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1. 发明授权

US4662307A Method and apparatus for recoating optical waveguide fibers 失效
标题翻译：重新涂覆光波导光纤的方法和装置
公开(公告)号：US4662307A
公开(公告)日：1987-05-05
申请号：US740106
申请日：1985-05-31
申请人： Lynn G. Amos , Stuart L. Saikkonen , Donald R. Young
发明人： Lynn G. Amos , Stuart L. Saikkonen , Donald R. Young
IPC分类号： G02B6/24 , B29C35/08 , B29C45/00 , B29C45/14 , B29C45/27 , B29C70/74 , C03C25/10 , C03C25/12 , C03C25/18 , G02B6/38 , G02B6/44 , C23C14/08 , B05D3/06
CPC分类号： G02B6/2558 , B29C35/0888 , B29C45/0053 , B29C45/14549 , B29C45/2708 , B29C70/74 , C03C25/1055 , C03C25/18 , G02B6/2553 , B29C2035/0827 , B29C2045/0075 , B29C2045/14557 , B29C2045/2671 , B29C45/00 , B29L2011/0075
摘要： A split recoating mold for use in recoating optical waveguide fibers with a UV-curable resin is provided wherein: (1) the mold, when closed, forms a cavity for receiving the portion of the fiber which is to be recoated, the cross-sectional size and shape of the cavity being essentially equal to the cross-sectional size and shape of the original fiber; (2) the mold includes an injection port for introducing a UV-curable resin into the cavity; and (3) the mold includes means for introducing ultraviolet light into the cavity so that resin located in regions of the cavity remote from the injection port will cure prior to resin located in regions of the cavity near the injection port.
摘要翻译：提供了一种用于用UV可固化树脂重新涂覆光波导纤维的分层重涂模，其中：（1）模具在闭合时形成用于接收待重新涂覆的纤维部分的空腔，横截面空腔的尺寸和形状基本上等于原始纤维的横截面尺寸和形状; （2）模具包括用于将UV可固化树脂引入空腔的注入口; 和（3）模具包括用于将紫外光引入空腔中的装置，使得位于远离注射口的腔的区域中的树脂将在位于注入口附近的腔中的树脂之前固化。

2. 发明授权

US4799456A Combination medication applicator and pet grooming 失效
标题翻译：组合药物敷料器和宠物美容
公开(公告)号：US4799456A
公开(公告)日：1989-01-24
申请号：US178865
申请日：1988-04-04
申请人： Donald R. Young
发明人： Donald R. Young
IPC分类号： A01K13/00
CPC分类号： A01K13/002 , A01K13/003
摘要： A combination pet grooming brush and medication dispenser. A hand-holdable base member has a hollow upper chamber for the retention of liquid medication and air and has a solid lower portion having a passageway with plural branches formed therein. The passageway has a first end, confluent with the hollow chamber, that serves as a drain; the passageway splits into plural branches, each of which is confluent with a hypodermic tube. The tubes extend in parallelism with bristle members from a mounting plate releasably secured to the bottom of the base member. A rotationally mounted and axially displaceable spring-loaded valve member opens the passagway to fluid flow when properly rotated and depressed and closes the passageway when released. Air pressure provides the motive force for fluid flow and is supplied by a squeeze bulb confluent with the hollow chamber and separated therefrom by a check valve. A pressure relief valve formed in the hollow chamber ensures against over-pressurization.
摘要翻译：组合宠物美容刷和药物分配器。手持式基座部件具有用于保持液体药物和空气的中空上部腔室，并且具有固定的下部，其具有形成有多个分支的通道。通道具有第一端，与中空室融合，用作排水管; 通道分成多个分支，每个分支与皮下注射管汇合。管子与来自可释放地固定到基部构件的底部的安装板的刷毛构件平行地延伸。旋转安装并且可轴向移动的弹簧加载的阀构件当适当地旋转和按压时打开流体流动通道，并且在释放时关闭通道。空气压力提供流体流动的动力，并且通过与中空室汇合并且通过止回阀分离的挤压球来提供。形成在中空室中的减压阀确保防止过度加压。

