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1. 发明申请

US20120042951A1 TAILORING THE BAND GAP OF SOLAR CELLS MADE OF LIQUID SILANE BY ADDING GERMANIUM 有权
标题翻译：通过添加德国制造液体硅烷的太阳能电池带
公开(公告)号：US20120042951A1
公开(公告)日：2012-02-23
申请号：US13265417
申请日：2010-04-28
申请人： Bernhard Stuetzel , Wolfgang Fahrner
发明人： Bernhard Stuetzel , Wolfgang Fahrner
IPC分类号： H01L31/0264
CPC分类号： C23C18/1295 , C23C18/1204 , C23C18/122 , C23C18/1245 , C23C18/14 , H01L21/0242 , H01L21/02532 , H01L21/02628 , H01L31/028 , H01L31/03687 , H01L31/1804 , H01L31/1816 , H01L31/1864 , H01L31/204 , Y02E10/547 , Y02E10/548 , Y02P70/521 , Y10T428/31663
摘要： The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.
摘要翻译：本发明涉及一种减少或增加光伏器件生产中的带隙偏移的方法，其通过用含有硅化合物的制剂涂覆基底，例如在太阳能电池的制造中，包括以下步骤：底物涂覆有液体硅烷制剂，本发明的特征在于该制剂还含有至少一种锗化合物。本发明还涉及制造这种光伏器件的方法。

2. 发明授权

US08969610B2 Method for oligomerizing hydridosilanes, the oligomers that can be produced by means of the method, and the use thereof 有权
标题翻译：低聚硅藻土的方法，可以通过该方法生产的低聚物及其用途
公开(公告)号：US08969610B2
公开(公告)日：2015-03-03
申请号：US13574376
申请日：2011-02-16
申请人： Stephan Wieber , Matthias Patz , Bernhard Stuetzel , Michael Coelle , Nicole Brausch , Janette Klatt , Jutta Hessing
发明人： Stephan Wieber , Matthias Patz , Bernhard Stuetzel , Michael Coelle , Nicole Brausch , Janette Klatt , Jutta Hessing
IPC分类号： C07F7/02 , C08G77/60 , C09D183/16 , H01L21/02
CPC分类号： C08G77/60 , C09D183/16 , H01L21/02422 , H01L21/02532 , H01L21/02628
摘要： The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.
摘要翻译：本发明涉及一种低聚硅烷的方法，其中基本上含有至少一个具有最多20个硅原子的非环状氢硅烷作为氢硅烷的组合物在不存在催化剂的情况下在235℃以下的温度下热转化，可以根据该方法制备的低聚物及其用途。

3. 发明申请

US20120205654A1 SILICON LAYERS FORMED FROM POLYMER-MODIFIED LIQUID SILANE FORMULATIONS 有权
标题翻译：由聚合物改性的液体硅烷配方制成的硅层
公开(公告)号：US20120205654A1
公开(公告)日：2012-08-16
申请号：US13503668
申请日：2010-10-18
申请人： Bernhard Stuetzel , Matthias Patz
发明人： Bernhard Stuetzel , Matthias Patz
IPC分类号： H01L29/04 , C09D125/08 , H01L21/20 , C09D125/06
CPC分类号： C23C18/1204 , C09D183/16 , C23C18/122 , C23C18/14 , H01L21/0242 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628
摘要： The invention relates to a formulation which contains at least one silane and at least one carbon polymer in a solvent, and to the production of a silicon layer on a substrate which is coated with such a formulation.
摘要翻译：本发明涉及在溶剂中含有至少一种硅烷和至少一种碳聚合物的制剂，以及在涂有这种制剂的基材上生产硅层。

4. 发明授权

US08709858B2 Tailoring the band gap of solar cells made of liquid silane by adding germanium 有权
标题翻译：通过添加锗来调整由液态硅烷制成的太阳能电池的带隙
公开(公告)号：US08709858B2
公开(公告)日：2014-04-29
申请号：US13265417
申请日：2010-04-28
申请人： Bernhard Stuetzel , Wolfgang Fahrner
发明人： Bernhard Stuetzel , Wolfgang Fahrner
IPC分类号： H01L31/028
CPC分类号： C23C18/1295 , C23C18/1204 , C23C18/122 , C23C18/1245 , C23C18/14 , H01L21/0242 , H01L21/02532 , H01L21/02628 , H01L31/028 , H01L31/03687 , H01L31/1804 , H01L31/1816 , H01L31/1864 , H01L31/204 , Y02E10/547 , Y02E10/548 , Y02P70/521 , Y10T428/31663
摘要： The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.
摘要翻译：本发明涉及一种减少或增加光伏器件生产中的带隙偏移的方法，其通过用含有硅化合物的制剂涂覆基底，例如在太阳能电池的制造中，包括以下步骤：底物涂覆有液体硅烷制剂，本发明的特征在于该制剂还含有至少一种锗化合物。本发明还涉及制造这种光伏器件的方法。

