专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060223339A1 ALD METAL OXIDE DEPOSITION PROCESS USING DIRECT OXIDATION 失效
标题翻译：使用直接氧化的ALD金属氧化物沉积工艺
公开(公告)号：US20060223339A1
公开(公告)日：2006-10-05
申请号：US11421283
申请日：2006-05-31
申请人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
发明人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.
摘要翻译：通过依次将金属有机化合物与臭氧一起或在远离等离子体室中形成的氧自由基或氮自由基反应而形成金属化合物如金属氧化物或金属氮化物的方法。当通过原子层沉积沉积至少10秒的循环时间时，金属化合物具有惊人的和显着改善的均匀性。当金属有机化合物在不存在溶剂或过量配体的过程条件下蒸发时，金属化合物也不含可检测的碳。

2. 发明申请

US20070059948A1 ALD METAL OXIDE DEPOSITION PROCESS USING DIRECT OXIDATION 失效
标题翻译：使用直接氧化的ALD金属氧化物沉积工艺
公开(公告)号：US20070059948A1
公开(公告)日：2007-03-15
申请号：US11421293
申请日：2006-05-31
申请人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
发明人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.
摘要翻译：本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。

3. 发明授权

US07569500B2 ALD metal oxide deposition process using direct oxidation 失效
标题翻译： ALD金属氧化物沉积工艺使用直接氧化
公开(公告)号：US07569500B2
公开(公告)日：2009-08-04
申请号：US11421283
申请日：2006-05-31
申请人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
发明人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.
摘要翻译：通过依次将金属有机化合物与臭氧一起或在远离等离子体室中形成的氧自由基或氮自由基反应而形成金属化合物如金属氧化物或金属氮化物的方法。当通过原子层沉积沉积至少10秒的循环时间时，金属化合物具有惊人的和显着改善的均匀性。当金属有机化合物在不存在溶剂或过量配体的过程条件下蒸发时，金属化合物也不含可检测的碳。

4. 发明授权

US07067439B2 ALD metal oxide deposition process using direct oxidation 有权
公开(公告)号：US07067439B2
公开(公告)日：2006-06-27
申请号：US10247103
申请日：2002-09-19
申请人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
发明人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.

5. 发明授权

US07569501B2 ALD metal oxide deposition process using direct oxidation 失效
标题翻译： ALD金属氧化物沉积工艺使用直接氧化
公开(公告)号：US07569501B2
公开(公告)日：2009-08-04
申请号：US11421293
申请日：2006-05-31
申请人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
发明人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.
摘要翻译：本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。

6. 发明申请

US20140078808A1 Embedded Nonvolatile Memory Elements Having Resistive Switching Characteristics 有权
标题翻译：具有电阻开关特性的嵌入式非易失性存储器元件
公开(公告)号：US20140078808A1
公开(公告)日：2014-03-20
申请号：US13621371
申请日：2012-09-17
申请人： Imran Hashim , Tony Chiang , Vidyut Gopal , Yun Wang
发明人： Imran Hashim , Tony Chiang , Vidyut Gopal , Yun Wang
IPC分类号： H01L27/24 , G11C11/21
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/0069 , G11C2213/32 , G11C2213/51 , G11C2213/52 , G11C2213/74 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected to a signal line.
摘要翻译：提供了各自包括电阻式开关层和电流控制元件的非易失性存储器组件。转向元件可以是与开关层串联连接的晶体管。由转向元件提供的电阻控制允许使用需要低开关电压和电流的开关层。包括这种开关层的存储器组件比例如需要高得多的开关电压的闪速存储器更容易嵌入到具有其它低电压组件（例如逻辑和数字信号处理组件）的集成电路芯片中。在一些实施例中，所提供的非易失性存储器组件在小于约3.0V的开关电压和小于50微安的相应电流下工作。存储元件可以包括设置在氮化钛电极和掺杂多晶硅电极之间的富含金属的氧化铪。一个电极可以连接到晶体管的漏极或源极，而另一个电极连接到信号线。

7. 发明申请

US20130228735A1 INTERFACIAL OXIDE USED AS SWITCHING LAYER IN A NONVOLATILE RESISTIVE MEMORY ELEMENT 有权
标题翻译：在非易失性存储元件中用作切换层的界面氧化物
公开(公告)号：US20130228735A1
公开(公告)日：2013-09-05
申请号：US13409436
申请日：2012-03-01
申请人： Randall Higuchi , Tony P. Chiang , Ryan Clarke , Vidyut Gopal , Imran Hashim , Robert Huertas , Yun Wang
发明人： Randall Higuchi , Tony P. Chiang , Ryan Clarke , Vidyut Gopal , Imran Hashim , Robert Huertas , Yun Wang
IPC分类号： H01L45/00 , H01L21/62
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/10 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1633
摘要： A nonvolatile resistive memory element includes a host oxide formed from an interfacial oxide layer. The interfacial oxide layer is formed on the surface of a deposited electrode layer via in situ or post-deposition surface oxidation treatments. The switching performance of a resistive memory device based on such an interfacial oxide layer is equivalent or superior to the performance of a conventional resistive memory element.
摘要翻译：非易失性电阻性存储元件包括由界面氧化物层形成的主体氧化物。界面氧化物层通过原位或沉积后表面氧化处理形成在沉积电极层的表面上。基于这样的界面氧化物层的电阻式存储器件的开关性能等同于或优于常规电阻式存储元件的性能。

