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1. 发明申请

US20080176375A1 METHOD FOR FORMING A DIELECTRIC LAYER 审中-公开
标题翻译：形成介电层的方法
公开(公告)号：US20080176375A1
公开(公告)日：2008-07-24
申请号：US11970654
申请日：2008-01-08
申请人： Elke Erben , Stephan Kudelka , Alfred Kersch , Angela Link , Matthias Patz , Jonas Sundqvist
发明人： Elke Erben , Stephan Kudelka , Alfred Kersch , Angela Link , Matthias Patz , Jonas Sundqvist
IPC分类号： H01L21/31 , H01L21/02
CPC分类号： H01L21/3141 , C23C16/0272 , C23C16/405 , C23C16/45553 , H01L21/0228 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： The present invention relates to a deposition of a dielectric layer. On a substrate having a structured area a crystallization seed layer for a dielectric layer is deposited via an atomic layer deposition technique employing a first and a second precursor on the structured area of the substrate. The first pre-cursor is a compound having the constitutional formula M1(R1Cp)x(R2)4-x, wherein M1 is one of hafnium and zirconium, Cp is cyclopentadienyl, R1 is independently selected of methyl, ethyl and alkyl, R2 is independently selected of hydrogen, methyl, ethyl, alkyl and alkoxyl, and x is one or two. The dielectric layer is deposited on the crystallization seed layer via an atomic layer deposition technique employing a third and a forth precursor wherein the third pre-cursor being a compound having the constitutional formula M2 R3 R4 R5 R6, wherein M2 is one of hafnium or zirconium and R3, R4, R5, and R6 are independently selected of alkyl amines.
摘要翻译：本发明涉及电介质层的沉积。在具有结构区域的基板上，通过使用第一和第二前体的原子层沉积技术在基板的结构化区域上沉积用于电介质层的结晶种子层。第一个前体是具有结构式M 1（R 1）的化合物，其中R 1，R 2，R 2，其中M 1是铪和锆中的一种，Cp是环戊二烯基，R 1独立地选自甲基，乙基和烷基，R 2独立地选自氢，甲基，乙基，烷基和烷氧基，x是一个或两个。介电层通过使用第三和第四前体的原子层沉积技术沉积在结晶种子层上，其中第三个前体是具有结构式M 2 O 3的化合物其中M 2是铪或锆中的一种，R 2是R 5 R 4，R 5，R 6和R 6独立地选自烷基胺。

2. 发明申请

US20090321805A1 INSULATOR MATERIAL OVER BURIED CONDUCTIVE LINE 审中-公开
标题翻译：绝缘导线上的绝缘材料
公开(公告)号：US20090321805A1
公开(公告)日：2009-12-31
申请号：US12165072
申请日：2008-06-30
申请人： Johannes von Kluge , Arnd Scholz , Joerg Radecker , Matthias Patz , Stephan Kudelka , Alejandro Avellan
发明人： Johannes von Kluge , Arnd Scholz , Joerg Radecker , Matthias Patz , Stephan Kudelka , Alejandro Avellan
IPC分类号： H01L27/108 , H01L29/78 , H01L21/28 , H01L21/4763
CPC分类号： H01L29/4236 , H01L21/743 , H01L27/10876 , H01L27/10891 , H01L29/66621
摘要： One embodiment relates to an integrated circuit that includes a conductive line that is arranged in a groove in a semiconductor body. An insulating material is disposed over the conductive line. This insulating material includes a first insulating layer comprising a horizontal portion, and a second insulating layer that is disposed over the first insulating layer. Other methods, devices, and systems are also disclosed.
摘要翻译：一个实施例涉及一种集成电路，其包括布置在半导体主体中的凹槽中的导线。绝缘材料设置在导线上。该绝缘材料包括包括水平部分的第一绝缘层和设置在第一绝缘层上的第二绝缘层。还公开了其它方法，装置和系统。

