专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080000495A1 APPARATUS AND METHOD FOR SINGLE SUBSTRATE PROCESSING 审中-公开
标题翻译：单基板加工的装置和方法
公开(公告)号：US20080000495A1
公开(公告)日：2008-01-03
申请号：US11460172
申请日：2006-07-26
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Wyland Atkins , Yongqiang Lu
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Wyland Atkins , Yongqiang Lu
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , B08B3/048 , H01L21/67028 , H01L21/67057 , H01L21/67086 , H01L21/67253 , H01L21/67751 , H01L21/68707
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

2. 发明申请

US20070272657A1 APPARATUS AND METHOD FOR SINGLE SUBSTRATE PROCESSING 审中-公开
标题翻译：单基板加工的装置和方法
公开(公告)号：US20070272657A1
公开(公告)日：2007-11-29
申请号：US11460171
申请日：2006-07-26
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Yongqiang Lu
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M. Yalamanchili , John Rosato , Yongqiang Lu
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , B08B3/048 , H01L21/67028 , H01L21/67086 , H01L21/67253 , H01L21/67751 , H01L21/68707
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

3. 发明申请

US20060148267A1 Apparatus and method for single-or double-substrate processing 审中-公开
标题翻译：用于单面或双面基板加工的装置和方法
公开(公告)号：US20060148267A1
公开(公告)日：2006-07-06
申请号：US10492726
申请日：2002-12-06
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M Yalamanchili , John Rosato
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M Yalamanchili , John Rosato
IPC分类号： H01L21/306 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02052 , B08B3/048 , B08B3/12 , H01L21/67028 , H01L21/67034 , H01L21/67057 , H01L21/67751
摘要： In a method for treating semiconductor substrates, one or two substrates are positioned in a substrate process chamber and subjected to wet etching, cleaning, rinsing and/or drying steps. During cleaning or rinsing a band of megasonic energy is created within the process chamber to create an active rinse or cleaning zone, and the substrate(s) are translated through the active zone during a rinsing or cleaning process within the chamber.
摘要翻译：在处理半导体衬底的方法中，将一个或两个衬底放置在衬底处理室中，并进行湿蚀刻，清洗，漂洗和/或干燥步骤。在清洁或漂洗期间，在处理室内产生一系列兆声波能量，以产生主动冲洗或清洗区域，并且在室内的漂洗或清洁过程中将基底平移通过活性区。

4. 发明授权

US06726848B2 Apparatus and method for single substrate processing 失效
标题翻译：单基板加工的装置和方法
公开(公告)号：US06726848B2
公开(公告)日：2004-04-27
申请号：US10010240
申请日：2001-12-07
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M. Rao Yalamanchili , John Rosato
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M. Rao Yalamanchili , John Rosato
IPC分类号： H01L2100
CPC分类号： H01L21/02052 , B08B3/048 , B08B3/12 , H01L21/67028 , H01L21/67034 , H01L21/67057 , H01L21/67751
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

5. 发明申请

US20090029560A1 Apparatus and method for single substrate processing 审中-公开
标题翻译：单基板加工的装置和方法
公开(公告)号：US20090029560A1
公开(公告)日：2009-01-29
申请号：US11445707
申请日：2006-06-02
申请人： Eric Hansen , Victor Mimken , Martin Bleck , R. Rao Yalamanchili , John Rosato , Wyland L. Atkins
发明人： Eric Hansen , Victor Mimken , Martin Bleck , R. Rao Yalamanchili , John Rosato , Wyland L. Atkins
IPC分类号： H01L21/306 , B08B3/04
CPC分类号： H01L21/67028 , B08B3/02 , B08B3/048 , B08B3/12 , B08B2203/0288 , H01L21/02052 , H01L21/67057 , H01L21/67751 , H01L21/68707
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