8. 发明申请

US20130107604A1 Method for Forming Resistive Switching Memory Elements with Improved Switching Behavior 有权
标题翻译：用于形成具有改进的开关行为的电阻式开关存储元件的方法
公开(公告)号：US20130107604A1
公开(公告)日：2013-05-02
申请号：US13281777
申请日：2011-10-26
申请人： Yun Wang , Tony Chiang , Imran Hashim , Vidyut Gopal
发明人： Yun Wang , Tony Chiang , Imran Hashim , Vidyut Gopal
IPC分类号： G11C11/00 , G01N27/00 , H01L21/8239
CPC分类号： H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Methods for producing RRAM resistive switching elements having optimal switching behavior include crystalline phase structural changes. Structural changes indicative of optimal switching behavior include hafnium oxide phases in an interfacial region between a resistive switching layer and an electrode.
摘要翻译：具有最佳切换行为的RRAM电阻式开关元件的制造方法包括晶相结构变化。指示最佳切换行为的结构变化包括在电阻式开关层和电极之间的界面区域中的氧化铪相。

9. 发明授权

US07972962B2 Planarization method using hybrid oxide and polysilicon CMP 有权
标题翻译：使用混合氧化物和多晶硅CMP的平面化方法
公开(公告)号：US07972962B2
公开(公告)日：2011-07-05
申请号：US12887182
申请日：2010-09-21
申请人： David Matsumoto , Vidyut Gopal
发明人： David Matsumoto , Vidyut Gopal
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/76819
摘要： A method of planarizing a semiconductor device is provided. The semiconductor device includes a substrate, first and second components provided on the surface of the substrate, and a first material provided between and above the first and second components. The first component has a height greater than a height of the second component. The method includes performing a first polishing step on the semiconductor device to remove the first material above a top surface of the first component, to remove the first material above a top surface of the second component, and to level the top surface of the first component. The method also includes performing a second polishing step on the semiconductor device to planarize the top surfaces of the first and second components.
摘要翻译：提供了一种平面化半导体器件的方法。半导体器件包括衬底，设置在衬底的表面上的第一和第二组件以及设置在第一和第二组件之间和之上的第一材料。第一部件的高度大于第二部件的高度。该方法包括在半导体器件上执行第一抛光步骤以去除第一部件的顶表面上方的第一材料，以去除第二部件的顶表面上方的第一材料，并且使第一部件的顶表面平整。该方法还包括在半导体器件上执行第二抛光步骤以平坦化第一和第二部件的顶表面。

10. 发明授权

US06666979B2 Dry etch release of MEMS structures 失效
标题翻译： MEMS结构的干蚀刻释放
公开(公告)号：US06666979B2
公开(公告)日：2003-12-23
申请号：US10046593
申请日：2001-10-29
申请人： Jeffrey D. Chinn , Vidyut Gopal , Sofiane Soukane , Toi Yue Becky Leung
发明人： Jeffrey D. Chinn , Vidyut Gopal , Sofiane Soukane , Toi Yue Becky Leung
IPC分类号： H01L2100
CPC分类号： B81B3/0005 , B81B3/0008 , B81B2201/033 , B81C2201/016 , B81C2201/112
摘要： The present invention pertains to a method of fabricating a surface within a MEM which is free moving in response to stimulation. The free moving surface is fabricated in a series of steps which includes a release method, where release is accomplished by a plasmaless etching of a sacrificial layer material. An etch step is followed by a cleaning step in which by-products from the etch step are removed along with other contaminants which may lead to stiction. There are a series of etch and then clean steps so that a number of “cycles” of these steps are performed. Between each etch step and each clean step, the process chamber pressure is typically abruptly lowered, to create turbulence and aid in the removal of particulates which are evacuated from the structure surface and the process chamber by the pumping action during lowering of the chamber pressure. The final etch/clean cycle may be followed by a surface passivation step in which cleaned surfaces are passivated and/or coated.
摘要翻译：本发明涉及制造响应于刺激而自由移动的MEM内的表面的方法。自由移动表面是在一系列步骤中制造的，其包括释放方法，其中通过牺牲层材料的无质子蚀刻来实现释放。蚀刻步骤之后是清洁步骤，其中来自蚀刻步骤的副产物与可能导致静电的其它污染物一起被去除。存在一系列蚀刻然后清洁步骤，使得执行这些步骤的许多“循环”。在每个蚀刻步骤和每个清洁步骤之间，处理室压力通常突然降低，以产生湍流，并且有助于通过在降低腔室压力期间的泵送作用从结构表面和处理室排出的微粒去除。最终的蚀刻/清洁循环之后可以是表面钝化步骤，其中清洁的表面被钝化和/或涂覆。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式