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1. 发明授权

US3890194A Method for depositing on a substrate a plurality of epitaxial layers in succession 失效
标题翻译：用于在衬底上连续沉积多个外延层的方法
公开(公告)号：US3890194A
公开(公告)日：1975-06-17
申请号：US45995174
申请日：1974-04-11
申请人： RCA CORP
发明人： ETTENBERG MICHAEL
IPC分类号： C30B19/06 , C30B19/10 , H01L21/208 , H01L29/14
CPC分类号： C30B19/063 , C30B19/10 , H01L21/02546 , H01L21/02625
摘要： A deposition furnace boat includes a plurality of wells each of which is adapted to contain a solution of the material to be deposited. A slide extends across the bottoms of the wells and is adapted to carry a substrate from one well to the next. Between each pair of adjacent wells is a narrow slot extending to the surface of the slide. Epitaxial layers are deposited on the substrate by moving the slide to bring the substrate into each well in succession. While the substrate is in each well, the solution is cooled to deposit the material from the solution onto the substrate. When the slide is moved to carry the substrate from one well to the next, the substrate passes beneath the slot which is between the wells. Any of the solution which may be carried with the substrate from the one well will be drawn up into the slot by capillary action so as to prevent contamination of the solution in the next well by any carry-over solution.
摘要翻译：沉积炉船包括多个孔，每个孔适于容纳待沉积材料的溶液。滑块延伸穿过井的底部，并且适于将衬底从一个孔运送到下一个孔。在每对相邻的井之间是延伸到载玻片表面的窄槽。外延层通过移动载玻片沉积在基板上，以使基板连续地进入每个孔。当基材在每个孔中时，将溶液冷却以将材料从溶液沉积到基底上。当滑块移动以将衬底从一个孔运送到下一个孔时，衬底通过位于井之间的槽的下面。通过毛细管作用可以将来自一个孔的基质携带的任何溶液通过毛细管作用吸入槽中，以防止任何结转溶液污染下一个孔中的溶液。

2. 发明授权

US5914519A Air-gap spacer of a metal-oxide-semiconductor device 失效
标题翻译：金属氧化物半导体器件的气隙间隔物
公开(公告)号：US5914519A
公开(公告)日：1999-06-22
申请号：US9302
申请日：1998-01-20
申请人： Jih-Wen Chou , Tony Lin
发明人： Jih-Wen Chou , Tony Lin
IPC分类号： H01L21/336 , H01L29/49 , H01L29/78 , H01L29/14 , H01L29/76
CPC分类号： H01L29/66598 , H01L29/4983 , H01L29/4991 , H01L29/6659 , H01L29/7833
摘要： An air-gap spacer of a metal-oxide-semiconductor device comprises a spacer and a cross-sectional L-shaped air-gap. The spacer is adjacent to a sidewall of the gate electrode but not directly contacts to the gate electrode. The cross-sectional L-shaped air-gap is located between the spacer and the gate electrode and between the spacer and the substrate so that the spacer is separated from the gate electrode and the spacer is partially separated from the substrate.
摘要翻译：金属氧化物半导体器件的气隙间隔件包括间隔件和截面L形气隙。间隔物与栅电极的侧壁相邻，但不直接接触栅电极。横截面的L形气隙位于间隔件和栅电极之间，并且位于间隔件和衬底之间，使得间隔件与栅电极分离，并且间隔件与衬底部分地分离。

3. 发明授权

US5282993A Light-stable semiconductor material based on amorphous germanium and a method for its production 失效
标题翻译：基于无定形锗的光稳定性半导体材料及其制造方法
公开(公告)号：US5282993A
公开(公告)日：1994-02-01
申请号：US861964
申请日：1992-06-17
申请人： Franz Karg
发明人： Franz Karg
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/20 , H01L29/14 , H01L31/028
CPC分类号： H01L31/03765 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： An amorphous semiconductor material which does not age under the action of light is particularly suitable for red-sensitive photovoltaic components and is highly photosensitive. The amorphous semiconductor material is germanium based, particularly a silicon-germanium alloy. To this end, the semiconductor material has a compact, void-free structure, is manufactured in a glow discharge reactor by appropriate variation of the precipitation parameters, and contains one element from Group VI A of the periodic system.
摘要翻译： PCT No.PCT / EP91 / 00165 Sec。 371日期：1992年6月17日 102（e）日期1992年6月17日PCT 1991年1月29日PCT PCT。公开号WO91 / 12632 日期：1991年8月22日。在光的作用下不老化的非晶半导体材料特别适用于红色敏感的光伏组件，并且是高度光敏的。非晶半导体材料是锗基，特别是硅 - 锗合金。为此，半导体材料具有紧凑的无空隙结构，通过适当变化的析出参数在辉光放电反应器中制造，并且包含周期性系统的VIA族中的一种元素。

