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1. 发明申请

US20100108891A1 HIGH REFLECTANCE TERAHERTZ MIRROR AND RELATED METHOD 有权
标题翻译：高反射TERAHERTZ镜和相关方法
公开(公告)号：US20100108891A1
公开(公告)日：2010-05-06
申请号：US12261911
申请日：2008-10-30
申请人： James Allen Cox , Robert Higashi
发明人： James Allen Cox , Robert Higashi
IPC分类号： H01L31/0352 , H01L21/02 , G01J5/20
CPC分类号： G01N21/3581 , G01N21/3504 , G02B5/0816 , H01S3/08059
摘要： A method includes forming a plurality of mirror periods, stacking the mirror periods, and bonding the mirror periods together to form a high reflectance mirror. At least one of the mirror periods is formed by bonding a first semiconductor layer to a first side of a film layer (where the film layer is formed on a second semiconductor layer), forming an opening through the second semiconductor layer to expose the film layer, and cutting through the first semiconductor layer, the film layer, and the second semiconductor layer. The first semiconductor layer could include a high resistivity silicon wafer, the film layer could include an oxide film, and the second semiconductor layer could include a silicon wafer. The high resistivity silicon wafer could be approximately 110 μm thick, and the silicon wafer could be approximately 125 μm thick. The opening through the second semiconductor layer could be 1.25 cm to 1.75 cm in width.
摘要翻译：一种方法包括形成多个反射镜周期，堆叠反射镜周期，以及将反射镜周期结合在一起以形成高反射镜。通过将第一半导体层接合到膜层的第一侧（其中膜层形成在第二半导体层上）形成反射镜周期中的至少一个，通过第二半导体层形成开口以暴露膜层并切割穿过第一半导体层，膜层和第二半导体层。第一半导体层可以包括高电阻率硅晶片，膜层可以包括氧化物膜，并且第二半导体层可以包括硅晶片。高电阻率硅晶片可以是大约110μm厚，并且硅晶片可以是大约125μm厚。通过第二半导体层的开口的宽度可以为1.25cm至1.75cm。

2. 发明授权

US08198590B2 High reflectance terahertz mirror and related method 有权
标题翻译：高反射太赫镜及相关方法
公开(公告)号：US08198590B2
公开(公告)日：2012-06-12
申请号：US12261911
申请日：2008-10-30
申请人： James Allen Cox , Robert Higashi
发明人： James Allen Cox , Robert Higashi
IPC分类号： G01J5/02 , H01L21/00 , H01L21/76
CPC分类号： G01N21/3581 , G01N21/3504 , G02B5/0816 , H01S3/08059
摘要： A method includes forming a plurality of mirror periods, stacking the mirror periods, and bonding the mirror periods together to form a high reflectance mirror. At least one of the mirror periods is formed by bonding a first semiconductor layer to a first side of a film layer (where the film layer is formed on a second semiconductor layer), forming an opening through the second semiconductor layer to expose the film layer, and cutting through the first semiconductor layer, the film layer, and the second semiconductor layer. The first semiconductor layer could include a high resistivity silicon wafer, the film layer could include an oxide film, and the second semiconductor layer could include a silicon wafer. The high resistivity silicon wafer could be approximately 110 μm thick, and the silicon wafer could be approximately 125 μm thick. The opening through the second semiconductor layer could be 1.25 cm to 1.75 cm in width.
摘要翻译：一种方法包括形成多个反射镜周期，堆叠反射镜周期，以及将反射镜周期结合在一起以形成高反射镜。通过将第一半导体层接合到膜层的第一侧（其中在第二半导体层上形成膜层）形成反射镜周期中的至少一个，通过第二半导体层形成开口以暴露膜层并切割穿过第一半导体层，膜层和第二半导体层。第一半导体层可以包括高电阻率硅晶片，膜层可以包括氧化物膜，并且第二半导体层可以包括硅晶片。高电阻率硅晶片可以是大约110μm厚，并且硅晶片可以是大约125μm厚。通过第二半导体层的开口的宽度可以为1.25cm至1.75cm。

