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    • 6. 发明授权
    • Semiconductor device and manufacturing method
    • 半导体器件及制造方法
    • US08421196B2
    • 2013-04-16
    • US12626425
    • 2009-11-25
    • Hans WeberGerald Deboy
    • Hans WeberGerald Deboy
    • H01L29/06H01L21/336
    • H01L29/0611H01L21/20H01L29/0607H01L29/0634H01L29/0657H01L29/66348H01L29/7397
    • A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone.
    • 半导体器件包括形成在半导体本体内的第一导电类型的漂移区,其中漂移区的相对侧的一侧与半导体本体内的第一区相邻,而另一侧邻接半导体内的第二区。 沿着与半导体主体的表面平行延伸的横向方向彼此相对地形成第一和第二区域中的第一导电类型不同于第一导电类型的第一半导体子区。 第二半导体子区域形成在第一和第二区域的每一个中,并且沿着横向形成在第一半导体子区域之间。 第二半导体子区域内的掺杂剂的平均浓度沿着垂直于表面的垂直方向的第二半导体子区域的延伸的10%至90%的平均浓度小于漂移区域内沿着相应的延伸部分的掺杂剂的平均浓度 。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
    • 半导体器件和制造方法
    • US20110121437A1
    • 2011-05-26
    • US12626425
    • 2009-11-25
    • Hans WeberGerald Deboy
    • Hans WeberGerald Deboy
    • H01L29/06H01L21/336H01L21/20
    • H01L29/0611H01L21/20H01L29/0607H01L29/0634H01L29/0657H01L29/66348H01L29/7397
    • A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone.
    • 半导体器件包括形成在半导体本体内的第一导电类型的漂移区,其中漂移区的相对侧的一侧与半导体本体内的第一区相邻,而另一侧邻接半导体内的第二区。 沿着与半导体主体的表面平行延伸的横向方向彼此相对地形成第一和第二区域中的第一导电类型不同于第一导电类型的第一半导体子区。 第二半导体子区域形成在第一和第二区域的每一个中,并且沿着横向形成在第一半导体子区域之间。 第二半导体子区域内的掺杂剂的平均浓度沿着垂直于表面的垂直方向沿着第二半导体子区域的延伸的10%至90%的平均浓度小于漂移区域内的相应延伸部分的掺杂剂的平均浓度 。