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1. 发明授权

US08871619B2 Application specific implant system and method for use in solar cell fabrications 有权
标题翻译：应用特定的植入系统和用于太阳能电池制造的方法
公开(公告)号：US08871619B2
公开(公告)日：2014-10-28
申请号：US12482947
申请日：2009-06-11
申请人： Babak Adibi , Edward S. Murrer
发明人： Babak Adibi , Edward S. Murrer
IPC分类号： H01L21/265 , H01L21/266 , H01L21/425 , H01L21/426 , H01L31/08 , H01L31/10 , H01L31/18 , H01L31/072 , H01L31/0224
CPC分类号： H01L21/266 , H01L21/26513 , H01L31/022425 , H01L31/072 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells and other semiconductor devices are fabricated more efficiently and for less cost using an implanted doping fabrication system. A system for implanting a semiconductor substrate includes an ion source (such as a single-species delivery module), an accelerator to generate from the ion source an ion beam having an energy of no more than 150 kV, and a beam director to expose the substrate to the beam. In one embodiment, the ion source is single-species delivery module that includes a single-gas delivery element and a single-ion source. Alternatively, the ion source is a plasma source used to generate a plasma beam. The system is used to fabricate solar cells having lightly doped photo-receptive regions and more highly doped grid lines. This structure reduces the formation of “dead layers” and improves the contact resistance, thereby increasing the efficiency of a solar cell.
摘要翻译：使用植入式掺杂制造系统，更有效地制造太阳能电池和其它半导体器件并且以较低成本制造。用于植入半导体衬底的系统包括离子源（例如单一物质传递模块），从离子源产生具有不超过150kV的能量的离子束的加速器和用于暴露衬底到梁。在一个实施方案中，离子源是单物质输送模块，其包括单气体输送元件和单离子源。或者，离子源是用于产生等离子体束的等离子体源。该系统用于制造具有轻掺杂的光接收区域和更高掺杂的栅格线的太阳能电池。该结构减少了“死层”的形成，提高了接触电阻，提高了太阳能电池的效率。

2. 发明授权

US08124499B2 Method and structure for thick layer transfer using a linear accelerator 有权
标题翻译：使用线性加速器进行厚层转移的方法和结构
公开(公告)号：US08124499B2
公开(公告)日：2012-02-28
申请号：US11935197
申请日：2007-11-05
申请人： Francois J. Henley , Albert Lamm , Babak Adibi
发明人： Francois J. Henley , Albert Lamm , Babak Adibi
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/3221
摘要： Free standing thickness of materials are fabricated using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. A semiconductor substrate is provided having a surface region and a thickness. The surface region of the semiconductor substrate is subjected to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. The surface region of the semiconductor substrate is subjected to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level.
摘要翻译：使用一个或多个半导体衬底（例如单晶硅，多晶硅，硅锗，锗，III / IV族材料等）制造材料的独立的厚度。提供具有表面区域和厚度的半导体衬底。半导体衬底的表面区域经受使用线性加速器产生的第一组多个高能粒子，以在裂开区域内形成多个吸杂位点的区域，该裂开区域设置在该表面区域的下方以限定厚度的待分离材料，半导体衬底保持在第一温度。半导体衬底的表面区域受到使用线性加速器产生的第二多个高能粒子，第二多个高能粒子被设置成将劈裂区域的应力水平从第一应力水平增加到第二应力水平。

3. 发明申请

US20110192993A1 ADJUSTABLE SHADOW MASK ASSEMBLY FOR USE IN SOLAR CELL FABRICATIONS 审中-公开
标题翻译：用于太阳能电池制造的可调节阴影掩模组件
公开(公告)号：US20110192993A1
公开(公告)日：2011-08-11
申请号：US13024251
申请日：2011-02-09
申请人： Moon Chun , Babak Adibi
发明人： Moon Chun , Babak Adibi
IPC分类号： G21K5/00
CPC分类号： H01J37/3171 , G03F1/20 , H01J2237/31711 , H01L21/266
摘要： An adjustable shadow mask implantation system comprising: an ion source configured to provide ions; and an shadow mask assembly configured to selectively allow ions from the ion source to pass therethrough to a substrate where they are implanted, wherein the shadow mask assembly is configured to adjust between a first position and a second position, wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines absent any lines with an intersecting orientation with respect to the multiple substantially parallel lines when set in the first position, and wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines and a line with an intersecting orientation with respect to the multiple substantially parallel lines when set in the second position.
摘要翻译：一种可调节荫罩植入系统，包括：离子源，被配置为提供离子; 以及荫罩组件，其被配置为选择性地允许来自所述离子源的离子通过所述阴影掩模组合件到达其被植入的衬底，其中所述荫罩组件被配置为在第一位置和第二位置之间进行调节，其中所述荫罩组件使得离子植入多个基本上平行的线，当设置在第一位置时，不存在相对于多个基本上平行的线具有相交取向的任何线，并且其中荫罩组件能够离子注入多个基本上平行的线和具有相交取向的线，当设置在第二位置时相对于多个基本平行的线。

