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    • 1. 发明授权
    • Distributed feedback semiconductor laser
    • 分布式反馈半导体激光器
    • US06771681B2
    • 2004-08-03
    • US10190214
    • 2002-07-05
    • Dong-Soo BangDong-Hoon JangJong-In Shim
    • Dong-Soo BangDong-Hoon JangJong-In Shim
    • H01S3085
    • H01S5/06258H01S5/026H01S5/1215H01S5/20H01S5/50
    • A distributed feedback semiconductor laser and a method of manufacture includes first and second clad layers having predetermined refractive indexes that are formed on a semiconductor substrate. A guide layer propagates light between the first and second clad layers. An oscillating clad layer oscillates light at a predetermined wavelength and an amplifying clad layer amplifies the light with a predetermined gain between the first clad layer and the guide layer. The distributed feedback semiconductor laser is divided into a laser oscillation section including the oscillating clad layer and a laser amplification section including the amplifying active layer. First and second gratings are formed on the lower surface of the guide layer in the laser oscillation section and in the laser amplification section, respectively.
    • 分布式反馈半导体激光器和制造方法包括形成在半导体基板上的具有预定折射率的第一和第二覆层。 引导层在第一和第二覆盖层之间传播光。 振荡包层以预定波长振荡光,并且放大包层以第一包层和引导层之间的预定增益放大光。 分布式反馈半导体激光器被分为包括振荡包层的激光振荡部分和包括放大有源层的激光放大部分。 第一和第二光栅分别形成在激光振荡部分和激光放大部分中的引导层的下表面上。
    • 2. 发明授权
    • Wavelength locked integrated optical source structure using multiple microcavity
    • 波长锁定集成光源结构采用多个微腔
    • US06798799B2
    • 2004-09-28
    • US10095419
    • 2002-03-11
    • Dong-Hoon JangDong-Soo BangJung-Kee Lee
    • Dong-Hoon JangDong-Soo BangJung-Kee Lee
    • H01S304
    • H01S5/026H01S5/02252H01S5/0264H01S5/0687H01S5/1085H01S5/125
    • A wavelength-locked, integrated optical signal source structure using a semiconductor laser device is disclosed. The optical source structure has a semiconductor laser formed on a semiconductor substrate, and an etched portion coupled with an output end of the semiconductor laser. The etched portion is configured to pass on a first amount of light beam radiated by the semiconductor laser, and to reflect a second amount of light beam by a given reflection angle. A multiple microcavity is formed in a position spaced apart from the etched portion, and the first amount of light beam is incident upon the multiple microcavity. The optical source structure has a first optical detector for detecting the first amount of light beam passing through the multiple microcavity, and a second optical detector for detecting the second amount of light beam reflected by a slanted, reflecting surface portion of the etched portion. The relative change in the light intensity in the first and second optical detectors is measured out to maintain a constant optical wavelength.
    • 公开了一种使用半导体激光器件的波长锁定集成光信号源结构。 光源结构具有形成在半导体衬底上的半导体激光器和与半导体激光器的输出端耦合的蚀刻部分。 蚀刻部分被配置为通过由半导体激光器辐射的第一量光束并且以给定的反射角度反射第二量的光束。 多个微腔形成在与蚀刻部分间隔开的位置,并且第一量光束入射到多个微腔上。 光源结构具有用于检测通过多个微腔的第一光束量的第一光学检测器和用于检测被蚀刻部分的倾斜的反射表面部分反射的第二光束量的第二光学检测器。 测量第一和第二光学检测器中的光强度的相对变化以保持恒定的光学波长。
    • 10. 发明授权
    • Method for fabricating a planar buried heterostructure laser diode
    • 制造平面埋入异质结激光二极管的方法
    • US5665612A
    • 1997-09-09
    • US512224
    • 1995-08-07
    • Jung-Kee LeeDong-Hoon JangJeong-Soo KimKyung-Hyun Park
    • Jung-Kee LeeDong-Hoon JangJeong-Soo KimKyung-Hyun Park
    • H01S5/00H01S5/20H01S5/227H01S5/30H01S5/343H01L21/265
    • B82Y20/00H01S5/227H01S5/2081H01S5/2275H01S5/34306H01S5/34313
    • Disclosed is a method for fabricating a planar buried heterostructure laser diode, comprising the steps of sequentially forming a first clad layer, an undoped active layer and a second clad layer on a substrate so as to complete a first crystal growth; forming a patterned mask layer on the second clad layer; non-selectively etching the second clad layer, the active layer, the first clad layer and the substrate using the mask layer as an etching mask; selectively etching the substrate and the first and second layers; sequentially forming a first and second current blocking layers on a structure formed by the selective etching step so as to complete a second crystal growth; sequentially forming a third clad layer and an ohmic contact layer thereon after removal of the mask layer so as to complete a third crystal growth; and forming a first electrode on a rear surface of the substrate and forming a second electrode on a surface of the third clad layer. By the method, a leakage current induced in an interface between the active layer and the first current blocking layer provided therein can be reduced in proportion to a distance between the active layer and the second current blocking layer formed on the first current blocking layer, and therefore performance of the laser diode can be enhanced.
    • 公开了一种制造平面埋置异质结激光二极管的方法,包括以下步骤:在衬底上依次形成第一覆层,未掺杂有源层和第二覆层,以完成第一晶体生长; 在所述第二覆盖层上形成图案化掩模层; 使用掩模层作为蚀刻掩模,非选择性地蚀刻第二覆盖层,有源层,第一覆盖层和衬底; 选择性地蚀刻基板和第一和第二层; 在通过选择性蚀刻步骤形成的结构上依次形成第一和第二电流阻挡层,以完成第二晶体生长; 在除去掩模层之后依次形成第三覆层和欧姆接触层,以完成第三晶体生长; 以及在所述基板的后表面上形成第一电极,并在所述第三包覆层的表面上形成第二电极。 通过该方法,可以在有源层和其中设置的第一电流阻挡层之间的界面中感应的漏电流与形成在第一电流阻挡层上的有源层和第二电流阻挡层之间的距离成比例地减小,以及 因此可以提高激光二极管的性能。