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1. 发明申请

US20120305390A1 ELECTRODE AND METHOD OF FORMING THE MASTER ELECTRODE 有权
标题翻译：电极和形成主电极的方法
公开(公告)号：US20120305390A1
公开(公告)日：2012-12-06
申请号：US13429733
申请日：2012-03-26
申请人： Mikael Fredenberg , Patrik Möller , Peter Wiwen-Nilsson , Cecilia Aronsson , Matteo Dainese
发明人： Mikael Fredenberg , Patrik Möller , Peter Wiwen-Nilsson , Cecilia Aronsson , Matteo Dainese
IPC分类号： C25D17/12
CPC分类号： C25D5/02 , B81C99/0085 , C23C14/34 , C23C14/3414 , C25D1/003 , C25D1/10 , C25D5/022 , C25D5/10 , C25D5/50 , C25D7/12 , C25D7/123 , C25F3/14 , H01L21/2885 , H01L21/32134 , H01L21/76838 , H01L21/76843 , H01L21/76852 , H01L21/76873 , H01L21/76877 , H01L21/76885 , H05K3/07 , H05K3/108 , H05K3/241 , H05K3/4647 , H05K2203/0117 , H05K2203/0733 , Y10T156/10
摘要： An electrode for forming an electrochemical cell with a substrate and a method of forming said electrode. The electrode comprises a carrier provided with an insulating layer which is patterned at a front side. Conducting material in an electrode layer is applied in the cavities of the patterned insulating layer and in contact with the carrier. A connection layer is applied at the backside of the carrier and in contact with the carrier. The periphery of the electrode is covered by the insulating material.
摘要翻译：用于形成具有基底的电化学电池的电极和形成所述电极的方法。电极包括设置有在前侧被图案化的绝缘层的载体。将电极层中的导电材料施加在图案化绝缘层的空腔中并与载体接触。连接层被施加在载体的背面并与载体接触。电极的周边由绝缘材料覆盖。

2. 发明申请

US20120267241A1 MASTER ELECTRODE AND METHOD OF FORMING IT 审中-公开
标题翻译：主电极及其形成方法
公开(公告)号：US20120267241A1
公开(公告)日：2012-10-25
申请号：US13456142
申请日：2012-04-25
申请人： Mikael Fredenberg , Patrik Möller , Peter Wiwen-Nilsson , Cecilia Aronsson , Matteo Dainese
发明人： Mikael Fredenberg , Patrik Möller , Peter Wiwen-Nilsson , Cecilia Aronsson , Matteo Dainese
IPC分类号： C25D17/12 , C25F7/00
CPC分类号： C25D5/02 , B81C99/0085 , C23C14/34 , C23C14/3414 , C25D1/003 , C25D1/10 , C25D5/022 , C25D5/10 , C25D5/50 , C25D7/12 , C25D7/123 , C25F3/14 , H01L21/2885 , H01L21/32134 , H01L21/76838 , H01L21/76843 , H01L21/76852 , H01L21/76873 , H01L21/76877 , H01L21/76885 , H05K3/07 , H05K3/108 , H05K3/241 , H05K3/4647 , H05K2203/0117 , H05K2203/0733 , Y10T156/10
摘要： A master electrode is arranged on substrate and comprises a pattern layer at least partly of an insulating material and a first surface provided with a plurality of cavities in which a conducting material is arranged, said electrode conductor being electrically connected to at least one electrode current supply; said substrate comprising a surface contacting or adjacent said first surface and having a conductor arranged thereon, said substrate conductor being electrically connected to the at least one current supply; whereby a plurality of electrochemical cells are formed delimited by said cavities, said substrate conductor and said electrode conductor, said cells comprising an electrolyte; wherein an electrode resistance between said electrode conductor and said electrode current supply and a substrate resistance between said substrate conductor and said substrate current supply provide a predetermined current density in each electrochemical cell.
摘要翻译：主电极布置在基板上，并且包括至少部分绝缘材料的图案层和设置有多个空腔的第一表面，其中布置有导电材料，所述电极导体电连接到至少一个电极电流源 ; 所述衬底包括与所述第一表面接触或相邻的表面并且具有布置在其上的导体，所述衬底导体电连接到所述至少一个电流源; 由此由所述腔体，所述衬底导体和所述电极导体形成多个电化学电池，所述电池包括电解质; 其中所述电极导体和所述电极电流源之间的电极电阻和所述衬底导体与所述衬底电流源之间的衬底电阻在每个电化学电池中提供预定的电流密度。

