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1. 发明授权

US08637382B2 Layer transfer of films utilizing thermal flux regime for energy controlled cleaving 有权
标题翻译：利用能量控制切割的热通量方式的薄膜层转移
公开(公告)号：US08637382B2
公开(公告)日：2014-01-28
申请号：US13195259
申请日：2011-08-01
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： B23K26/361
摘要： A method and system for cleaving a film of material utilizing thermal flux. The method includes providing a substrate having a face and an underlying cleave region including a prepared initiation region. Additionally, the method includes subjecting the initiation region to a first thermal flux to form a cleave front separating the cleave region of the substrate to a film portion and a bulk portion. The method further includes subjecting an area of the bulk portion substantially in the vicinity of the cleave front to a second thermal flux to cause a temperature difference above and below the cleave region for inducing a propagation of the cleave front expanding the film portion to the area at the expense of the bulk portion. Furthermore, the method includes determining a scan path for the second thermal flux based on the cleave front. Moreover, the method includes scanning the second thermal flux to follow the scan path to further propagate the cleave front.
摘要翻译：利用热通量切割材料薄膜的方法和系统。该方法包括提供具有面和包含准备的起始区的下面的切割区的基底。另外，该方法包括使起始区域经受第一热通量以形成将基板的切割区域分隔成膜部分和主体部分的分裂前沿。该方法还包括将大部分的大部分区域的基本上在劈裂前端附近的区域进行第二热通量，以在裂开区域的上方和下方引起温度差异，以引起将劈裂面扩展到该区域的区域以散装部分为代价。此外，该方法包括基于切割前沿确定用于第二热通量的扫描路径。此外，该方法包括扫描第二热通量以跟随扫描路径以进一步传播切割前沿。

2. 发明授权

US08124499B2 Method and structure for thick layer transfer using a linear accelerator 有权
标题翻译：使用线性加速器进行厚层转移的方法和结构
公开(公告)号：US08124499B2
公开(公告)日：2012-02-28
申请号：US11935197
申请日：2007-11-05
申请人： Francois J. Henley , Albert Lamm , Babak Adibi
发明人： Francois J. Henley , Albert Lamm , Babak Adibi
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/3221
摘要： Free standing thickness of materials are fabricated using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. A semiconductor substrate is provided having a surface region and a thickness. The surface region of the semiconductor substrate is subjected to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. The surface region of the semiconductor substrate is subjected to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level.
摘要翻译：使用一个或多个半导体衬底（例如单晶硅，多晶硅，硅锗，锗，III / IV族材料等）制造材料的独立的厚度。提供具有表面区域和厚度的半导体衬底。半导体衬底的表面区域经受使用线性加速器产生的第一组多个高能粒子，以在裂开区域内形成多个吸杂位点的区域，该裂开区域设置在该表面区域的下方以限定厚度的待分离材料，半导体衬底保持在第一温度。半导体衬底的表面区域受到使用线性加速器产生的第二多个高能粒子，第二多个高能粒子被设置成将劈裂区域的应力水平从第一应力水平增加到第二应力水平。

3. 发明授权

US08012851B2 Method and structure for fabricating solar cells 有权
标题翻译：制造太阳能电池的方法和结构
公开(公告)号：US08012851B2
公开(公告)日：2011-09-06
申请号：US12731069
申请日：2010-03-24
申请人： Francois J. Henley , Philip James Ong
发明人： Francois J. Henley , Philip James Ong
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L31/1804 , H01L31/0232 , H01L31/0392 , H01L31/03925 , H01L31/0725 , H01L31/0745 , H01L31/077 , H01L31/1872 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.
摘要翻译：光伏电池装置，例如太阳能电池，太阳能电池板和制造方法。该装置具有包括第一表面和第二表面的光学透明基底。包括具有第一表面区域和第二表面区域的材料的第一厚度（例如，半导体材料，单晶材料）。在优选实施例中，表面区域覆盖在光学透明基板的第一表面上。该装置具有设置在材料厚度的第一表面区域和光学透明材料的第一表面之间的光学耦合材料。半导体材料的第二厚度覆盖在第二表面区域上以形成半导体材料的所得厚度。

4. 发明授权

US07911016B2 Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process 有权
公开(公告)号：US07911016B2
公开(公告)日：2011-03-22
申请号：US12695008
申请日：2010-01-27
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L27/14
CPC分类号： H01L21/26506 , H01L21/2658
摘要： A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region. Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate. Each of the donor substrate regions has the donor substrate thickness without a definable cleave region.

5. 发明授权

US07776717B2 Controlled process and resulting device 有权
公开(公告)号：US07776717B2
公开(公告)日：2010-08-17
申请号：US11841970
申请日：2007-08-20
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , B81C1/0038 , B81C2201/0191 , H01L21/2007
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

