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1. 发明授权

US08790985B2 High voltage resistance coupling structure 有权
标题翻译：高压电阻耦合结构
公开(公告)号：US08790985B2
公开(公告)日：2014-07-29
申请号：US13538043
申请日：2012-06-29
申请人： Uwe Wahl , Markus Hammer , Jens-Peer Stengl
发明人： Uwe Wahl , Markus Hammer , Jens-Peer Stengl
IPC分类号： H01L21/76
CPC分类号： H01L23/5227 , H01L23/3178 , H01L23/585 , H01L23/642 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/03462 , H01L2224/03464 , H01L2224/05155 , H01L2224/05644 , H01L2924/01029 , H01L2924/13091 , H01L2924/14 , H01L2924/01015
摘要： The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance.
摘要翻译：所公开的发明提供了一种用于在包括耦合器的导电元件（例如，具有不同的高电压电位）的共享横向平面的电网之间提供高横向电压电阻的结构和方法。在一个实施例中，提供高横向电压电阻的集成耦合器包括主导电元件和次导电元件。隔离材料横向配置在主要导电元件的电网和次级导电元件的电网之间。隔离材料可以包括低k电介质层，并且防止任何侧向阻挡层（例如，蚀刻停止层，扩散阻挡层等）在第一导电元件和第二导电元件的电网之间延伸。因此，该结构提供了一种电隔离的集成耦合器，其避免了电路之间的电短路（例如，在阻挡层处），导致改进的高耐电压。

2. 发明授权

US08754468B2 Power semiconductor component with plate capacitor structure having an edge plate electrically connected to source or drain potential 有权
标题翻译：具有板电容器结构的功率半导体元件具有电源连接到源极或漏极电位的边缘板
公开(公告)号：US08754468B2
公开(公告)日：2014-06-17
申请号：US12962791
申请日：2010-12-08
申请人： Uwe Wahl , Armin Willmeroth
发明人： Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/76 , H01L29/40
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/7803 , H01L29/7811 , H01L29/7817 , H01L29/7823
摘要： A lateral power semiconductor component has a front side, a rear side and a lateral edge. The component further includes a drift zone of a first conductivity type, a source zone of the first conductivity type, a body zone of a second conductivity type opposite the first conductivity type, and a drain zone of the first conductivity type. A gate forms a MOS structure with the drift zone, the source zone and the body zone. A horizontally extending field plate above each semiconductor region of the power semiconductor component forms a plate capacitor structure with an edge plate lying under the field plate. The edge plate includes a highly doped semiconductor material and is electrically connected to one of a source potential and a drain potential of the power semiconductor component.
摘要翻译：横向功率半导体部件具有前侧，后侧和侧边。该部件还包括第一导电类型的漂移区，第一导电类型的源区，与第一导电类型相反的第二导电类型的体区和第一导电类型的漏区。门形成具有漂移区，源区和体区的MOS结构。在功率半导体部件的每个半导体区域上方的水平延伸的场板形成板状电容器结构，边缘板位于场板下。边缘板包括高度掺杂的半导体材料，并且电连接到功率半导体部件的源极电位和漏极电位之一。

3. 发明申请

US20140001552A1 Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area 有权
标题翻译：包括单元区域和边缘区域的超级结半导体器件
公开(公告)号：US20140001552A1
公开(公告)日：2014-01-02
申请号：US13539973
申请日：2012-07-02
申请人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
发明人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
IPC分类号： H01L29/772 , H01L21/20 , H01L29/02
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/161 , H01L29/167 , H01L29/408 , H01L29/7395 , H01L29/7811 , H01L29/8611
摘要： A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device.
摘要翻译：超结半导体器件的漂移层包括第一导电类型的第一部分和与第一导电类型相反的第二导电类型的第二部分。第一和第二部分在单元区域和围绕单元区域的边缘区域中形成，其中通过漂移层的导通状态或正向电流流过单元区域中的第一部分。电池区域中除了第一部分之外的第一和第二部分中的至少一个包括辅助结构或包含辅助杂质以局部降低雪崩率。本地降低雪崩率提高了超结半导体器件的总电压阻断能力。