3. 发明授权

US07790009B2 Method and electrode for defining and replicating structures in conducting materials 有权
标题翻译：用于定义和复制导电材料结构的方法和电极
公开(公告)号：US07790009B2
公开(公告)日：2010-09-07
申请号：US10734223
申请日：2003-12-15
申请人： Patrik Möller , Mikael Fredenberg , Peter Wiwen-Nilsson
发明人： Patrik Möller , Mikael Fredenberg , Peter Wiwen-Nilsson
IPC分类号： C25D5/02
CPC分类号： H05K3/205 , C25D5/02 , C25D7/12 , C25F3/14 , H05K3/00 , H05K3/07 , H05K2203/0117
摘要： The present invention concerns an electrochemical pattern replication method, ECPR, and a construction of a conductive electrode for production of applications involving micro and nano structures. An etching or plating pattern, which is defined by a conductive electrode, a master electrode, is replicated on an electrically conductive material, a substrate. The master electrode is put in close contact with the substrate and the etching/plating pattern is directly transferred onto the substrate by using a contact etching/plating process. The contact etching/plating process is performed in local etching/plating cells, that are formed in closed or open cavities between the master electrode and the substrate.
摘要翻译：本发明涉及一种电化学图案复制方法，ECPR，以及用于生产涉及微结构和纳米结构的应用的导电电极的结构。由导电电极，主电极限定的蚀刻或电镀图案被复制在导电材料，基板上。主电极与衬底紧密接触，并且通过使用接触蚀刻/电镀工艺将蚀刻/电镀图案直接转印到衬底上。接触蚀刻/电镀工艺在局部蚀刻/电镀电池中进行，其形成在主电极和基板之间的闭合或敞开的空腔中。

4. 发明申请

US20100044080A1 Metal Deposition 审中-公开
公开(公告)号：US20100044080A1
公开(公告)日：2010-02-25
申请号：US12608326
申请日：2009-10-29
申请人： Lex Kosowsky
发明人： Lex Kosowsky
IPC分类号： H05K1/00 , C25D5/00 , C25D5/02 , C25D5/48
CPC分类号： C25D5/022 , C25D5/54 , H05K1/0373 , H05K3/07 , H05K3/107 , H05K3/188 , H05K2201/0191 , H05K2201/0215 , H05K2201/0738 , H05K2201/09036 , H05K2203/1492
摘要： Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.