4. 发明授权

US4717943A Charge storage structure for nonvolatile memories 失效
标题翻译：非易失性存储器的电荷存储结构
公开(公告)号：US4717943A
公开(公告)日：1988-01-05
申请号：US884671
申请日：1986-07-16
申请人： Hans P. Wolf , Donald R. Young
发明人： Hans P. Wolf , Donald R. Young
IPC分类号： H01L29/51 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/12 , H01L29/14
CPC分类号： H01L29/792 , H01L29/511 , H01L29/7882
摘要： A four layer charge storage structure comprising alternate layers of silicon-rich silicon dioxide and silicon dioxide with electrode layers on top and bottom. The upper and middle silicon-rich layers act as enhanced Fowler-Nordheim injectors and the middle silicon-rich layer also stores charges since the silicon particles act as deep traps. The charge storage structure is applicable to nonvolatile memories.
摘要翻译：四层电荷存储结构，其包括富含硅的二氧化硅和二氧化硅的交替层，其顶部和底部具有电极层。上部和中部富硅层作为增强型Fowler-Nordheim注射器，中间富硅层还存储电荷，因为硅颗粒充当深阱。电荷存储结构可应用于非易失性存储器。

5. 发明授权

US5401992A High-density nonvolatile semiconductor memory 失效
标题翻译：高密度非易失性半导体存储器
公开(公告)号：US5401992A
公开(公告)日：1995-03-28
申请号：US153101
申请日：1993-11-17
申请人： Takashi Ono
发明人： Takashi Ono
IPC分类号： H01L27/115 , H01L29/423 , H01L29/14 , H01L29/788
CPC分类号： H01L27/115 , H01L29/42324
摘要： A nonvolatile semiconductor memory has active regions that form parallel strips extending in a first direction in a semiconductor substrate. Each active region has source areas, drain areas, and channel areas for a series of memory cells. Floating gates are formed over the channel areas, and control gates over the floating gates. The upper surfaces of the control gates and the sides of the control gates and floating gates are covered by insulating films. Source interconnecting lines made of a conductive material are formed as parallel strips extending in a second direction different from the first direction on the semiconductor substrate, interconnecting the source areas of the memory cells.
摘要翻译：非易失性半导体存储器具有在半导体衬底中形成沿第一方向延伸的平行条带的有源区。每个有源区域具有用于一系列存储器单元的源极区域，漏极区域和沟道区域。在通道区域上形成浮动栅极，并在浮动栅极上形成控制栅极。控制栅极的上表面和控制栅极和浮动栅极的侧面被绝缘膜覆盖。由导电材料制成的源极互连线形成为沿与半导体衬底上的第一方向不同的第二方向延伸的平行条，互连存储器单元的源极区域。

6. 发明授权

US5396098A Structure and method of manufacturing a semiconductor memory device 失效
标题翻译：制造半导体存储器件的结构和方法
公开(公告)号：US5396098A
公开(公告)日：1995-03-07
申请号：US132960
申请日：1993-10-07
申请人： Sei-jin Kim , Hyungbok Kim
发明人： Sei-jin Kim , Hyungbok Kim
IPC分类号： H01L21/8246 , H01L27/112 , H01L29/78 , H01L29/14
CPC分类号： H01L27/112 , H01L29/7836
摘要： In a semiconductor memory device, and in particular in a NAND-type ROM memory cell, the transistors of a memory cell region and a peripheral circuit portion are manufactured to include a first and second impurity regions. The second impurity region has a higher impurity density impurity than the first impurity region. A third impurity region is added which has a higher impurity density and shallower depth than the impurity density of the first impurity region. Accordingly, the conventional transistor structure of the peripheral circuit portion is maintained while the transistors of the memory cell are optimized to have ideal electrical characteristics, including an increased current driving capability.
摘要翻译：在半导体存储器件中，特别是在NAND型ROM存储单元中，制造存储单元区域和外围电路部分的晶体管，以包括第一和第二杂质区域。第二杂质区具有比第一杂质区杂质浓度更高的杂质。添加具有比第一杂质区的杂质浓度高的杂质密度和浅的深度的第三杂质区。因此，保持外围电路部分的常规晶体管结构，同时存储单元的晶体管被优化以具有理想的电特性，包括增加的电流驱动能力。