5. 发明授权

US08470632B2 Process for producing doped silicon layers, silicon layers obtainable by the process and use thereof 有权
标题翻译：用于制造掺杂硅层的方法，可通过该方法获得的硅层及其用途
公开(公告)号：US08470632B2
公开(公告)日：2013-06-25
申请号：US13502629
申请日：2010-11-10
申请人： Bernhard Stuetzel , Wolfgang Fahrner
发明人： Bernhard Stuetzel , Wolfgang Fahrner
IPC分类号： H01L21/00
CPC分类号： H01L21/228 , H01L21/02532 , H01L21/02579 , H01L21/02628 , H01L21/02667 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to a process for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) introducing electromagnetic and/or thermal energy to obtain an at least partly polymorphic silicon layer, (d) providing a liquid formulation which comprises at least one aluminum-containing metal complex, (e) applying this formulation to the silicon layer obtained after step (c) and then (f) heating the coating obtained after step (e) by introducing electromagnetic and/or thermal energy, which decomposes the formulation obtained after step (d) at least to metal and hydrogen, and then (g) cooling the coating obtained after step (f) to obtain an Al-doped or Al- and metal-doped silicon layer, to doped silicon layers obtainable by the process and to the use thereof for production of light-sensitive elements and electronic components.
摘要翻译：本发明涉及一种在衬底上制造掺杂硅层的方法，其包括以下步骤：（a）提供液态硅烷配方和衬底，（b）将液态硅烷配制物施用于衬底，（c）引入电磁和/或热能以获得至少部分多晶硅的硅层，（d）提供包含至少一种含铝金属络合物的液体制剂，（e）将该制剂施用到在步骤（c）之后获得的硅层和然后（f）通过引入电磁和/或热能来加热在步骤（e）之后获得的涂层，其将在步骤（d）之后获得的制剂至少分解成金属和氢，然后（g）冷却步骤（f）获得Al掺杂或Al和金属掺杂的硅层，可以通过该方法获得的掺杂硅层及其用于生产光敏元件和电子元件的用途。

6. 发明授权

US09153432B2 Modification of silicon layers formed from silane-containing formulations 有权
标题翻译：由含硅烷制剂形成的硅层的改性
公开(公告)号：US09153432B2
公开(公告)日：2015-10-06
申请号：US13807852
申请日：2011-06-20
申请人： Bernhard Stuetzel , Wolfgang Fahrner
发明人： Bernhard Stuetzel , Wolfgang Fahrner
IPC分类号： H01L21/02 , C23C18/12 , C23C18/14 , H01L29/16 , H01L31/0376 , H01L31/075 , H01L31/18
CPC分类号： H01L21/02532 , C23C18/1204 , C23C18/1212 , C23C18/1225 , C23C18/1295 , C23C18/14 , H01L21/02123 , H01L21/02318 , H01L21/02587 , H01L21/0262 , H01L21/02628 , H01L21/02664 , H01L29/1604 , H01L31/0376 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： The invention relates to a process for producing an oxygen-containing surface or interface of a silicon layer, which is arranged on a substrate, especially in the production of photovoltaic units.
摘要翻译：本发明涉及一种制备含硅表面或硅层的界面的方法，该方法设置在基板上，特别是在制造光电单元中。

7. 发明申请

US20130099236A1 MODIFICATION OF SILICON LAYERS FORMED FROM SILANE-CONTAINING FORMULATIONS 有权
标题翻译：含硅制剂制备的硅层的改性
公开(公告)号：US20130099236A1
公开(公告)日：2013-04-25
申请号：US13807852
申请日：2011-06-20
申请人： Bernhard Stuetzel , Wolfgang Fahrner
发明人： Bernhard Stuetzel , Wolfgang Fahrner
IPC分类号： H01L21/02 , H01L31/0376 , H01L29/16
CPC分类号： H01L21/02532 , C23C18/1204 , C23C18/1212 , C23C18/1225 , C23C18/1295 , C23C18/14 , H01L21/02123 , H01L21/02318 , H01L21/02587 , H01L21/0262 , H01L21/02628 , H01L21/02664 , H01L29/1604 , H01L31/0376 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： The invention relates to a process for producing an oxygen-containing surface or interface of a silicon layer, which is arranged on a substrate, especially in the production of photovoltaic units.
摘要翻译：本发明涉及一种制备含硅表面或硅层的界面的方法，该方法设置在基板上，特别是在制造光电单元中。