5. 发明申请

US20090288954A1 DEVICE SUITABLE FOR ELECTROCHEMICALLY PROCESSING AN OBJECT AS WELL AS A METHOD FOR MANUFACTURING SUCH A DEVICE, A METHOD FOR ELECTROCHEMICALLY PROCESSING AN OBJECT, USING SUCH A DEVICE, AS WELL AS AN OBJECT FORMED BY USING SUCH A METHOD 有权
标题翻译：适用于电子化处理对象的装置，作为用于制造这样一种装置的方法，一种用于电子处理对象的方法，使用这样的装置，以及通过使用这种方法形成的对象
公开(公告)号：US20090288954A1
公开(公告)日：2009-11-26
申请号：US12307812
申请日：2007-07-04
申请人： Bart Juul Wilhelmina Van Den Bossche , Marius Ioan Purcar
发明人： Bart Juul Wilhelmina Van Den Bossche , Marius Ioan Purcar
IPC分类号： B41M5/20 , C25D17/10
CPC分类号： B41M5/20 , B23H1/00 , B23H1/04 , B23H1/10 , B23H9/06 , B23H9/10 , C25D5/02 , C25D17/007 , C25D17/12 , C25F7/00 , H05K3/064 , H05K3/07 , H05K3/241
摘要： A device which is suitable for electrochemically processing an object comprises at least an electrolyte-containing chamber, means for supporting the object to be processed in the chamber, a counter electrode disposed in the chamber as well as means for applying an electrical potential difference between the object to be processed and the counter electrode. The device furthermore comprises at least one holder and at least one rod-shaped coelectrode supported by the holder, which rod-shaped coelectrode extends towards the object and which in use has a polarity opposite that of the counter electrode.
摘要翻译：适用于电化学处理物体的装置至少包括含电解质的室，用于在腔室内支撑待处理物体的装置，设置在腔室中的对电极以及用于在腔室内施加电位差的装置待处理物体和对电极。该装置还包括至少一个保持器和由保持器支撑的至少一个杆状共电极，该杆状共电极朝向物体延伸，并且其在使用中具有与对电极的极性相反的极性。

6. 发明申请

US20090229855A1 ELECTRODE AND METHOD OF FORMING THE MASTER ELECTRODE 审中-公开
标题翻译：电极和形成主电极的方法
公开(公告)号：US20090229855A1
公开(公告)日：2009-09-17
申请号：US12470452
申请日：2009-05-21
申请人： Mikael Fredenberg , Patrik Moller , Peter Wiwen-Nilsson , Cecillia Aronsson , Matteo Dainese
发明人： Mikael Fredenberg , Patrik Moller , Peter Wiwen-Nilsson , Cecillia Aronsson , Matteo Dainese
IPC分类号： H01B5/00 , B05D5/12 , C23C16/513 , C23C16/00 , C23C14/34 , B32B37/12 , B32B37/00 , C25D11/02 , C23F1/00
CPC分类号： C25D5/02 , B81C99/0085 , C23C14/34 , C23C14/3414 , C25D1/003 , C25D1/10 , C25D5/022 , C25D5/10 , C25D5/50 , C25D7/12 , C25D7/123 , C25F3/14 , H01L21/2885 , H01L21/32134 , H01L21/76838 , H01L21/76843 , H01L21/76852 , H01L21/76873 , H01L21/76877 , H01L21/76885 , H05K3/07 , H05K3/108 , H05K3/241 , H05K3/4647 , H05K2203/0117 , H05K2203/0733 , Y10T156/10
摘要： An electrode for forming an electrochemical cell with a substrate and a method of forming said electrode. The electrode comprises a carrier (1) provided with an insulating layer (7) which is patterned at a front side. Conducting material in an electrode layer (4) is applied in the cavities of the patterned insulating layer and in contact with the carrier. An connection layer (5) is applied at the backside of the carrier and in contact with the carrier. The periphery of the electrode is covered by the insulating material.
摘要翻译：用于形成具有基底的电化学电池的电极和形成所述电极的方法。电极包括设置有在前侧被图案化的绝缘层（7）的载体（1）。在电极层（4）中的导电材料施加在图案化绝缘层的空腔中并与载体接触。连接层（5）被施加在载体的背面并与载体接触。电极的周边由绝缘材料覆盖。

