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1. 发明授权

US07595499B2 Method and system for fabricating strained layers for the manufacture of integrated circuits 失效
标题翻译：用于制造用于制造集成电路的应变层的方法和系统
公开(公告)号：US07595499B2
公开(公告)日：2009-09-29
申请号：US12070574
申请日：2008-02-19
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L29/06 , H01L31/072 , H01L31/0336 , H01L31/0328
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

2. 发明授权

US07391047B2 System for forming a strained layer of semiconductor material 有权
标题翻译：用于形成半导体材料的应变层的系统
公开(公告)号：US07391047B2
公开(公告)日：2008-06-24
申请号：US11378126
申请日：2006-03-17
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L29/06 , H01L31/072 , H01L31/0336 , H01L31/0328
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

3. 发明授权

US07094666B2 Method and system for fabricating strained layers for the manufacture of integrated circuits 有权
公开(公告)号：US07094666B2
公开(公告)日：2006-08-22
申请号：US11043477
申请日：2005-01-24
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

4. 发明申请

US20080141510A1 Method and system for fabricating strained layers for the manufacture of integrated circuits 失效
标题翻译：用于制造用于制造集成电路的应变层的方法和系统
公开(公告)号：US20080141510A1
公开(公告)日：2008-06-19
申请号：US12070574
申请日：2008-02-19
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik , Harry R. Kirk
IPC分类号： H01L21/67
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

5. 发明授权

US07390724B2 Method and system for lattice space engineering 有权
标题翻译：格子空间工程方法与系统
公开(公告)号：US07390724B2
公开(公告)日：2008-06-24
申请号：US11104298
申请日：2005-04-11
申请人： Francois J. Henley , Philip James Ong , Igor J. Malik
发明人： Francois J. Henley , Philip James Ong , Igor J. Malik
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/76251
摘要： A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.
摘要翻译：一种用于制造多层基片的系统。该系统具有支撑构件，适于处理包括从第一状态到第二状态的第一侧和第二侧的材料膜。支撑构件附接到材料膜的第一侧。第二种状态包括压力状态。该系统具有手柄基板，该基板包括面，该表面适于附接到材料膜的第二侧。支撑构件能够从材料膜的第一侧分离，从而使包括处于第二状态的材料膜的手柄基板附接到手柄基板的表面。

6. 发明授权

US07479441B2 Method and apparatus for flag-less water bonding tool 有权
标题翻译：无标签水粘合工具的方法和装置
公开(公告)号：US07479441B2
公开(公告)日：2009-01-20
申请号：US11581065
申请日：2006-10-13
申请人： Harry R. Kirk , Francois J. Henley , Philip James Ong
发明人： Harry R. Kirk , Francois J. Henley , Philip James Ong
IPC分类号： H01L21/30
CPC分类号： H01L21/67092 , H01L21/187 , H01L21/2007
摘要： Embodiments in accordance with the present invention relate to methods and apparatuses for bonding together substrates in a manner that suppresses the formation of voids between them. In a specific embodiment, a backside of each substrate is adhered to a front area of flexible, porous chuck having a rear area in pneumatic communication with a vacuum. Application of the vacuum causes the chuck and the associated substrate to slightly bend. Owing to this bending, physical contact between local portions on the front side of the flexed substrates may be initiated, while maintaining other portions on front side of the substrates substantially free from contact with each other. A bond wave is formed and maintained at a determined velocity to form a continuous interface joining the front sides of the substrates, without formation of voids therebetween. In one embodiment, the chucks may comprise porous polyethylene sealed with polyimide except for a portion of the front configured to be in contact with the substrate, and a portion of the backside configured to be in communication with a vacuum source.
摘要翻译：根据本发明的实施例涉及以抑制它们之间的空隙形成的方式将基板结合在一起的方法和装置。在具体实施例中，每个基板的背面粘附到具有与真空气动连通的后部区域的柔性多孔卡盘的前部区域。真空的应用导致卡盘和相关联的基底稍微弯曲。由于这种弯曲，可以启动弯曲基板的前侧上的局部部分之间的物理接触，同时保持基板的正面上的其他部分基本上不彼此接触。键合波形成并保持在确定的速度以形成连接基片的前侧的连续界面，而不在其间形成空隙。在一个实施例中，卡盘可以包括用聚酰亚胺密封的多孔聚乙烯，除了配置为与基板接触的前部的一部分，并且背面的一部分被配置为与真空源连通。

