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    • 4. 发明授权
    • Multiple wavelength cavity ring down gas sensor
    • 多波长腔环形气体传感器
    • US08437000B2
    • 2013-05-07
    • US12825985
    • 2010-06-29
    • Barrett E. ColeTerry MartaJames Allen CoxFouad Nusseibeh
    • Barrett E. ColeTerry MartaJames Allen CoxFouad Nusseibeh
    • G01N21/00
    • G01N21/031G01N21/3151G01N21/3504G01N21/39
    • An illustrative cavity ring down gas sensor includes an optical cavity for receiving a gas to be detected and at least two electromagnetic radiation sources. The first electromagnetic radiation source may emit a first beam of light having a wavelength corresponding to an absorption wavelength of the gas to be detected, and the second electromagnetic radiation source may emit a second beam of light having a second wavelength that is off of an absorption wavelength of the gas to be detected. The first beam of light may detect a cavity ring down time decay, which is related to the concentration of the gas to be detected. The second beam of light may be used to detect a baseline cavity ring down time decay, which may be used to help increase the accuracy of the sensor by, for example, helping to compensate the concentration of the gas detected by the first beam of light for sensor variations caused by, for example, sensor age, temperature or pressure changes, and/or other conditions.
    • 示例性的空腔环形气体传感器包括用于接收要检测的气体和至少两个电磁辐射源的光学腔。 第一电磁辐射源可以发射具有对应于待检测气体的吸收波长的波长的第一光束,并且第二电磁辐射源可以发射具有不同于吸收的第二波长的第二光束 待检测气体的波长。 第一束光束可以检测到空腔环时间衰减,这与待检测气体的浓度有关。 第二光束可用于检测基线空腔衰减时间衰减,其可以用于通过例如有助于补偿由第一光束检测到的气体的浓度来增加传感器的精度 用于例如由传感器年龄,温度或压力变化引起的传感器变化和/或其他条件。
    • 5. 发明授权
    • Spectroscopy method and apparatus for detecting low concentration gases
    • 用于检测低浓度气体的光谱法和设备
    • US07612885B2
    • 2009-11-03
    • US11615617
    • 2006-12-22
    • Barrett E. ColeJames Allen CoxYuandong GuRodney H. Thorland
    • Barrett E. ColeJames Allen CoxYuandong GuRodney H. Thorland
    • G01N21/00
    • G01J3/02G01J3/021G01J3/027G01J3/0286G01J3/42G01N21/15G01N21/39G01N2021/151G01N2021/391
    • The invention is a method and apparatus capable of detecting constituents of a gas at extremely low concentrations comprising providing a medium that is absorbent of at least a first particular gas under a first environmental condition and desorbent of the particular gas under a second environmental condition, exposing the medium to a sample gas for a first period of time under the first environmental condition, during a second period of time after the first period of time, exposing the medium to the second environmental condition to cause the medium to desorb gas into an optical cavity of a cavity ring down spectrometer and introducing electromagnetic radiation into the cavity, during a third period of time after the second period of time, ceasing introduction of the electromagnetic radiation into the cavity and detecting the decay of the electromagnetic radiation in the cavity, and analyzing the decay of the light in the cavity to obtain a spectral analysis of the sample gas.