4. 发明授权

US08319573B2 Signal transmission arrangement 有权
标题翻译：信号传输布置
公开(公告)号：US08319573B2
公开(公告)日：2012-11-27
申请号：US12646731
申请日：2009-12-23
申请人： Peter Kanschat , Uwe Wahl , Marcus Nuebling , Jens-Peer Stengl
发明人： Peter Kanschat , Uwe Wahl , Marcus Nuebling , Jens-Peer Stengl
IPC分类号： H01P5/12 , H01F30/06
CPC分类号： H03H7/004 , H01F19/00 , H03H7/00
摘要： A signal transmission arrangement includes input terminals for receiving an input signal and output terminals for providing an output signal. A first transformer has a primary winding and a secondary winding, the primary winding being coupled to the input terminals. A second transformer has a primary winding and a secondary winding, the primary winding being coupled to the secondary winding of the first transformer, and the secondary winding being coupled to the output terminals.
摘要翻译：信号传输装置包括用于接收输入信号的输入端和用于提供输出信号的输出端。第一变压器具有初级绕组和次级绕组，初级绕组耦合到输入端子。第二变压器具有初级绕组和次级绕组，初级绕组耦合到第一变压器的次级绕组，次级绕组耦合到输出端子。

5. 发明授权

US08278730B2 High voltage resistance coupling structure 有权
标题翻译：高压电阻耦合结构
公开(公告)号：US08278730B2
公开(公告)日：2012-10-02
申请号：US12607230
申请日：2009-10-28
申请人： Uwe Wahl , Markus Hammer , Jens-Peer Stengl
发明人： Uwe Wahl , Markus Hammer , Jens-Peer Stengl
IPC分类号： H01L21/70
CPC分类号： H01L23/5227 , H01L23/3178 , H01L23/585 , H01L23/642 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/03462 , H01L2224/03464 , H01L2224/05155 , H01L2224/05644 , H01L2924/01029 , H01L2924/13091 , H01L2924/14 , H01L2924/01015
摘要： The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance.
摘要翻译：所公开的发明提供了一种用于在包括耦合器的导电元件（例如，具有不同的高电压电位）的共享横向平面的电网之间提供高横向电压电阻的结构和方法。在一个实施例中，提供高横向电压电阻的集成耦合器包括主导电元件和次导电元件。隔离材料横向配置在主要导电元件的电网和次级导电元件的电网之间。隔离材料可以包括低k电介质层，并且防止任何侧向阻挡层（例如，蚀刻停止层，扩散阻挡层等）在第一导电元件和第二导电元件的电网之间延伸。因此，该结构提供了一种电隔离的集成耦合器，其避免了电路之间的电短路（例如，在阻挡层处），导致改进的高耐电压。

6. 发明授权

US08258573B2 Power semiconductor component with plate capacitor structure and edge termination 有权
标题翻译：功率半导体元件具有平板电容器结构和边缘端接
公开(公告)号：US08258573B2
公开(公告)日：2012-09-04
申请号：US12962780
申请日：2010-12-08
申请人： Uwe Wahl , Armin Willmeroth
发明人： Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/76
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/7803 , H01L29/7811 , H01L29/7817 , H01L29/7823
摘要： A semiconductor component includes a body with a drift zone, a source zone, a body zone, and a drain zone. A gate forms a MOS structure with the drift zone, with the source zone and with the body zone. An edge termination between the lateral edge and the MOS structure includes a plurality of field rings which enclose the MOS structure. The lateral edge is at the same potential as the drift zone, and the edge termination reduces voltage between the lateral edge and the source zone. A horizontally extending edge plate is disposed at the front side between the lateral edge and the edge termination. The edge plate is at the same potential as the drift zone and forms a plate capacitor structure including a field plate lying above the edge plate.
摘要翻译：半导体部件包括具有漂移区的物体，源区，体区和排水区。门形成具有漂移区的MOS结构，源区和身体区。横向边缘和MOS结构之间的边缘终止包括包围MOS结构的多个场环。横向边缘处于与漂移区相同的电位，并且边缘终止减小了侧边缘和源区之间的电压。水平延伸的边缘板设置在侧边缘和边缘终端之间的前侧。边缘板处于与漂移区相同的电位，并形成包括位于边缘板上方的场板的平板电容器结构。

7. 发明申请

US20110095392A1 HIGH VOLTAGE RESISTANCE COUPLING STRUCTURE 有权
标题翻译：高电阻耦合结构
公开(公告)号：US20110095392A1
公开(公告)日：2011-04-28
申请号：US12607230
申请日：2009-10-28
申请人： Uwe Wahl , Markus Hammer , Jens-Peer Stengl
发明人： Uwe Wahl , Markus Hammer , Jens-Peer Stengl
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L23/5227 , H01L23/3178 , H01L23/585 , H01L23/642 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/03462 , H01L2224/03464 , H01L2224/05155 , H01L2224/05644 , H01L2924/01029 , H01L2924/13091 , H01L2924/14 , H01L2924/01015
摘要： The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance.
摘要翻译：所公开的发明提供了一种用于在包括耦合器的导电元件（例如，具有不同的高电压电位）的共享横向平面的电网之间提供高横向电压电阻的结构和方法。在一个实施例中，提供高横向电压电阻的集成耦合器包括主导电元件和次导电元件。隔离材料横向配置在主要导电元件的电网和次级导电元件的电网之间。隔离材料可以包括低k电介质层，并且防止任何侧向阻挡层（例如，蚀刻停止层，扩散阻挡层等）在第一导电元件和第二导电元件的电网之间延伸。因此，该结构提供了一种电隔离的集成耦合器，其避免了电路之间的电短路（例如，在阻挡层处），导致改进的高耐电压。