3. 发明授权

US09228903B2 Infrared imager 有权
标题翻译：红外成像仪
公开(公告)号：US09228903B2
公开(公告)日：2016-01-05
申请号：US13548779
申请日：2012-07-13
申请人： Barrett E. Cole , Robert Higashi , Yue Liu , Teresa M. Marta
发明人： Barrett E. Cole , Robert Higashi , Yue Liu , Teresa M. Marta
IPC分类号： G01J5/20 , G01J5/08 , H04N5/33 , G01J5/06 , G01J5/00
CPC分类号： G01J5/0803 , G01J5/061 , G01J5/08 , G01J5/0896 , G01J5/20 , G01J2005/0077 , G01J2005/063 , H04N5/33
摘要： Devices, methods, and systems relating to infrared imager devices, methods for providing infrared imagers, methods of operating infrared imagers, and infrared imager systems are disclosed. An infrared imager system includes a number of lenses, a beam splitter, an imager array, and a thermo-optical array, wherein the beam splitter directs light to the imaging array and to the thermo-optical array.
摘要翻译：公开了与红外成像设备相关的设备，方法和系统，用于提供红外成像器的方法，操作红外成像器的方法和红外成像器系统。红外成像系统包括多个透镜，分束器，成像器阵列和热光阵列，其中分束器将光引导到成像阵列和热光阵列。

4. 发明授权

US08314769B2 High performance detection pixel 有权
标题翻译：高性能检测像素
公开(公告)号：US08314769B2
公开(公告)日：2012-11-20
申请号：US12769097
申请日：2010-04-28
申请人： Barrett E. Cole , Robert Higashi
发明人： Barrett E. Cole , Robert Higashi
IPC分类号： G09G3/34 , G01J5/00
CPC分类号： G01J5/20 , G01J5/046 , G01J5/0809 , G01J5/0853
摘要： A pixel having a reflector situated on a substrate. A temperature sensitive resistor may be situated over at least a portion of the reflector. An insulator may be situated on the resistor. The resistor and insulator may effectively be very thin films. A flat metal mesh or grid may be situated on the insulator. The grid, insulator and resistor may be supported by two or more posts at approximately one-fourth of a wavelength from the reflector. The wavelength may be that of the radiation to be sensed by the pixel. The thermal mass of the combination of the temperature sensitive resistor, insulator and grid may be less than several times the thermal mass of the grid. Since the grid may be so thin for low noise performance and high sensitivity, the grid can have a flatness assured to a desired extent with stiffeners attached to portions of it.
摘要翻译：具有位于基板上的反射器的像素。温度敏感电阻器可以位于反射器的至少一部分上方。绝缘体可以位于电阻器上。电阻和绝缘体可能有效地是非常薄的薄膜。平面金属网或栅格可以位于绝缘体上。栅格，绝缘体和电阻器可以由距离反射器大约四分之一波长的两个或更多个柱支撑。波长可以是由像素感测的辐射的波长。温度敏感电阻，绝缘体和电网组合的热质量可能小于电网热质量的几倍。由于栅格可能如此薄以使低噪声性能和高灵敏度，因此栅格可以具有平坦度，并将其保持在希望的程度上，并具有附着于其部分的加强件。

5. 发明申请

US20120104521A1 METHOD AND SYSTEM FOR ETCHING A DIAPHRAGM PRESSURE SENSOR 有权
标题翻译：用于蚀刻压力传感器的方法和系统
公开(公告)号：US20120104521A1
公开(公告)日：2012-05-03
申请号：US12915356
申请日：2010-10-29
申请人： Robert Higashi
发明人： Robert Higashi
IPC分类号： H01L29/84 , H01L21/3065
CPC分类号： G01L9/0042 , G01L9/0054
摘要： A method for etching a diaphragm pressure sensor based on a hybrid anisotropic etching process. A substrate with an epitaxial etch stop layer can be etched utilizing an etching process in order to form a diaphragm at a selective portion of the substrate. The diaphragm can be oriented at an angle (e.g., 45 degree) with respect to the substrate in order to avoid an uncertain beveled portion in a stress/strain field of the diaphragm. The diaphragm can be further etched utilizing an etch finishing process to create an anisotropic edge portion on the major areas of the diaphragm and optimize the thickness and size of the diaphragm. Such an approach provides an enhanced diaphragm structure with respect to a wide range of pressure sensor applications.
摘要翻译：一种基于混合各向异性蚀刻工艺蚀刻隔膜压力传感器的方法。可以利用蚀刻工艺蚀刻具有外延蚀刻停止层的衬底，以在衬底的选择性部分形成隔膜。隔膜可以相对于基板成一定角度（例如45度），以避免隔膜的应力/应变场中的不确定的斜面部分。可以利用蚀刻精加工进一步蚀刻隔膜，以在隔膜的主要区域上产生各向异性边缘部分，并优化隔膜的厚度和尺寸。这种方法相对于宽范围的压力传感器应用提供了增强的膜结构。

