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1. 发明申请

US20060208215A1 METHOD FOR HAFNIUM NITRIDE DEPOSITION 失效
标题翻译：氮氧化物沉积方法
公开(公告)号：US20060208215A1
公开(公告)日：2006-09-21
申请号：US11420928
申请日：2006-05-30
申请人： Craig Metzner , Shreyas Kher , Yeong Kim , M. Rocklein , Steven George
发明人： Craig Metzner , Shreyas Kher , Yeong Kim , M. Rocklein , Steven George
IPC分类号： C04B35/00
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/45531 , H01L21/02148 , H01L21/02205 , H01L21/02208 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/318 , H01L29/513 , H01L29/517 , H01L29/518
摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.
摘要翻译：本发明通常是形成高k电介质层的方法，包括通过原子层沉积将铪化合物沉积到衬底上，包括将铪前体输送到衬底的表面，使铪前体反应并形成铪将含氮的前体输送到含铪层，形成至少一个铪氮键并将铪化合物沉积到表面。

2. 发明申请

US20060264067A1 SURFACE PRE-TREATMENT FOR ENHANCEMENT OF NUCLEATION OF HIGH DIELECTRIC CONSTANT MATERIALS 审中-公开
标题翻译：用于增强高介电常数材料的表面预处理
公开(公告)号：US20060264067A1
公开(公告)日：2006-11-23
申请号：US11456062
申请日：2006-07-06
申请人： Shreyas Kher , Shixue Han , Craig Metzner
发明人： Shreyas Kher , Shixue Han , Craig Metzner
IPC分类号： H01L21/31
CPC分类号： H01L21/02312 , C23C16/0218 , C23C16/0227 , C23C16/405 , C23C16/509 , C23C16/56 , H01L21/02148 , H01L21/02181 , H01L21/02304 , H01L21/02307 , H01L21/31604 , H01L21/31612 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31683
摘要： Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, pre-treating the surface of the substrate with a hydroxylating agent, and forming a high k dielectric layer over the surface of the substrate. One embodiment of a method of forming a hafnium containing layer over a substrate includes introducing an acid solution to a surface of a substrate, introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate, and forming a hafnium containing layer over the substrate.
摘要翻译：本发明的实施例涉及用于在基板上形成高k电介质材料的薄膜的表面处理。在衬底上形成高k电介质层的方法的一个实施例包括预清洁衬底的表面以去除天然氧化物，用羟基化剂预处理衬底的表面，以及形成高k电介质层衬底的表面。在衬底上形成含铪层的方法的一个实施方案包括将酸溶液引入衬底的表面，将含氢气体和含氧气体引入衬底的表面，并且形成含铪层底物。

3. 发明授权

US07547952B2 Method for hafnium nitride deposition 失效
标题翻译：氮化铪沉积方法
公开(公告)号：US07547952B2
公开(公告)日：2009-06-16
申请号：US11420928
申请日：2006-05-30
申请人： Craig Metzner , Shreyas Kher , Yeong Kwan Kim , M. Noel Rocklein , Steven M. George
发明人： Craig Metzner , Shreyas Kher , Yeong Kwan Kim , M. Noel Rocklein , Steven M. George
IPC分类号： H01L29/72 , H01L21/3205 , H01L21/4763 , H01L21/31 , H01L21/469 , H01L21/10 , H01L21/26
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/45531 , H01L21/02148 , H01L21/02205 , H01L21/02208 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/318 , H01L29/513 , H01L29/517 , H01L29/518
摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.
摘要翻译：本发明通常是形成高k电介质层的方法，包括通过原子层沉积将铪化合物沉积到衬底上，包括将铪前体输送到衬底的表面，使铪前体反应并形成铪将含氮的前体输送到含铪层，形成至少一个铪氮键并将铪化合物沉积到表面。

4. 发明申请

US20080044569A1 METHODS FOR ATOMIC LAYER DEPOSITION OF HAFNIUM-CONTAINING HIGH-K DIELECTRIC MATERIALS 失效
标题翻译：含铪高K介电材料的原子层沉积方法
公开(公告)号：US20080044569A1
公开(公告)日：2008-02-21
申请号：US11925681
申请日：2007-10-26
申请人： Nyi Myo , Kenric Cho , Shreyas Kher , Pravin Narwankar , Steve Poppe , Craig Metzner , Paul Deaten
发明人： Nyi Myo , Kenric Cho , Shreyas Kher , Pravin Narwankar , Steve Poppe , Craig Metzner , Paul Deaten
IPC分类号： C23C16/00
CPC分类号： C23C16/4488 , C23C16/0272 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/4412 , C23C16/45529 , C23C16/45531 , C23C16/45544 , C23C16/45582 , C23C16/56 , Y02T50/67 , Y10T137/0357 , Y10T137/0396 , Y10T137/2087
摘要： Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的方法。在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。腔室还包括至少一个管道，其连接到膨胀通道内的气体入口并且定位成提供在圆形方向（例如涡流，螺旋，螺旋或其衍生物）上的气体流过膨胀通道。膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

