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1. 发明授权

US06927125B2 Interdigitated capacitor and method of manufacturing thereof 有权
标题翻译：交叉电容器及其制造方法
公开(公告)号：US06927125B2
公开(公告)日：2005-08-09
申请号：US10776752
申请日：2004-02-11
申请人： Christopher D. W. Jones , Donald W. Murphy , Yiu-Huen Wong
发明人： Christopher D. W. Jones , Donald W. Murphy , Yiu-Huen Wong
IPC分类号： H01L21/02 , H01L27/08 , H01L21/8242
CPC分类号： H01L28/91 , H01L27/0805
摘要： The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.
摘要翻译：本发明提供一种制造交错式半导体器件的方法。在一个实施例中，该方法包括同时在衬底上形成彼此相邻的第一电极，在第一电极之间形成电介质层，并在第一电极之间产生第二电极，第二电极与第一电极之间的电介质层接触从而形成相邻的叉指电极。还公开了一种叉指电容器和制造具有交叉指向电容器的集成电路的方法。

2. 发明授权

US06740922B2 Interdigitated capacitor and method of manufacturing thereof 有权
公开(公告)号：US06740922B2
公开(公告)日：2004-05-25
申请号：US09929188
申请日：2001-08-14
申请人： Christopher D. W. Jones , Donald W. Murphy , Yiu-Huen Wong
发明人： Christopher D. W. Jones , Donald W. Murphy , Yiu-Huen Wong
IPC分类号： H01L27108
CPC分类号： H01L28/91 , H01L27/0805
摘要： The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.

3. 发明授权

US06675450B1 Method of manufacturing and mounting electronic devices to limit the effects of parasitics 有权
标题翻译：制造和安装电子设备以限制寄生效应的方法
公开(公告)号：US06675450B1
公开(公告)日：2004-01-13
申请号：US09698175
申请日：2000-10-30
申请人： Linus Albert Fetter , Yiu-Huen Wong , Michael George Zierdt
发明人： Linus Albert Fetter , Yiu-Huen Wong , Michael George Zierdt
IPC分类号： H04R1700
CPC分类号： H03H9/172 , G01R31/2824 , H01L24/81 , H01L2224/8121 , H01L2224/81815 , H01L2924/01019 , H01L2924/14 , H03H3/02 , H03H9/02125 , Y10T29/42 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： A method of producing and mounting electronic devices to negate the effects of parasitics on device performance. In one aspect, the substrate surface of the device is coated with a thin, etch-resistant film during fabrication that acts as a barrier to allow removal of substrate material beneath the film, creating a suspended structure upon which the remaining layers of circuitry rest. Alternatively the device is made with a film that is integral to the device, and that acts as the supporting membrane. To mount the device on a carrier or package, solder bumps are applied near the ends of the conductors of the device, and the die is then secured to a carrier or package, and positioned so that leads extending from the conductors mate up with bonding strips on the carrier or package. The solder bumps are then reflowed or melted to establish electrical connection between leads of the device and corresponding bonding strips of the carrier. The resultant electronic device is essentially immune to the effects or parasitic capacitanaces and parasitic inductances, with the device as mounted being further configured so as to tune out any residual parasitics which may still exist after fabrication.
摘要翻译：一种制造和安装电子设备以消除寄生效应对设备性能的方法。在一个方面，在制造期间，器件的衬底表面涂覆有薄的耐蚀刻膜，其用作屏障以允许去除膜下方的衬底材料，产生悬挂结构，剩余的电路层在其上休息。或者，该装置由与装置成一体的膜制成，并且用作支撑膜。为了将器件安装在载体或封装上，在器件的导体的端部附近施加焊料凸块，然后将管芯固定到载体或封装上，并将其定位成使得从导体延伸的引线与接合条配合在载体或包装上。焊料凸块然后被回流或熔化，以在器件的引线和载体的相应接合条之间建立电连接。所得到的电子器件基本上免受影响或寄生电容和寄生电感的影响，安装的器件被进一步配置以便调出在制造之后仍然存在的任何残留寄生效应。

4. 发明授权

US06285324B1 Antenna package for a wireless communications device 有权
标题翻译：用于无线通信设备的天线封装
公开(公告)号：US06285324B1
公开(公告)日：2001-09-04
申请号：US09396948
申请日：1999-09-15
申请人： Ilya A. Korisch , Louis T. Manzione , Ming-Ju Tsai , Yiu-Huen Wong
发明人： Ilya A. Korisch , Louis T. Manzione , Ming-Ju Tsai , Yiu-Huen Wong
IPC分类号： H01Q302
CPC分类号： H01Q9/0421 , H01Q1/243 , H01Q9/0407
摘要： An antenna package for use in a wireless communications device. The package includes a metallic leadframe section having a plurality of leads and a paddle shaped as a planar antenna, and dielectric material encapsulating the paddle and portions of the leads.
摘要翻译：一种用于无线通信设备的天线包。该封装包括具有多个引线的金属引线框架部分和形成为平面天线的叶片，以及封装所述桨叶和所述引线的部分的电介质材料。