4. 发明申请

US20090308440A1 FORMATION OF SOLAR CELL-SELECTIVE EMITTER USING IMPLANT AND ANNEAL METHOD 审中-公开
标题翻译：使用植入物和天然方法形成太阳能细胞选择性发射体
公开(公告)号：US20090308440A1
公开(公告)日：2009-12-17
申请号：US12483017
申请日：2009-06-11
申请人： Babak Adibi , Edward S. Murrer
发明人： Babak Adibi , Edward S. Murrer
IPC分类号： H01L31/00 , H01L31/0352 , H01L21/24 , H01L21/22
CPC分类号： H01L21/266 , H01L21/26506 , H01L21/26513 , H01L21/2658 , H01L31/022425 , H01L31/072 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a solar cell, the method comprising: providing a semiconducting wafer having a pre-doped region; performing a first ion implantation of a dopant into the semiconducting wafer to form a first doped region over the pre-doped region, wherein the first ion implantation has a concentration-versus-depth profile; and performing a second ion implantation of a dopant into the semiconducting wafer to form a second doped region over the pre-doped region, wherein the second ion implantation has a concentration-versus-depth profile different from that of the first ion implantation, wherein at least one of the first doped region and the second doped region is configured to generate electron-hole pairs upon receiving light, and wherein the first and second ion implantations are performed independently of one another.
摘要翻译：一种形成太阳能电池的方法，所述方法包括：提供具有预掺杂区域的半导体晶片; 将掺杂剂的第一离子注入到所述半导体晶片中以在所述预掺杂区域上形成第一掺杂区域，其中所述第一离子注入具有浓度对深度分布; 以及将掺杂剂的第二离子注入到所述半导体晶片中以在所述预掺杂区域上形成第二掺杂区域，其中所述第二离子注入具有与所述第一离子注入不同的浓度对深度分布，其中在第一掺杂区域和第二掺杂区域中的至少一个被配置为在接收光时产生电子 - 空穴对，并且其中第一和第二离子注入彼此独立地进行。

5. 发明申请

US20090309039A1 APPLICATION SPECIFIC IMPLANT SYSTEM AND METHOD FOR USE IN SOLAR CELL FABRICATIONS 有权
标题翻译：应用特定的植入系统和用于太阳能电池的方法
公开(公告)号：US20090309039A1
公开(公告)日：2009-12-17
申请号：US12482947
申请日：2009-06-11
申请人： Babak Adibi , Edward S. Murrer
发明人： Babak Adibi , Edward S. Murrer
IPC分类号： H01J3/14 , H01J37/08 , H01L31/18 , H01L21/265
CPC分类号： H01L21/266 , H01L21/26513 , H01L31/022425 , H01L31/072 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells and other semiconductor devices are fabricated more efficiently and for less cost using an implanted doping fabrication system. A system for implanting a semiconductor substrate includes an ion source (such as a single-species delivery module), an accelerator to generate from the ion source an ion beam having an energy of no more than 150 kV, and a beam director to expose the substrate to the beam. In one embodiment, the ion source is single-species delivery module that includes a single-gas delivery element and a single-ion source. Alternatively, the ion source is a plasma source used to generate a plasma beam. The system is used to fabricate solar cells having lightly doped photo-receptive regions and more highly doped grid lines. This structure reduces the formation of “dead layers” and improves the contact resistance, thereby increasing the efficiency of a solar cell.
摘要翻译：使用植入式掺杂制造系统，更有效地制造太阳能电池和其它半导体器件并且以较低成本制造。用于植入半导体衬底的系统包括离子源（例如单一物质传递模块），从离子源产生具有不超过150kV的能量的离子束的加速器和用于暴露衬底到梁。在一个实施方案中，离子源是单物质输送模块，其包括单气体输送元件和单离子源。或者，离子源是用于产生等离子体束的等离子体源。该系统用于制造具有轻掺杂的光接收区域和更高掺杂的栅格线的太阳能电池。该结构减少了“死层”的形成，提高了接触电阻，提高了太阳能电池的效率。