3. 发明申请

US20080242097A1 Selective deposition method 审中-公开
标题翻译：选择性沉积法
公开(公告)号：US20080242097A1
公开(公告)日：2008-10-02
申请号：US11729360
申请日：2007-03-28
申请人： Tim Boescke , Annette Saenger , Stefan Jakschik , Christian Fachmann , Matthias Patz , Alejandro Avellan , Thomas Hecht , Jonas Sundqvist
发明人： Tim Boescke , Annette Saenger , Stefan Jakschik , Christian Fachmann , Matthias Patz , Alejandro Avellan , Thomas Hecht , Jonas Sundqvist
IPC分类号： H01L21/31 , H01L29/06
CPC分类号： H01L29/945 , C30B25/04 , H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/0228 , H01L21/02304 , H01L21/31604 , H01L21/31612 , H01L21/31616 , H01L21/31645
摘要： The invention refers to a selective deposition method. A substrate comprising at least one structured surface is provided. The structured surface comprises a first area and a second area. The first area is selectively passivated regarding reactants of a first deposition technique and the second area is activated regarding the reactants the first deposition technique. A passivation layer on the second area is deposited via the first deposition technique. The passivation layer is inert regarding a precursors selected from a group of oxidizing reactants. A layer is deposited in the second area using a second atomic layer deposition technique as second deposition technique using the precursors selected form the group of oxidizing reactants.
摘要翻译：本发明涉及选择性沉积方法。提供了包括至少一个结构化表面的衬底。结构化表面包括第一区域和第二区域。对于第一沉积技术的反应物，第一区域被选择性地钝化，并且第二区域被激活关于第一沉积技术的反应物。通过第一沉积技术沉积第二区域上的钝化层。对于选自一组氧化反应物的前体，钝化层是惰性的。使用第二原子层沉积技术将层沉积在第二区域中，作为使用从氧化反应物组中选择的前体的第二沉积技术。

4. 发明申请

US20080173917A1 Selective deposition method 审中-公开
标题翻译：选择性沉积法
公开(公告)号：US20080173917A1
公开(公告)日：2008-07-24
申请号：US11655664
申请日：2007-01-19
申请人： Matthias Patz , Alexey Ivanov , Stephan Kudelka
发明人： Matthias Patz , Alexey Ivanov , Stephan Kudelka
IPC分类号： H01L27/108 , H01L21/334
CPC分类号： H01L29/66181 , H01L27/1087
摘要： The invention relates to a deposition method performing the following steps. A substrate is provided which is structured to comprise a first surface and a second surface, which differ in at least one of geometric orientation and vertical distance to a principle surface of the substrate. An etchable layer is deposited on the first surface via an atomic layer deposition technique the deposition technique using a first precursor supplied in an amount sufficient to cover at least parts of the first surface and insufficient to cover the second surface, the first precursor being supplied from a direction to pass the first surface before the second surface. A dielectric layer of at least one of a transition metal oxide and a transition metal nitride is deposited on at least the second surface via an atomic layer deposition technique using a second precursor.
摘要翻译：本发明涉及一种执行以下步骤的沉积方法。提供了一种衬底，其被构造成包括第一表面和第二表面，所述第一表面和第二表面在基底的主要表面的几何取向和垂直距离中的至少一个方面不同。可蚀刻层通过原子层沉积技术沉积在第一表面上，沉积技术使用以足以覆盖第一表面的至少一部分并且不足以覆盖第二表面的量供应的第一前体，第一前体从在第二表面之前通过第一表面的方向。过渡金属氧化物和过渡金属氮化物中的至少一种的电介质层通过使用第二前体的原子层沉积技术沉积在至少第二表面上。

5. 发明授权

US10457813B2 Formulations comprising hydridosilanes and hydridosilane oligomers, their process of manufacture and their use 有权
公开(公告)号：US10457813B2
公开(公告)日：2019-10-29
申请号：US14899388
申请日：2014-06-12
申请人： Paul Henrich Woebkenberg , Matthias Patz , Stephan Traut , Jutta Hessing , Miriam Deborah Malsch
发明人： Paul Henrich Woebkenberg , Matthias Patz , Stephan Traut , Jutta Hessing , Miriam Deborah Malsch
IPC分类号： C09D1/00 , C23C18/12 , C09D183/04 , H01L31/18 , C08G77/12
摘要： The present invention relates to formulations comprising at least one hydridosilane of the generic formula SinH2n+2 with n=3-6 and at least one hydridosilane oligomer, to processes for preparation thereof and to the use thereof.

