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    • 1. 发明授权
    • Device for centering wafers
    • 晶圆定心装置
    • US08764026B2
    • 2014-07-01
    • US12761044
    • 2010-04-15
    • Gregory GeorgeHale JohnsonDennis Patricio
    • Gregory GeorgeHale JohnsonDennis Patricio
    • B23B31/18
    • H01L21/6835B32B38/1858B32B43/006B32B2309/105B32B2457/14H01L21/67092H01L21/67132H01L21/673H01L2221/68318H01L2221/68327Y10S156/93Y10S156/932Y10S156/941Y10S156/942Y10S156/943Y10T29/49817Y10T29/53274Y10T156/1132Y10T156/1153Y10T156/1158Y10T156/1168Y10T156/1189Y10T156/1911Y10T156/1917Y10T156/1944Y10T156/1972Y10T156/1978Y10T279/18Y10T279/21Y10T279/26Y10T279/29
    • A device for centering circular wafers includes a support chuck for supporting a circular wafer to be centered upon its top surface, left, right and middle centering linkage rods and a cam plate synchronizing the rectilinear motion of the left, right and middle centering linkage rods. The left centering linkage rod includes a first rotating arm at a first end and rectilinear motion of the left centering linkage rod translates into rotational motion of the first rotating arm. The right centering linkage rod comprises a second rotating arm at a first end, and rectilinear motion of the right centering linkage rod translates into rotational motion of the second rotating arm. The first and second rotating arms are rotatable around an axis perpendicular to the top surface of the support chuck and comprise a curved edge surface configured to roll against the curved edge of the circular wafer. The middle centering linkage rod includes a third alignment arm at a first end. The third alignment arm is placed in contact with the curved edge of the circular wafer and linear motion of the middle centering linkage rod in the Y-direction pushes the third alignment arm and the circular wafer toward or away from the center of the support chuck. The cam plate includes first and second linear cam profiles. The first cam profile provides rectilinear motion for the middle centering linkage rod and the second linear cam profile provides rectilinear motion for the left and right centering linkage rods.
    • 用于定心圆形晶片的装置包括支撑卡盘,用于将圆形晶片支撑在其顶部中心定位的中心,左右中心对中连杆和中心对中连杆的直线运动同步的凸轮板。 左对中连杆包括在第一端处的第一旋转臂,并且左对中连杆的直线运动转换成第一旋转臂的旋转运动。 右对中连杆包括在第一端的第二旋转臂,右对中连杆的直线运动转换为第二旋转臂的旋转运动。 第一和第二旋转臂可绕垂直于支撑卡盘的顶表面的轴线旋转,并且包括弯曲的边缘表面,该弯曲边缘表面被配置成相对于圆形晶片的弯曲边缘滚动。 中间定心连杆在第一端包括第三对准臂。 第三对准臂被放置成与圆形晶片的弯曲边缘接触,并且Y中心定中心连杆的线性运动将第三对准臂和圆形晶片推向或远离支撑卡盘的中心。 凸轮板包括第一和第二直线凸轮轮廓。 第一凸轮轮廓为中间定心联动杆提供直线运动,第二直线凸轮轮廓为左右对中连杆提供直线运动。
    • 5. 发明授权
    • Apparatus and method for semiconductor wafer alignment
    • 用于半导体晶圆对准的装置和方法
    • US08139219B2
    • 2012-03-20
    • US12416779
    • 2009-04-01
    • Gregory George
    • Gregory George
    • G01B11/00
    • H01L21/681H01L21/67092H01L23/544H01L2223/5442H01L2223/54426H01L2223/54453H01L2924/0002H01L2924/00
    • An apparatus for aligning semiconductor wafers includes equipment for positioning a first surface of a first semiconductor wafer directly opposite to a first surface of a second semiconductor wafer and equipment for aligning a first structure on the first semiconductor wafer with a second structure on the first surface of the second semiconductor wafer. The aligning equipment comprises at least one movable alignment device configured to be moved during alignment and to be inserted between the first surface of the first semiconductor wafer and the first surface of the second semiconductor wafer. The positioning equipment are vibrationally and mechanically isolated from the alignment device motion.
    • 用于对准半导体晶片的装置包括用于定位与第二半导体晶片的第一表面直接相对的第一半导体晶片的第一表面的设备和用于将第一半导体晶片上的第一结构与第二半导体晶片的第一表面上的第一结构对准的设备 第二半导体晶片。 对准设备包括至少一个可移动对准装置,其构造成在对准期间移动并且被插入在第一半导体晶片的第一表面和第二半导体晶片的第一表面之间。 定位设备与对准装置的运动振动和机械隔离。
    • 7. 发明授权
    • Apparatus for high throughput wafer bonding
    • 高通量晶片接合装置
    • US08425715B2
    • 2013-04-23
    • US13079446
    • 2011-04-04
    • Gregory George
    • Gregory George
    • B29C65/00B29C65/08B29C45/00B29C47/00B29C43/02B29C49/00B29C51/00B29C43/10B32B37/00B30B5/02B30B5/04B30B15/34H01L21/30H01L21/46H01L21/76B29D24/00B29D29/00B28B21/36A01J21/00A01J25/12A21C3/00A21C11/00A23G1/20A23G3/02A23P1/00B28B11/08B29C55/28
    • H01L21/6719H01L21/67092
    • An industrial-scale high throughput wafer bonding apparatus includes a wafer bonder chamber extending along a main axis and comprising a plurality of chamber zones, a plurality of heater/isolator plates, a guide rod system extending along the main axis, a pair of parallel track rods extending along the main axis, and first pressure means. The chamber zones are separated from each other and thermally isolated from each other by the heater/isolator plates. The heater/isolator plates are oriented perpendicular to the main axis, are movably supported and guided by the guide rod system and are configured to move along the direction of the main axis. Each of the chamber zones is dimensioned to accommodate an aligned wafer pair and the wafer pairs are configured to be supported by the parallel track rods. The first pressure means is configured to apply a first force perpendicular to a first end heater/isolator plate. The applied first force causes the heater/isolator plates to move toward each other along the main axis and thereby causes the collapse of each chamber zone volume and the application of bonding pressure onto the wafer pairs.
    • 一种工业规模的高通量晶片接合装置,包括沿着主轴延伸的晶片接合室,包括多个室区,多个加热器/隔离板,沿主轴延伸的导杆系统,一对平行轨道 杆沿着主轴线延伸,以及第一压力装置。 室区彼此分离并通过加热器/隔离板彼此热隔离。 加热器/隔离板垂直于主轴定向,由导杆系统可移动地支撑和引导,并被构造成沿着主轴线的方向移动。 每个室区的尺寸被设计成适应对准的晶片对,并且晶片对构造成由平行轨道杆支撑。 第一压力装置构造成施加垂直于第一端加热器/隔离板的第一力。 所施加的第一力使得加热器/隔离板沿着主轴线彼此移动,从而导致每个室区域体积的崩溃以及将结合压力施加到晶片对上。