3. 发明授权

US4143393A High field capacitor structure employing a carrier trapping region 失效
标题翻译：使用载体牵引区域的高场电容器结构
公开(公告)号：US4143393A
公开(公告)日：1979-03-06
申请号：US808500
申请日：1977-06-21
申请人： Donelli J. DiMaria , Donald R. Young
发明人： Donelli J. DiMaria , Donald R. Young
IPC分类号： H01L27/04 , H01L21/3115 , H01L21/316 , H01L21/822 , H01L29/78 , H01L29/94 , H01L29/34
CPC分类号： H01L21/02164 , H01L21/022 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/31155 , H01L21/31662 , H01L21/31683 , H01L29/94
摘要： A high field capacitor structure includes an insulating layer having a carrier trapping region between two electrodes. The trapping region improves electric breakdown characteristics of the capacitor structure and is particularly useful in avoiding the low breakdown voltages and high leakage currents normally encountered in structures with asperities, such as SiO.sub.2 over poly Si. The trapping region can be formed by chemical vapor deposition (CVD) process, by evaporation or by ion implantation. The trapping region is close to the Si, but far enough away to eliminate the possibility of reverse tunneling from discharging the traps in the absence of an applied voltage.

4. 再颁专利

USRE31734E Moderate field hole and electron injection from one interface of MIM or MIS structures 失效
标题翻译：从MIM或MIS结构的一个接口进行适中的场孔和电子注入
公开(公告)号：USRE31734E
公开(公告)日：1984-11-13
申请号：US172058
申请日：1980-07-25
申请人： Donnelli J. DiMaria , Donald R. Young
发明人： Donnelli J. DiMaria , Donald R. Young
IPC分类号： H01L29/417 , G11C16/04 , H01L21/28 , H01L21/3115 , H01L21/8247 , H01L27/088 , H01L29/51 , H01L29/788 , H01L29/792 , H01L29/94 , H01L45/00
CPC分类号： H01L21/28194 , G11C16/0466 , H01L21/31155 , H01L27/088 , H01L29/51 , H01L29/513 , H01L29/792 , H01L29/94 , H01L45/00
摘要： A graded oxide MIM or MIS structure employs band gap grading of the insulator oxide so that holes or electrons (depending on voltage bias) can be injected into the insulator oxide under moderate electric field conditions from the contact at one interface. Electron or hole injection from the opposite interface is blocked due to the larger insulator band gap near this interface. A graded oxide metal-silicon dioxide-silicon (MGOS) semiconductor structure may be fabricated by forming several pyrolytic or CVD SiO.sub.2 layers over a relatively thick thermal SiO.sub.2 layer, with the pyrolytic SiO.sub.2 layers having sequentially increasing excess Si content. This structure may also be fabricated by controlled Si ion implantation in the thermal SiO.sub.2 layer.

5. 再颁专利

USRE31083E Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure 失效
标题翻译：由分级或阶梯式能带隙绝缘体MIM或MIS结构制造的非易失性存储器件
公开(公告)号：USRE31083E
公开(公告)日：1982-11-16
申请号：US213537
申请日：1980-12-05
申请人： Roger F. DeKeersmaecker , Donelli J. DiMaria , Donald R. Young
发明人： Roger F. DeKeersmaecker , Donelli J. DiMaria , Donald R. Young
IPC分类号： H01L29/51 , H01L29/792
CPC分类号： H01L29/513 , H01L29/792
摘要： New non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structures are described. With the graded or stepped insulator, electrons or holes can be injected from the gate electrode at low to moderate applied fields. The carriers flow under the applied field into a wide energy band gap insulator having a prescribed charge trapping layer. This layer captures and stores electrons (write operation) or holes (erase operation) with 100% efficiency.

