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1. 发明申请

US20080274604A1 SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY 有权
标题翻译：具有不断发生的背景区域的障碍物
公开(公告)号：US20080274604A1
公开(公告)日：2008-11-06
申请号：US11744760
申请日：2007-05-04
申请人： Errol Sanchez , David Carlson , Craig Metzner
发明人： Errol Sanchez , David Carlson , Craig Metzner
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：提供了用于提供感受器背面恒定发射率的方法和装置。本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

2. 发明授权

US08524555B2 Susceptor with backside area of constant emissivity 有权
标题翻译：受体具有不断发射率的背面积
公开(公告)号：US08524555B2
公开(公告)日：2013-09-03
申请号：US13530238
申请日：2012-06-22
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： H01L21/8238
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：描述了用于提供感受器背面恒定发射率的方法和装置。提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

3. 发明申请

US20120282714A1 SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY 有权
标题翻译：具有不断发生的背景区域的障碍物
公开(公告)号：US20120282714A1
公开(公告)日：2012-11-08
申请号：US13530238
申请日：2012-06-22
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： H01L21/66
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：描述了用于提供感受器背面恒定发射率的方法和装置。提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

4. 发明授权

US08226770B2 Susceptor with backside area of constant emissivity 有权
标题翻译：受体具有不断发射率的背面积
公开(公告)号：US08226770B2
公开(公告)日：2012-07-24
申请号：US11744760
申请日：2007-05-04
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：提供了用于提供感受器背面恒定发射率的方法和装置。本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

5. 发明申请

US20080072820A1 MODULAR CVD EPI 300MM REACTOR 审中-公开
标题翻译：模块化CVD EPI 300MM反应器
公开(公告)号：US20080072820A1
公开(公告)日：2008-03-27
申请号：US11767619
申请日：2007-06-25
申请人： Brian Burrows , Craig Metzner , Dennis Demars , Roger Anderson , Juan Chacin , David Carlson , David Ishikawa , Jeffrey Campbell , Richard Collins , Keith Magill , Imran Afzal
发明人： Brian Burrows , Craig Metzner , Dennis Demars , Roger Anderson , Juan Chacin , David Carlson , David Ishikawa , Jeffrey Campbell , Richard Collins , Keith Magill , Imran Afzal
IPC分类号： B05C11/00
CPC分类号： H01L21/67115 , H01L21/67017 , H01L21/6719
摘要： The present invention provides methods and apparatus for processing semiconductor substrates. Particularly, the present invention provides a modular processing cell to be used in a cluster tool. The modular semiconductor processing cell of the present invention comprises a chamber having an inject cap, a gas panel module configured to supply one or more processing gas to the chamber through the inject cap, wherein the gas panel module is position adjacent the inject cap. The processing cell further comprises a lamp module positioned below the chamber. The lamp module comprises a plurality of vertically oriented lamps.
摘要翻译：本发明提供了半导体衬底的处理方法和装置。特别地，本发明提供了一种在群集工具中使用的模块化处理单元。本发明的模块化半导体处理单元包括具有注入盖的腔室，配置成通过喷射盖向腔室供应一种或多种处理气体的气体面板模块，其中气体面板模块位于与喷射盖相邻的位置。处理室还包括位于室下方的灯模块。灯模块包括多个垂直取向的灯。

6. 发明申请

US20080069951A1 Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects 有权
标题翻译：晶圆处理硬件用于外延沉积，减少了自动掺杂和背面缺陷
公开(公告)号：US20080069951A1
公开(公告)日：2008-03-20
申请号：US11521856
申请日：2006-09-15
申请人： Juan Chacin , Roger Anderson , Kailash Patalay , Craig Metzner
发明人： Juan Chacin , Roger Anderson , Kailash Patalay , Craig Metzner
IPC分类号： C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , H01L21/68728 , H01L21/68735
摘要： According to one aspect of the invention, an apparatus for reducing auto-doping of the front side of a substrate and reducing defects on the backside of the substrate during an epitaxial deposition process for forming an epitaxial layer on the front side of the substrate comprising: a means for forming a wafer gap region between the backside of the substrate and a susceptor plate, having an adjustable thickness; a means for ventilating auto-dopants out of the wafer gap region with a flow of inert gas, while inhibiting or prohibiting the flow of inert gas over the front side of the substrate; and a means for flowing reactant gases over the surface of the front side of the substrate, while inhibiting or prohibiting the flow of reactant gases near the surface of the backside of the substrate.
摘要翻译：根据本发明的一个方面，一种用于在衬底的前侧形成外延层的外延沉积工艺期间减少衬底的正面的自动掺杂并减少衬底背面的缺陷的装置，包括：用于在基板的背面和具有可调节厚度的基座板之间形成晶片间隙区域的装置; 一种用惰性气体流动自由掺杂剂离开晶片间隙区域的方法，同时抑制或阻止惰性气体流过衬底的前侧; 以及用于使反应气体流过衬底前表面的装置，同时抑制或禁止靠近衬底背面表面的反应气流。