6. 发明申请

US20080128641A1 APPARATUS AND METHOD FOR INTRODUCING PARTICLES USING A RADIO FREQUENCY QUADRUPOLE LINEAR ACCELERATOR FOR SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：使用用于半导体材料的无线电频率四线性加速器引入颗粒的装置和方法
公开(公告)号：US20080128641A1
公开(公告)日：2008-06-05
申请号：US11936582
申请日：2007-11-07
申请人： Francois J. Henley , Albert Lamm , Babak Adibi
发明人： Francois J. Henley , Albert Lamm , Babak Adibi
IPC分类号： G21K5/10 , H05H9/00
CPC分类号： H01L21/26506 , H01J37/04 , H01J37/3171 , H01J2237/04737 , H01L21/2658 , H01L21/26593 , H05H7/04 , H05H7/10 , H05H9/00
摘要： A system for forming one or more detachable semiconductor films capable of being free-standing. The apparatus includes an ion source to generate a plurality of collimated charged particles at a first energy level. The system includes a linear accelerator having a plurality of modular radio frequency quadrupole (RFQ) elements numbered from 1 through N successively coupled to each other, where N is an integer greater than 1. The linear accelerator controls and accelerates the plurality of collimated charged particles at the first energy level into a beam of charge particles having a second energy level. RFQ element numbered 1 is operably coupled to the ion source. The system includes an exit aperture coupled to RFQ element numbered N of the RFQ linear accelerator. In a specific embodiment, the system includes a beam expander coupled to the exit aperture, the beam expander being configured to process the beam of charged particles at the second energy level into an expanded beam of charged particles. The system includes a process chamber coupled to the beam expander and a workpiece provided within the process chamber to be implanted
摘要翻译：一种用于形成能够独立的一个或多个可分离半导体膜的系统。该装置包括用于在第一能级产生多个准直带电粒子的离子源。该系统包括线性加速器，其具有从1到N编号的多个模块化射频四极杆（RFQ）元件，其连续地彼此耦合，其中N是大于1的整数。线性加速器控制和加速多个准直带电粒子在第一能级进入具有第二能级的电荷粒子束。编号为1的RFQ元件可操作地耦合到离子源。该系统包括耦合到RFQ线性加速器的编号为N的RFQ元件的出口孔。在一个具体实施例中，该系统包括耦合到出口孔的光束扩展器，该光束扩展器被配置成将处于第二能级的带电粒子束处理成扩展的带电粒子束。该系统包括耦合到光束扩展器的处理室和设置在待植入的处理室内的工件

7. 发明授权

US08697552B2 Method for ion implant using grid assembly 有权
标题翻译：使用栅格组装的离子注入方法
公开(公告)号：US08697552B2
公开(公告)日：2014-04-15
申请号：US13363347
申请日：2012-01-31
申请人： Babak Adibi , Moon Chun
发明人： Babak Adibi , Moon Chun
IPC分类号： H01L21/223
CPC分类号： H01L31/1876 , C23C14/042 , C23C14/48 , H01J37/185 , H01J37/3171 , H01J37/32412 , H01J37/32422 , H01J2237/0437 , H01J2237/184 , H01J2237/201 , H01J2237/327 , H01J2237/3365 , H01L21/2236 , H01L31/068 , H01L31/0682 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions from the plasma in the plasma region through the apertures in the positively-biased first grid plate; flowing at least a portion of the ions that flowed through the apertures in the positively-biased first grid plate through the apertures in the negatively-biased second grid plate; and implanting a substrate with at least a portion of the ions that flowed through the apertures in the negatively-biased second grid plate.
摘要翻译：一种离子注入的方法，包括：在室的等离子体区域内提供等离子体; 使第一格栅板向正偏置，其中第一格栅板包括多个孔; 负偏置第二格栅板，其中所述第二格板包括多个孔; 使来自等离子体区域中的等离子体的离子通过正偏置的第一格栅板中的孔流动; 使流经所述正偏置的第一格栅板中的孔的至少一部分离子流过负偏压的第二格栅板中的孔; 以及用至少一部分离子注入衬底，所述离子流过所述负偏压的第二栅格板中的所述孔。