6. 发明授权

US4217601A Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure 失效
标题翻译：由分级或阶梯式能带隙绝缘体MIM或MIS结构制造的非易失性存储器件
公开(公告)号：US4217601A
公开(公告)日：1980-08-12
申请号：US12279
申请日：1979-02-15
申请人： Roger F. DeKeersmaecker , Donelli J. DiMaria , Donald R. Young
发明人： Roger F. DeKeersmaecker , Donelli J. DiMaria , Donald R. Young
IPC分类号： H01L27/112 , H01L21/28 , H01L21/8246 , H01L21/8247 , H01L29/51 , H01L29/788 , H01L29/792 , H01L29/34
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/28211 , H01L29/51 , H01L29/513 , H01L29/518 , H01L29/792 , Y10S148/082
摘要： New non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structures are described. With the graded or stepped insulator, electrons or holes can be injected from the gate electrode at low to moderate applied fields. The carriers flow under the applied field into a wide energy band gap insulator having a prescribed charge trapping layer. This layer captures and stores electrons (write operation) or holes (erase operation) with 100% efficiency.
摘要翻译：描述了由分级或阶梯式能带隙绝缘体MIM或MIS结构制造的新的非易失性存储器件。对于分级或阶梯绝缘体，可以在低到中等施加的场下从栅电极注入电子或空穴。载体在施加的场下流动到具有规定的电荷捕获层的宽能带隙绝缘体中。该层以100％的效率捕获并存储电子（写入操作）或空穴（擦除操作）。

7. 发明申请

US20090029147A1 AEROGEL-FOAM COMPOSITES 审中-公开
标题翻译： AIRGEL-FOAM复合材料
公开(公告)号：US20090029147A1
公开(公告)日：2009-01-29
申请号：US11761924
申请日：2007-06-12
申请人： Yuehua Tang , Andrew Polli , Carl J. Bilgrien , Donald R. Young , Wendell E. Rhine , George L. Gould
发明人： Yuehua Tang , Andrew Polli , Carl J. Bilgrien , Donald R. Young , Wendell E. Rhine , George L. Gould
IPC分类号： B32B3/26 , C08J9/00 , C08G18/00 , C08J9/28
CPC分类号： B32B27/40 , C08J9/0066 , C08J2205/026 , C08J2205/05 , C08J2323/02 , C08J2375/04 , F24S80/50 , F24S80/56 , Y02E10/40 , Y10T428/249921 , Y10T428/24999
摘要： The invention provides reinforced aerogel monoliths as well as reinforced composites thereof for a variety of uses. Compositions and methods of preparing the monoliths and composites are also provided. Application of these materials in transparent assemblies is also discuss.
摘要翻译：本发明提供增强气凝胶整料以及用于各种用途的增强复合材料。还提供了制备整料和复合材料的组合物和方法。还讨论了这些材料在透明组件中的应用。

8. 发明授权

US4784975A Post-oxidation anneal of silicon dioxide 失效
标题翻译：二氧化硅的后氧化退火
公开(公告)号：US4784975A
公开(公告)日：1988-11-15
申请号：US922510
申请日：1986-10-23
申请人： Karl Hofmann , Gary W. Rubloff , Donald R. Young
发明人： Karl Hofmann , Gary W. Rubloff , Donald R. Young
IPC分类号： H01L21/324 , H01L21/28 , H01L21/316 , H01L29/78 , H01L21/265
CPC分类号： H01L21/28185 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/28211 , H01L21/31662 , Y10S148/004 , Y10S438/909 , Y10S438/91
摘要： The insulating and stabiity characteristics of silicon dioxide gate oxide insulator for field effect transistors are enhanced by subjecting the silicon dioxide to an annealing in an ambient that contains a gaseous oxygen-containing species in an amount sufficient to provide a partial pressure from the oxygen-containing material of about 10.sup.-6 torr to about 10 torr during annealing temperatures of about 500.degree. C. to about 1200.degree. C. Such is carried out for a time sufficient to enhance the insulating and stability characteristics of the silicon dioxide insulator.
摘要翻译：用于场效应晶体管的二氧化硅栅极氧化物绝缘体的绝缘和稳定特性通过使二氧化硅在含有气态含氧物质的环境中进行退火而得到增强，其含量足以提供来自含氧的在约500℃至约1200℃的退火温度期间约10 -6托至约10托的材料。这样进行足以提高二氧化硅绝缘体的绝缘和稳定性的时间。

