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1. 发明授权

US06890605B2 Method of film formation, insulating film, and substrate for semiconductor 有权
标题翻译：成膜方法，绝缘膜和半导体用基板
公开(公告)号：US06890605B2
公开(公告)日：2005-05-10
申请号：US10252607
申请日：2002-09-24
申请人： Michinori Nishikawa , Manabu Sekiguchi , Matthias Patz , Mutsuhiko Yoshioka , Atsushi Shiota , Kinji Yamada
发明人： Michinori Nishikawa , Manabu Sekiguchi , Matthias Patz , Mutsuhiko Yoshioka , Atsushi Shiota , Kinji Yamada
IPC分类号： C09D183/06 , C23C18/12 , H01L21/312 , B05D3/04 , B05D3/06 , H05H1/00
CPC分类号： H01L21/3122 , C23C18/04 , C23C18/1212 , C23C18/122 , H01L21/02126 , H01L21/0214 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02282 , H01L21/0234 , H01L21/02343 , H01L21/02348 , Y10T428/25 , Y10T428/259
摘要： An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising:(A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and(B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.
摘要翻译：提供了一种半导体用绝缘膜，其与通过CVD形成的膜具有优异的粘附性，并且可用作半导体器件等中的电介质膜。绝缘膜是通过以下方法获得的：（A）使基材经受（A-1）至少一种选自紫外线照射处理，氧等离子体处理，氮等离子体处理，氦等离子体处理，氩等离子体处理，氢等离子体处理和氨等离子体处理，以及（A-2）使用具有反应性基团的烷氧基硅烷化合物和水解和冷凝; 和（B）应用如上所述的包含有机溶剂和选自由通式（1）至（4）表示的化合物组成的组中的至少一种化合物中的任一种或两者的成膜用组合物的步骤，以及通过水解和冷凝至少一种化合物而获得的水解/缩合产物，并加热所得到的涂层。

2. 发明授权

US06824833B2 Stacked film, insulating film and substrate for semiconductor 失效
标题翻译：叠层膜，绝缘膜和半导体基板
公开(公告)号：US06824833B2
公开(公告)日：2004-11-30
申请号：US10255941
申请日：2002-09-27
申请人： Michinori Nishikawa , Manabu Sekiguchi , Matthias Patz , Atsushi Shiota , Kinji Yamada
发明人： Michinori Nishikawa , Manabu Sekiguchi , Matthias Patz , Atsushi Shiota , Kinji Yamada
IPC分类号： B05D302
CPC分类号： H01L21/02126 , C08G65/4068 , C09D183/14 , H01L21/312 , Y10T428/31533 , Y10T428/31663 , Y10T428/31667
摘要： A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.
摘要翻译：公开了一种用于半导体的叠层膜，其具有对例如半导体器件中的CVD工艺形成的涂膜具有优异的粘合性，具有堆叠膜的绝缘膜和使用绝缘膜的半导体衬底。层叠膜包含（A）碳含量为60重量％以上的有机化合物的膜，（B）通过加热通过水解缩合得到的水解缩合物而制备的膜，所述水解缩合物是通过水解缩合得到的，由上述通式（51）至（54）表示的具体化合物组成。

3. 发明授权

US06749944B2 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor 失效
标题翻译：叠层膜，层叠膜的形成方法，绝缘膜和半导体用基板
公开(公告)号：US06749944B2
公开(公告)日：2004-06-15
申请号：US10252606
申请日：2002-09-24
申请人： Michinori Nishikawa , Manabu Sekiguchi , Atsushi Shiota , Kinji Yamada
发明人： Michinori Nishikawa , Manabu Sekiguchi , Atsushi Shiota , Kinji Yamada
IPC分类号： B32B904
CPC分类号： B05D1/60 , B05D7/52 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/0214 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02282 , H01L21/3122 , Y10T428/24942 , Y10T428/31663
摘要： A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.
摘要翻译：叠层膜，制造层叠膜的方法，包括层叠膜的绝缘膜和使用绝缘膜的半导体用基板。叠层膜包含两个或更多种平均回转半径的差异为5nm以上的烷氧基硅烷水解缩合物的膜或介电常数为0.3以上的烷氧基硅烷水解缩合物的膜。通过涂布包含（B）平均回转半径为10nm以下的化合物的涂布溶液，然后涂布包含（A）平均半径为10的化合物的涂布溶液， 30nm，然后加热。叠层膜提供对CVD膜具有优异粘合性的电介质膜（半导体用基板）。