8. 发明申请

US20110162703A1 ADVANCED HIGH EFFICIENTCY CRYSTALLINE SOLAR CELL FABRICATION METHOD 审中-公开
标题翻译：高效高效晶体太阳能电池制造方法
公开(公告)号：US20110162703A1
公开(公告)日：2011-07-07
申请号：US12728105
申请日：2010-03-19
申请人： Babak Adibi , Edward S. Murrer , Henry Hieslmair
发明人： Babak Adibi , Edward S. Murrer , Henry Hieslmair
IPC分类号： H01L31/0216 , H01L31/0232 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , H01L21/26513 , H01L31/022433 , H01L31/022441 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell comprising: providing a semiconducting wafer having a front surface, a back surface, and a background doped region; performing a set of ion implantations of dopant into the semiconducting wafer to form a back alternatingly-doped region extending from the back surface of the semiconducting wafer to a location between the back surface and the front surface, wherein the back doped region comprises laterally alternating first back doped regions and second back doped regions, and wherein the first back doped regions comprise a different charge type than the second back doped regions and the background doped region; and disposing a back metal contact layer onto the back surface of the semiconducting wafer, wherein the back metal contact layer is aligned over the first and second back doped regions and is configured to conduct electrical charge from the first and second back doped regions.
摘要翻译：一种制造太阳能电池的方法，包括：提供具有前表面，后表面和背景掺杂区域的半导体晶片; 执行一组掺杂剂的离子注入到所述半导体晶片中以形成从所述半导体晶片的所述背表面延伸到所述后表面和所述前表面之间的位置的后交替掺杂区域，其中所述反向掺杂区域包括横向交替的第一背掺杂区和第二反掺杂区，并且其中第一反掺杂区包括不同于第二反掺杂区和背景掺杂区的电荷类型; 以及将背金属接触层设置在所述半导体晶片的背表面上，其中所述背金属接触层在所述第一和第二后掺杂区域上对准，并且被配置为从所述第一和第二反向掺杂区域导电电荷。

9. 发明授权

US06200883B1 Ion implantation method 失效
标题翻译：离子注入法
公开(公告)号：US06200883B1
公开(公告)日：2001-03-13
申请号：US08876593
申请日：1997-06-16
申请人： Mitchell C. Taylor , Babak Adibi , Majeed Ali Foad
发明人： Mitchell C. Taylor , Babak Adibi , Majeed Ali Foad
IPC分类号： H01L21265
CPC分类号： H01L21/26513 , C23C14/48 , H01L21/26566 , H01L21/2658
摘要： In ion implantation processes for forming junctions in semiconductor devices, a proportion of ions implant into the semiconductor material beyond the desired junction depth due to channelling along axes and planes of symmetry in the crystal. A method is provided in which ions are implanted at a series of different energies starting with a lower energy than that required for the desired junction depth. The initial amorphising of the surface regions of the semiconductor during the lower energy implantation reduces the channelling probability when the ions are subsequently implanted at the full energy resulting in a more sharply defined junction.
摘要翻译：在用于在半导体器件中形成结的离子注入工艺中，由于沿着晶体中的轴和对称平面的沟道，一部分离子注入半导体材料超过所需的结深度。提供了一种方法，其中以比所需结深度所需的能量低的能量开始以一系列不同的能量注入离子。在较低能量注入期间，半导体的表面区域的初始非晶化降低了当离子随后以全能量注入时产生更清晰界定的结的沟道概率。

10. 发明授权

US6093625A Apparatus for and methods of implanting desired chemical species in semiconductor substrates 失效
标题翻译：在半导体衬底中植入所需化学物质的装置和方法
公开(公告)号：US6093625A
公开(公告)日：2000-07-25
申请号：US81517
申请日：1998-05-20
申请人： Dennis W. Wagner , Michael T. Wauk, II , Matthew D. Scotney Castle , Babak Adibi
发明人： Dennis W. Wagner , Michael T. Wauk, II , Matthew D. Scotney Castle , Babak Adibi
IPC分类号： H01J37/317 , H01L21/265 , H01L21/425
CPC分类号： H01J37/3171 , H01J2237/006 , H01J2237/022
摘要： An apparatus and method for implanting a desired chemical species in a semiconductor substrate. The apparatus comprises a target chamber, a holder to hold a substrate in the target chamber for implantation, a pump to pump the target chamber down to a desired pressure, a pressure lock to enable a substrate to be passed into the target chamber for loading on the holder while the target chamber is at sub-atmospheric pressure, an ion beam generator for generating and directing a beam of ions containing said desired species at a surface of a substrate on said holder, and a reactive gas supply to feed a reactive gas into the target chamber while the chamber is maintained by the pump at the desired pressure, to provide a desired partial pressure of the reactive gas in the target chamber to reactive with and volatilise unwanted contaminants on surfaces in the target chamber.
摘要翻译：一种用于在半导体衬底中植入所需化学物质的装置和方法。该装置包括目标室，用于将基板保持在用于注入的目标室中的保持器，用于将目标室泵送到期望压力的泵，压力锁定以使得基板能够进入目标室以装载所述保持器在所述目标室处于次大气压下时，用于在所述保持器上的衬底的表面处产生并引导包含所述物质的离子束的离子束发生器，以及用于将反应性气体供给到反应气体中目标腔室，同时腔室由泵以期望的压力保持，以提供目标腔室中的反应性气体的期望的分压，以与靶室中的表面反应并挥发不需要的污染物。

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