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1. 发明授权

US4585492A Rapid thermal annealing of silicon dioxide for reduced hole trapping 失效
标题翻译：快速热退火二氧化硅减少空穴捕获
公开(公告)号：US4585492A
公开(公告)日：1986-04-29
申请号：US635391
申请日：1984-07-30
申请人： Zeev A. Weinberg , Donald R. Young
发明人： Zeev A. Weinberg , Donald R. Young
IPC分类号： H01L21/316 , H01L21/268 , H01L21/28 , H01L29/51 , H01L21/265
CPC分类号： H01L21/28185 , H01L21/2686 , H01L21/28202 , H01L29/518 , Y10S148/004 , Y10S438/91
摘要： Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric breakdown of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000.degree. C.For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000.degree. C. for a duration on the order of 100 seconds, depending on the oxide thickness.Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.
摘要翻译：用于集成电路的二氧化硅绝缘膜具有增强的电子特性，包括通过在流动的氧气的环境中暴露包括暴露的二氧化硅层的金属氧化物半导体晶片，使MOS绝缘层的介电击穿增强并且减少了空穴的俘获，加热卤素灯的辐射持续时间为100秒，以达到1000℃的退火温度。为了减少空穴捕获，环境气体是氧气，退火温度在1000℃左右。持续时间为100秒，取决于氧化物厚度。由于先前的处理（包括氮中长时间退火），在硅 - 二氧化硅界面处发生的氮通过随后的氧气快速热退火而增加了二氧化硅的改善。

2. 发明授权

US4535349A Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing 失效
标题翻译：使用具有电容耦合感测的晶体存储元件的非易失性存储单元
公开(公告)号：US4535349A
公开(公告)日：1985-08-13
申请号：US336477
申请日：1981-12-31
申请人： Zeev A. Weinberg
发明人： Zeev A. Weinberg
IPC分类号： H01L27/112 , G11C11/401 , G11C11/41 , G11C14/00 , G11C17/04 , H01L21/8246 , H01L21/8247 , H01L29/788 , H01L29/792 , H01L29/92 , H01L29/78 , G11C11/40
CPC分类号： H01L29/92 , G11C17/04
摘要： The present invention relates to storage devices which utilize a floating single crystal electrode onto which elcetrons are injected to vary the capacitance of a device which includes capacitance contributions from a pair of insulator regions and that resulting from the uncharged floating single crystal electrode. The memory cell includes at least a pair of other electrodes one of which is utilized to provide two voltage levels to cause injection of electrons and provide an interrogation or read pulse. The other of the pair is utilized as a sense electrode which capacitively senses current when a read pulse is applied to the device via a control electrode. A second embodiment utilizes a pair of injector electrodes, a separate control electrode and a sense electrode in addition to the single crystal floating electrode. A memory array incorporating a device using the single crystal floating electrode is also disclosed.
摘要翻译：本发明涉及使用浮动单晶电极的存储装置，其中注入有埃尔克森管，以改变器件的电容，其包括来自一对绝缘体区域的电容量和由不带电的浮动单晶电极产生的电容。存储单元包括至少一对其它电极，其中一个电极用于提供两个电压电平以引起电子注入并提供询问或读取脉冲。当将读取脉冲经由控制电极施加到器件时，该对中的另一个被用作感测电极，其电容性地感测电流。除了单晶浮动电极之外，第二实施例使用一对注入电极，单独的控制电极和感测电极。还公开了一种结合使用单晶浮动电极的器件的存储器阵列。

3. 发明授权

US5302420A Plasma deposition of fluorocarbon 失效
标题翻译：碳氟化合物的等离子体沉积
公开(公告)号：US5302420A
公开(公告)日：1994-04-12
申请号：US88533
申请日：1993-07-09
申请人： Thao N. Nguyen , Gottlieb S. Oehrlein , Zeev A. Weinberg
发明人： Thao N. Nguyen , Gottlieb S. Oehrlein , Zeev A. Weinberg
IPC分类号： H01L21/31 , B05D7/24 , H01L21/312 , B05D3/06
CPC分类号： B05D1/62 , B05D2506/10 , Y10T428/265 , Y10T428/3154 , Y10T428/31699
摘要： Polymeric fluorocarbon layer is prepared by plasma enhanced chemical vapor deposition in a chamber, the walls of which are coated with a polymeric fluorocarbon film by introducing a gaseous polymerizable fluorocarbon into the chamber and applying radio-frequency at a power level of about 100 to about 1000 watts, employing a pressure of about 10 to 180 mTorr and a self-bias voltage of about -50 to about -700 volts. The polymeric fluorocarbon layer is about 0.05 to about 5 .mu.m thick, has a maximum dielectric constant of about 2.5, has a C/F ratio of about 1:1 to about 1:3, is thermally stable at temperatures of at least about 350.degree. C., and is substantially free from metallic contamination and oxygen.
摘要翻译：聚合物碳氟化合物层通过等离子体增强化学气相沉积在室中制备，其腔壁通过将气态可聚合碳氟化合物引入室中并以约100至约1000的功率水平施加射频来涂覆聚合氟碳膜瓦特，采用约10至180mTorr的压力和约-50至约-700V的自偏压。聚合物碳氟化合物层的厚度为约0.05至约5（μm），具有约2.5的最大介电常数，C / F比为约1:1至约1:3，在至少的温度下是热稳定的约350摄氏度，并且基本上没有金属污染物和氧气。

