镜具有多个的场面在场景中设置定义的照明条件。在场面反射镜下游的以下光学器件将照明光透射到物体场中。以下光学器件包括具有多个光瞳面的光瞳小面镜。场分面在每种情况下分别被分配给光瞳面，使得在各种情况下照射的照明光束的一部分通过相关联的光瞳小面被引导到物场。场面镜不仅包括多个基本照明场面，它们通过相关联的基本照明光瞳面提供物场的基本照明，而且还包括多个校正照明场面，其提供对照射的照明的校正通过相关联的校正照明光瞳面进行物体场。结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化，例如照明强度分布或照明角度分布。

2. 发明授权

US07626770B2 Illumination system with zoom objective 有权
标题翻译：具有缩放目标的照明系统
公开(公告)号：US07626770B2
公开(公告)日：2009-12-01
申请号：US11696956
申请日：2007-04-05
申请人： Wolfgang Singer , Jens Ossmann
发明人： Wolfgang Singer , Jens Ossmann
IPC分类号： G02B27/10 , G03B27/54
CPC分类号： G03F7/70233 , G02B21/06 , G03F7/70075 , G03F7/70108 , G03F7/70183 , G03F7/702
摘要： Illumination systems which are designed to illuminate a field in a field plane and simultaneously illuminate a pupil plane with radiation from a light source are disclosed.
摘要翻译：公开了用于照射场平面中的场并同时用来自光源的辐射照射光瞳平面的照明系统。

3. 发明申请

US20080259303A1 PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY 审中-公开
标题翻译：投影曝光装置用于微结构
公开(公告)号：US20080259303A1
公开(公告)日：2008-10-23
申请号：US12103185
申请日：2008-04-15
申请人： Jens Ossmann , Martin Endres , Ralf Stuetzle
发明人： Jens Ossmann , Martin Endres , Ralf Stuetzle
IPC分类号： G03B27/70 , G03B27/54
CPC分类号： G03F7/70841 , G03F7/702 , G03F7/70808 , G03F7/70833
摘要： A projection exposure apparatus for microlithography is disclosed. The apparatus can include a radiation source to generate illumination radiation and a reticle holder to receive a reticle in an object plane. The apparatus can further include illumination optics to guide the illumination radiation to an object field, which is to be illuminated, in the object plane. The apparatus can also include a wafer holder to receive a wafer in an image plane and projection optics to image the object field into an image field in the image plane. The radiation source and projection optics can be arranged in separate chambers (e.g., one above the other). The chambers can be separated by a wall. There can be an illumination radiation leadthrough in the wall. In some embodiments, the projection exposure apparatus can guide the illumination radiation with low loss.
摘要翻译：公开了一种用于微光刻的投影曝光装置。该装置可以包括用于产生照明辐射的辐射源和用于在物平面中接收光罩的光罩保持器。该装置还可以包括照明光学器件，以将照射辐射引导到物体平面中要被照明的物体场。该装置还可以包括用于在图像平面中接收晶片的晶片保持器和用于将对象场成像到图像平面中的图像场的投影光学器件。辐射源和投影光学器件可以布置在分开的腔室中（例如，彼此之一）。这些室可以被墙隔开。墙壁上可以有一个照明辐射引线。在一些实施例中，投影曝光装置可以低损耗地引导照射辐射。

4. 发明授权

US09310692B2 Component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus 有权
标题翻译：用于在微光刻投影曝光设备的物平面中设置扫描集成照明能量的组件
公开(公告)号：US09310692B2
公开(公告)日：2016-04-12
申请号：US12916882
申请日：2010-11-01
申请人： Ralf Stuetzle , Martin Endres , Jens Ossmann , Michael Layh
发明人： Ralf Stuetzle , Martin Endres , Jens Ossmann , Michael Layh
IPC分类号： G03B27/52 , G03F7/20
CPC分类号： G03F7/70191 , G03F7/70066 , G03F7/70083 , G03F7/70558
摘要： A component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus is disclosed. The component includes a plurality of diaphragms which are arranged alongside one another with respect to a direction perpendicular to the scan movement and which differ in their form and the position of which can be altered approximately in the scan direction so that a portion of the illumination energy can be vignetted by at least one diaphragm. The form of the individual diaphragm is specifically adapted to the form of the illumination in a diaphragm plane in which the component is arranged. This has the effect that at least parts of the delimiting edges of two diaphragms always differ in the case of an arbitrary displacement of the diaphragms.
摘要翻译：公开了一种用于在微光刻投影曝光装置的物平面中设置扫描集成照明能量的部件。该部件包括多个隔膜，它们相对于垂直于扫描移动的方向彼此并排布置，并且其形状不同，其位置可以在扫描方向上大致改变，使得照射能量的一部分可以由至少一个隔膜取消。单个隔膜的形式特别适用于其中布置有该部件的隔膜平面中的照明形式。这具有以下效果：在隔膜的任意位移的情况下，两个隔膜的至少一部分限界边缘总是不同。