9. 发明授权

US4585492A Rapid thermal annealing of silicon dioxide for reduced hole trapping 失效
标题翻译：快速热退火二氧化硅减少空穴捕获
公开(公告)号：US4585492A
公开(公告)日：1986-04-29
申请号：US635391
申请日：1984-07-30
申请人： Zeev A. Weinberg , Donald R. Young
发明人： Zeev A. Weinberg , Donald R. Young
IPC分类号： H01L21/316 , H01L21/268 , H01L21/28 , H01L29/51 , H01L21/265
CPC分类号： H01L21/28185 , H01L21/2686 , H01L21/28202 , H01L29/518 , Y10S148/004 , Y10S438/91
摘要： Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric breakdown of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000.degree. C.For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000.degree. C. for a duration on the order of 100 seconds, depending on the oxide thickness.Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.
摘要翻译：用于集成电路的二氧化硅绝缘膜具有增强的电子特性，包括通过在流动的氧气的环境中暴露包括暴露的二氧化硅层的金属氧化物半导体晶片，使MOS绝缘层的介电击穿增强并且减少了空穴的俘获，加热卤素灯的辐射持续时间为100秒，以达到1000℃的退火温度。为了减少空穴捕获，环境气体是氧气，退火温度在1000℃左右。持续时间为100秒，取决于氧化物厚度。由于先前的处理（包括氮中长时间退火），在硅 - 二氧化硅界面处发生的氮通过随后的氧气快速热退火而增加了二氧化硅的改善。

10. 发明授权

US4104675A Moderate field hole and electron injection from one interface of MIM or MIS structures 失效
标题翻译：从MIM或MIS结构的一个接口进行适中的场孔和电子注入
公开(公告)号：US4104675A
公开(公告)日：1978-08-01
申请号：US808501
申请日：1977-06-21
申请人： Donelli J. DiMaria , Donald R. Young
发明人： Donelli J. DiMaria , Donald R. Young
IPC分类号： H01L29/417 , G11C16/04 , H01L21/28 , H01L21/3115 , H01L21/8247 , H01L27/088 , H01L29/51 , H01L29/788 , H01L29/792 , H01L29/94 , H01L45/00 , H01L29/34
CPC分类号： H01L21/28194 , G11C16/0466 , H01L21/31155 , H01L27/088 , H01L29/51 , H01L29/513 , H01L29/792 , H01L29/94 , H01L45/00
摘要： A graded oxide MIM or MIS structure employs band gap grading of the insulator oxide so that holes or electrons (depending on voltage bias) can be injected into the insulator oxide under moderate electric field conditions from the contact at one interface. Electron or hole injection from the opposite interface is blocked due to the larger insulator band gap near this interface. A graded oxide metal-silicon dioxide-silicon (MGOS) semiconductor structure may be fabricated by forming several pyrolytic or CVD SiO.sub.2 layers over a relatively thick thermal SiO.sub.2 layer, with the pyrolytic SiO.sub.2 layers having sequentially increasing excess Si content. This structure may also be fabricated by controlled Si ion implantation in the thermal SiO.sub.2 layer.
摘要翻译：梯度氧化物MIM或MIS结构采用绝缘体氧化物的带隙分级，使得空穴或电子（取决于电压偏置）可以在适当电场条件下从一个界面处的触点注入到绝缘体氧化物中。由于在该界面附近较大的绝缘体带隙，来自相对界面的电子或空穴注入被阻挡。可以通过在相对较厚的热SiO 2层上形成几个热解或CVD SiO 2层来制造分级氧化物金属 - 二氧化硅 - 硅（MGOS）半导体结构，其中热解SiO 2层具有相继增加的过量Si含量。该结构也可以通过在SiO 2层中的受控Si离子注入来制造。

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