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1. 发明授权

US06448152B1 Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer 有权
标题翻译：用于在订单由客户放置之前产生多个供体晶片并处理晶片的方法和系统
公开(公告)号：US06448152B1
公开(公告)日：2002-09-10
申请号：US09906865
申请日：2001-07-16
申请人： Francois J. Henley , Sien G. Kang , Igor J. Malik
发明人： Francois J. Henley , Sien G. Kang , Igor J. Malik
IPC分类号： H01L2130
CPC分类号： H01L21/76254 , G05B2219/32024 , G05B2219/45031
摘要： A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer. For example, a plurality of donor wafers with different silicon layer thicknesses along with a plurality of handle wafers with different oxide layer thicknesses are fabricated. Subsequently, a customer may place an order for silicon-on-insulator (SOI) wafers which share defined parameters. Therefore, a prefabricated donor wafer and handle wafer are selected based on the customer's defined parameters and then bonded together. Next, the donor wafer is cleaved from the handle wafer wherein the handle wafer retains the silicon layer of the donor wafer. The silicon layer thickness of the handle wafer may be altered to meet the customer's parameters. For example, an epitaxial smoothing process may decrease the silicon layer thickness while an epitaxial thickening process may increase the silicon layer thickness.
摘要翻译：一种用于在订单由客户放置之前产生多个供体晶片并处理晶片的方法。例如，制造具有不同硅层厚度的多个施主晶片以及具有不同氧化物层厚度的多个处理晶片。随后，客户可以订购共享定义参数的绝缘体上硅（SOI）晶圆。因此，根据客户定义的参数选择预制的供体晶片和处理晶片，然后结合在一起。接下来，施主晶片从手柄晶片切割，其中处理晶片保持施主晶片的硅层。可以改变处理晶片的硅层厚度以满足客户的参数。例如，外延平滑处理可以减小硅层厚度，而外延增厚工艺可以增加硅层厚度。

2. 发明授权

US07595499B2 Method and system for fabricating strained layers for the manufacture of integrated circuits 失效
标题翻译：用于制造用于制造集成电路的应变层的方法和系统
公开(公告)号：US07595499B2
公开(公告)日：2009-09-29
申请号：US12070574
申请日：2008-02-19
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L29/06 , H01L31/072 , H01L31/0336 , H01L31/0328
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

3. 发明授权

US06265328B1 Wafer edge engineering method and device 失效
标题翻译：晶圆边工程方法及装置
公开(公告)号：US06265328B1
公开(公告)日：2001-07-24
申请号：US09239477
申请日：1999-01-28
申请人： Francois J. Henley , Nathan Cheung , William G. Eng , Igor J. Malik
发明人： Francois J. Henley , Nathan Cheung , William G. Eng , Igor J. Malik
IPC分类号： B05C1102
CPC分类号： H01L21/67092 , H01L21/6708 , H01L21/6715
摘要： The present invention provides an apparatus (400) (500) for abating edge material from a substrate, e.g., SOI. The apparatus includes, among other elements, a housing and a rotatable member (401) coupled to the housing. The rotatable member is a susceptor, which is relatively flat for securing a substrate. A movable dispensing head (421) is coupled to the housing and is overlying the rotatable member. The movable dispensing head (421) is operable to emit a stream of directed fluid to one or more locations of the susceptor. The apparatus also includes a fluid source, which is coupled to the movable dispensing head. The fluid source provides fluid to ablate material from the substrate.
摘要翻译：本发明提供一种用于从衬底（例如SOI）减缓边缘材料的装置（400）（500）。除了其它元件之外，该装置包括壳体和联接到壳体的可旋转构件（401）。可旋转构件是一个基座，它相对平坦，用于固定基板。可移动分配头（421）联接到壳体并且覆盖在可旋转构件上。可移动分配头（421）可操作以将定向流体流发射到基座的一个或多个位置。该装置还包括流体源，其连接到可移动分配头。流体源提供流体以从基底中烧蚀材料。

4. 发明授权

US07391047B2 System for forming a strained layer of semiconductor material 有权
标题翻译：用于形成半导体材料的应变层的系统
公开(公告)号：US07391047B2
公开(公告)日：2008-06-24
申请号：US11378126
申请日：2006-03-17
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L29/06 , H01L31/072 , H01L31/0336 , H01L31/0328
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

5. 发明授权

US07390724B2 Method and system for lattice space engineering 有权
标题翻译：格子空间工程方法与系统
公开(公告)号：US07390724B2
公开(公告)日：2008-06-24
申请号：US11104298
申请日：2005-04-11
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/76251
摘要： A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.
摘要翻译：一种用于制造多层基片的系统。该系统具有支撑构件，适于处理包括从第一状态到第二状态的第一侧和第二侧的材料膜。支撑构件附接到材料膜的第一侧。第二种状态包括压力状态。该系统具有手柄基板，该基板包括面，该表面适于附接到材料膜的第二侧。支撑构件能够从材料膜的第一侧分离，从而使包括处于第二状态的材料膜的手柄基板附接到手柄基板的表面。