7. 发明申请

US20090205967A1 METHOD OF FORMING A MULTILAYER STRUCTURE 审中-公开
标题翻译：形成多层结构的方法
公开(公告)号：US20090205967A1
公开(公告)日：2009-08-20
申请号：US12412319
申请日：2009-03-26
申请人： Mikael FREDENBERG , Patrik Moller , Peter Wiwen-Nilsson
发明人： Mikael FREDENBERG , Patrik Moller , Peter Wiwen-Nilsson
IPC分类号： C25D5/02 , C25F3/14
CPC分类号： C25D5/02 , B81C99/0085 , C23C14/34 , C23C14/3414 , C25D1/003 , C25D1/10 , C25D5/022 , C25D5/10 , C25D5/50 , C25D7/12 , C25D7/123 , C25F3/14 , H01L21/2885 , H01L21/32134 , H01L21/76838 , H01L21/76843 , H01L21/76852 , H01L21/76873 , H01L21/76877 , H01L21/76885 , H05K3/07 , H05K3/108 , H05K3/241 , H05K3/4647 , H05K2203/0117 , H05K2203/0733 , Y10T156/10
摘要： Method of forming a multilayer structure by electroetching or electroplating on a substrate. A seed layer is arranged on the substrate and a master electrode is applied thereto. The master electrode has a pattern layer forming multiple electrochemical cells with the substrate. A voltage is applied for etching the seed layer or applying a plating material to the seed layer. A dielectric material (9) is arranged between the structures (8) thus formed. The dielectric layer is planarized for uncovering the structure below and another structure layer is formed on top of the first. Alternatively, the dielectric layer is applied with a thickness two layers and the structure below is accessed by selective etching of the dielectric layer for selectively uncovering the top surface of the structure below. Multiple structure layer may also be formed in one step.
摘要翻译：通过在基板上电蚀或电镀形成多层结构的方法。种子层布置在衬底上，并且将主电极施加到衬底上。主电极具有与衬底形成多个电化学电池的图案层。施加电压以蚀刻种子层或将电镀材料施加到种子层。在如此形成的结构（8）之间布置介电材料（9）。介电层被平坦化以揭开下面的结构，而另一个结构层形成在第一层的顶部。或者，电介质层被施加厚度为两层，并且通过选择性蚀刻电介质层来访问下面的结构，以选择性地露出下面结构的顶表面。也可以在一个步骤中形成多结构层。

8. 发明授权

US07551454B2 Thin-film assembly and method for producing said assembly 有权
标题翻译：薄膜组装及其制造方法
公开(公告)号：US07551454B2
公开(公告)日：2009-06-23
申请号：US10568563
申请日：2004-09-09
申请人： Markus Wuchse , Nikolai Haslebner , Ronald Frosch , Manfred Riedler , Günther Leising
发明人： Markus Wuchse , Nikolai Haslebner , Ronald Frosch , Manfred Riedler , Günther Leising
IPC分类号： H05K1/18
CPC分类号： H01L27/3288 , H05K1/0393 , H05K1/16 , H05K3/048 , H05K3/07 , H05K3/244 , H05K3/383 , H05K3/421 , H05K2203/0392
摘要： A thin-film assembly (1) including a substrate (2) and at least one electronic thin-film component (8) applied on the substrate by thin-film technology, wherein a base electrode (4) is provided on the substrate, on which base electrode thin-film layers (21) forming part of the thin-film component are arranged together with an upper top electrode (9); the substrate (2) is comprised of a printed circuit board (2) known per se and including an insulation-material base body (3) and a metal coating as the conductor layer (5), wherein the conductor layer (5) forms the base electrode (4) and, to this end, is smoothed at least on the location of the thin-film component (8), and wherein a contact layer (18) is applied by thin-film technology between the smoothed, optionally reinforced, conductor layer (5) and the superimposed thin-film layers (21) of the thin-film component (8), which contact layer is physically or chemically adsorbed on the surface of the base electrode (4).
摘要翻译：一种薄膜组件（1），其包括通过薄膜技术施加在所述基板上的基板（2）和至少一个电子薄膜部件（8），其中在所述基板上设置有基极（4）形成薄膜部件一部分的基极薄膜层（21）与上部上部电极（9）一起配置; 基板（2）由本身已知的包括绝缘材料基体（3）和作为导体层（5）的金属涂层（5）的印刷电路板（2）组成，其中导体层（5）形成至少在薄膜组件（8）的位置上平滑基底电极（4），并且为此目的，使薄膜技术上的接触层（18）在平滑的，任选地加强的，导体层（5）和薄膜部件（8）的叠加薄膜层（21），该接触层物理或化学吸附在基极（4）的表面上。

