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1. 发明授权

US08345243B2 Overlay metrology target 有权
标题翻译：覆盖度量目标
公开(公告)号：US08345243B2
公开(公告)日：2013-01-01
申请号：US12717430
申请日：2010-03-04
申请人： Mark Ghinovker , Vladimir Levinski
发明人： Mark Ghinovker , Vladimir Levinski
IPC分类号： G01B11/00 , H01L21/76 , H01L23/544 , G06K9/00
CPC分类号： G03F7/70633
摘要： In one embodiment, a metrology target for determining a relative shift between two or more successive layers of a substrate may comprise; an first structure on a first layer of a substrate and an second structure on a successive layer to the first layer of the substrate arranged to determine relative shifts in alignment in both the x and y directions of the substrate by analyzing the first structure and second structure overlay.
摘要翻译：在一个实施例中，用于确定衬底的两个或更多个连续层之间的相对位移的度量目标可以包括：衬底的第一层上的第一结构和位于衬底的第一层的连续层上的第二结构，布置成通过分析第一结构和第二结构来确定衬底的x和y方向上的对准位移覆盖。

2. 发明授权

US07933016B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07933016B2
公开(公告)日：2011-04-26
申请号：US12641663
申请日：2009-12-18
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。提供多个目标。每个目标包括第一和第二结构的一部分，并且每个目标被设计成在其第一和第二结构部分之间具有偏移。用电磁辐射照射靶，从而以第一衍射级和+ 1衍射级获得每个靶的光谱。使用基于检测到的光谱的第一结构和第二结构之间是否存在任何覆盖误差（i）对于每个目标，确定第一衍射级和第+第一衍射之间的第一差分强度（ii）对于具有第一目标和第二目标的多对目标对，确定第一目标的第一差分强度与第二目标的第一差分强度之间的第二差分强度，以及（iii）使用基于从每个目标对确定的第二差分强度的散射测量技术来确定第一结构和第二结构之间的任何覆盖误差。

3. 发明申请

US20100155968A1 Overlay Metrology Target 有权
标题翻译：覆盖计量目标
公开(公告)号：US20100155968A1
公开(公告)日：2010-06-24
申请号：US12717430
申请日：2010-03-04
申请人： Mark Ghinovker , Vladimir Levinski
发明人： Mark Ghinovker , Vladimir Levinski
IPC分类号： H01L23/544
CPC分类号： G03F7/70633
摘要： In one embodiment, a metrology target for determining a relative shift between two or more successive layers of a substrate may comprise; an first structure on a first layer of a substrate and an second structure on a successive layer to the first layer of the substrate arranged to determine relative shifts in alignment in both the x and y directions of the substrate by analyzing the first structure and second structure overlay.
摘要翻译：在一个实施例中，用于确定衬底的两个或更多个连续层之间的相对位移的度量目标可以包括：衬底的第一层上的第一结构和位于衬底的第一层的连续层上的第二结构，布置成通过分析第一结构和第二结构来确定衬底的x和y方向上的对准位移覆盖。

4. 发明申请

US20100005442A1 Apparatus and Methods for Determining Overlay and Uses of Same 有权
标题翻译：用于确定叠加和使用的装置和方法
公开(公告)号：US20100005442A1
公开(公告)日：2010-01-07
申请号：US12560229
申请日：2009-09-15
申请人： Mark Ghinovker , Michael E. Adel , Jorge Poplawski , Joel L. Seligson
发明人： Mark Ghinovker , Michael E. Adel , Jorge Poplawski , Joel L. Seligson
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F7/70633 , G06F2217/12 , Y02P90/265
摘要： Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.
摘要翻译：公开了提供用于确定扫描仪领域的重叠误差或图案布置误差（PPE）的技术和装置，其用于对样品（例如半导体晶片或器件）进行图案化。该确定在产品晶片或器件上在线执行。也就是说，在产品晶片或器件本身上提供执行覆盖或PPE测量的目标。目标是通过将目标放置在活动区域内或通过在场的模具之间的街道（条带或划线区域）上分布目标来分布在场上。然后可以以多种方式使用从分布在场上的目标获得的所得覆盖物或PPE，以改进用于生产样品的制造过程。例如，所得覆盖层或PPE可用于更准确地预测设备性能和产量，更精确地校正偏离的光刻扫描工具，或确定晶片批次布置。

5. 发明申请

US20090224413A1 APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY 有权
公开(公告)号：US20090224413A1
公开(公告)日：2009-09-10
申请号：US12410317
申请日：2009-03-24
申请人： Mark Ghinovker
发明人： Mark Ghinovker
IPC分类号： H01L23/544
CPC分类号： G01B11/272 , G01N21/4785 , G01N21/9501 , G03F7/70633 , H01L21/68 , H01L21/682 , H01L23/544 , Y10S438/975
摘要： Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry. In another embodiment, a target for determining overlay in the x and/or y direction includes structures on a first layer and structures on a second layer, wherein the structures on the first layer have a COS that is offset by a known amount from the COS of the structures on the second layer. In a specific implementation, any of the disclosed target embodiments may take the form of device structures. In a use case, device structures that have an inherent 180° rotational symmetry or a mirror symmetry in each of the first and second layers are used to measure overlay in a first layer and a second layer. Techniques for imaging targets with flexible symmetry characteristics and analyzing the acquired images to determine overlay or alignment error are disclosed.

