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    • 2. 发明授权
    • Combination medication applicator and pet grooming
    • 组合药物敷料器和宠物美容
    • US4799456A
    • 1989-01-24
    • US178865
    • 1988-04-04
    • Donald R. Young
    • Donald R. Young
    • A01K13/00
    • A01K13/002A01K13/003
    • A combination pet grooming brush and medication dispenser. A hand-holdable base member has a hollow upper chamber for the retention of liquid medication and air and has a solid lower portion having a passageway with plural branches formed therein. The passageway has a first end, confluent with the hollow chamber, that serves as a drain; the passageway splits into plural branches, each of which is confluent with a hypodermic tube. The tubes extend in parallelism with bristle members from a mounting plate releasably secured to the bottom of the base member. A rotationally mounted and axially displaceable spring-loaded valve member opens the passagway to fluid flow when properly rotated and depressed and closes the passageway when released. Air pressure provides the motive force for fluid flow and is supplied by a squeeze bulb confluent with the hollow chamber and separated therefrom by a check valve. A pressure relief valve formed in the hollow chamber ensures against over-pressurization.
    • 组合宠物美容刷和药物分配器。 手持式基座部件具有用于保持液体药物和空气的中空上部腔室,并且具有固定的下部,其具有形成有多个分支的通道。 通道具有第一端,与中空室融合,用作排水管; 通道分成多个分支,每个分支与皮下注射管汇合。 管子与来自可释放地固定到基部构件的底部的安装板的刷毛构件平行地延伸。 旋转安装并且可轴向移动的弹簧加载的阀构件当适当地旋转和按压时打开流体流动通道,并且在释放时关闭通道。 空气压力提供流体流动的动力,并且通过与中空室汇合并且通过止回阀分离的挤压球来提供。 形成在中空室中的减压阀确保防止过度加压。
    • 10. 发明授权
    • Rapid thermal annealing of silicon dioxide for reduced hole trapping
    • 快速热退火二氧化硅减少空穴捕获
    • US4585492A
    • 1986-04-29
    • US635391
    • 1984-07-30
    • Zeev A. WeinbergDonald R. Young
    • Zeev A. WeinbergDonald R. Young
    • H01L21/316H01L21/268H01L21/28H01L29/51H01L21/265
    • H01L21/28185H01L21/2686H01L21/28202H01L29/518Y10S148/004Y10S438/91
    • Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric breakdown of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000.degree. C.For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000.degree. C. for a duration on the order of 100 seconds, depending on the oxide thickness.Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.
    • 用于集成电路的二氧化硅绝缘膜具有增强的电子特性,包括通过在流动的氧气的环境中暴露包括暴露的二氧化硅层的金属氧化物半导体晶片,使MOS绝缘层的介电击穿增强并且减少了空穴的俘获, 加热卤素灯的辐射持续时间为100秒,以达到1000℃的退火温度。为了减少空穴捕获,环境气体是氧气,退火温度在1000℃左右。 持续时间为100秒,取决于氧化物厚度。 由于先前的处理(包括氮中长时间退火),在硅 - 二氧化硅界面处发生的氮通过随后的氧气快速热退火而增加了二氧化硅的改善。