6. 发明申请

US20090277314A1 LAYER TRANSFER OF FILMS UTILIZING CONTROLLED SHEAR REGION 有权
标题翻译：使用控制剪切区域的薄膜的层转移
公开(公告)号：US20090277314A1
公开(公告)日：2009-11-12
申请号：US12435230
申请日：2009-05-04
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： B26D7/10
CPC分类号： H01L31/1804 , B26F3/004 , B26F3/16 , H01L21/76254 , H01L31/18 , Y10T83/041 , Y10T83/283
摘要： A film of material may be formed by providing a semiconductor substrate having a surface region and a cleave region located at a predetermined depth beneath the surface region. During a process of cleaving the film from the substrate, shear in the cleave region is carefully controlled. According to certain embodiments, an in-plane shear component (KII) is maintained near zero, sandwiched between a tensile region and a compressive region. In one embodiment, cleaving can be accomplished using a plate positioned over the substrate surface. The plate serves to constrain movement of the film during cleaving, and together with a localized thermal treatment reduces shear developed during the cleaving process. According to other embodiments, the KII component is purposefully maintained at a high level and serves to guide and drive fracture propagation through the cleave sequence. In one embodiment, the high KII component is achieved by adiabatic heating of silicon through exposure to E-beam radiation, which imparts a highly abrupt thermal gradient and resulting stress at a precisely defined depth in the silicon.
摘要翻译：可以通过提供具有表面区域和位于表面区域下方的预定深度处的切割区域的半导体衬底来形成材料膜。在从基板切割薄膜的过程中，精细地控制切割区域中的剪切。根据某些实施例，平面内剪切分量（KII）保持接近零，夹在拉伸区域和压缩区域之间。在一个实施例中，可以使用位于衬底表面上的板来实现裂开。该板用于在裂开期间约束膜的运动，并且与局部热处理一起减少了在裂开过程中产生的剪切。根据其他实施例，KII组件有目的地保持在高水平并且用于引导和驱动通过劈裂序列的裂缝传播。在一个实施方案中，高KII组分通过暴露于电子束辐射的硅的绝热加热来实现，其给予高度突然的热梯度并且在硅中精确限定的深度产生应力。

7. 发明授权

US07598153B2 Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species 有权
标题翻译：使用热处理制造键合衬底结构以除去氧物质的方法和结构
公开(公告)号：US07598153B2
公开(公告)日：2009-10-06
申请号：US11394597
申请日：2006-03-31
申请人： Francois J. Henley , James Andrew Sullivan , Sien Giok Kang , Philip James Ong , Harry Robert Kirk , David Jacy , Igor Malik
发明人： Francois J. Henley , James Andrew Sullivan , Sien Giok Kang , Philip James Ong , Harry Robert Kirk , David Jacy , Igor Malik
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic. In a specific embodiment, the second characteristic is free from the silicon oxide material and is an epitaxially formed silicon material provided between the thickness of single crystal silicon material and the second silicon substrate. The method includes maintaining the interface region free of multiple voids during the thermal process to form the epitaxially formed silicon material to electrically couple the thickness of single crystal silicon material to the second silicon substrate.
摘要翻译：一种制造键合衬底结构的方法，例如硅上的硅。在具体实施例中，该方法包括提供从耦合到第二硅衬底的第一硅衬底转移的单晶硅材料的厚度。在具体实施例中，第二硅衬底具有第二表面区域，该第二表面区域从单晶硅材料的厚度连接到第一表面区域，以形成具有第一特征的界面区域，该第一特征包括单一厚度的氧化硅材料晶体硅材料和第二硅衬底。该方法包括使界面区域进行热处理以使接口区域从第一特性改变到第二特性。在具体实施方案中，第二特性不含氧化硅材料，并且是设置在单晶硅材料的厚度与第二硅衬底之间的外延形成的硅材料。该方法包括在热处理期间保持界面区域没有多个空隙以形成外延形成的硅材料，以将单晶硅材料的厚度电耦合到第二硅衬底。

8. 发明授权

US07595499B2 Method and system for fabricating strained layers for the manufacture of integrated circuits 失效
标题翻译：用于制造用于制造集成电路的应变层的方法和系统
公开(公告)号：US07595499B2
公开(公告)日：2009-09-29
申请号：US12070574
申请日：2008-02-19
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L29/06 , H01L31/072 , H01L31/0336 , H01L31/0328
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

9. 发明授权

US07410887B2 Controlled process and resulting device 有权
标题翻译：控制过程和结果设备
公开(公告)号：US07410887B2
公开(公告)日：2008-08-12
申请号：US11627920
申请日：2007-01-26
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12）高于所选深度。能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的部分供体基质。

10. 发明申请

US20080153220A1 Method for fabricating semiconductor devices using strained silicon bearing material 审中-公开
公开(公告)号：US20080153220A1
公开(公告)日：2008-06-26
申请号：US12070172
申请日：2008-02-15
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L21/336
CPC分类号： H01L29/045 , H01L29/78 , H01L29/7843 , H01L29/7848
摘要： A method of manufacturing an integrated circuit on semiconductor substrates. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. The semiconductor substrate has an overlying film of material with a second lattice with a second structure and a second spacing. Preferably, the second spacing placing the film of material in either a tensile or compressive mode across the entirety of the film of material relative to the semiconductor substrate with the first structure and the first spacing. The method includes processing the film of material to form a first region and a second region within the film of material. The first region and the second region are characterized by either the tensile or compressive mode. Preferably, both the first and second regions in their entirety are characterized by either the tensile or compressive mode. The method includes processing the first region of the film of material while maintaining the second region characterized by either the tensile or the compressive mode to form an opposite characteristic from the second region. The opposite characteristic is a tensile mode if the second region is in the compressive mode and the opposite characteristic is the compressive mode if the second region is in the tensile mode.

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