专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080000495A1 APPARATUS AND METHOD FOR SINGLE SUBSTRATE PROCESSING 审中-公开
标题翻译：单基板加工的装置和方法
公开(公告)号：US20080000495A1
公开(公告)日：2008-01-03
申请号：US11460172
申请日：2006-07-26
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Wyland Atkins , Yongqiang Lu
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Wyland Atkins , Yongqiang Lu
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , B08B3/048 , H01L21/67028 , H01L21/67057 , H01L21/67086 , H01L21/67253 , H01L21/67751 , H01L21/68707
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

2. 发明申请

US20070272657A1 APPARATUS AND METHOD FOR SINGLE SUBSTRATE PROCESSING 审中-公开
标题翻译：单基板加工的装置和方法
公开(公告)号：US20070272657A1
公开(公告)日：2007-11-29
申请号：US11460171
申请日：2006-07-26
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Yongqiang Lu
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Yongqiang Lu
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , B08B3/048 , H01L21/67028 , H01L21/67086 , H01L21/67253 , H01L21/67751 , H01L21/68707
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

3. 发明授权

US08673641B2 On-line detection method of chromium-free coating film thickness on surface of strip steel 有权
标题翻译：带钢无铬涂层厚度在线检测方法
公开(公告)号：US08673641B2
公开(公告)日：2014-03-18
申请号：US13529863
申请日：2012-06-21
申请人： Yongqiang Lu , Chunguo Lv , Zhicheng Wang
发明人： Yongqiang Lu , Chunguo Lv , Zhicheng Wang
IPC分类号： G01B21/08
CPC分类号： G01B15/02 , G01B1/00 , G01N23/00
摘要： A measuring method of chromium-free coating film thickness on surface of strip steel comprising selecting two water-soluble chemical substances containing elements P, Ca, Ti, Ba or Sr and not reacting with a chromium-free coating liquid; adding the chemical substances into the chromium-free coating liquid and agitating them to be homogeneous, thereafter, fabricating a reference sample of coating film; using a ray emitted by an off-line film thickness instrument to excite the two water-soluble chemical substances so as to obtain characteristic spectrums to obtain a correction function expression between the measured film thickness and the thickness correction value by fitting; adding the water-soluble chemical substance which has a weak characteristic spectrum into a chromium-free coating liquid, and using the expression to obtain the actual coating film thickness. The method is capable to monitor film thickness with no adverse effect on adhesiveness and corrosion-proof of the coating film.
摘要翻译：选择两种含有元素P，Ca，Ti，Ba或Sr的水溶性化学物质，不与无铬涂层液反应的无铬涂膜厚度测定方法; 将化学物质添加到无铬涂层液中并搅拌均匀，然后制造涂膜参考样品; 使用离线膜厚仪器发射的射线激发两种水溶性化学物质，以获得特征谱，通过拟合获得测量的膜厚度和厚度校正值之间的校正函数表达式; 将具有弱特征谱的水溶性化学物质加入到无铬涂布液中，并使用表达式获得实际涂膜厚度。该方法能够监测膜厚度，对涂膜的粘合性和耐腐蚀性没有不利影响。

4. 发明申请

US20090187876A1 STEINER TREE BASED APPROACH FOR POLYGON FRACTURING 有权
标题翻译：基于STENER TREE的多边形破碎方法
公开(公告)号：US20090187876A1
公开(公告)日：2009-07-23
申请号：US12017025
申请日：2008-01-19
申请人： Qing Su , Yongqiang Lu , Charles C. Chiang
发明人： Qing Su , Yongqiang Lu , Charles C. Chiang
IPC分类号： G06F17/50
CPC分类号： G03F1/68
摘要： Roughly described, a method for mask data preparation is described, for use with a preliminary mask layout that includes a starting polygon, the vertices of the starting polygon including I-points (vertices of the starting polygon having an interior angle greater than 90 degrees), including steps of developing a rectilinear partition tree on at least the I-points of the starting polygon, and using the edges of the partition tree to define the partition of the starting polygon into sub-polygons for mask writing.
摘要翻译：粗略地描述了一种用于掩模数据准备的方法，用于包括起始多边形的初步掩模布局，起始多边形的顶点包括I点（具有大于90度的内角的起始多边形的顶点）包括在至少起始多边形的I点上开发直线分区树的步骤，以及使用分区树的边将起始多边形的分区定义为用于掩码写入的子多边形。

