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1. 发明授权

US12085751B2 Semiconductor device and methods of formation 有权
公开(公告)号：US12085751B2
公开(公告)日：2024-09-10
申请号：US17811381
申请日：2022-07-08
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Wei-kang Liu , Chih-Tsung Shih , Hau-Yan Lu , YingKit Felix Tsui , Lee-Shian Jeng
IPC分类号： G02B6/12 , G02B6/122 , G02B6/13 , G02B6/134 , G02B6/136
CPC分类号： G02B6/122 , G02B6/131 , G02B6/1347 , G02B6/136 , G02B2006/12061 , G02B2006/12126 , G02B2006/12169 , G02B2006/12173 , G02B6/1342
摘要： Some implementations described herein include a photonics integrated circuit device including a photonics structure. The photonics structure includes a waveguide structure and an optical attenuator structure. In some implementation, the optical attenuator structure is formed on an end region of the waveguide structure and includes a metal material or a doped material. In some implementations, the optical attenuator structure includes a gaussian doping profile within a portion of the waveguide structure. The optical attenuator structure may absorb electromagnetic waves at the end of the waveguide structure with an efficiency that is improved relative to a spiral optical attenuator structure or metal cap optical attenuator structure.

2. 发明授权

US11886019B2 Method of forming photonics structures 有权
公开(公告)号：US11886019B2
公开(公告)日：2024-01-30
申请号：US17816336
申请日：2022-07-29
申请人： Micron Technology, Inc.
发明人： Gurtej Sandhu
IPC分类号： H01L27/06 , H01L31/02 , G02B6/42 , G02B6/12 , G02B6/122 , H01L31/0232 , H01L31/18 , H01L21/324
CPC分类号： G02B6/42 , G02B6/122 , G02B6/12004 , H01L27/0617 , H01L31/02327 , H01L31/1864 , G02B2006/12061 , G02B2006/12142 , G02B2006/12169 , H01L21/324
摘要： The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.

3. 发明授权

US11796737B2 Co-manufacturing of silicon-on-insulator waveguides and silicon nitride waveguides for hybrid photonic integrated circuits 有权
公开(公告)号：US11796737B2
公开(公告)日：2023-10-24
申请号：US17177798
申请日：2021-02-17
申请人： GenXComm, Inc.
发明人： Brian Mattis , Taran Huffman , Bryan Woo , Thien-An Nguyen
IPC分类号： G02B6/136 , G02B6/12
CPC分类号： G02B6/136 , G02B2006/12061 , G02B2006/12097 , G02B2006/12169 , G02B2006/12188 , G02B2006/12197
摘要： A method of co-manufacturing silicon waveguides, SiN waveguides, and semiconductor structures in a photonic integrated circuit. A silicon waveguide structure can be formed using a suitable process, after which it is buried in a cladding. The cladding is polished, and a silicon nitride layer is disposed to define a silicon nitride waveguide. The silicon nitride waveguide is buried in a cladding, and annealed. Thereafter, cladding above the silicon waveguide structure can be trenched through, and low-temperature operations can be performed to or with an exposed surface of the silicon waveguide structure.

4. 发明公开

US20230258863A1 INTERFEROMETRIC INTEGRATED OPTICAL GYROSCOPES 审中-公开
公开(公告)号：US20230258863A1
公开(公告)日：2023-08-17
申请号：US18110989
申请日：2023-02-17
申请人： OSCPS MOTION SENSING INC.
发明人： Kazem ZANDI
IPC分类号： G02B6/122 , G01C19/64 , G02B6/136
CPC分类号： G02B6/122 , G01C19/64 , G02B6/136 , G02B2006/12169
摘要： An optical waveguide structure for an optical gyroscope, the structure including a substrate; at least a first silicon nitride waveguide loop and a second silicon nitride waveguide loop connected to the substrate, the first silicon nitride waveguide loop and the second silicon nitride waveguide being disposed at different vertical distances from the substrate; at least one vertical coupler optically coupling the first silicon nitride waveguide loop to the second silicon nitride waveguide; and a plurality of air cavities defined in material below the first and second silicon nitride waveguide loops, no air cavities being defined in regions immediately below a coupling region defined around the at least one vertical coupler.