4. 发明授权

US06528605B1 Diyne-containing (co)polymer, processes for producing the same, and cured film 有权
标题翻译：含二炔（共）聚合物，其制备方法和固化膜
公开(公告)号：US06528605B1
公开(公告)日：2003-03-04
申请号：US09708016
申请日：2000-11-08
申请人： Toshiyuki Akiike , Matthias Patz , Masayuki Takahashi , Kohei Goto , Michinori Nishikawa , Takashi Okada , Kinji Yamada
发明人： Toshiyuki Akiike , Matthias Patz , Masayuki Takahashi , Kohei Goto , Michinori Nishikawa , Takashi Okada , Kinji Yamada
IPC分类号： C08F3800
CPC分类号： C08G61/00 , C08G61/02
摘要： A diyne-containing (co)polymer which is soluble in organic solvents, has excellent processability, and gives a cured coating film excellent in heat resistance, solvent resistance, and low-dielectric characteristics, and mechanical strength; processes for producing the same; and a cured film. The diyne-containing (co)polymer contains at least 10 mol % repeating units represented by the following formula (1) and has a weight-average molecular weight of from 500 to 1,000,000: &Brketopenst;C≡C&Parenopenst;Y&Parenclosest;nC≡C—Ar&Brketclosest; (1) wherein Y represents a specific bivalent organic group; Ar represents a bivalent organic group; and n represents 1.
摘要翻译：可溶于有机溶剂的二炔（co）聚合物具有优异的加工性能，并且提供耐热性，耐溶剂性和低介电特性以及机械强度优异的固化涂膜; 制造方法; 和固化膜。含二炔（共）聚合物含有至少10摩尔％的由下式（1）表示的重复单元，其重均分子量为500至1,000,000：其中Y表示特定的二价有机基团; Ar表示二价有机基团; n表示1。

5. 发明授权

US06800330B2 Composition for film formation, method of film formation, and silica-based film 失效
标题翻译：用于成膜的成分，成膜方法和二氧化硅基膜
公开(公告)号：US06800330B2
公开(公告)日：2004-10-05
申请号：US10103996
申请日：2002-03-25
申请人： Eiji Hayashi , Michinori Nishikawa , Atsushi Shiota , Kinji Yamada
发明人： Eiji Hayashi , Michinori Nishikawa , Atsushi Shiota , Kinji Yamada
IPC分类号： B05D512
CPC分类号： H01L21/02126 , C09D183/04 , C09D183/14 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： A composition for film formation capable of forming a silica-based coating film having low water absorption and dielectric constant of 2.1 or lower and useful as an interlayer insulating film material in semiconductor devices, etc. The composition contains: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by formula (1), compounds represented by formula (2), and compounds represented by formula (3) in the presence of a basic catalyst and water, RaSi(OR1)4−a (1) wherein R represents a hydrogen atom, a fluorine atom, or a monovalent organic group, R1 represents a monovalent organic group, and a is an integer of 1 or 2, Si(OR2)4 (2) wherein R2 represents a monovalent organic group, R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c (3) wherein R3 to R6 may be the same or different and each represents a monovalent organic group, b and c may be the same or different and each is a number of 0 to 2, R7 represents an oxygen atom, a phenylene group, or a group represented by —(CH2)n—, wherein n is an integer of 1 to 6, and d is 0 or 1; (B) a compound compatible with or dispersible in ingredient (A) and having a boiling point or decomposition temperature of from 250 to 450° C.; and (C) an organic solvent.
摘要翻译：用于形成能够形成低吸水性和介电常数为2.1以下并且用作半导体装置中的层间绝缘膜材料的二氧化硅系涂膜的成膜用组合物等。该组合物含有：（A）水解产物和通过水解和缩合在式（1）表示的化合物，式（2）表示的化合物和式（3）表示的化合物中的至少一种硅烷化合物在碱性催化剂存在下水解和缩合得到的缩合物，和水，其中R表示氢原子，氟原子或一价有机基团，R 1表示一价有机基团，a为1或2的整数，其中R 2表示一价有机基团，其中R 3至R 6可以相同或不同，并且各自表示一价有机基团，b和c可以相同或不同，并且各自为0至2的数，R 7表示氧原子，亚苯基，或由 - （CH 2）n - 表示的基团，其中n为1至6的整数，d为0或1; （B）与成分（A）相容或分散且沸点或分解温度为250-450℃的化合物; 和（C）有机溶剂。

