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1. 发明授权

US06265328B1 Wafer edge engineering method and device 失效
标题翻译：晶圆边工程方法及装置
公开(公告)号：US06265328B1
公开(公告)日：2001-07-24
申请号：US09239477
申请日：1999-01-28
申请人： Francois J. Henley , Nathan Cheung , William G. Eng , Igor J. Malik
发明人： Francois J. Henley , Nathan Cheung , William G. Eng , Igor J. Malik
IPC分类号： B05C1102
CPC分类号： H01L21/67092 , H01L21/6708 , H01L21/6715
摘要： The present invention provides an apparatus (400) (500) for abating edge material from a substrate, e.g., SOI. The apparatus includes, among other elements, a housing and a rotatable member (401) coupled to the housing. The rotatable member is a susceptor, which is relatively flat for securing a substrate. A movable dispensing head (421) is coupled to the housing and is overlying the rotatable member. The movable dispensing head (421) is operable to emit a stream of directed fluid to one or more locations of the susceptor. The apparatus also includes a fluid source, which is coupled to the movable dispensing head. The fluid source provides fluid to ablate material from the substrate.
摘要翻译：本发明提供一种用于从衬底（例如SOI）减缓边缘材料的装置（400）（500）。除了其它元件之外，该装置包括壳体和联接到壳体的可旋转构件（401）。可旋转构件是一个基座，它相对平坦，用于固定基板。可移动分配头（421）联接到壳体并且覆盖在可旋转构件上。可移动分配头（421）可操作以将定向流体流发射到基座的一个或多个位置。该装置还包括流体源，其连接到可移动分配头。流体源提供流体以从基底中烧蚀材料。

2. 发明授权

US07595499B2 Method and system for fabricating strained layers for the manufacture of integrated circuits 失效
标题翻译：用于制造用于制造集成电路的应变层的方法和系统
公开(公告)号：US07595499B2
公开(公告)日：2009-09-29
申请号：US12070574
申请日：2008-02-19
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L29/06 , H01L31/072 , H01L31/0336 , H01L31/0328
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

3. 发明授权

US06448152B1 Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer 有权
标题翻译：用于在订单由客户放置之前产生多个供体晶片并处理晶片的方法和系统
公开(公告)号：US06448152B1
公开(公告)日：2002-09-10
申请号：US09906865
申请日：2001-07-16
申请人： Francois J. Henley , Sien G. Kang , Igor J. Malik
发明人： Francois J. Henley , Sien G. Kang , Igor J. Malik
IPC分类号： H01L2130
CPC分类号： H01L21/76254 , G05B2219/32024 , G05B2219/45031
摘要： A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer. For example, a plurality of donor wafers with different silicon layer thicknesses along with a plurality of handle wafers with different oxide layer thicknesses are fabricated. Subsequently, a customer may place an order for silicon-on-insulator (SOI) wafers which share defined parameters. Therefore, a prefabricated donor wafer and handle wafer are selected based on the customer's defined parameters and then bonded together. Next, the donor wafer is cleaved from the handle wafer wherein the handle wafer retains the silicon layer of the donor wafer. The silicon layer thickness of the handle wafer may be altered to meet the customer's parameters. For example, an epitaxial smoothing process may decrease the silicon layer thickness while an epitaxial thickening process may increase the silicon layer thickness.
摘要翻译：一种用于在订单由客户放置之前产生多个供体晶片并处理晶片的方法。例如，制造具有不同硅层厚度的多个施主晶片以及具有不同氧化物层厚度的多个处理晶片。随后，客户可以订购共享定义参数的绝缘体上硅（SOI）晶圆。因此，根据客户定义的参数选择预制的供体晶片和处理晶片，然后结合在一起。接下来，施主晶片从手柄晶片切割，其中处理晶片保持施主晶片的硅层。可以改变处理晶片的硅层厚度以满足客户的参数。例如，外延平滑处理可以减小硅层厚度，而外延增厚工艺可以增加硅层厚度。