8. 发明授权

US07872300B2 Power semiconductor component with plate capacitor structure 有权
标题翻译：功率半导体元件具有平板电容器结构
公开(公告)号：US07872300B2
公开(公告)日：2011-01-18
申请号：US11382838
申请日：2006-05-11
申请人： Uwe Wahl , Armin Willmeroth
发明人： Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/76 , H01L21/8238
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/7803 , H01L29/7811 , H01L29/7817 , H01L29/7823
摘要： A power semiconductor component (1) contains a weakly doped drift zone (9), a drain zone (10) and a MOS structure (12) situated at the front side (2) of the power semiconductor component (1). An edge plate (6) of the first conductivity type is provided at its edge (8) above the drift zone (9). The edge plate (6) is doped more highly than the drift zone (9). Situated above the edge plate (6) is an insulation layer (24) with an overlying field plate (7) made of polysilicon. The field plate (7) forms together with the edge plate (6) a plate capacitor structure which increases the drain-source output capacitance of the power semiconductor component (1), so that fewer radiofrequency interference disturbances are caused by the power semiconductor component (1) during switching.
摘要翻译：功率半导体部件（1）包含位于功率半导体部件（1）的前侧（2）的弱掺杂漂移区（9），漏极区（10）和MOS结构（12）。第一导电类型的边缘板（6）设置在漂移区（9）上方的边缘（8）处。边缘板（6）的掺杂比漂移区（9）更高。位于边缘板（6）上方的是具有由多晶硅制成的上覆场板（7）的绝缘层（24）。场板（7）与边缘板（6）一起形成板电容器结构，其增加功率半导体部件（1）的漏 - 源输出电容，使得由功率半导体部件（1）引起更少的射频干扰干扰 1）切换期间。

9. 发明授权

US07791139B2 Integrated circuit including a semiconductor assembly in thin-SOI technology 有权
标题翻译：集成电路包括薄SOI技术中的半导体组件
公开(公告)号：US07791139B2
公开(公告)日：2010-09-07
申请号：US11829264
申请日：2007-07-27
申请人： Uwe Wahl
发明人： Uwe Wahl
IPC分类号： H01L27/02
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/0251
摘要： An integrated circuit including a semiconductor assembly in thin-film SOI technology is disclosed. One embodiment provides a semiconductor assembly in thin-film SOI technology including a first semiconductor substrate structure of a second conductivity type inverse to a first conductivity type in a semiconductor substrate below a first semiconductor layer, a second semiconductor substrate structure of a second conductivity type in a semiconductor substrate below a second semiconductor layer structure, and a third semiconductor substrate structure of the first conductivity type below the first semiconductor layer structure in the semiconductor substrate and otherwise surrounded by the first semiconductor substrate structure.
摘要翻译：公开了一种包括薄膜SOI技术中的半导体组件的集成电路。一个实施例提供一种薄膜SOI技术中的半导体组件，包括在第一半导体层下面的半导体衬底中与第一导电类型相反的第二导电类型的第一半导体衬底结构，第二导电类型的第二半导体衬底结构在第二半导体层结构之下的半导体衬底，以及第一导电类型的第三半导体衬底结构，在第一半导体衬底的第一半导体层结构之下，由第一半导体衬底结构包围。

10. 发明申请

US20100003201A1 Silicone composition 审中-公开
标题翻译：有机硅组成
公开(公告)号：US20100003201A1
公开(公告)日：2010-01-07
申请号：US12217548
申请日：2008-07-07
申请人： Roy Uwe Wahl
发明人： Roy Uwe Wahl
IPC分类号： A61K8/30 , A61K31/695 , A61Q19/00 , A61Q17/00 , A61Q15/00 , A61Q11/00 , A61Q5/00 , A61Q3/00 , A61Q1/00
CPC分类号： C08L83/04 , A61K8/8147 , A61K8/891 , A61K2800/594 , A61Q17/04 , C08G77/045 , C08G77/18 , C08G77/46 , C08G77/70 , C08L2666/04 , C08L2666/14 , C08L2666/02 , C08L2666/54
摘要： This invention relates to silicone-containing compositions, method of making said silicone-containing compositions, and to personal care and other products based on such compositions.
摘要翻译：本发明涉及含硅酮组合物，制备所述含有机硅组合物的方法，以及基于这些组合物的个人护理和其它产品。

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