5. 发明申请

US20070059948A1 ALD METAL OXIDE DEPOSITION PROCESS USING DIRECT OXIDATION 失效
标题翻译：使用直接氧化的ALD金属氧化物沉积工艺
公开(公告)号：US20070059948A1
公开(公告)日：2007-03-15
申请号：US11421293
申请日：2006-05-31
申请人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
发明人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.
摘要翻译：本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。

6. 发明申请

US20060223339A1 ALD METAL OXIDE DEPOSITION PROCESS USING DIRECT OXIDATION 失效
标题翻译：使用直接氧化的ALD金属氧化物沉积工艺
公开(公告)号：US20060223339A1
公开(公告)日：2006-10-05
申请号：US11421283
申请日：2006-05-31
申请人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
发明人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.
摘要翻译：通过依次将金属有机化合物与臭氧一起或在远离等离子体室中形成的氧自由基或氮自由基反应而形成金属化合物如金属氧化物或金属氮化物的方法。当通过原子层沉积沉积至少10秒的循环时间时，金属化合物具有惊人的和显着改善的均匀性。当金属有机化合物在不存在溶剂或过量配体的过程条件下蒸发时，金属化合物也不含可检测的碳。

7. 发明申请

US20050271812A1 Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials 有权
标题翻译：含铪高k电介质原子层沉积的装置和方法
公开(公告)号：US20050271812A1
公开(公告)日：2005-12-08
申请号：US11127753
申请日：2005-05-12
申请人： Nyi Myo , Kenric Choi , Shreyas Kher , Pravin Narwankar , Steve Poppe , Craig Metzner , Paul Deaten
发明人： Nyi Myo , Kenric Choi , Shreyas Kher , Pravin Narwankar , Steve Poppe , Craig Metzner , Paul Deaten
IPC分类号： C23C16/00 , C23C16/02 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/56 , F22B1/00
CPC分类号： C23C16/4488 , C23C16/0272 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/4412 , C23C16/45529 , C23C16/45531 , C23C16/45544 , C23C16/45582 , C23C16/56 , Y02T50/67 , Y10T137/0357 , Y10T137/0396 , Y10T137/2087
摘要： Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的设备和方法。在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。腔室还包括至少一个导管，其连接到膨胀通道内的气体入口并且被定位成提供气流在圆周方向如涡流，螺旋线，螺旋线或其衍生物通过扩张通道。膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

8. 发明申请

US20050009371A1 System and method for forming a gate dielectric 失效
公开(公告)号：US20050009371A1
公开(公告)日：2005-01-13
申请号：US10913941
申请日：2004-08-06
申请人： Craig Metzner , Shreyas Kher , Shixue Han
发明人： Craig Metzner , Shreyas Kher , Shixue Han
IPC分类号： C23C16/02 , C23C16/40 , C23C16/56 , H01L21/316 , H01L21/469
CPC分类号： H01L21/02307 , C23C14/083 , C23C14/10 , C23C14/5806 , C23C14/5826 , C23C14/5853 , C23C14/586 , C23C16/0218 , C23C16/0227 , C23C16/405 , C23C16/56 , H01L21/02148 , H01L21/02181 , H01L21/022 , H01L21/02205 , H01L21/02271 , H01L21/02337 , H01L21/28194 , H01L21/3141 , H01L21/3143 , H01L21/31604 , H01L21/31612 , H01L21/3162 , H01L21/31645 , H01L21/31683 , H01L29/517 , H01L29/78
摘要： A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

9. 发明授权

US08524555B2 Susceptor with backside area of constant emissivity 有权
标题翻译：受体具有不断发射率的背面积
公开(公告)号：US08524555B2
公开(公告)日：2013-09-03
申请号：US13530238
申请日：2012-06-22
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： H01L21/8238
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：描述了用于提供感受器背面恒定发射率的方法和装置。提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

10. 发明申请

US20080274604A1 SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY 有权
标题翻译：具有不断发生的背景区域的障碍物
公开(公告)号：US20080274604A1
公开(公告)日：2008-11-06
申请号：US11744760
申请日：2007-05-04
申请人： Errol Sanchez , David Carlson , Craig Metzner
发明人： Errol Sanchez , David Carlson , Craig Metzner
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：提供了用于提供感受器背面恒定发射率的方法和装置。本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

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