6. 发明授权

US09017630B2 Method for producing hydridosilanes 有权
标题翻译：生产氢硅烷的方法
公开(公告)号：US09017630B2
公开(公告)日：2015-04-28
申请号：US13504331
申请日：2010-11-08
申请人： Stephan Wieber , Matthias Patz , Martin Trocha , Hartwig Rauleder , Ekkehard Mueh , Harald Stueger , Christoph Walkner
发明人： Stephan Wieber , Matthias Patz , Martin Trocha , Hartwig Rauleder , Ekkehard Mueh , Harald Stueger , Christoph Walkner
IPC分类号： C01B33/04 , C01B33/107
CPC分类号： C01B33/04 , C01B33/043 , C01B33/10773 , Y10T428/31663
摘要： The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n≧3 and X═F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR″bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R′ and/or R″ are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R′ and R″ (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R′ or R″ is unequal —CH3 and/or wherein bb) R and R′ and/or R″' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N═, or cc) (if a=b=c=0) R═≡C-R′″ (with R′″═—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SimX2m+2 (with m>n and X═F, Cl, Br and/or I) and SiX4 (with X═F, Cl, Br and/or I), and b) hydrogenating the at least one halosilane of the generic formula SimH2m+2 while forming a hydridosilane of the generic formula SimH2m+2. The invention also relates to the hydridosilanes producible according to said method and to their use.
摘要翻译：本发明涉及一种由卤代硅烷生产氢硅烷的方法，其通过以下步骤：a）使i）至少一种通式为SinX2n + 2（n≥3，X = F，Cl，Br和/或I）的卤代硅烷与ii） a = 0或1，b = 0或1，c = 0或1和式（I）的通式NRR'aR“bYc的至少一种催化剂，其中aa）R，R'和/或R” 是-C 1 -C 12烷基，-C 1 -C 12芳基，-C 1 -C 12芳烷基，-C 1 -C 12氨基烷基，-C 1 -C 12氨基芳基，-C 1 -C 12氨基烷基和/或两个或三个基团R，R'和R “（如果c = 0）一起形成包括N的环状或双环，杂脂族或杂芳族体系，条件是至少一个基团R，R'或R”不等于-CH 3和/或其中bb）R和R' 和/或R“'（如果c = 1）是-C 1 -C 12亚烷基，-C 1 -C 12亚芳基，-C 1 -C 12亚芳基，-C 1 -C 12杂亚烷基，-C 1 -C 12亚杂芳基，-C 1 -C 12杂亚烷基和/ 或-N =或cc）（如果a = b = c = 0）R≡≡CR'“（其中R'”= C 1 -C 10烷基，-C 1 -C 10芳基和/或-C 1 -C 10芳烷基），同时形成包含通式SimX2m + 2（具有m> n和X = F，Cl，Br和/或I）的至少一种卤代硅烷和SiX 4（具有X = F，Cl，Br和 /或I），和b）在形成通式SimH 2 m + 2的氢硅烷的同时使通式SimH 2 m + 2的至少一种卤代硅烷氢化。本发明还涉及根据所述方法可生产的氢硅石及其用途。

7. 发明申请

US20120214005A1 METHOD FOR PRODUCING HYDRIDOSILANES 有权
标题翻译：生产水合物的方法
公开(公告)号：US20120214005A1
公开(公告)日：2012-08-23
申请号：US13504331
申请日：2010-11-08
申请人： Stephan Wieber , Matthias Patz , Martin Trocha , Hartwig Rauleder , Ekkehard Mueh , Harald Stueger , Christoph Walkner
发明人： Stephan Wieber , Matthias Patz , Martin Trocha , Hartwig Rauleder , Ekkehard Mueh , Harald Stueger , Christoph Walkner
IPC分类号： B32B9/04 , C01B33/04
CPC分类号： C01B33/04 , C01B33/043 , C01B33/10773 , Y10T428/31663
摘要： The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n≧3 and X═F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR″bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R′ and/or R″ are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R′ and R″ (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R′ or R″ is unequal —CH3 and/or wherein bb) R and R′ and/or R″' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N═, or cc) (if a=b=c=0) R═≡C-R′″ (with R′″═—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SimX2m+2 (with m>n and X═F, Cl, Br and/or I) and SiX4 (with X═F, Cl, Br and/or I), and b) hydrogenating the at least one halosilane of the generic formula SimH2m+2 while forming a hydridosilane of the generic formula SimH2m+2. The invention also relates to the hydridosilanes producible according to said method and to their use
摘要翻译：本发明涉及一种由卤代硅烷生产氢硅烷的方法，其通过以下步骤：a）使i）至少一种通式为SinX2n + 2（n≥3，X = F，Cl，Br和/或I）的卤代硅烷与ii） a = 0或1，b = 0或1，c = 0或1和式（I）的通式NRR'aR“bYc的至少一种催化剂，其中aa）R，R'和/或R” 是-C 1 -C 12烷基，-C 1 -C 12芳基，-C 1 -C 12芳烷基，-C 1 -C 12氨基烷基，-C 1 -C 12氨基芳基，-C 1 -C 12氨基烷基和/或两个或三个基团R，R'和R “（如果c = 0）一起形成包括N的环状或双环，杂脂族或杂芳族体系，条件是至少一个基团R，R'或R”不等于-CH 3和/或其中bb）R和R' 和/或R“'（如果c = 1）是-C 1 -C 12亚烷基，-C 1 -C 12亚芳基，-C 1 -C 12亚芳基，-C 1 -C 12杂亚烷基，-C 1 -C 12亚杂芳基，-C 1 -C 12杂亚烷基和/ 或-N =或cc）（如果a = b = c = 0）R≡≡CR'“（其中R'”= C 1 -C 10烷基，-C 1 -C 10芳基和/或-C 1 -C 10芳烷基），同时形成包含通式SimX2m + 2（具有m> n和X = F，Cl，Br和/或I）的至少一种卤代硅烷和SiX 4（具有X = F，Cl，Br和 /或I），和b）在形成通式SimH 2 m + 2的氢硅烷的同时使通式SimH 2 m + 2的至少一种卤代硅烷氢化。本发明还涉及根据所述方法可生产的氢硅石及其用途