5. 发明申请

US20160197111A1 INTEGRATED PHOTONICS INCLUDING GERMANIUM 有权
标题翻译：一体化光子包括德国
公开(公告)号：US20160197111A1
公开(公告)日：2016-07-07
申请号：US14987693
申请日：2016-01-04
申请人： The Research Foundation for the State University of New York
发明人： Douglas Coolbaugh , Thomas Adam , Gerald L. Leake
IPC分类号： H01L27/146 , H01L31/028
CPC分类号： G02B6/13 , G02B6/12002 , G02B6/132 , G02B6/1347 , G02B6/136 , G02B6/43 , G02B2006/121 , G02B2006/12104 , G02B2006/12123 , G02B2006/12169 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/2033 , H01L21/2053 , H01L27/14625 , H01L27/14629 , H01L31/022408 , H01L31/0232 , H01L31/02327 , H01L31/028 , H01L31/105 , H01L31/1808 , Y02E10/52 , Y02E10/547
摘要： A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
摘要翻译：光子结构可以在一个方面包括通过对适于传播光能的波导材料的图案化形成的一个或多个波导。这种波导材料可以包括硅（单晶，多晶或非晶）和氮化硅中的一种或多种。

6. 发明申请

US20160170139A1 Integrated Semiconductor Optical Coupler 有权
标题翻译：集成半导体光耦合器
公开(公告)号：US20160170139A1
公开(公告)日：2016-06-16
申请号：US14971466
申请日：2015-12-16
申请人： IMEC VZW
发明人： Philippe Absil , Shankar Kumar Selvaraja
IPC分类号： G02B6/12 , G02B6/132
CPC分类号： G02B6/12 , G02B6/13 , G02B6/132 , G02B6/136 , G02B2006/12038 , G02B2006/12061 , G02B2006/12169
摘要： A method for fabricating an integrated semiconductor photonics device is disclosed. The method may include providing a first substrate having on its top surface a monocrystalline semiconductor layer suitable for supporting an optical mode and forming a homogenous and conformal first dielectric layer on a planar surface of the monocrystalline semiconductor layer. The method may further include providing a dielectric waveguide core on the first dielectric layer, the dielectric waveguide core optically coupled to a first region of the monocrystalline semiconductor layer through the first dielectric layer. The method may further include depositing a second dielectric layer on the dielectric waveguide core, thereby covering the dielectric waveguide core, and annealing the substrate to drive hydrogen out of the dielectric waveguide core.
摘要翻译：公开了一种用于制造集成半导体光子学器件的方法。该方法可以包括提供第一衬底，其在其顶表面上具有适于支撑光学模式的单晶半导体层，并在单晶半导体层的平坦表面上形成均匀且适形的第一介电层。该方法可以进一步包括在第一电介质层上提供电介质波导芯，电介质波导芯通过第一介电层光耦合到单晶半导体层的第一区域。该方法还可以包括在电介质波导芯上沉积第二电介质层，从而覆盖电介质波导芯，并退火衬底以将氢驱出电介质波导芯。

7. 发明申请

US20150198775A1 METHOD OF FORMING PHOTONICS STRUCTURES 审中-公开
标题翻译：形成光子结构的方法
公开(公告)号：US20150198775A1
公开(公告)日：2015-07-16
申请号：US13600779
申请日：2012-08-31
申请人： Gurtej Sandhu
发明人： Gurtej Sandhu
IPC分类号： G02B6/42 , H01L31/18 , G02B6/122 , H01L31/0232
CPC分类号： G02B6/42 , G02B6/122 , G02B2006/12169 , H01L21/324 , H01L27/0617 , H01L31/02327 , H01L31/1864
摘要： The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.
摘要翻译：所公开的实施例涉及集成电路结构及其形成方法，其中光子器件形成在制造包含电子器件的CMOS半导体结构的后端。与光子器件相关联的掺杂区域使用微波退火形成掺杂剂激活。