6. 发明授权

US07094666B2 Method and system for fabricating strained layers for the manufacture of integrated circuits 有权
公开(公告)号：US07094666B2
公开(公告)日：2006-08-22
申请号：US11043477
申请日：2005-01-24
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

7. 发明申请

US20080141510A1 Method and system for fabricating strained layers for the manufacture of integrated circuits 失效
标题翻译：用于制造用于制造集成电路的应变层的方法和系统
公开(公告)号：US20080141510A1
公开(公告)日：2008-06-19
申请号：US12070574
申请日：2008-02-19
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L21/67
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

8. 发明授权

US08637382B2 Layer transfer of films utilizing thermal flux regime for energy controlled cleaving 有权
标题翻译：利用能量控制切割的热通量方式的薄膜层转移
公开(公告)号：US08637382B2
公开(公告)日：2014-01-28
申请号：US13195259
申请日：2011-08-01
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： B23K26/361
摘要： A method and system for cleaving a film of material utilizing thermal flux. The method includes providing a substrate having a face and an underlying cleave region including a prepared initiation region. Additionally, the method includes subjecting the initiation region to a first thermal flux to form a cleave front separating the cleave region of the substrate to a film portion and a bulk portion. The method further includes subjecting an area of the bulk portion substantially in the vicinity of the cleave front to a second thermal flux to cause a temperature difference above and below the cleave region for inducing a propagation of the cleave front expanding the film portion to the area at the expense of the bulk portion. Furthermore, the method includes determining a scan path for the second thermal flux based on the cleave front. Moreover, the method includes scanning the second thermal flux to follow the scan path to further propagate the cleave front.
摘要翻译：利用热通量切割材料薄膜的方法和系统。该方法包括提供具有面和包含准备的起始区的下面的切割区的基底。另外，该方法包括使起始区域经受第一热通量以形成将基板的切割区域分隔成膜部分和主体部分的分裂前沿。该方法还包括将大部分的大部分区域的基本上在劈裂前端附近的区域进行第二热通量，以在裂开区域的上方和下方引起温度差异，以引起将劈裂面扩展到该区域的区域以散装部分为代价。此外，该方法包括基于切割前沿确定用于第二热通量的扫描路径。此外，该方法包括扫描第二热通量以跟随扫描路径以进一步传播切割前沿。

9. 发明授权

US08124499B2 Method and structure for thick layer transfer using a linear accelerator 有权
标题翻译：使用线性加速器进行厚层转移的方法和结构
公开(公告)号：US08124499B2
公开(公告)日：2012-02-28
申请号：US11935197
申请日：2007-11-05
申请人： Francois J. Henley , Albert Lamm , Babak Adibi
发明人： Francois J. Henley , Albert Lamm , Babak Adibi
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/3221
摘要： Free standing thickness of materials are fabricated using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. A semiconductor substrate is provided having a surface region and a thickness. The surface region of the semiconductor substrate is subjected to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. The surface region of the semiconductor substrate is subjected to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level.
摘要翻译：使用一个或多个半导体衬底（例如单晶硅，多晶硅，硅锗，锗，III / IV族材料等）制造材料的独立的厚度。提供具有表面区域和厚度的半导体衬底。半导体衬底的表面区域经受使用线性加速器产生的第一组多个高能粒子，以在裂开区域内形成多个吸杂位点的区域，该裂开区域设置在该表面区域的下方以限定厚度的待分离材料，半导体衬底保持在第一温度。半导体衬底的表面区域受到使用线性加速器产生的第二多个高能粒子，第二多个高能粒子被设置成将劈裂区域的应力水平从第一应力水平增加到第二应力水平。

10. 发明授权

US08012851B2 Method and structure for fabricating solar cells 有权
标题翻译：制造太阳能电池的方法和结构
公开(公告)号：US08012851B2
公开(公告)日：2011-09-06
申请号：US12731069
申请日：2010-03-24
申请人： Francois J. Henley , Philip James Ong
发明人： Francois J. Henley , Philip James Ong
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L31/1804 , H01L31/0232 , H01L31/0392 , H01L31/03925 , H01L31/0725 , H01L31/0745 , H01L31/077 , H01L31/1872 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.
摘要翻译：光伏电池装置，例如太阳能电池，太阳能电池板和制造方法。该装置具有包括第一表面和第二表面的光学透明基底。包括具有第一表面区域和第二表面区域的材料的第一厚度（例如，半导体材料，单晶材料）。在优选实施例中，表面区域覆盖在光学透明基板的第一表面上。该装置具有设置在材料厚度的第一表面区域和光学透明材料的第一表面之间的光学耦合材料。半导体材料的第二厚度覆盖在第二表面区域上以形成半导体材料的所得厚度。

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