6. 发明申请

US20050230260A1 Plating apparatus and method 审中-公开
标题翻译：电镀装置及方法
公开(公告)号：US20050230260A1
公开(公告)日：2005-10-20
申请号：US11051521
申请日：2005-02-04
申请人： Martin Bleck , Robert Berner , Gerard Minogue , Fernando Sanchez , Mathew Hannon , Thomas Griego
发明人： Martin Bleck , Robert Berner , Gerard Minogue , Fernando Sanchez , Mathew Hannon , Thomas Griego
IPC分类号： C23C18/16 , C25D5/00 , C25D7/12 , C25D17/00 , C25D21/00
CPC分类号： C25D5/003 , C23C18/1619 , C25D7/123 , C25D17/001
摘要： The present invention comprises a metal plating apparatus and method, particularly suitable for autocatalytic (i.e., electroless) plating, comprising a pressurized sealable vessel for disposing a substrate to be plated and for the circulation of plating solutions wherein temperatures and pressure are highly controllable.
摘要翻译：本发明包括一种特别适用于自动催化（即无电镀）的金属电镀装置和方法，包括用于设置待镀层的基底和用于循环电镀溶液的加压密封容器，其中温度和压力是高度可控的。

7. 发明授权

US06843859B1 Dump door 失效
标题翻译：倾倒门
公开(公告)号：US06843859B1
公开(公告)日：2005-01-18
申请号：US10085565
申请日：2002-02-26
申请人： Martin Bleck , Wyland L. Atkins
发明人： Martin Bleck , Wyland L. Atkins
IPC分类号： B08B3/12 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67057 , B08B3/048 , B08B3/12 , Y10S134/902
摘要： A compliant door assembly for use in sealing an opening in a vessel bottom includes a door having a sealing wall, the sealing wall having a contact face moveable into contact with a wall surrounding the vessel bottom. A reinforcing member is moveable into contact with the back face of the sealing wall, thereby reinforcing sealing contact between the contact face and the wall surrounding the opening.
摘要翻译：用于密封容器底部中的开口的柔性门组件包括具有密封壁的门，所述密封壁具有可移动地与围绕容器底部的壁接触的接触面。加强构件可移动地与密封壁的背面接触，从而加强接触面和围绕开口的壁之间的密封接触。

8. 发明申请

US20050061675A1 Semiconductor plating system workpiece support having workpiece-engaging electrodes with distal contact part and dielectric cover 审中-公开
标题翻译：半导体电镀系统工件支架具有工件接合电极与远端接触部分和电介质盖
公开(公告)号：US20050061675A1
公开(公告)日：2005-03-24
申请号：US10716191
申请日：2003-11-18
申请人： Martin Bleck , Lyndon Graham , Kyle Hanson
发明人： Martin Bleck , Lyndon Graham , Kyle Hanson
IPC分类号： H01L21/687 , C25D5/02 , C25D17/00
CPC分类号： H01L21/68728 , H01L21/68785 , H01L21/68792
摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers onto a semiconductor workpieces, and is of particular advantage in connection with plating copper onto semiconductor materials. The workpiece holder includes electrode assemblies which have a contact part which connects to a distal end of an electrode shaft and bears against the workpiece and conducts current therebetween. The contact part is preferably made from a corrosion resistant material, such as platinum. The electrode assembly also preferably includes a dielectric layer which covers the distal end of the electrode shaft and seals against the contact part to prevent plating liquid from corroding the joint between these parts.
摘要翻译：一种用于电镀系统中用于将金属层镀在半导体工件上的半导体工件保持器，并且在将铜电镀到半导体材料上方面具有特别的优点。工件保持器包括电极组件，其具有接触部分，该接触部分连接到电极轴的远端并承受工件并在其间传导电流。接触部分优选由诸如铂的耐腐蚀材料制成。电极组件还优选包括覆盖电极轴的远端并密封接触部分的电介质层，以防止电镀液腐蚀这些部件之间的接合部。