5. 发明授权

US06361407B1 Method of polishing a semiconductor wafer 失效
标题翻译：抛光半导体晶片的方法
公开(公告)号：US06361407B1
公开(公告)日：2002-03-26
申请号：US09631089
申请日：2000-08-02
申请人： Yongqiang Lu , Kenneth Frank , Kevin Edwards
发明人： Yongqiang Lu , Kenneth Frank , Kevin Edwards
IPC分类号： B24B100
CPC分类号： H01L21/02024 , C11D11/0047 , C11D17/049
摘要： A modified process for chemical/mechanical polishing semiconductor wafers is provided. The process includes polishing a surface of the wafer, contacting the polished surface of the wafer with a surfactant, and drying the surface of the disengaged wafer for a sufficient period of time before contacting the surface of the wafer with a rinse media or subsequent process liquid. The process reduces defects, including etching stains, on the polished surface of the wafer.
摘要翻译：提供了一种用于化学/机械抛光半导体晶片的改进方法。该方法包括抛光晶片的表面，使晶片的抛光表面与表面活性剂接触，并且在将晶片表面与冲洗介质或随后的处理液体接触之前将足够的时间段干燥脱离的晶片的表面。该工艺在晶片的抛光表面上减少缺陷，包括蚀刻污渍。

6. 发明授权

US09406416B2 Method of producing extremely thick insulation coating on surface of electrical steel 有权
标题翻译：在电工钢表面生产极厚绝缘涂层的方法
公开(公告)号：US09406416B2
公开(公告)日：2016-08-02
申请号：US14348357
申请日：2011-12-14
申请人： Yongqiang Lu , Chunguo Lv , Zhicheng Wang , Bin Chen , Xiao Chen , Shishu Xie
发明人： Yongqiang Lu , Chunguo Lv , Zhicheng Wang , Bin Chen , Xiao Chen , Shishu Xie
IPC分类号： H01B13/06 , B05C9/04 , H01B13/00 , B05D1/28 , C09D5/08 , B05D7/14 , H01F1/18 , B05D3/02 , B05D3/04
CPC分类号： H01B13/06 , B05C9/04 , B05D1/28 , B05D3/0272 , B05D3/0413 , B05D7/14 , B05D2202/10 , B05D2252/10 , C09D5/08 , C09D5/084 , H01B13/0016 , H01F1/18
摘要： A method of producing an extremely thick insulation coating on a surface of an electrical steel, comprises the following steps: 1) preparing a coating liquid—stirring sufficiently the coating liquid for 0.1˜4 hours, with the viscosity of the coating liquid being within 10˜80 S; 2) coating a strip steel—using a double-roller or a tri-roller coating machine, wherein the film thickness and evenness can be controlled by adjusting different parameters; 3) baking the coating—using three sections, that is, a drying section, a baking section and a cooling section, to bake the coating, wherein the temperature in the drying section is 100˜400° C., the temperature in the baking section is 200˜370° C.; the time in the whole drying and solidification section is 33˜144 seconds, wherein the time in the drying section is 9˜39 seconds, and the baking time is 24˜105 seconds; wherein in the baking process, the strip steel having been coated is conveyed in a non-contact way, in particular, the strip steel is conveyed by blowing pressure-adjustable air onto the lower surface to make it float; the air pressure is 0˜2000 Pa; the wet film is kept out of contact with the furnace rollers before it is solidified, guaranteeing that the surface of wet film is intact; 4) online detecting the film thickness.
摘要翻译：一种在电工钢表面制造极厚绝缘涂层的方法，包括以下步骤：1）将涂布液充分搅拌0.1〜4小时，涂布液的粘度在10以下〜80 S; 2）使用双辊或三辊涂布机涂覆钢带钢，其中膜厚度和均匀度可以通过调节不同的参数来控制; 3）烘烤涂覆使用的三个部分，即干燥部分，烘烤部分和冷却部分，以烘烤涂层，其中干燥部分的温度为100〜400℃，烘烤温度截面为200〜370℃。整个干燥固化段的时间为33〜144秒，干燥段的时间为9〜39秒，烘烤时间为24〜105秒; 其特征在于，在烘烤工序中，以非接触的方式输送已经被涂布的带状钢，特别是通过将压力可调节的空气吹到下表面上而使其浮起来输送带状钢; 气压0〜2000Pa; 湿膜在凝固之前与炉辊保持脱离接触，保证湿膜的表面完整无损; 4）在线检测薄膜厚度。