5. 发明授权

US08227770B2 EUV illumination system 有权
标题翻译： EUV照明系统
公开(公告)号：US08227770B2
公开(公告)日：2012-07-24
申请号：US12535249
申请日：2009-08-04
申请人： Martin Endres , Jens Ossmann
发明人： Martin Endres , Jens Ossmann
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： G02B17/0892 , G02B17/0804 , G02B17/082 , G02B17/0836 , G03F7/702
摘要： An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion. In a first variant of the illumination system, at least an axis portion between at least two of the reflecting optical elements is inclined relative to the illumination main plane. In a second variant of the illumination system, the optical device, in addition to the second optical element includes precisely three further optical elements, i.e. a third optical element, a fourth optical element and a fifth optical element.
摘要翻译：照明系统用于用EUV辐射照射物体表面的指定照明场。照明系统具有EUV源和收集器以将EUV辐射集中在光轴的方向上。提供第一光学元件以产生二次光源，并且在这些次级光源的位置处提供第二光学元件，第二光学元件是包括另外的光学元件的光学器件的一部分，并且其将第一光学元件元素进入图像平面进入照明场。在收集器和照明场之间，最多设置五个反射光学元件。这些光学元件既可以粗略地或者陡峭地反射主光束。投射到照明主平面上的光轴在源轴部分和场轴部分之间偏转大于30°。在照明系统的第一变型中，至少两个反射光学元件之间的至少一个轴部分相对于照明主平面倾斜。在照明系统的第二变型中，除了第二光学元件之外，光学器件精确地包括三个另外的光学元件，即第三光学元件，第四光学元件和第五光学元件。

6. 发明申请

US20110235015A1 ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY 审中-公开
标题翻译： EUV微观光谱的照明光学
公开(公告)号：US20110235015A1
公开(公告)日：2011-09-29
申请号：US13076730
申请日：2011-03-31
申请人： Guenther Dengel , Gero Wittich , Udo Dinger , Ralf Stuetzle , Martin Endres , Jens Ossmann , Berndt Warm
发明人： Guenther Dengel , Gero Wittich , Udo Dinger , Ralf Stuetzle , Martin Endres , Jens Ossmann , Berndt Warm
IPC分类号： G03B27/72
CPC分类号： G03F7/7085 , G03F7/70141 , G03F7/702 , G03F7/70558
摘要： An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.
摘要翻译：用于EUV微光刻的照明光学器件借助EUV使用的辐射束照亮物体场。预设设备预设照明参数。照明校正装置校正物场照明的强度分布和/或角分布。后者具有光学部件，使用的辐射束至少部分地施加在物场的上游，并且可以以受控的方式驱动。检测器获取照明参数之一。评估装置评估检测器数据并将其转换成控制信号。至少一个致动器移动光学部件。在曝光期间，在投影曝光期间借助于检测器信号来控制致动器。确保物体边缘朝向待曝光物体的8μm以下的最大位移。结果是一个照明光学器件，用于确保符合预设的照明参数，即使在最严格的精度要求下。

7. 发明申请

US20080278704A1 ILLUMINATION SYSTEM FOR A PROJECTION EXPOSURE APPARATUS WITH WAVELENGTHS LESS THAN OR EQUAL TO 193 nm 审中-公开
标题翻译：投影曝光装置的照度系统，波长小于或等于193 nm
公开(公告)号：US20080278704A1
公开(公告)日：2008-11-13
申请号：US11828512
申请日：2007-07-26
申请人： Martin Endres , Jens Ossmann
发明人： Martin Endres , Jens Ossmann
IPC分类号： G03B27/54
CPC分类号： G03F7/70233 , G03F7/70108 , G03F7/70191 , G03F7/702
摘要： The disclosure relates to illumination systems for projection exposure apparatuses, projection exposure apparatus, and related components, systems and methods. The illumination systems can be configured to be used with wavelengths less than 193 nm.
摘要翻译：本公开涉及投影曝光装置的照明系统，投影曝光装置及相关部件，系统和方法。照明系统可以被配置为在波长小于193nm的情况下使用。