4. 发明授权

US07391047B2 System for forming a strained layer of semiconductor material 有权
标题翻译：用于形成半导体材料的应变层的系统
公开(公告)号：US07391047B2
公开(公告)日：2008-06-24
申请号：US11378126
申请日：2006-03-17
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L29/06 , H01L31/072 , H01L31/0336 , H01L31/0328
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

5. 发明授权

US07390724B2 Method and system for lattice space engineering 有权
标题翻译：格子空间工程方法与系统
公开(公告)号：US07390724B2
公开(公告)日：2008-06-24
申请号：US11104298
申请日：2005-04-11
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/76251
摘要： A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.
摘要翻译：一种用于制造多层基片的系统。该系统具有支撑构件，适于处理包括从第一状态到第二状态的第一侧和第二侧的材料膜。支撑构件附接到材料膜的第一侧。第二种状态包括压力状态。该系统具有手柄基板，该基板包括面，该表面适于附接到材料膜的第二侧。支撑构件能够从材料膜的第一侧分离，从而使包括处于第二状态的材料膜的手柄基板附接到手柄基板的表面。

6. 发明授权

US07094666B2 Method and system for fabricating strained layers for the manufacture of integrated circuits 有权
公开(公告)号：US07094666B2
公开(公告)日：2006-08-22
申请号：US11043477
申请日：2005-01-24
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

7. 发明申请

US20080141510A1 Method and system for fabricating strained layers for the manufacture of integrated circuits 失效
标题翻译：用于制造用于制造集成电路的应变层的方法和系统
公开(公告)号：US20080141510A1
公开(公告)日：2008-06-19
申请号：US12070574
申请日：2008-02-19
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L21/67
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

8. 发明授权

US6103599A Planarizing technique for multilayered substrates 失效
标题翻译：多层基板的平面化技术
公开(公告)号：US6103599A
公开(公告)日：2000-08-15
申请号：US89931
申请日：1998-06-03
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L21/306 , H01L21/762 , H01L21/00
CPC分类号： H01L21/30604 , H01L21/76254 , Y10S438/977
摘要： The present invention provides a multilayered wafer 10 such as an SOI wafer having a novel implanted layer. This implanted layer is removable and provides a resulting wafer having a substantially uniform surface. The wafer includes a bulk substrate 11 and an insulating layer 13 formed overlying the bulk substrate 15. A film of semiconductor material is formed overlying the insulating layer. Surface non-uniformities are formed overlying and in the film of semiconductor material. The non-uniformities are implanted, and are bordered by a substantially uniform interface 17 at a selected depth underlying the surface non-uniformities. The substantially uniform interface provides a substantially uniform resulting surface for the SOI wafer.
摘要翻译：本发明提供了具有新颖植入层的SOI晶片等多层晶片10。该植入层是可移除的并且提供具有基本均匀表面的所得晶片。该晶片包括大块基片11和形成在本体基片15上的绝缘层13.半导体材料薄膜覆盖在绝缘层上。在半导体材料的膜上形成表面非均匀性。非均匀性被植入，并且在表面非均匀性下方的选定深度处由基本上均匀的界面17界定。基本上均匀的界面为SOI晶片提供了基本上均匀的所得表面。

9. 发明授权

US06291313B1 Method and device for controlled cleaving process 有权
公开(公告)号：US06291313B1
公开(公告)日：2001-09-18
申请号：US09313959
申请日：1999-05-18
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L2122
CPC分类号： H01L21/76254 , H01L21/187 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/7813
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

10. 发明授权

US06187110B1 Device for patterned films 有权
标题翻译：图案薄膜装置
公开(公告)号：US06187110B1
公开(公告)日：2001-02-13
申请号：US09316739
申请日：1999-05-21
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L2130
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有以选择的方式将能量粒子（22）通过施主衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定施主衬底所选深度以上的材料（12）和所选深度处的图案的颗粒。能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放部分供体基质。

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