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1. 发明申请

US20120282714A1 SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY 有权
标题翻译：具有不断发生的背景区域的障碍物
公开(公告)号：US20120282714A1
公开(公告)日：2012-11-08
申请号：US13530238
申请日：2012-06-22
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： H01L21/66
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：描述了用于提供感受器背面恒定发射率的方法和装置。提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

2. 发明授权

US08226770B2 Susceptor with backside area of constant emissivity 有权
标题翻译：受体具有不断发射率的背面积
公开(公告)号：US08226770B2
公开(公告)日：2012-07-24
申请号：US11744760
申请日：2007-05-04
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：提供了用于提供感受器背面恒定发射率的方法和装置。本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

3. 发明授权

US08524555B2 Susceptor with backside area of constant emissivity 有权
标题翻译：受体具有不断发射率的背面积
公开(公告)号：US08524555B2
公开(公告)日：2013-09-03
申请号：US13530238
申请日：2012-06-22
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： H01L21/8238
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：描述了用于提供感受器背面恒定发射率的方法和装置。提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

4. 发明授权

US07718225B2 Method to control semiconductor film deposition characteristics 有权
标题翻译：控制半导体膜沉积特性的方法
公开(公告)号：US07718225B2
公开(公告)日：2010-05-18
申请号：US11205647
申请日：2005-08-17
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Methods are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated, and may be accomplished by actively keeping the temperature of a first wall of the reaction chamber above the temperature of a second wall during the film formation process.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法。腔表面的多于一部分可以被温度调节，并且可以通过在成膜过程中将反应室的第一壁的温度高于第二壁的温度来实现。

5. 发明授权

US07709391B2 Methods for in-situ generation of reactive etch and growth specie in film formation processes 有权
标题翻译：在膜形成过程中原位产生反应性蚀刻和生长物质的方法
公开(公告)号：US07709391B2
公开(公告)日：2010-05-04
申请号：US11336178
申请日：2006-01-20
申请人： Satheesh Kuppurao , David K. Carlson , Howard Beckford , Errol Sanchez
发明人： Satheesh Kuppurao , David K. Carlson , Howard Beckford , Errol Sanchez
IPC分类号： H01L21/302
CPC分类号： H01L21/02532 , C23C16/452 , C30B25/02 , C30B29/06 , H01L21/02529 , H01L21/0262 , H01L21/02636
摘要： Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.
摘要翻译：公开了用于在处理衬底的反应室中形成和利用亚稳态物质的方法和装置。亚稳态物质可用于原位蚀刻衬底表面，在衬底加工过程中沉积过程。

6. 发明申请

US20090211523A1 Apparatus to Control Semiconductor Film Deposition Characteristics 有权
标题翻译：控制半导体膜沉积特性的装置
公开(公告)号：US20090211523A1
公开(公告)日：2009-08-27
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： B05C11/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。腔表面的多于一个部分可以进行温度调制。

7. 发明申请

US20110155058A1 SUBSTRATE PROCESSING APPARATUS HAVING A RADIANT CAVITY 审中-公开
标题翻译：具有辐射空间的基板处理装置
公开(公告)号：US20110155058A1
公开(公告)日：2011-06-30
申请号：US12967576
申请日：2010-12-14
申请人： David K. Carlson , Errol Sanchez , Herman Diniz , Satheesh Kuppurao
发明人： David K. Carlson , Errol Sanchez , Herman Diniz , Satheesh Kuppurao
IPC分类号： B05C13/02 , C23C16/00
CPC分类号： H01L21/67115 , C23C16/46 , C23C16/52 , C30B25/105 , C30B25/12
摘要： Methods and apparatus for processing substrates are disclosed herein. In some embodiments, an apparatus for processing a substrate may include a substrate support having a base having a convex surface, an annular ring disposed on the base, and an edge ring disposed on the annular ring to support a substrate, wherein the base, annular ring, and edge ring form a radiant cavity capable of reflecting energy radiated from a backside of a substrate when disposed on the edge ring and wherein the backside of the substrate faces the convex surface of the base. Alternatively or in combination, in some embodiments, the base may include a metal layer encapsulated between a transparent non-metal upper layer and a non-metal lower layer.
摘要翻译：本文公开了处理衬底的方法和设备。在一些实施例中，用于处理衬底的装置可以包括具有底部的衬底支撑件，其具有凸形表面，设置在基座上的环形环和设置在环形环上以支撑衬底的边缘环，其中，环和边缘环形成辐射腔，其能够在布置在边缘环上时反射从衬底的背面辐射的能量，并且其中衬底的背面朝向基底的凸面。或者或组合地，在一些实施方案中，碱可以包括封装在透明非金属上层和非金属下层之间的金属层。

8. 发明授权

US08313804B2 Apparatus and methods for chemical vapor deposition 有权
标题翻译：化学气相沉积的装置和方法
公开(公告)号：US08313804B2
公开(公告)日：2012-11-20
申请号：US13109533
申请日：2011-05-17
申请人： David K. Carlson , Errol Sanchez , Satheesh Kuppurao
发明人： David K. Carlson , Errol Sanchez , Satheesh Kuppurao
IPC分类号： C23C16/44 , C23C16/448 , C23C16/38 , C23C16/30
CPC分类号： C23C16/4482
摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.
摘要翻译：公开了用于形成蒸发液体前体材料的方法和装置。方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。

9. 发明授权

US08991332B2 Apparatus to control semiconductor film deposition characteristics 有权
标题翻译：控制半导体膜沉积特性的装置
公开(公告)号：US08991332B2
公开(公告)日：2015-03-31
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： C23C16/46 , C23C16/52 , C23C16/44 , H01L21/67
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。腔表面的多于一个部分可以进行温度调制。

10. 发明授权

US08501600B2 Methods for depositing germanium-containing layers 有权
标题翻译：沉积含锗层的方法
公开(公告)号：US08501600B2
公开(公告)日：2013-08-06
申请号：US13189978
申请日：2011-07-25
申请人： Errol Sanchez , Yi-Chiau Huang , David K. Carlson
发明人： Errol Sanchez , Yi-Chiau Huang , David K. Carlson
IPC分类号： H01L21/00
CPC分类号： H01L21/02381 , H01L21/0237 , H01L21/02529 , H01L21/02532 , H01L21/02535 , H01L21/02573 , H01L21/0262
摘要： Methods for depositing germanium-containing layers on silicon-containing layers are provided herein. In some embodiments, a method may include depositing a first layer atop an upper surface of the silicon-containing layer, wherein the first layer comprises predominantly germanium (Ge) and further comprises a lattice adjustment element having a concentration selected to enhance electrical activity of dopant elements, wherein the dopant elements are disposed in at least one of the first layer or in an optional second layer deposited atop of the first layer, wherein the optional second layer, if present, comprises predominantly germanium (Ge). In some embodiments, the second layer is deposited atop the first layer. In some embodiments, the second layer comprises germanium (Ge) and dopant elements.
摘要翻译：本文提供了在含硅层上沉积含锗层的方法。在一些实施例中，一种方法可以包括沉积位于含硅层的上表面顶部的第一层，其中第一层主要包含锗（Ge），并且还包括具有选择以增强掺杂剂的电活性的浓度的晶格调节元件元素，其中所述掺杂剂元素设置在所述第一层中的至少一个中或沉积在所述第一层顶部的任选的第二层中，其中所述任选的第二层（如果存在）主要包含锗（Ge）。在一些实施例中，第二层沉积在第一层的顶部。在一些实施例中，第二层包括锗（Ge）和掺杂元素。

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