7. 发明授权

US08012851B2 Method and structure for fabricating solar cells 有权
标题翻译：制造太阳能电池的方法和结构
公开(公告)号：US08012851B2
公开(公告)日：2011-09-06
申请号：US12731069
申请日：2010-03-24
申请人： Francois J. Henley , Philip James Ong
发明人： Francois J. Henley , Philip James Ong
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L31/1804 , H01L31/0232 , H01L31/0392 , H01L31/03925 , H01L31/0725 , H01L31/0745 , H01L31/077 , H01L31/1872 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.
摘要翻译：光伏电池装置，例如太阳能电池，太阳能电池板和制造方法。该装置具有包括第一表面和第二表面的光学透明基底。包括具有第一表面区域和第二表面区域的材料的第一厚度（例如，半导体材料，单晶材料）。在优选实施例中，表面区域覆盖在光学透明基板的第一表面上。该装置具有设置在材料厚度的第一表面区域和光学透明材料的第一表面之间的光学耦合材料。半导体材料的第二厚度覆盖在第二表面区域上以形成半导体材料的所得厚度。

8. 发明授权

US07598153B2 Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species 有权
标题翻译：使用热处理制造键合衬底结构以除去氧物质的方法和结构
公开(公告)号：US07598153B2
公开(公告)日：2009-10-06
申请号：US11394597
申请日：2006-03-31
申请人： Francois J. Henley , James Andrew Sullivan , Sien Giok Kang , Philip James Ong , Harry Robert Kirk , David Jacy , Igor Malik
发明人： Francois J. Henley , James Andrew Sullivan , Sien Giok Kang , Philip James Ong , Harry Robert Kirk , David Jacy , Igor Malik
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic. In a specific embodiment, the second characteristic is free from the silicon oxide material and is an epitaxially formed silicon material provided between the thickness of single crystal silicon material and the second silicon substrate. The method includes maintaining the interface region free of multiple voids during the thermal process to form the epitaxially formed silicon material to electrically couple the thickness of single crystal silicon material to the second silicon substrate.
摘要翻译：一种制造键合衬底结构的方法，例如硅上的硅。在具体实施例中，该方法包括提供从耦合到第二硅衬底的第一硅衬底转移的单晶硅材料的厚度。在具体实施例中，第二硅衬底具有第二表面区域，该第二表面区域从单晶硅材料的厚度连接到第一表面区域，以形成具有第一特征的界面区域，该第一特征包括单一厚度的氧化硅材料晶体硅材料和第二硅衬底。该方法包括使界面区域进行热处理以使接口区域从第一特性改变到第二特性。在具体实施方案中，第二特性不含氧化硅材料，并且是设置在单晶硅材料的厚度与第二硅衬底之间的外延形成的硅材料。该方法包括在热处理期间保持界面区域没有多个空隙以形成外延形成的硅材料，以将单晶硅材料的厚度电耦合到第二硅衬底。

9. 发明申请

US20100180945A1 Method and Structure for Fabricating Solar Cells 有权
标题翻译：制造太阳能电池的方法和结构
公开(公告)号：US20100180945A1
公开(公告)日：2010-07-22
申请号：US12731069
申请日：2010-03-24
申请人： Francois J. Henley , Philip James Ong
发明人： Francois J. Henley , Philip James Ong
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/0232 , H01L31/0392 , H01L31/03925 , H01L31/0725 , H01L31/0745 , H01L31/077 , H01L31/1872 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.
摘要翻译：光伏电池装置，例如太阳能电池，太阳能电池板和制造方法。该装置具有包括第一表面和第二表面的光学透明基底。包括具有第一表面区域和第二表面区域的材料的第一厚度（例如，半导体材料，单晶材料）。在优选实施例中，表面区域覆盖在光学透明基板的第一表面上。该装置具有设置在材料厚度的第一表面区域和光学透明材料的第一表面之间的光学耦合材料。半导体材料的第二厚度覆盖在第二表面区域上以形成半导体材料的所得厚度。

10. 发明授权

US07863157B2 Method and structure for fabricating solar cells using a layer transfer process 有权
标题翻译：使用层转移工艺制造太阳能电池的方法和结构
公开(公告)号：US07863157B2
公开(公告)日：2011-01-04
申请号：US11685686
申请日：2007-03-13
申请人： Francois J. Henley , Philip James Ong
发明人： Francois J. Henley , Philip James Ong
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L31/1804 , H01L31/0232 , H01L31/0392 , H01L31/03925 , H01L31/0725 , H01L31/0745 , H01L31/077 , H01L31/1872 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.
摘要翻译：光伏电池装置，例如太阳能电池，太阳能电池板和制造方法。该装置具有包括第一表面和第二表面的光学透明基底。包括具有第一表面区域和第二表面区域的材料的第一厚度（例如，半导体材料，单晶材料）。在优选实施例中，表面区域覆盖在光学透明基板的第一表面上。该装置具有设置在材料厚度的第一表面区域和光学透明材料的第一表面之间的光学耦合材料。半导体材料的第二厚度覆盖在第二表面区域上以形成半导体材料的所得厚度。

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