8. 发明申请

US20070236784A1 ILLUMINATION SYSTEM WITH ZOOM OBJECTIVE 有权
标题翻译：具有变焦目标的照明系统
公开(公告)号：US20070236784A1
公开(公告)日：2007-10-11
申请号：US11696956
申请日：2007-04-05
申请人： Wolfgang Singer , Jens Ossmann
发明人： Wolfgang Singer , Jens Ossmann
IPC分类号： G02B21/00
CPC分类号： G03F7/70233 , G02B21/06 , G03F7/70075 , G03F7/70108 , G03F7/70183 , G03F7/702
摘要： Illumination systems which are designed to illuminate a field in a field plane and simultaneously illuminate a pupil plane with radiation from a light source are disclosed.
摘要翻译：公开了用于照射场平面中的场并同时用来自光源的辐射照射光瞳平面的照明系统。

9. 发明授权

US09588434B2 Catoptric illumination system for microlithography tool 有权
标题翻译：用于微光刻工具的Catoptric照明系统
公开(公告)号：US09588434B2
公开(公告)日：2017-03-07
申请号：US13562515
申请日：2012-07-31
申请人： Jens Ossmann , Martin Endres , Ralf Stuetzle
发明人： Jens Ossmann , Martin Endres , Ralf Stuetzle
IPC分类号： G03B27/54 , G03F7/20
CPC分类号： G03F7/702 , G03F7/70075 , G03F7/70083
摘要： In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation from a source along an optical path to an arc-shaped object field at an object plane of a projection objective, and at least one of the elements has a curved shape that is different from the arc-shape of the object field.
摘要翻译：通常，在一个方面，本发明的特征在于包括微光刻工具的照明系统的系统，所述照明系统包括具有多个元件的第一部件。在系统操作期间，元件将来自光源的源的辐射直接引向投影物镜的物平面处的弧形物场，并且至少一个元件具有与弧不同的弯曲形状对象字段的形状。

10. 发明授权

US08937708B2 Illumination optics for microlithography 有权
标题翻译：用于微光刻的照明光学器件
公开(公告)号：US08937708B2
公开(公告)日：2015-01-20
申请号：US12789772
申请日：2010-05-28
申请人： Martin Endres , Ralf Stuetzle , Jens Ossmann
发明人： Martin Endres , Ralf Stuetzle , Jens Ossmann
IPC分类号： G03B27/54 , G03B27/72 , G03F7/20
CPC分类号： G03F7/702 , G03F7/70075 , G03F7/70083 , G03F7/70191
摘要： An illumination optics for microlithography includes an optical assembly for guiding illumination light to an object field to be illuminated in an object plane. The illumination optics can divide an illumination light radiation bundle into a plurality of radiation sub-bundles which are assigned to different illumination angles of the object field illumination. The illumination optics is configured so that at least some of the radiation sub-bundles are superimposed in a superposition plane which is spaced from the object plane and which is not imaged into the object plane in which superposition takes place. This superposition is such that edges of the superimposed radiation sub-bundles coincide at least partially. In some embodiments, a field intensity setting device includes a plurality of adjacent individual diaphragms which at least attenuate illumination light when exposed thereon. These individual diaphragms are insertable into an illumination light radiation bundle in a direction parallel to an object displacement direction. All individual diaphragms of the field intensity setting device are insertable into the illumination light radiation bundle from one and the same side.
摘要翻译：用于微光刻的照明光学器件包括用于将照明光引导到在物平面中被照明的物场的光学组件。照明光学器件可以将照明光辐射束划分成被分配给物场照明的不同照明角度的多个辐射子束。照明光学器件被配置为使得至少一些辐射子束被叠加在与物平面间隔开并且不被成像到发生叠加的物平面中的叠加平面中。这种叠加使得叠加的辐射子束的边缘至少部分地重合。在一些实施例中，场强度设置装置包括多个相邻的单独膜片，其在暴露于其上时至少衰减照明光。这些单独的隔膜可以在与物体位移方向平行的方向上插入到照明光辐射束中。场强设定装置的各个隔膜均可从同一侧插入照明光辐射束。

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