6. 发明申请

US20080094630A1 APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：US20080094630A1
公开(公告)日：2008-04-24
申请号：US11963730
申请日：2007-12-21
申请人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher Bevis , John Fielden , Noah Bareket , Kenneth Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus Dziura , Mark Ghinovker
发明人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher Bevis , John Fielden , Noah Bareket , Kenneth Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus Dziura , Mark Ghinovker
IPC分类号： G01B11/00 , G01N21/55 , G01B9/02
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。在一个实施例中，公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。提供了各自包括第一和第二结构的一部分的目标A，B，C和D。目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。目标A，B，C和D用电磁辐射照射，以获得光谱S A，B，C，S和S，分别来自目标A，B，C和D的SUB> D

7. 发明授权

US07181057B2 Overlay marks, methods of overlay mark design and methods of overlay measurements 有权
标题翻译：叠加标记，叠加标记设计方法和覆盖测量方法
公开(公告)号：US07181057B2
公开(公告)日：2007-02-20
申请号：US10186324
申请日：2002-06-26
申请人： Michael Adel , Mark Ghinovker , Walter Dean Mieher , Ady Levy , Dan Wack
发明人： Michael Adel , Mark Ghinovker , Walter Dean Mieher , Ady Levy , Dan Wack
IPC分类号： G06K9/00
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative position between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The overlay mark includes a plurality of working zones, which are used to calculate alignment between a first and a second layer of the substrate or between a first and a second pattern on a single layer of the substrate. Each of the working zones is positioned within the perimeter of the mark. Each of the working zones represents a different area of the mark. The working zones are configured to substantially fill the perimeter of the mark such that the combined area of the working zones is substantially equal to the total area of the mark.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间或在衬底的单个层上的两个或更多个单独产生的图案之间的相对位置的覆盖标记。覆盖标记包括多个工作区，其用于计算衬底的第一层和第二层之间或衬底的单层上的第一和第二图案之间的对准。每个工作区位于标记的周边。每个工作区域代表标记的不同区域。工作区域构造成基本上填满标记的周边，使得工作区域的组合区域基本上等于标记的总面积。

8. 发明授权

US08513822B1 Thin overlay mark for imaging based metrology 有权
标题翻译：用于基于成像的计量学的薄叠加标记
公开(公告)号：US08513822B1
公开(公告)日：2013-08-20
申请号：US12827499
申请日：2010-06-30
申请人： Mark Ghinovker
发明人： Mark Ghinovker
IPC分类号： H01L27/108
CPC分类号： G03F7/70683 , G03F7/70633
摘要： A thin overlay structure for use in imaging based metrology is disclosed. The thin overlay structure may include a first structure and second structure, the first and second structures designed to have a common center of symmetry, both structures being invariant to a 180 degree rotation about the common center of symmetry, wherein a mark region defining the extent of the structures is characterized by a first direction and a second direction orthogonal to the first direction, a length of the mark region along the first direction being greater than a length of the mark region along the second direction.
摘要翻译：公开了一种用于基于成像的计量学的薄覆盖结构。薄覆盖结构可以包括第一结构和第二结构，第一和第二结构被设计成具有共同的对称中心，两个结构不变地围绕公共对称中心旋转180度旋转，其中限定范围的标记区域所述结构的特征在于与所述第一方向正交的第一方向和第二方向，所述标记区域沿着所述第一方向的长度大于所述标记区域沿着所述第二方向的长度。

9. 发明申请

US20120153281A1 APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY 有权
标题翻译：用于确定具有旋转或反射对称结构的重叠的装置和方法
公开(公告)号：US20120153281A1
公开(公告)日：2012-06-21
申请号：US13407124
申请日：2012-02-28
申请人： Mark GHINOVKER
发明人： Mark GHINOVKER
IPC分类号： H01L23/544 , H01L21/66
CPC分类号： G01B11/272 , G01N21/4785 , G01N21/9501 , G03F7/70633 , H01L21/68 , H01L21/682 , H01L23/544 , Y10S438/975
摘要： A semiconductor target for determining a relative shift between two or more successive layers of a substrate is provided. The target comprises a plurality of first structures formed in a first layer, and the first structures have a first center of symmetry (COS). The target further comprises a plurality of second structures formed in a second layer, and the second structures have second COS. The difference between the first COS and the second COS corresponds to an overlay error between the first and second layer and wherein the first and second structures have a 180° rotational symmetry, without having a 90° rotational symmetry, with respect to the first and second COS, respectively.
摘要翻译：提供了用于确定衬底的两个或更多个连续层之间的相对位移的半导体靶。目标包括形成在第一层中的多个第一结构，并且第一结构具有第一对称中心（COS）。目标还包括形成在第二层中的多个第二结构，第二结构具有第二COS，第一COS和第二COS之间的差对应于第一和第二层之间的重叠误差，并且其中第一和第二结构相对于第一和第二COS分别具有不具有90°旋转对称性的180°旋转对称性。

10. 发明授权

US07879627B2 Overlay marks and methods of manufacturing such marks 有权
标题翻译：覆盖标记和制造这种标记的方法
公开(公告)号：US07879627B2
公开(公告)日：2011-02-01
申请号：US12533295
申请日：2009-07-31
申请人： Mark Ghinovker , Michael Adel , Walter D. Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter D. Mieher , Ady Levy , Dan Wack
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间的相对位移的覆盖标记以及使用这种重叠标记的方法。在一个实施例中，覆盖标记包括至少一个测试图案，用于在第一方向上确定基板的第一和第二层之间的相对移动。测试模式包括第一组工作区和第二组工作区。第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。所述第二组工作区域设置在所述基板的第二层上，并且具有至少两个工作区域，所述至少两个工作区域相对于彼此对角地相对并且在空间上偏移。第一组工作区域通常相对于第二组工作区域成角度，从而形成“X”形测试图案。

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