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    • 10. 发明申请
    • Parametric Profiling Using Optical Spectroscopic Systems
    • 使用光谱系统进行参数分析
    • US20090135416A1
    • 2009-05-28
    • US11868740
    • 2007-10-08
    • Andrei V. ShchegrovAnatoly FabrikantMehrdad NikoonahadAdy LevyDaniel C. WackNoah BareketWalter MieherTed Dziura
    • Andrei V. ShchegrovAnatoly FabrikantMehrdad NikoonahadAdy LevyDaniel C. WackNoah BareketWalter MieherTed Dziura
    • G01B11/28G01J3/00G01B11/00
    • G03F7/70616G01N21/211G01N21/47G01N21/4788G01N21/9501G01N21/956G01N21/95607G01N2021/213G03F7/70625G03F7/70641
    • A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
    • 构建种子轮廓的画廊,并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点,由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较,以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs,Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数,以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺,以便补偿轮廓参数中的任何误差。