    • 本发明是能够以非常低的浓度检测气体的成分的方法和装置,其包括在第一环境条件下提供至少第一特定气体的吸收剂的介质和在第二环境条件下特定气体的解吸附剂 在第一环境条件下在第一时间段内的样品气体的介质,在第一时间段之后的第二时间段内,将介质暴露于第二环境条件,以使介质将气体解吸到光腔中 的腔环下光谱仪,并在第二时间段内的第三个时间段内将电磁辐射引入空腔,停止将电磁辐射引入空腔中,并检测腔内电磁辐射的衰减,并分析 在空腔中的光的衰减以获得样品气体的光谱分析。
    • 7. 发明申请
    • MULTIPLE WAVELENGTH CAVITY RING DOWN GAS SENSOR
    • 多波长环形环形气体传感器
    • US20110317164A1
    • 2011-12-29
    • US12825985
    • 2010-06-29
    • Barrett E. ColeTerry MartaJames Allen CoxFouad Nusseibeh
    • Barrett E. ColeTerry MartaJames Allen CoxFouad Nusseibeh
    • G01N21/31G01N21/00
    • G01N21/031G01N21/3151G01N21/3504G01N21/39
    • An illustrative cavity ring down gas sensor includes an optical cavity for receiving a gas to be detected and at least two electromagnetic radiation sources. The first electromagnetic radiation source may emit a first beam of light having a wavelength corresponding to an absorption wavelength of the gas to be detected, and the second electromagnetic radiation source may emit a second beam of light having a second wavelength that is off of an absorption wavelength of the gas to be detected. The first beam of light may detect a cavity ring down time decay, which is related to the concentration of the gas to be detected. The second beam of light may be used to detect a baseline cavity ring down time decay, which may be used to help increase the accuracy of the sensor by, for example, helping to compensate the concentration of the gas detected by the first beam of light for sensor variations caused by, for example, sensor age, temperature or pressure changes, and/or other conditions.
    • 示例性的空腔环形气体传感器包括用于接收要检测的气体和至少两个电磁辐射源的光学腔。 第一电磁辐射源可以发射具有对应于待检测气体的吸收波长的波长的第一光束,并且第二电磁辐射源可以发射具有不同于吸收的第二波长的第二光束 待检测气体的波长。 第一束光束可以检测到空腔环时间衰减,这与待检测气体的浓度有关。 第二光束可用于检测基线空腔衰减时间衰减,其可以用于通过例如有助于补偿由第一光束检测到的气体的浓度来增加传感器的精度 用于例如由传感器年龄,温度或压力变化引起的传感器变化和/或其他条件。
    • 8. 发明申请
    • HIGH REFLECTANCE TERAHERTZ MIRROR AND RELATED METHOD
    • 高反射TERAHERTZ镜和相关方法
    • US20100108891A1
    • 2010-05-06
    • US12261911
    • 2008-10-30
    • James Allen CoxRobert Higashi
    • James Allen CoxRobert Higashi
    • H01L31/0352H01L21/02G01J5/20
    • G01N21/3581G01N21/3504G02B5/0816H01S3/08059
    • A method includes forming a plurality of mirror periods, stacking the mirror periods, and bonding the mirror periods together to form a high reflectance mirror. At least one of the mirror periods is formed by bonding a first semiconductor layer to a first side of a film layer (where the film layer is formed on a second semiconductor layer), forming an opening through the second semiconductor layer to expose the film layer, and cutting through the first semiconductor layer, the film layer, and the second semiconductor layer. The first semiconductor layer could include a high resistivity silicon wafer, the film layer could include an oxide film, and the second semiconductor layer could include a silicon wafer. The high resistivity silicon wafer could be approximately 110 μm thick, and the silicon wafer could be approximately 125 μm thick. The opening through the second semiconductor layer could be 1.25 cm to 1.75 cm in width.
    • 一种方法包括形成多个反射镜周期,堆叠反射镜周期,以及将反射镜周期结合在一起以形成高反射镜。 通过将第一半导体层接合到膜层的第一侧(其中膜层形成在第二半导体层上)形成反射镜周期中的至少一个,通过第二半导体层形成开口以暴露膜层 并切割穿过第一半导体层,膜层和第二半导体层。 第一半导体层可以包括高电阻率硅晶片,膜层可以包括氧化物膜,并且第二半导体层可以包括硅晶片。 高电阻率硅晶片可以是大约110μm厚,并且硅晶片可以是大约125μm厚。 通过第二半导体层的开口的宽度可以为1.25cm至1.75cm。