6. 发明申请

US20070044554A1 Method of thermally coupling a flow tube or like component to a thermal sensor and sensor systems formed thereby 失效
标题翻译：将流管或类似部件热耦合到由此形成的热传感器和传感器系统的方法
公开(公告)号：US20070044554A1
公开(公告)日：2007-03-01
申请号：US11213556
申请日：2005-08-26
申请人： Robert Higashi , Ernest Satren
发明人： Robert Higashi , Ernest Satren
IPC分类号： H01C3/04
CPC分类号： G01F1/6845 , G01F1/6847 , H01L2224/81801 , Y10T29/49004
摘要： A method of thermally coupling a flow tube or like component to a thermal sensor comprises bonding the component to the thermal sensor such that thermally conductive portions formed on the component are thermally coupled to corresponding sensing/heating elements disposed on the thermal sensor. The method can be employed to form a capillary mass flow sensor system. Thermally conductive portions, such as metal bands, can be formed on the outer surface of a capillary tube for bonding with corresponding resistive heat sensing and heating elements disposed on the substrate of a micro mass flow sensor. Bonding metal pads can be formed on the sensor surface preparatory to solder bonding the tube metal bands to the resistive sensing and heating elements.
摘要翻译：将流管或类似部件热耦合到热传感器的方法包括将部件接合到热传感器，使得形成在部件上的导热部分热耦合到布置在热传感器上的对应的感测/加热元件。该方法可用于形成毛细管质量流量传感器系统。可以在毛细管的外表面上形成诸如金属带的导热部分，以与布置在微质量流量传感器的基底上的相应的电阻式热感测和加热元件接合。粘结金属焊盘可以形成在传感器表面上，准备将管金属带焊接到电阻感测和加热元件。

7. 发明申请

US20050255032A1 Nanotube sensor 有权
公开(公告)号：US20050255032A1
公开(公告)日：2005-11-17
申请号：US11151902
申请日：2005-06-14
申请人： Barrett Cole , Robert Higashi
发明人： Barrett Cole , Robert Higashi
IPC分类号： G01N27/00 , G01N27/414 , D01F9/12
CPC分类号： G01N27/4146 , Y10S977/953
摘要： A sensor having a nanotube grown on and supported by thermal bimorph structures. The nanotube rests on a heat sink during sensing gas or a liquid and is moved from the heat sink when the nanotube is heated to desorb gas or liquid from it. The heatsink may function as a gate along with the bimorph structures as the other terminals of a transistor. Current-voltage and current-gate voltage characteristics may be obtained of the nanotube as a device like a transistor. These characteristics may provide information on a gas or liquid absorbed by the nanotube.

8. 发明申请

US20140312230A1 INFRARED IMAGER 有权
标题翻译：红外成像
公开(公告)号：US20140312230A1
公开(公告)日：2014-10-23
申请号：US13548779
申请日：2012-07-13
申请人： Barrett E. Cole , Robert Higashi , Yue Liu , Teresa M. Marta
发明人： Barrett E. Cole , Robert Higashi , Yue Liu , Teresa M. Marta
IPC分类号： G01J5/08 , H04N5/357
CPC分类号： G01J5/0803 , G01J5/061 , G01J5/08 , G01J5/0896 , G01J5/20 , G01J2005/0077 , G01J2005/063 , H04N5/33
摘要： Devices, methods, and systems relating to infrared imager devices, methods for providing infrared imagers, methods of operating infrared imagers, and infrared imager systems are disclosed. An infrared imager system includes a number of lenses, a beam splitter, an imager array, and a thermo-optical array, wherein the beam splitter directs light to the imaging array and to the thermo-optical array.
摘要翻译：公开了与红外成像设备相关的设备，方法和系统，用于提供红外成像器的方法，操作红外成像器的方法和红外成像器系统。红外成像系统包括多个透镜，分束器，成像器阵列和热光阵列，其中分束器将光引导到成像阵列和热光阵列。

