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1. 发明申请

US20080000495A1 APPARATUS AND METHOD FOR SINGLE SUBSTRATE PROCESSING 审中-公开
标题翻译：单基板加工的装置和方法
公开(公告)号：US20080000495A1
公开(公告)日：2008-01-03
申请号：US11460172
申请日：2006-07-26
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Wyland Atkins , Yongqiang Lu
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Wyland Atkins , Yongqiang Lu
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , B08B3/048 , H01L21/67028 , H01L21/67057 , H01L21/67086 , H01L21/67253 , H01L21/67751 , H01L21/68707
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

2. 发明申请

US20070272657A1 APPARATUS AND METHOD FOR SINGLE SUBSTRATE PROCESSING 审中-公开
标题翻译：单基板加工的装置和方法
公开(公告)号：US20070272657A1
公开(公告)日：2007-11-29
申请号：US11460171
申请日：2006-07-26
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Yongqiang Lu
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Yongqiang Lu
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , B08B3/048 , H01L21/67028 , H01L21/67086 , H01L21/67253 , H01L21/67751 , H01L21/68707
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

3. 发明申请

US20060148267A1 Apparatus and method for single-or double-substrate processing 审中-公开
标题翻译：用于单面或双面基板加工的装置和方法
公开(公告)号：US20060148267A1
公开(公告)日：2006-07-06
申请号：US10492726
申请日：2002-12-06
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M Yalamanchili , John Rosato
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M Yalamanchili , John Rosato
IPC分类号： H01L21/306 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02052 , B08B3/048 , B08B3/12 , H01L21/67028 , H01L21/67034 , H01L21/67057 , H01L21/67751
摘要： In a method for treating semiconductor substrates, one or two substrates are positioned in a substrate process chamber and subjected to wet etching, cleaning, rinsing and/or drying steps. During cleaning or rinsing a band of megasonic energy is created within the process chamber to create an active rinse or cleaning zone, and the substrate(s) are translated through the active zone during a rinsing or cleaning process within the chamber.
摘要翻译：在处理半导体衬底的方法中，将一个或两个衬底放置在衬底处理室中，并进行湿蚀刻，清洗，漂洗和/或干燥步骤。在清洁或漂洗期间，在处理室内产生一系列兆声波能量，以产生主动冲洗或清洗区域，并且在室内的漂洗或清洁过程中将基底平移通过活性区。

4. 发明授权

US06726848B2 Apparatus and method for single substrate processing 失效
标题翻译：单基板加工的装置和方法
公开(公告)号：US06726848B2
公开(公告)日：2004-04-27
申请号：US10010240
申请日：2001-12-07
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M. Rao Yalamanchili , John Rosato
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M. Rao Yalamanchili , John Rosato
IPC分类号： H01L2100
CPC分类号： H01L21/02052 , B08B3/048 , B08B3/12 , H01L21/67028 , H01L21/67034 , H01L21/67057 , H01L21/67751
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

5. 发明申请

US20090029560A1 Apparatus and method for single substrate processing 审中-公开
标题翻译：单基板加工的装置和方法
公开(公告)号：US20090029560A1
公开(公告)日：2009-01-29
申请号：US11445707
申请日：2006-06-02
申请人： Eric Hansen , Victor Mimken , Martin Bleck , R. Rao Yalamanchili , John Rosato , Wyland L. Atkins
发明人： Eric Hansen , Victor Mimken , Martin Bleck , R. Rao Yalamanchili , John Rosato , Wyland L. Atkins
IPC分类号： H01L21/306 , B08B3/04
CPC分类号： H01L21/67028 , B08B3/02 , B08B3/048 , B08B3/12 , B08B2203/0288 , H01L21/02052 , H01L21/67057 , H01L21/67751 , H01L21/68707
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

6. 发明授权

US06245250B1 Process vessel 失效
标题翻译：加工容器
公开(公告)号：US06245250B1
公开(公告)日：2001-06-12
申请号：US09262991
申请日：1999-03-05
申请人： Tom Krawzak , Victor Mimken , Rod Fladwood , Wyland Atkins
发明人： Tom Krawzak , Victor Mimken , Rod Fladwood , Wyland Atkins
IPC分类号： C23G102
CPC分类号： H01L21/67253 , B08B3/048 , B08B3/12 , H01L21/67051 , H01L21/67057 , Y10S134/902
摘要： A process vessel which may be utilized in wet processing of semiconductor wafers includes a tank having one or more fluid displacers attachable to the tank. The one or more fluid displacer(s) have position in which they extend into the interior of the tank. The fluid displacers may be carried by a lid moveable into a closed position covering the opening in the tank. Movement of the lid into the closed position causes the fluid displacers to extend into the tank.
摘要翻译：可用于半导体晶片湿法处理的处理容器包括具有一个或多个可连接到罐的流体置换器的罐。一个或多个流体置换器具有它们延伸到罐的内部的位置。流体置换器可以由可移动到覆盖罐中的开口的关闭位置的盖子承载。盖子移动到关闭位置使得液体置换器延伸到罐中。