9. 发明授权

US5980706A Electrode semiconductor workpiece holder 失效
标题翻译：电极半导体工件夹具
公开(公告)号：US5980706A
公开(公告)日：1999-11-09
申请号：US680057
申请日：1996-07-15
申请人： Martin Bleck , Kenneth C. Haugan , Larry R. Radloff , Harry Geyer
发明人： Martin Bleck , Kenneth C. Haugan , Larry R. Radloff , Harry Geyer
IPC分类号： H01L21/687 , C25D17/06
CPC分类号： H01L21/68728 , H01L21/68785
摘要： A semiconductor workpiece holder for use in processing a semiconductor workpiece includes a workpiece support operatively mounted to support a workpiece in position for processing. A finger assembly is operatively mounted upon the workpiece support and includes a finger tip. The finger assembly is movable between an engaged position in which the finger tip is engaged against the workpiece, and a disengaged position in which the finger tip is moved away from the workpiece. Preferably, at least one electrode forms part of the finger assembly and includes an electrode contact for contacting a surface of said workpiece. At least one protective sheath covers at least some of the electrode contact. According to one aspect of the invention, a sheathed electrode having a sheathed electrode tip is positioned against a semiconductor workpiece surface in a manner engaging the workpiece surface with said sheathed electrode tip. A seal is formed about the periphery of the electrode tip, and with the electrode tip engaging the workpiece, a desired electrical contact is made to the workpiece. Thereafter, the workpiece is exposed to desired semiconductor processing conditions.
摘要翻译：用于处理半导体工件的半导体工件保持件包括可操作地安装以将工件支撑在适于处理的工件的工件支撑件。手指组件可操作地安装在工件支撑件上并且包括指尖。手指组件可在指尖接合工件的接合位置和指尖从工件移开的脱离位置之间移动。优选地，至少一个电极形成指状组件的一部分，并且包括用于接触所述工件的表面的电极接触。至少一个护套覆盖至少一些电极接触。根据本发明的一个方面，具有护套电极末端的护套电极以与所述护套电极末端接合工件表面的方式抵靠半导体工件表面定位。围绕电极末端的周边形成密封，并且电极末端与工件接合，对工件进行所需的电接触。此后，将工件暴露于期望的半导体加工条件。

10. 发明授权

US06733649B2 Electrochemical processing method 有权
标题翻译：电化学处理方法
公开(公告)号：US06733649B2
公开(公告)日：2004-05-11
申请号：US09811261
申请日：2001-03-16
申请人： Martin Bleck , Kenneth C. Haugan , Larry R. Radloff , Harry Geyer
发明人： Martin Bleck , Kenneth C. Haugan , Larry R. Radloff , Harry Geyer
IPC分类号： C25D500
CPC分类号： H01L21/68728 , H01L21/68785
摘要： A semiconductor workpiece holder for use in processing a semiconductor workpiece includes a workpiece support operatively mounted to support a workpiece in position for processing. A finger assembly is operatively mounted upon the workpiece support and includes a finger tip. The finger assembly is movable between an engaged position in which the finger tip is engaged against the workpiece, and a disengaged position in which the finger tip is moved away from the workpiece. Preferably, at least one electrode forms part of the finger assembly and includes an electrode contact for contacting a surface of said workpiece. At least one protective sheath covers at least some of the electrode contact. According to one aspect of the invention, a sheathed electrode having a sheathed electrode tip is positioned against a semiconductor workpiece surface in a manner engaging the workpiece surface with said sheathed electrode tip. A seal is formed about the periphery of the electrode tip, and with the electrode tip engaging the workpiece, a desired electrical contact is made to the workpiece. Thereafter, the workpiece is exposed to desired semiconductor processing conditions.
摘要翻译：用于处理半导体工件的半导体工件保持件包括可操作地安装以将工件支撑在适于处理的工件的工件支撑件。手指组件可操作地安装在工件支撑件上并且包括指尖。手指组件可在指尖接合工件的接合位置和指尖从工件移开的脱离位置之间移动。优选地，至少一个电极形成指状组件的一部分，并且包括用于接触所述工件的表面的电极接触。至少一个护套覆盖至少一些电极接触。根据本发明的一个方面，具有护套电极末端的护套电极以与所述护套电极末端接合工件表面的方式抵靠半导体工件表面定位。围绕电极末端的周边形成密封，并且电极末端与工件接合，对工件进行所需的电接触。此后，将工件暴露于期望的半导体加工条件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式