8. 发明授权

US09096922B2 Silicon layers formed from polymer-modified liquid silane formulations 有权
标题翻译：由聚合物改性液体硅烷配方形成的硅层
公开(公告)号：US09096922B2
公开(公告)日：2015-08-04
申请号：US13503668
申请日：2010-10-18
申请人： Bernhard Stuetzel , Matthias Patz
发明人： Bernhard Stuetzel , Matthias Patz
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376 , H01L29/12 , H01L31/0312 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , C23C18/12 , C23C18/14 , H01L21/02
CPC分类号： C23C18/1204 , C09D183/16 , C23C18/122 , C23C18/14 , H01L21/0242 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628
摘要： The invention relates to a formulation which contains at least one silane and at least one carbon polymer in a solvent, and to the production of a silicon layer on a substrate which is coated with such a formulation.
摘要翻译：本发明涉及一种在溶剂中含有至少一种硅烷和至少一种碳聚合物的制剂，以及在涂有这种制剂的基材上生产硅层。

9. 发明申请

US20120291665A1 METHOD FOR OLIGOMERIZING HYDRIDOSILANES, THE OLIGOMERS THAT CAN BE PRODUCED BY MEANS OF THE METHOD, AND THE USE THEREOF 有权
标题翻译：低浓度水解硅藻土的方法，可以通过方法生产的低聚物及其用途
公开(公告)号：US20120291665A1
公开(公告)日：2012-11-22
申请号：US13574376
申请日：2011-02-16
申请人： Stephan Wieber , Matthias Patz , Bernhard Stuetzel , Michael Coelle , Nicole Brausch , Janette Klatt , Jutta Hessing
发明人： Stephan Wieber , Matthias Patz , Bernhard Stuetzel , Michael Coelle , Nicole Brausch , Janette Klatt , Jutta Hessing
IPC分类号： C01B33/04 , C09D1/00
CPC分类号： C08G77/60 , C09D183/16 , H01L21/02422 , H01L21/02532 , H01L21/02628
摘要： The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.
摘要翻译：本发明涉及一种低聚硅烷的方法，其中基本上含有至少一个具有最多20个硅原子的非环状氢硅烷作为氢硅烷的组合物在不存在催化剂的情况下在235℃以下的温度下热转化，可以根据该方法制备的低聚物及其用途。

10. 发明申请

US20120199832A1 PROCESS FOR PRODUCING DOPED SILICON LAYERS, SILICON LAYERS OBTAINABLE BY THE PROCESS AND USE THEREOF 有权
标题翻译：生产硅酸盐层的方法，可由该方法获得的硅层及其用途
公开(公告)号：US20120199832A1
公开(公告)日：2012-08-09
申请号：US13502629
申请日：2010-11-10
申请人： Bernhard Stuetzel , Wolfgang Fahrner
发明人： Bernhard Stuetzel , Wolfgang Fahrner
IPC分类号： H01L29/04 , H01L31/18 , H01L21/20
CPC分类号： H01L21/228 , H01L21/02532 , H01L21/02579 , H01L21/02628 , H01L21/02667 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to a process for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) introducing electromagnetic and/or thermal energy to obtain an at least partly polymorphic silicon layer, (d) providing a liquid formulation which comprises at least one aluminium-containing metal complex, (e) applying this formulation to the silicon layer obtained after step (c) and then (f) heating the coating obtained after step (e) by introducing electromagnetic and/or thermal energy, which decomposes the formulation obtained after step (d) at least to metal and hydrogen, and then (g) cooling the coating obtained after step (f) to obtain an Al-doped or Al- and metal-doped silicon layer, to doped silicon layers obtainable by the process and to the use thereof for production of light-sensitive elements and electronic components.
摘要翻译：本发明涉及一种在衬底上制造掺杂硅层的方法，其包括以下步骤：（a）提供液态硅烷配方和衬底，（b）将液态硅烷配制物施用于衬底，（c）引入电磁和/或热能以获得至少部分多晶硅的硅层，（d）提供包含至少一种含铝金属络合物的液体制剂，（e）将该制剂施用到在步骤（c）之后获得的硅层和然后（f）通过引入电磁和/或热能来加热在步骤（e）之后获得的涂层，其将在步骤（d）之后获得的制剂至少分解成金属和氢，然后（g）冷却步骤（f）获得Al掺杂或Al和金属掺杂的硅层，可以通过该方法获得的掺杂硅层及其用于生产光敏元件和电子元件的用途。

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