8. 发明授权

US06890605B2 Method of film formation, insulating film, and substrate for semiconductor 有权
标题翻译：成膜方法，绝缘膜和半导体用基板
公开(公告)号：US06890605B2
公开(公告)日：2005-05-10
申请号：US10252607
申请日：2002-09-24
申请人： Michinori Nishikawa , Manabu Sekiguchi , Matthias Patz , Mutsuhiko Yoshioka , Atsushi Shiota , Kinji Yamada
发明人： Michinori Nishikawa , Manabu Sekiguchi , Matthias Patz , Mutsuhiko Yoshioka , Atsushi Shiota , Kinji Yamada
IPC分类号： C09D183/06 , C23C18/12 , H01L21/312 , B05D3/04 , B05D3/06 , H05H1/00
CPC分类号： H01L21/3122 , C23C18/04 , C23C18/1212 , C23C18/122 , H01L21/02126 , H01L21/0214 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02282 , H01L21/0234 , H01L21/02343 , H01L21/02348 , Y10T428/25 , Y10T428/259
摘要： An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising:(A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and(B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.
摘要翻译：提供了一种半导体用绝缘膜，其与通过CVD形成的膜具有优异的粘附性，并且可用作半导体器件等中的电介质膜。绝缘膜是通过以下方法获得的：（A）使基材经受（A-1）至少一种选自紫外线照射处理，氧等离子体处理，氮等离子体处理，氦等离子体处理，氩等离子体处理，氢等离子体处理和氨等离子体处理，以及（A-2）使用具有反应性基团的烷氧基硅烷化合物和水解和冷凝; 和（B）应用如上所述的包含有机溶剂和选自由通式（1）至（4）表示的化合物组成的组中的至少一种化合物中的任一种或两者的成膜用组合物的步骤，以及通过水解和冷凝至少一种化合物而获得的水解/缩合产物，并加热所得到的涂层。

9. 发明授权

US06824833B2 Stacked film, insulating film and substrate for semiconductor 失效
标题翻译：叠层膜，绝缘膜和半导体基板
公开(公告)号：US06824833B2
公开(公告)日：2004-11-30
申请号：US10255941
申请日：2002-09-27
申请人： Michinori Nishikawa , Manabu Sekiguchi , Matthias Patz , Atsushi Shiota , Kinji Yamada
发明人： Michinori Nishikawa , Manabu Sekiguchi , Matthias Patz , Atsushi Shiota , Kinji Yamada
IPC分类号： B05D302
CPC分类号： H01L21/02126 , C08G65/4068 , C09D183/14 , H01L21/312 , Y10T428/31533 , Y10T428/31663 , Y10T428/31667
摘要： A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.
摘要翻译：公开了一种用于半导体的叠层膜，其具有对例如半导体器件中的CVD工艺形成的涂膜具有优异的粘合性，具有堆叠膜的绝缘膜和使用绝缘膜的半导体衬底。层叠膜包含（A）碳含量为60重量％以上的有机化合物的膜，（B）通过加热通过水解缩合得到的水解缩合物而制备的膜，所述水解缩合物是通过水解缩合得到的，由上述通式（51）至（54）表示的具体化合物组成。

10. 发明授权

US09096922B2 Silicon layers formed from polymer-modified liquid silane formulations 有权
标题翻译：由聚合物改性液体硅烷配方形成的硅层
公开(公告)号：US09096922B2
公开(公告)日：2015-08-04
申请号：US13503668
申请日：2010-10-18
申请人： Bernhard Stuetzel , Matthias Patz
发明人： Bernhard Stuetzel , Matthias Patz
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376 , H01L29/12 , H01L31/0312 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , C23C18/12 , C23C18/14 , H01L21/02
CPC分类号： C23C18/1204 , C09D183/16 , C23C18/122 , C23C18/14 , H01L21/0242 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628
摘要： The invention relates to a formulation which contains at least one silane and at least one carbon polymer in a solvent, and to the production of a silicon layer on a substrate which is coated with such a formulation.
摘要翻译：本发明涉及一种在溶剂中含有至少一种硅烷和至少一种碳聚合物的制剂，以及在涂有这种制剂的基材上生产硅层。

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