7. 发明授权

US4390889A Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction 失效
标题翻译：具有具有相邻InGaAsP p-n结的InGaAs层的光电二极管
公开(公告)号：US4390889A
公开(公告)日：1983-06-28
申请号：US195333
申请日：1980-10-09
申请人： Federico Capasso , Albert L. Hutchinson , Ralph A. Logan
发明人： Federico Capasso , Albert L. Hutchinson , Ralph A. Logan
IPC分类号： H01L31/10 , H01L31/109 , H01L31/11 , H01L29/90 , H01L29/14 , H01L29/161
CPC分类号： H01L31/11 , H01L31/109
摘要： A photodetector useful between 1.0 and 1.6 microns and having an InGaAs layer with an adjacent InGaAsP p-n junction disposed on the InGaAs layer is described.
摘要翻译：描述了在1.0和1.6微米之间有用的InGaAs层和InGaAs层上的相邻的InGaAsP p-n结的光电探测器。

8. 发明授权

US07397136B2 Multi-chip module and single-chip module for chips and proximity connectors 有权
标题翻译：用于芯片和接近连接器的多芯片模块和单芯片模块
公开(公告)号：US07397136B2
公开(公告)日：2008-07-08
申请号：US11183047
申请日：2005-07-15
申请人： Arthur R. Zingher , Bruce M. Guenin , Edward L. Follmer
发明人： Arthur R. Zingher , Bruce M. Guenin , Edward L. Follmer
IPC分类号： H01L23/48 , H01L23/52 , H01L29/14
CPC分类号： H04B5/0012 , H01L23/48 , H01L23/50 , H01L2224/32 , H01L2924/1461 , H01L2924/19041 , H01L2924/19104 , H01L2924/3011 , H01L2924/00
摘要： A single-chip module is described. The module includes a first semiconductor die having a first surface and a second surface. The first semiconductor die is configured to communicate by capacitive coupling using one or more of a plurality of proximity connectors coupled to the first semiconductor die. A cable coupled to the first semiconductor die is configured to couple power signals to the first semiconductor die. A flexibility compliance of at least one section of the cable is greater than a threshold value thereby allowing the module to be positioned in a mounting structure.
摘要翻译：描述了单芯片模块。该模块包括具有第一表面和第二表面的第一半导体管芯。第一半导体管芯被配置为通过电容耦合来使用耦合到第一半导体管芯的多个接近连接器中的一个或多个连接。耦合到第一半导体管芯的电缆被配置为将功率信号耦合到第一半导体管芯。电缆的至少一个部分的灵活性符合性大于阈值，从而允许模块定位在安装结构中。

9. 发明授权

US4739385A Modulation-doped photodetector 失效
标题翻译：调制掺杂光电探测器
公开(公告)号：US4739385A
公开(公告)日：1988-04-19
申请号：US5357
申请日：1987-01-12
申请人： Clyde G. Bethea , Chung Y. Chen , Alfred Y. Cho
发明人： Clyde G. Bethea , Chung Y. Chen , Alfred Y. Cho
IPC分类号： H01L31/112 , H01L29/80 , H01L29/14 , H01L29/40 , H01L31/10
CPC分类号： H01L31/1123
摘要： A modulation-doped field effect photodetector has a fast response time.
摘要翻译：调制掺杂场效应光电检测器具有快速响应时间。

10. 发明授权

US4594173A Indium doped gallium arsenide crystals and method of preparation 失效
标题翻译：铟掺杂砷化镓晶体及其制备方法
公开(公告)号：US4594173A
公开(公告)日：1986-06-10
申请号：US602236
申请日：1984-04-19
申请人： Hudson M. Hobgood , Richard N. Thomas , Donovan L. Barrett
发明人： Hudson M. Hobgood , Richard N. Thomas , Donovan L. Barrett
IPC分类号： C30B15/00 , C30B15/04 , H01L29/14
CPC分类号： C30B15/00 , C30B29/42
摘要： A method of fabrication of low dislocation single crystal indium-doped gallium arsenide, and improved crystal structure. The method is an improved liquid encapsulant Czochralski process with an indium doping level of 5.times.10.sup.19 to 3.times.10.sup.20 indium atoms per cubic centimeter incorporated into the large diameter, long single crystal. The initial melt of elemental indium, gallium, and arsenic contain about 1 atom percent of indium, and inclusion of the indium permits high yield growth of crystals with desired near stoichiometric or slightly arsenic rich composition which exhibit the desired electrical characteristics.
摘要翻译：一种制造低位错单晶铟铟镓砷的方法，改善晶体结构。该方法是改进的液体密封剂Czochralski工艺，铟掺杂水平为5×1019至3×1020铟原子/立方厘米，并入大直径长晶体。元素铟，镓和砷的初始熔融含有约1原子％的铟，并且铟的包含允许具有期望的接近化学计量或略富砷的组合物的晶体的高产率生长，其具有期望的电特性。

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