7. 发明授权

US07993093B2 Systems and methods for wafer translation 失效
标题翻译：晶圆翻译的系统和方法
公开(公告)号：US07993093B2
公开(公告)日：2011-08-09
申请号：US10941600
申请日：2004-09-15
申请人： Victor Mimken
发明人： Victor Mimken
IPC分类号： B07C1/18
CPC分类号： H01L21/67057 , H01L21/67742 , H01L21/68707 , Y10S414/136
摘要： A two-axis automation system can be used to transfer and rotate wafers between horizontal and vertical orientations necessary for differing steps in a semiconductor fabrication process. The two rotational axes allow for the transfer and rotation to be done in a minimal space and with a minimum amount of swept volume. A transfer arm of the automation system can include a pair of load pads capable of loading and unloading a wafer processing chamber in a single sweep.
摘要翻译：可以使用双轴自动化系统来在半导体制造工艺中的不同步骤所需的水平和垂直取向之间传送和旋转晶片。两个旋转轴允许传送和旋转在最小的空间中以最小的扫掠体积进行。自动化系统的传送臂可以包括能够在单次扫描中装载和卸载晶片处理室的一对负载焊盘。

8. 发明授权

US07566850B2 Method of hot wire welding of plastics 失效
标题翻译：塑料热丝焊接方法
公开(公告)号：US07566850B2
公开(公告)日：2009-07-28
申请号：US11460117
申请日：2006-07-26
申请人： Victor Mimken
发明人： Victor Mimken
IPC分类号： B23K13/01 , B44C1/22
CPC分类号： B08B3/04 , B08B3/12 , B29C65/20 , B29C65/222 , B29C65/228 , B29C65/342 , B29C65/3464 , B29C65/3468 , B29C65/3476 , B29C66/1122 , B29C66/1142 , B29C66/12241 , B29C66/43 , B29C66/43441 , B29C66/54 , B29C66/543 , B29C66/71 , B29K2027/12 , B29K2027/16 , B29L2031/7406 , B29K2027/18 , B29K2027/06 , B29K2021/003
摘要： A method and apparatus for welding polymer components by forming a groove along a surface of a polymer part to be welded, placing a conductive member in the groove, heating the conductive member to a first temperature for a first period, allowing the parts to cool for a second period to form a weldment, heating the conductive member to a second temperature for a third period, and removing the conductive member from the weldment.
摘要翻译：一种用于通过沿着待焊接的聚合物部件的表面形成凹槽来焊接聚合物部件的方法和装置，将导电部件放置在凹槽中，将导电部件加热到第一温度第一时间段，从而允许部件冷却形成焊件的第二周期，将导电部件加热到第二温度第三周期，以及从焊件移除导电部件。

9. 发明申请

US20060104795A1 Systems and methods for wafer translation 失效
标题翻译：晶圆翻译的系统和方法
公开(公告)号：US20060104795A1
公开(公告)日：2006-05-18
申请号：US10941600
申请日：2004-09-15
申请人： Victor Mimken
发明人： Victor Mimken
IPC分类号： B29C31/00
CPC分类号： H01L21/67057 , H01L21/67742 , H01L21/68707 , Y10S414/136
摘要： A two-axis automation system can be used to transfer and rotate wafers between horizontal and vertical orientations necessary for differing steps in a semiconductor fabrication process. The two rotational axes allow for the transfer and rotation to be done in a minimal space and with a minimum amount of swept volume. A transfer arm of the automation system can include a pair of load pads capable of loading and unloading a wafer processing chamber in a single sweep.
摘要翻译：可以使用双轴自动化系统来在半导体制造工艺中的不同步骤所需的水平和垂直取向之间传送和旋转晶片。两个旋转轴允许传送和旋转在最小的空间中以最小的扫掠体积进行。自动化系统的传送臂可以包括能够在单次扫描中装载和卸载晶片处理室的一对负载焊盘。

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