4. 发明授权

US5244730A Plasma deposition of fluorocarbon 失效
标题翻译：碳氟化合物的等离子体沉积
公开(公告)号：US5244730A
公开(公告)日：1993-09-14
申请号：US693736
申请日：1991-04-30
申请人： Thao N. Nguyen , Gottlieb S. Oehrlein , Zeev A. Weinberg
发明人： Thao N. Nguyen , Gottlieb S. Oehrlein , Zeev A. Weinberg
IPC分类号： H01L21/31 , B05D7/24 , H01L21/312
CPC分类号： B05D1/62 , B05D2506/10 , Y10T428/265 , Y10T428/3154 , Y10T428/31699
摘要： Polymeric fluorocarbon layer is prepared by plasma enhanced chemical vapor deposition in a chamber, the walls of which are coated with a polymeric fluorocarbon film by introducing a gaseous polymerizable fluorocarbon into the chamber and applying radio-frequency at a power level of about 100 to about 1000 watts, employing a pressure of about 10 to 180 mTorr and a self-bias voltage of about -50 to about -700 volts. The polymeric fluorocarbon layer is about 0.05 to about 5 .mu.m thick, has a maximum dielectric constant of about 2.5, has a C/F ratio of about 1:1 to about 1:3, is thermally stable at temperatures of at least about 350.degree. C., and is substantially free from metallic contamination and oxygen.
摘要翻译：聚合物碳氟化合物层通过等离子体增强化学气相沉积在室中制备，其腔壁通过将气态可聚合碳氟化合物引入室中并以约100至约1000的功率水平施加射频来涂覆聚合氟碳膜瓦特，采用约10至180mTorr的压力和约-50至约-700V的自偏压。聚合物碳氟化合物层的厚度为约0.05至约5μm，具有约2.5的最大介电常数，C / F比为约1:1至约1:3，在至少约350℃的温度下是热稳定的并且基本上没有金属污染物和氧气。

5. 发明授权

US4566913A Rapid thermal annealing of silicon dioxide for reduced electron trapping 失效
标题翻译：快速热退火二氧化硅减少电子捕获
公开(公告)号：US4566913A
公开(公告)日：1986-01-28
申请号：US636042
申请日：1984-07-30
申请人： Marc H. Brodsky , Zeev A. Weinberg
发明人： Marc H. Brodsky , Zeev A. Weinberg
IPC分类号： H01L21/324 , H01L21/3105 , H01L21/316 , H01L21/263
CPC分类号： H01L21/3105 , Y10S148/004 , Y10S148/118 , Y10S438/91
摘要： Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including decreased water content and reduced trapping of electrons, by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing inert gas, to heating radiation from a halogen lamp for a duration on the order of ten seconds to achieve annealing temperature in the range 600C.-800C.
摘要翻译：用于集成电路的二氧化硅绝缘膜具有增强的电子特性，包括降低含水量和减少电子俘获，通过在惰性气体环境中暴露包含暴露的二氧化硅层的金属氧化物半导体晶片，将其暴露于来自卤素灯持续10秒的时间以实现在600℃-800℃范围内的退火温度。

6. 发明授权

US5549935A Adhesion promotion of fluorocarbon films 失效
标题翻译：氟碳膜的粘附促进
公开(公告)号：US5549935A
公开(公告)日：1996-08-27
申请号：US368764
申请日：1995-01-04
申请人： Thao N. Nguyen , Gottlieb S. Oehrlein , Zeev A. Weinberg
发明人： Thao N. Nguyen , Gottlieb S. Oehrlein , Zeev A. Weinberg
IPC分类号： C23C16/00 , B05D5/08 , B05D7/24 , H01L21/31 , H01L21/312 , C08J7/18 , C23C14/14 , H05H1/00
CPC分类号： B05D1/62 , B05D5/083
摘要： The adhesion between a polymeric fluorocarbon film and a substrate is improved by providing a thin layer of silicon or a silicide intermediate between the substrate and the polymeric fluorocarbon film, such that a region containing a high density of Si-C bonds is formed.
摘要翻译：通过在基底和聚合物氟碳膜之间提供硅或硅化物中间体的薄层，从而形成含有高密度Si-C键的区域，可以改善聚合物碳氟化合物膜与基底之间的粘合性。

7. 发明授权

US5190792A High-throughput, low-temperature process for depositing oxides 失效
标题翻译：用于沉积氧化物的高温低温工艺
公开(公告)号：US5190792A
公开(公告)日：1993-03-02
申请号：US413357
申请日：1989-09-27
申请人： Joseph M. Blum , Kevin K. Chan , Robert C. McIntosh , Zeev A. Weinberg
发明人： Joseph M. Blum , Kevin K. Chan , Robert C. McIntosh , Zeev A. Weinberg
IPC分类号： C23C16/02 , C23C16/40 , H01L21/316
CPC分类号： C23C16/402 , C23C16/0227
摘要： The present invention relates to a low-pressure chemical vapor deposition (LPCVD) process for depositing silicon dioxide. In particular, the present invention describes a process involving a pre-cleaning step in which all impurities are removed from the substrate followed by a LPCVD step performed at temperatures of between 200.degree. C. and 300.degree. C. The process of the present invention is intended to replace higher temperature LPCVD and thermal processes for depositing silicon dioxide.More particularly, the present invention involves a process in which a substrate is washed using a predetermined cleaning process. The substrate is then exposed to a dilute hydrofluoric acid solution which removes native oxide and contaminants from the surface. Next, the substrate is rinsed with, for example, de-ionized water or ultra-clean water to remove any hydrofluoric acid or other residue from the previous process steps. A layer of material, for example, silicon dioxide, is then deposited using a low-pressure chemical vapor deposition process in which the gas flow comprises silane, oxygen and nitrogen at temperatures below 300.degree. C. Oxide qualities approaching those of thermally grown oxides having been achieved.

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