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1. 发明授权

US07929667B1 High brightness X-ray metrology 有权
标题翻译：高亮度X射线测量
公开(公告)号：US07929667B1
公开(公告)日：2011-04-19
申请号：US12569833
申请日：2009-09-29
申请人： Guorong V. Zhuang , John Fielden
发明人： Guorong V. Zhuang , John Fielden
IPC分类号： H01J35/00 , H01J35/08 , G01N23/20
CPC分类号： H05G2/003 , H05G2/005
摘要： An x-ray metrology tool having only one x-ray source. The x-ray source includes a liquid metal source for heating and melting at least one metal and producing a liquid metal jet, a liquid metal collector for acquiring the liquid metal jet, a liquid metal circulation system for returning liquid metal from the liquid metal collector to the liquid metal source, and an electron beam source for directing an electron beam at the liquid metal jet anode, thereby producing an incident x-ray beam that is directable towards a sample. A detector receives emissions from the sample in response to the incident x-ray beam, and produces signals indicative of properties of the sample. A controller controls the x-ray source, acquires the signals from the detector, and determines the properties of the sample based at least in part on the signals.
摘要翻译：只有一个x射线源的X射线测量工具。 x射线源包括用于加热和熔化至少一种金属并产生液态金属射流的液态金属源，用于获取液态金属射流的液体金属收集器，用于从液态金属收集器返回液态金属的液态金属循环系统以及用于在液态金属喷射阳极处引导电子束的电子束源，从而产生可朝向样品指向的入射X射线束。检测器响应于入射的X射线束接收来自样品的发射，并产生指示样品性质的信号。控制器控制x射线源，从检测器获取信号，并至少部分地基于信号来确定样本的属性。

2. 发明授权

US07928390B1 Infrared metrology 有权
标题翻译：红外测量
公开(公告)号：US07928390B1
公开(公告)日：2011-04-19
申请号：US12193361
申请日：2008-08-18
申请人： Guorong V. Zhuang , John Fielden
发明人： Guorong V. Zhuang , John Fielden
IPC分类号： G01J5/02
CPC分类号： G01J3/447 , G01J3/108
摘要： A spectroscopic instrument of the type providing an infrared light beam from an infrared light source along an infrared light path, where the infrared light beam includes a wide range of wavelengths of radiation within a target range of from about two microns to about three hundred microns, where the infrared light source includes a supercontinuum source having a CO2 pumping laser adapted to fire into a solid-core photonic crystal fiber formed at least in part of at least one of AlClxBr(1-x), NaCl, and ZnSe, which solid-core photonic crystal fiber produces the infrared light beam when excited by the pumping laser.
摘要翻译：这种类型的光谱仪器沿着红外光路提供来自红外光源的红外光束，其中红外光束包括在约2微米至约300微米的目标范围内的宽范围的辐射波长，其中所述红外光源包括具有CO 2泵送激光器的超连续光源，所述激光源适于射入至少部分由AlCl x Br（1-x），NaCl和ZnSe中的至少一种形成的固体光子晶体光纤，核心光子晶体光纤在被激光激发时产生红外光束。

3. 发明授权

US07760364B1 Systems and methods for near-field heterodyne spectroscopy 失效
标题翻译：近场外差光谱的系统和方法
公开(公告)号：US07760364B1
公开(公告)日：2010-07-20
申请号：US12256324
申请日：2008-10-22
申请人： Guorong V. Zhuang , John Fielden , Christopher F. Bevis
发明人： Guorong V. Zhuang , John Fielden , Christopher F. Bevis
IPC分类号： G01B9/02
CPC分类号： G01N21/1717 , G01N2021/1725 , G01Q60/22
摘要： In a near-field heterodyne spectroscopy system, a near-field generation device receives the output of a pump beam source and is also made to vibrate or move at a frequency f to generate a modulated near-field beam having a near-field component. The outputs of the pump beam source and a probe beam source (optional) as well as the modulated near-field beam are directed to the same point on a sample. At least one of the outputs of the pump beam source and probe beam source is modulated at a frequency Ω. Thus, the reflected beam that results from the interaction with the region illuminated by the modulated near-field beam is modulated at frequencies Ω+f and Ω−f. Because the excitation is near-field, the electric field in the sample is evanescent and ensures a shallow probing depth as well as smaller lateral dimensions beyond diffraction limit.
摘要翻译：在近场外差光谱系统中，近场产生装置接收泵浦光束源的输出，并且还使其以频率f振动或移动以产生具有近场分量的调制近场光束。泵浦光束源和探测光束源（可选）以及调制的近场光束的输出被引导到样品上的相同点。泵浦光源和探测光束源的输出中的至少一个以频率＆OHgr进行调制。因此，由与被调制的近场光束照射的区域的相互作用产生的反射光束被调制在频率ωgr+ f和＆omegr; -f。因为激发是近场的，所以样品中的电场是消逝的，并且确保了较深的探测深度以及超过衍射极限的较小的横向尺寸。