8. 发明申请

US20140328741A1 Silicon Photonic Fiber and Method of Manufacture 有权
标题翻译：硅光子纤维及其制造方法
公开(公告)号：US20140328741A1
公开(公告)日：2014-11-06
申请号：US14333843
申请日：2014-07-17
申请人： Guifang Li , Fatih Yaman
发明人： Guifang Li , Fatih Yaman
IPC分类号： C01B33/023 , G02B6/10
CPC分类号： C01B33/023 , G02B6/02328 , G02B6/02361 , G02B6/102 , G02B2006/12061 , G02B2006/12169
摘要： Methods of converting silica to silicon and fabricating silicon photonic crystal fiber (PCF) are disclosed. Silicon photonic crystal fibers made by the fabrication methods are also disclosed. One fabrication method includes: sealing silica PCF and a quantity of magnesium within a container, the quantity of magnesium defined by 2Mg(g)+SiO2(s)->2MgO(s)+Si(s); converting silica PCF to a reacted PCF through magnesiothermic reduction; and converting the reacted PCF to the fabricated silicon PCF by selective dissolution of the reacted PCF in an acid. Another fabrication method includes: adding silica PCF and a quantity of solid magnesium to an unsealed container, the quantity of magnesium substantially in excess of that defined by 2Mg(g)+SiO2(s)->2MgO(s)+Si(s); converting silica PCF to a reacted PCF through magnesiothermic reduction; and converting the reacted PCF to the fabricated silicon PCF by selective dissolution of the reacted PCF in an acid.
摘要翻译：公开了将二氧化硅转化为硅并制造硅光子晶体光纤（PCF）的方法。还公开了通过制造方法制造的硅光子晶体光纤。一种制造方法包括：将二氧化硅PCF和一定量的镁密封在容器内，由2Mg（g）+ SiO 2（s）〜> 2MgO（s）+ Si（s）限定的镁的量; 通过氧化镁还原将二氧化硅PCF转化为反应的PCF; 并通过将反应的PCF选择性溶解在酸中将反应的PCF转化成制造的硅PCF。另一种制造方法包括：将二氧化硅PCF和一定量的固体镁添加到未密封的容器中，镁的量基本上超过由2Mg（g）+ SiO 2（s）>> 2MgO（s）+ Si ; 通过氧化镁还原将二氧化硅PCF转化为反应的PCF; 并通过将反应的PCF选择性溶解在酸中将反应的PCF转化成制造的硅PCF。

9. 发明授权

US07447410B2 CHG ring resonators 有权
标题翻译： CHG环形谐振器
公开(公告)号：US07447410B2
公开(公告)日：2008-11-04
申请号：US11487131
申请日：2006-07-14
申请人： Anuradha M. Agarwal , Juejun Hu , Lionel C. Kimerling
发明人： Anuradha M. Agarwal , Juejun Hu , Lionel C. Kimerling
IPC分类号： G02B6/10
CPC分类号： G02B6/122 , B82Y20/00 , G02B6/12007 , G02B6/1223 , G02B6/29338 , G02B6/29361 , G02B2006/12097 , G02B2006/12109 , G02B2006/12145 , G02B2006/12169 , G02F1/011 , G02F1/3515 , G02F2202/13 , G02F2203/15
摘要： A ring resonator structure includes a semiconductor substrate, a core, and a cladding. Either the core or the cladding comprises chalcogenide glass to improve electromagnetic confinement in the ring resonator structure.
摘要翻译：环形谐振器结构包括半导体衬底，芯和包层。芯或包层都包括硫族化物玻璃，以改善环形谐振器结构中的电磁限制。

10. 发明申请

US20080253728A1 Microphotonic waveguide including core/cladding interface layer 有权
标题翻译：微波导管包括芯/包层界面层
公开(公告)号：US20080253728A1
公开(公告)日：2008-10-16
申请号：US11899234
申请日：2007-09-05
申请人： Daniel K. Sparacin , Anuradha M. Agarwal , Pradip K. Roy , Lionel C. Kimerling
发明人： Daniel K. Sparacin , Anuradha M. Agarwal , Pradip K. Roy , Lionel C. Kimerling
IPC分类号： G02B6/10 , C03B37/022
CPC分类号： G02B6/132 , G02B6/122 , G02B6/1223 , G02B2006/12097 , G02B2006/121 , G02B2006/12169 , G02B2006/12176
摘要： The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.
摘要翻译：本发明提供一种具有波导芯的波导，波导芯具有纵向侧壁表面，纵向顶表面和设置在基底上的纵向底表面。界面层设置在波导芯的至少一个纵向侧壁表面上。至少在波导芯侧壁和顶表面上，在界面层上设置波导覆层。本发明的波导可以通过在基板上形成波导管下封层，然后在下封层上形成波导芯来制造。然后在波导芯的至少纵向侧壁表面上形成界面层，并且在该界面层上的纵向顶表面和波导芯的纵向侧壁表面上形成上覆层。

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