9. 发明授权

US07112271B2 Method and apparatus for making very low roughness copper foil 有权
标题翻译：制造非常低的粗糙度铜箔的方法和装置
公开(公告)号：US07112271B2
公开(公告)日：2006-09-26
申请号：US10722469
申请日：2003-11-28
申请人： Cha Jae Jo , Chang Hee Choi , Sangyum Kim , Jeong Ik Kim
发明人： Cha Jae Jo , Chang Hee Choi , Sangyum Kim , Jeong Ik Kim
IPC分类号： C25F3/16
CPC分类号： C25F3/02 , H05K3/07 , H05K3/383 , H05K2201/0355
摘要： A method for manufacturing a very low roughness copper foil and an apparatus for manufacturing the copper foil. In the method of the present invention, a pickling process, an electrolytic polishing process and a washing process are successively performed after the copper foil was manufactured. In order to manufacture the very low roughness copper foil, the electrolytic polishing process is accomplished with the copper foil to face a metal cathode plate and supplying a current in order to perform the electrolytic polishing.
摘要翻译：制造非常低的粗糙度铜箔的方法和铜箔的制造装置。在本发明的方法中，在制造铜箔之后依次进行酸洗处理，电解抛光处理和洗涤处理。为了制造非常低的粗糙度的铜箔，利用铜箔面对金属阴极板并提供电流以进行电解抛光来实现电解抛光工艺。

10. 发明申请

US20050082257A1 Method of etching copper on cards 失效
标题翻译：在卡上刻蚀铜的方法
公开(公告)号：US20050082257A1
公开(公告)日：2005-04-21
申请号：US10487745
申请日：2002-09-09
申请人： Gust Bierings , Bjarni Bjarnason , Goran Frennesson , Jenny Sjoberg
发明人： Gust Bierings , Bjarni Bjarnason , Goran Frennesson , Jenny Sjoberg
IPC分类号： C25F3/02 , C25F7/00 , H05K3/07 , C23F1/00
CPC分类号： H05K3/07 , C25F3/02 , C25F7/00
摘要： Etching of copper on a card is achieved by applying an electrical voltage between a cathode (102) and the card (42), the card (42) thereby forming an anode. The cathode (102) and the card (42) are immersed in an electrolyte comprising a first component, which may be reduced from a first state in the form of an ion having a metal atom with a first positive oxidation number to a second state in the form of an ion having said metal atom with a second positive oxidation number, which is less than said first positive oxidation number. A first redox potential in the electrolyte for reduction from the first to the second state is larger than a second redox potential in the electrolyte for reduction of divalent copper ions to metallic copper. During the etching metallic copper on the card is oxidised and transferred into positively charged copper ions while the first component is reduced from its first state to its second state. The quality of the etched structures on the card is improved since no metallic copper is precipitated on the cathode.
摘要翻译：通过在阴极（102）和卡（42）之间施加电压，卡（42）从而形成阳极来实现卡上铜的蚀刻。将阴极（102）和卡（42）浸入包含第一组分的电解质中，该第一组分可以从具有第一正氧化数的金属原子的离子形式的第一状态还原为第二状态具有第二正氧化数的具有所述金属原子的离子的形式，其小于所述第一正氧化数。用于从第一状态到第二状态还原的电解质中的第一氧化还原电位大于用于还原二价铜离子至金属铜的电解质中的第二氧化还原电位。在蚀刻期间，卡上的金属铜被氧化并转移到带正电荷的铜离子中，同时第一组分从其第一状态减少到其第二状态。卡上蚀刻结构的质量得到改善，因为阴极上没有金属铜沉淀。

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