4. 发明申请

US20110228263A1 ILLUMINATING A SPECIMEN FOR METROLOGY OR INSPECTION 有权
标题翻译：照亮计量或检验样本
公开(公告)号：US20110228263A1
公开(公告)日：2011-09-22
申请号：US13073986
申请日：2011-03-28
申请人： Yung-Ho (Alex) Chuang , Vladimir Levinski , Xuefeng Liu , John Fielden
发明人： Yung-Ho (Alex) Chuang , Vladimir Levinski , Xuefeng Liu , John Fielden
IPC分类号： G01J3/00
CPC分类号： G01N21/9501 , G01N2021/479
摘要： Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided.
摘要翻译：提供了计量或检查系统的照明子系统，计量系统，检查系统和用于计量测量或检查的照明样本的方法。

5. 发明授权

US07933016B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07933016B2
公开(公告)日：2011-04-26
申请号：US12641663
申请日：2009-12-18
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。提供多个目标。每个目标包括第一和第二结构的一部分，并且每个目标被设计成在其第一和第二结构部分之间具有偏移。用电磁辐射照射靶，从而以第一衍射级和+ 1衍射级获得每个靶的光谱。使用基于检测到的光谱的第一结构和第二结构之间是否存在任何覆盖误差（i）对于每个目标，确定第一衍射级和第+第一衍射之间的第一差分强度（ii）对于具有第一目标和第二目标的多对目标对，确定第一目标的第一差分强度与第二目标的第一差分强度之间的第二差分强度，以及（iii）使用基于从每个目标对确定的第二差分强度的散射测量技术来确定第一结构和第二结构之间的任何覆盖误差。

6. 发明申请

US20100279213A1 METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER 审中-公开
标题翻译：用于控制WAFER中图案特征尺寸变化的方法和系统
公开(公告)号：US20100279213A1
公开(公告)日：2010-11-04
申请号：US12778994
申请日：2010-05-12
申请人： Ady Levy , Michael Hanna , Dan Wack , John Fielden , Christopher F. Bevis , Larry Wagner
发明人： Ady Levy , Michael Hanna , Dan Wack , John Fielden , Christopher F. Bevis , Larry Wagner
IPC分类号： G03F7/20 , G03B27/52
CPC分类号： G03F7/70425 , G01B11/24 , G01B2210/56 , G03F7/38 , G03F7/70675 , H01L22/12 , H01L22/20
摘要： Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of the lithography process in response to the characteristic to reduce variation in dimensions of patterned features formed across the wafer by the lithography process. Altering the parameter compensates for non-time varying spatial variation in a temperature to which the wafer is exposed during a post exposure bake step of the lithography process and an additional variation in the post exposure bake step.
摘要翻译：提供了用于控制跨晶片的图案化特征的尺寸变化的方法和系统。一种方法包括在光刻过程期间测量跨越晶片的多于一个位置处的抗蚀剂中形成的潜像的特性。该方法还包括响应于特性来改变光刻工艺的参数，以减小通过光刻工艺在晶片上形成的图案化特征的尺寸变化。改变参数补偿在光刻工艺的后曝光烘烤步骤期间晶片曝光的温度中的非时间变化的空间变化以及后曝光烘烤步骤的附加变化。

