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    • 10. 发明授权
    • Production of conductive metal silicide films from ultrafine powders
    • 从超细粉末制造导电金属硅化物薄膜
    • US4617237A
    • 1986-10-14
    • US609628
    • 1984-05-14
    • Arunava GuptaGary A. WestJames T. Yardley
    • Arunava GuptaGary A. WestJames T. Yardley
    • C04B41/87C23C24/08H01L21/28B05D3/06B05D5/12B32B9/04B32B19/00
    • C23C24/082H01L21/28097
    • A method of producing a thin film comprising a conductive metal silicide and the products produced therefrom are disclosed. The method is much less complex than methods employed in the prior art for producing conductive thin films and the method reduces substrate damage by maintaining processing temperatures at about 1,000.degree. C. or less. The process employs a stable suspension comprising ultrafine powders in a solvent. This suspension is deposited on a surface of a substrate and is subsequently heated to form a thin conductive film. The thin conductive film comprises polycrystalline metal silicide, preferably a refractory metal silicide, and may also contain silicon. Composites comprising the thin conductive films and a substrate are also disclosed. The process and products are particularly suited for use in VLSI and VVLSI production.
    • 公开了一种制造包含导电金属硅化物的薄膜及其产生的产品的方法。 该方法比用于制造导电薄膜的现有技术中使用的方法复杂得多,并且该方法通过将处理温度维持在约1000℃以下来降低基板损伤。 该方法采用在溶剂中包含超细粉末的稳定悬浮液。 将该悬浮液沉积在基材的表面上,随后被加热以形成薄的导电膜。 薄导电膜包括多晶金属硅化物,优选难熔金属硅化物,并且还可以含有硅。 还公开了包括薄导电膜和基底的复合材料。 该工艺和产品特别适用于VLSI和VVLSI生产。