7. 发明申请

US20070059948A1 ALD METAL OXIDE DEPOSITION PROCESS USING DIRECT OXIDATION 失效
标题翻译：使用直接氧化的ALD金属氧化物沉积工艺
公开(公告)号：US20070059948A1
公开(公告)日：2007-03-15
申请号：US11421293
申请日：2006-05-31
申请人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
发明人： Craig Metzner , Shreyas Kher , Vidyut Gopal , Shixue Han , Shankarram Athreya
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.
摘要翻译：本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。

8. 发明申请

US20090314205A1 SEMICONDUCTOR PROCESS CHAMBER VISION AND MONITORING SYSTEM 有权
标题翻译：半导体过程室视觉和监测系统
公开(公告)号：US20090314205A1
公开(公告)日：2009-12-24
申请号：US12144485
申请日：2008-06-23
申请人： Kailash K. Patalay , Craig Metzner , David K. Carlson
发明人： Kailash K. Patalay , Craig Metzner , David K. Carlson
IPC分类号： B05C11/00
CPC分类号： G02B23/2492
摘要： A system for monitoring a process inside a high temperature semiconductor process chamber by capturing images is disclosed. Images are captured through a borescope by a camera. The borescope is protected from high temperatures by a reflective sheath and an Infrared (IR) cur-off filter. Images can be viewed on a monitor and can be recorded by a video recording device. Images can also be processed by a machine vision system. The system can monitor the susceptor and a substrate on the susceptor and surrounding structures. Deviations from preferred geometries of the substrate and deviations from preferred positions of susceptor and the substrate can be detected. Actions based on the detections of deviations can be taken to improve the performance of the process. Illumination of a substrate by a laser for detecting deviations in substrate geometry and position is also disclosed.
摘要翻译：公开了一种用于通过捕获图像监视高温半导体处理室内的处理的系统。照相机通过管道镜捕获图像。通过反射护套和红外线（IR）截止滤波器，保护套管免受高温的影响。可以在监视器上观看图像，并且可以由视频记录装置记录。图像也可以由机器视觉系统处理。该系统可以监测基座和基座和周围的结构。可以检测到偏离衬底的优选几何形状和偏离基座和衬底的优选位置。可以采取基于偏差检测的操作来改善过程的性能。还公开了用于检测基板几何形状和位置的偏差的用于激光的衬底的照明。

9. 发明申请

US20070259112A1 GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION 有权
标题翻译：在外膜形成期间使用的气体歧管
公开(公告)号：US20070259112A1
公开(公告)日：2007-11-08
申请号：US11697516
申请日：2007-04-06
申请人： David Ishikawa , Craig Metzner , Ali Zojaji , Yihwan Kim , Arkadii Samoilov
发明人： David Ishikawa , Craig Metzner , Ali Zojaji , Yihwan Kim , Arkadii Samoilov
IPC分类号： C23C16/00 , C30B23/00 , C30B28/12
CPC分类号： C30B35/00 , C23C16/45561 , C30B25/14 , Y10T117/10
摘要： The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.
摘要翻译：本发明提供了用于外延膜形成的方法，系统和装置，其包括适于在衬底上形成外延层的外延腔; 适于将至少一个沉积气体和载气供应到所述外延室的沉积气体歧管; 以及与沉积气体歧管分开的蚀刻剂气体歧管，并且适于向外延室供应至少一种蚀刻剂气体和载气。公开了许多其他方面。

10. 发明申请

US20070077355A1 Film formation apparatus and methods including temperature and emissivity/pattern compensation 有权
标题翻译：成膜装置及方法，包括温度和发射率/图案补偿
公开(公告)号：US20070077355A1
公开(公告)日：2007-04-05
申请号：US11242298
申请日：2005-09-30
申请人： Juan Chacin , Aaron Hunter , Craig Metzner , Roger Anderson
发明人： Juan Chacin , Aaron Hunter , Craig Metzner , Roger Anderson
IPC分类号： C23C16/00
CPC分类号： C23C16/481 , C23C16/52
摘要： A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 across a number of zones, and at least one emissometer 410 for measuring the actual emissivity of the substrate 19. In another embodiment, a radiant heating system 313 is disposed under the substrate support 16. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 405, and the emissometer 410.
摘要翻译：成膜系统10具有由侧壁18和顶盖11限定的处理室15.在一个实施例中，顶盖11具有用于将辐射能量反射回到基板19上的反射表面13，用于测量温度穿过多个区域的基板19以及用于测量基板19的实际发射率的至少一个辐射计410。在另一个实施例中，辐射加热系统313设置在基板支撑件16的下方。基底19的温度由来自高温计405和em值计410的高温测量数据获得。

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