7. 发明申请

US20080316442A1 FEEDFORWARD/FEEDBACK LITHO PROCESS CONTROL OF STRESS AND OVERLAY 有权
标题翻译：反应/反馈LITHO过程控制应力和覆盖
公开(公告)号：US20080316442A1
公开(公告)日：2008-12-25
申请号：US12130699
申请日：2008-05-30
申请人： Michael Adel , John Fielden , Amir Widmann , John Robinson , Dongsub Choi
发明人： Michael Adel , John Fielden , Amir Widmann , John Robinson , Dongsub Choi
IPC分类号： G03B27/68
CPC分类号： G03F7/70258 , G03F7/705 , G03F7/70525 , G03F7/70616 , G03F7/70783
摘要： A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
摘要翻译：描述了光刻工艺中的工艺控制的方法和装置。在基板上执行光刻图案化处理之前或之后，可以在基板上进行计量。可以基于计量产生光刻图案化过程的一个或多个可校正的方法。可以用可校正的方法来调整在衬底（或随后的衬底）上执行的光刻图案化工艺。

8. 发明申请

US20080094630A1 APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：US20080094630A1
公开(公告)日：2008-04-24
申请号：US11963730
申请日：2007-12-21
申请人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher Bevis , John Fielden , Noah Bareket , Kenneth Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus Dziura , Mark Ghinovker
发明人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher Bevis , John Fielden , Noah Bareket , Kenneth Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus Dziura , Mark Ghinovker
IPC分类号： G01B11/00 , G01N21/55 , G01B9/02
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。在一个实施例中，公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。提供了各自包括第一和第二结构的一部分的目标A，B，C和D。目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。目标A，B，C和D用电磁辐射照射，以获得光谱S A，B，C，S和S，分别来自目标A，B，C和D的SUB> D

9. 发明授权

US07359052B2 Systems and methods for measurement of a specimen with vacuum ultraviolet light 有权
标题翻译：用真空紫外光测量样品的系统和方法
公开(公告)号：US07359052B2
公开(公告)日：2008-04-15
申请号：US10846053
申请日：2004-05-14
申请人： John Fielden , Gary Janik , Shing Lee
发明人： John Fielden , Gary Janik , Shing Lee
IPC分类号： G01J4/00
CPC分类号： G01J3/10 , G01J3/0286 , G01J3/36 , G01N21/211 , G01N2021/213
摘要： Various systems for measurement of a specimen are provided. One system includes an optical subsystem configured to perform measurements of a specimen using vacuum ultraviolet light and non-vacuum ultraviolet light. This system also includes a purging subsystem that is configured to maintain a purged environment around the optical subsystem during the measurements. Another system includes a cleaning subsystem configured to remove contaminants from a specimen prior to measurement. In one embodiment, the cleaning subsystem may be a laser-based cleaning subsystem that is configured to remove contaminants from a localized area on the specimen. The system also includes an optical subsystem that is configured to perform measurements of the specimen using vacuum ultraviolet light. The optical subsystem is disposed within a purged environment. In some embodiments, the system may include a differential purging subsystem that is configured to provide the purged environment for the optical subsystem.
摘要翻译：提供了用于测量样本的各种系统。一个系统包括被配置为使用真空紫外光和非真空紫外光进行样本的测量的光学子系统。该系统还包括清洗子系统，其被配置为在测量期间保持围绕光学子系统的净化环境。另一种系统包括清洁子系统，其构造成在测量之前从试样中去除污染物。在一个实施例中，清洁子系统可以是被配置为从样本上的局部区域去除污染物的基于激光的清洁子系统。该系统还包括被配置为使用真空紫外光进行样本的测量的光学子系统。光学子系统设置在净化的环境中。在一些实施例中，系统可以包括差分清洗子系统，其被配置为提供用于光学子系统的净化环境。

10. 发明授权

US07349090B2 Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography 有权
标题翻译：用于确定在光刻之前，期间或之后的样品的性质的方法和系统
公开(公告)号：US07349090B2
公开(公告)日：2008-03-25
申请号：US09956849
申请日：2001-09-20
申请人： Dan Wack , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , John Fielden
发明人： Dan Wack , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , John Fielden
IPC分类号： G01J4/00
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N2021/646 , G01N2021/8825 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a property of a specimen prior to, during, or subsequent to lithography. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，该系统可以被配置为确定样品的多个性质，包括但不限于在光刻之前，期间或之后的样品的性质。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

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