7. 发明申请

US20150064343A1 METHOD OF PRODUCING EXTREMELY THICK INSULATION COATING ON SURFACE OF ELECTRICAL STEEL 有权
标题翻译：在电工钢表面生产超细厚度绝缘涂层的方法
公开(公告)号：US20150064343A1
公开(公告)日：2015-03-05
申请号：US14348357
申请日：2011-12-14
申请人： Yongqiang Lu , Chunguo Lv , Zhicheng Wang , Bin Chen , Xiao Chen , Shishu Xie
发明人： Yongqiang Lu , Chunguo Lv , Zhicheng Wang , Bin Chen , Xiao Chen , Shishu Xie
IPC分类号： H01B13/06 , H01B13/00
CPC分类号： H01B13/06 , B05C9/04 , B05D1/28 , B05D3/0272 , B05D3/0413 , B05D7/14 , B05D2202/10 , B05D2252/10 , C09D5/08 , C09D5/084 , H01B13/0016 , H01F1/18
摘要： A method of producing an extremely thick insulation coating on a surface of an electrical steel, comprises the following steps: 1) preparing a coating liquid—stirring sufficiently the coating liquid for 0.1˜4 hours, with the viscosity of the coating liquid being within 10˜80 S; 2) coating a strip steel—using a double-roller or a tri-roller coating machine, wherein the film thickness and evenness can be controlled by adjusting different parameters; 3) baking the coating—using three sections, that is, a drying section, a baking section and a cooling section, to bake the coating, wherein the temperature in the drying section is 100˜400° C., the temperature in the baking section is 200˜370° C.; the time in the whole drying and solidification section is 33˜144 seconds, wherein the time in the drying section is 9˜39 seconds, and the baking time is 24˜105 seconds; wherein in the baking process, the strip steel having been coated is conveyed in a non-contact way, in particular, the strip steel is conveyed by blowing pressure-adjustable air onto the lower surface to make it float; the air pressure is 0˜2000 Pa; the wet film is kept out of contact with the furnace rollers before it is solidified, guaranteeing that the surface of wet film is intact; 4) online detecting the film thickness.
摘要翻译：一种在电工钢表面制造极厚绝缘涂层的方法，包括以下步骤：1）将涂布液充分搅拌0.1〜4小时，涂布液的粘度在10以下〜80 S; 2）使用双辊或三辊涂布机涂覆钢带钢，其中膜厚度和均匀度可以通过调节不同的参数来控制; 3）烘烤涂布使用的三个部分，即干燥部分，烘烤部分和冷却部分，以烘烤涂层，其中干燥部分中的温度为100〜400℃，烘烤温度截面为200〜370℃。整个干燥固化段的时间为33〜144秒，干燥段的时间为9〜39秒，烘烤时间为24〜105秒; 其特征在于，在烘烤工序中，以非接触的方式输送已经被涂布的带状钢，特别是通过将压力可调节的空气吹到下表面上而使其浮起来输送带状钢; 气压0〜2000Pa; 湿膜在凝固之前与炉辊保持脱离接触，保证湿膜的表面完整无损; 4）在线检测薄膜厚度。

8. 发明授权

US08151236B2 Steiner tree based approach for polygon fracturing 有权
$Steiner tree based approach for polygon fracturing$
标题翻译：基于Steiner树的多边形压裂方法
公开(公告)号：US08151236B2
公开(公告)日：2012-04-03
申请号：US12017025
申请日：2008-01-19
申请人： Qing Su , Yongqiang Lu , Charles C. Chiang
发明人： Qing Su , Yongqiang Lu , Charles C. Chiang
IPC分类号： G06F19/50
CPC分类号： G03F1/68
摘要： Roughly described, a method for mask data preparation is described, for use with a preliminary mask layout that includes a starting polygon, the vertices of the starting polygon including I-points (vertices of the starting polygon having an interior angle greater than 90 degrees), including steps of developing a rectilinear partition tree on at least the I-points of the starting polygon, and using the edges of the partition tree to define the partition of the starting polygon into sub-polygons for mask writing.
摘要翻译：粗略地描述了一种用于掩模数据准备的方法，用于包括起始多边形的初步掩模布局，起始多边形的顶点包括I点（具有大于90度的内角的起始多边形的顶点）包括在至少起始多边形的I点上开发直线分区树的步骤，以及使用分区树的边将起始多边形的分区定义为用于掩码写入的子多边形。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式