6. 发明授权

US06787193B2 Method for the formation of silica film, silica film, insulating film, and semiconductor device 失效
标题翻译：形成二氧化硅膜，二氧化硅膜，绝缘膜和半导体器件的方法
公开(公告)号：US06787193B2
公开(公告)日：2004-09-07
申请号：US10165324
申请日：2002-06-10
申请人： Eiji Hayashi , Atsushi Shiota , Michinori Nishikawa , Kinji Yamada
发明人： Eiji Hayashi , Atsushi Shiota , Michinori Nishikawa , Kinji Yamada
IPC分类号： B32B1800
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02216 , H01L21/02282 , H01L21/02343 , H01L21/31133 , H01L21/31138 , H01L21/3122 , H01L21/31695 , Y02P20/544 , Y10T428/31663
摘要： A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.
摘要翻译：一种形成二氧化硅膜的方法，其包括在超临界介质中处理膜，所述膜包含（A）硅氧烷化合物和（B）选自（B-1）中的至少一种，与具有或分散在成分（A）中，沸点或分解温度为150-500℃，和（B-2）表面活性剂。该二氧化硅膜的机械强度优异，介电常数为2.2以下，因此可用作半导体装置等的电介质膜。

7. 发明授权

US07153767B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing 有权
公开(公告)号：US07153767B2
公开(公告)日：2006-12-26
申请号：US10902008
申请日：2004-07-30
申请人： Michinori Nishikawa , Takashi Okada , Kinji Yamada
发明人： Michinori Nishikawa , Takashi Okada , Kinji Yamada
IPC分类号： H01L21/302
CPC分类号： B24B37/005 , B24B37/015 , B24B37/042 , C08L71/00 , C09D171/00 , H01L21/3212 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/7684 , Y10T428/31692
摘要： A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.

8. 发明授权

US07128976B2 Composition for film formation, method of film formation, and silica-based film 有权
公开(公告)号：US07128976B2
公开(公告)日：2006-10-31
申请号：US10269967
申请日：2002-10-15
申请人： Eiji Hayashi , Kouichi Hasegawa , Youngsoo Seo , Michinori Nishikawa , Kinji Yamada
发明人： Eiji Hayashi , Kouichi Hasegawa , Youngsoo Seo , Michinori Nishikawa , Kinji Yamada
IPC分类号： B32B25/20
CPC分类号： H01L21/02126 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： A composition for film formation which comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by the formula (1), compounds represented by the formula (2), and compounds represented by the formula (3) in the presence of water and an ammonium compound, and (B) an organic solvent.

9. 发明授权

US06884862B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film 有权
标题翻译：聚合物，制造方法，含有其的成膜组合物，成膜方法和绝缘膜
公开(公告)号：US06884862B2
公开(公告)日：2005-04-26
申请号：US10128411
申请日：2002-04-24
申请人： Takashi Okada , Noriyasu Sinohara , Kaori Shirato , Masahiko Ebisawa , Michinori Nishikawa , Kinji Yamada
发明人： Takashi Okada , Noriyasu Sinohara , Kaori Shirato , Masahiko Ebisawa , Michinori Nishikawa , Kinji Yamada
IPC分类号： C08J5/18 , C08F38/02 , C08G61/00 , C08G61/02 , C08G61/12 , C09D165/00 , C09D201/00 , C08F38/00
CPC分类号： C08G61/02 , C08G61/12 , Y10T428/31855
摘要： a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties. The polymer has repeating units represented by the following general formula (1): wherein Z and Y are as defined hereinabove.
摘要翻译：用于成膜的组合物可以在短时间内固化并得到具有低介电常数和耐热性，粘合性和抗龟裂性优异的膜，用于该组合物的聚合物和该聚合物的制备方法。通过将具有特定重复单元的聚合物溶解在溶剂中制备的组合物具有优异的成膜性能。聚合物具有由以下通式（1）表示的重复单元：其中Z和Y如上所定义。

10. 发明授权

US06503633B2 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film 有权
标题翻译：用于成膜的组合物，用于制备成膜用组合物的方法，成膜方法和二氧化硅基膜
公开(公告)号：US06503633B2
公开(公告)日：2003-01-07
申请号：US09860914
申请日：2001-05-21
申请人： Michinori Nishikawa , Kouichi Hasegawa , Eiji Hayashi , Kinji Yamada
发明人： Michinori Nishikawa , Kouichi Hasegawa , Eiji Hayashi , Kinji Yamada
IPC分类号： C08G7716
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , Y10T428/31663
摘要： A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing (A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1), compounds represented by the following formula (2), and compounds represented by the following formula (3), and (A-2) at least one compound represented by the following formula (4), in the presence of a catalyst and water; and (B) an organic solvent.
摘要翻译：一种成膜用组合物，当用于半导体装置等的制造中时，即使在不同条件下固化而获得的介电常数几乎不相等且对基材的附着性优异，也可以制造出组合物和由该组合物获得的二氧化硅基膜。用于成膜的组合物包括：（A）通过水解和缩合获得的水解和缩合产物（A-1）至少一种选自由下式（1）表示的化合物的化合物，由下述式（2）表示的化合物和下述式（3）所示的化合物和（A-2）至少一种下述式（4）所示的化合物在催化剂和水的存在下反应; 和（B）有机溶剂。

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