9. 发明授权

US08513091B2 Method for wafer bonding using gold and indium 有权
标题翻译：使用金和铟的晶圆接合方法
公开(公告)号：US08513091B2
公开(公告)日：2013-08-20
申请号：US12940773
申请日：2010-11-05
申请人： Robert Higashi , Karen M. Newstrom-Peitso , Jeff A. Ridley
发明人： Robert Higashi , Karen M. Newstrom-Peitso , Jeff A. Ridley
IPC分类号： H01L21/30
CPC分类号： H01L24/94 , H01L21/50 , H01L23/10 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/50 , H01L2224/13083 , H01L2224/13084 , H01L2224/13109 , H01L2224/13144 , H01L2224/13155 , H01L2224/13166 , H01L2224/16145 , H01L2224/16503 , H01L2224/32014 , H01L2224/81193 , H01L2224/81201 , H01L2224/81805 , H01L2224/8181 , H01L2224/94 , H01L2924/01006 , H01L2924/01033 , H01L2924/01049 , H01L2924/01061 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2224/83 , H01L2224/81 , H01L2924/00014
摘要： Devices, methods, and systems for wafer bonding are described herein. One or more embodiments include forming a bond between a first wafer and a second wafer using a first material adjacent the first wafer and a second material adjacent the second wafer. The first material includes a layer of gold (Au) and a layer of indium (In), and the second material includes a layer of Au. Forming the bond between the first wafer and the second wafer includes combining the layer of Au in the first material, the layer of In in the first material, and a portion of the layer of Au in the second material, wherein an additional portion of the layer of Au in the second material is not combined with the layer of Au in the first material and the layer of In in the first material.
摘要翻译：本文描述了用于晶片接合的装置，方法和系统。一个或多个实施例包括使用与第一晶片相邻的第一材料和与第二晶片相邻的第二材料在第一晶片和第二晶片之间形成结合。第一材料包括金（Au）层和铟（In）层，第二材料包括Au层。形成第一晶片和第二晶片之间的结合包括将第一材料中的Au层，第一材料中的In层和第二材料中的Au层的一部分组合，其中，第二材料中的Au层不与第一材料中的Au层和第一材料中的In层相结合。

10. 发明申请

US20090237320A1 TRANSDUCER FOR HIGH-FREQUENCY ANTENNA COUPLING AND RELATED APPARATUS AND METHOD 有权
标题翻译：高频天线耦合用传感器及相关装置及方法
公开(公告)号：US20090237320A1
公开(公告)日：2009-09-24
申请号：US12052419
申请日：2008-03-20
申请人： Robert Higashi , Fouad Nusseibeh
发明人： Robert Higashi , Fouad Nusseibeh
IPC分类号： H01Q1/50 , H01L21/02
CPC分类号： H01Q1/36 , H01L23/645 , H01L28/10 , H01L28/20 , H01L2924/0002 , H01Q1/521 , H01L2924/00
摘要： An apparatus includes an antenna having multiple conductive portions. The apparatus also includes a transducer electrically coupling the conductive portions of the antenna. The transducer includes a first conductive path electrically coupled to one of the conductive portions and a second conductive path electrically coupled to the first conductive path and to another of the conductive portions. The first and second conductive paths at least partially overlap along at least a substantial portion of their lengths, where the overlap occurs in a direction perpendicular to a plane of the antenna portions.
摘要翻译：一种装置包括具有多个导电部分的天线。该装置还包括电耦合天线的导电部分的换能器。换能器包括电耦合到导电部分之一的第一导电路径和电耦合到第一导电路径和另一个导电部分的第二导电路径。第一和第二导电路径沿其长度的至少大部分至少部分地重叠，其中重叠发生在垂直于天线部分的平面的方向上。

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