5. 发明授权

US5563979A Erbium-doped planar optical device 失效
标题翻译：铒掺杂平面光学器件
公开(公告)号：US5563979A
公开(公告)日：1996-10-08
申请号：US522012
申请日：1995-08-31
申请人： Allan J. Bruce , William H. Grodkiewicz , Gerald Nykolak , Joseph Shmulovich , Yiu-Huen Wong
发明人： Allan J. Bruce , William H. Grodkiewicz , Gerald Nykolak , Joseph Shmulovich , Yiu-Huen Wong
IPC分类号： G02B6/12 , G02B6/136 , G02F1/35 , G02F1/39 , H01S3/06 , H01S3/063 , H01S3/10 , H01S3/16 , G02B6/16 , H01S3/07
CPC分类号： G02B6/136 , H01S3/063 , G02B2006/12169 , H01S3/1608
摘要： An active optical device comprises a glass, waveguiding structure disposed on a substantially planar principal surface of a substrate. The structure includes a silica-based, erbium-doped active core. The active core has an absolute erbium concentration of at least about 0.5.times.10.sup.20 atoms per cubic centimeter, and a radiative lifetime of the erbium lasing level of at least about 5 milliseconds. The active core does not contain significant amounts of alkali metals or alkaline earth metals but does contain at least two modifier metals. Also disclosed is a method for forming an active optical device, including the step of depositing an erbium-doped active core by sputtering.
摘要翻译：有源光学器件包括设置在基板的基本平坦的主表面上的玻璃波导结构。该结构包括二氧化硅基铒掺杂活性核。活性核心的绝对铒浓度至少约为0.5×1020原子/立方厘米，铒激发光照射的寿命至少约为5毫秒。活性核不含有显着量的碱金属或碱土金属，但含有至少两种改性金属。还公开了一种用于形成有源光学器件的方法，包括通过溅射沉积铒掺杂的有源核的步骤。

6. 发明授权

US5526371A Pumping arrangements for arrays of planar optical devices 失效
公开(公告)号：US5526371A
公开(公告)日：1996-06-11
申请号：US372261
申请日：1995-01-13
申请人： Joseph Shmulovich , Yiu-Huen Wong
发明人： Joseph Shmulovich , Yiu-Huen Wong
IPC分类号： H01S3/06 , G02B6/12 , H01S3/063 , H01S3/094 , H01S3/10 , H01S3/16 , H01S3/23 , H01S3/091
CPC分类号： H01S3/063 , H01S3/094 , H01S3/1608 , H01S3/2383
摘要： Plural planar optical devices are simultaneously pumped by a single pumping source. Various arrangements for accomplishing such pumping are disclosed. By utilizing these arrangements, the topology and routing of integrated arrays including optical devices are simplified.

7. 发明授权

US5439782A Methods for making microstructures 失效
标题翻译：制作微结构的方法
公开(公告)号：US5439782A
公开(公告)日：1995-08-08
申请号：US165203
申请日：1993-12-13
申请人： William H. Haemmerle , William M. MacDonald , Casimir R. Nijander , Joseph Shmulovich , Wesley P. Townsend , Yiu-Huen Wong
发明人： William H. Haemmerle , William M. MacDonald , Casimir R. Nijander , Joseph Shmulovich , Wesley P. Townsend , Yiu-Huen Wong
IPC分类号： C23F4/00 , G02B6/122 , G02B6/13 , G02B6/30 , G02B6/12
CPC分类号： G02B6/1228 , G02B6/1221 , G02B6/305
摘要： Tapered optical waveguides (33') can be easily made by using photolithographic masking and etching to define on a substrate (21) a first polymer structure (22) having a substantially uniform thickness and a tapered width. The first polymer structure is heated sufficiently to form a meniscus along its entire length. The fluidity causes the material to redistribute itself such that, rather than being of uniform thickness, it has a thickness that varies with its width; consequently, the thickness as well as the width of the first polymer structure becomes tapered. The first polymer is cooled and hardened to form a second polymer structure (22') that has a tapered width and a tapered thickness as is desirable for a tapered optical waveguide. The second polymer structure itself can be used as a tapered optical waveguide, or it can be used to control the reactive ion etching of the underlying substrate. In the latter case, the configuration of the tapered second polymer structure is replicated in a glass substrate, for example, which then may be used as a glass tapered optical waveguide (33').
摘要翻译：锥形光波导（33'）可以通过使用光刻掩模和蚀刻来在衬底（21）上限定具有基本上均匀的厚度和锥形宽度的第一聚合物结构（22）来容易地制成。第一聚合物结构被充分加热以在整个长度上形成弯液面。流动性导致材料重新分布自身，使得不是具有均匀的厚度，而是具有随其宽度而变化的厚度; 因此，第一聚合物结构的厚度以及宽度变得逐渐变细。将第一聚合物冷却并硬化以形成第二聚合物结构（22'），其具有如锥形光波导所需的锥形宽度和锥形厚度。第二聚合物结构本身可以用作锥形光波导，或者可以用于控制底层基板的反应离子蚀刻。在后一种情况下，锥形第二聚合物结构的构造被复制在例如可用作玻璃锥形光波导（33'）的玻璃基板中。

8. 发明授权

US5119460A Erbium-doped planar optical device 失效
标题翻译：铒掺杂平面光学器件
公开(公告)号：US5119460A
公开(公告)日：1992-06-02
申请号：US691262
申请日：1991-04-25
申请人： Allan J. Bruce , Joseph Shmulovich , Amy Wong , Yiu-Huen Wong
发明人： Allan J. Bruce , Joseph Shmulovich , Amy Wong , Yiu-Huen Wong
IPC分类号： G02B6/12 , G02F1/35 , H01S3/06 , H01S3/063 , H01S3/16 , H01S3/17
CPC分类号： H01S3/063 , H01S3/1608
摘要： An active optical device comprises a glass, waveguiding structure disposed on a substantially planar principal surface of a substrate. The structure includes a silica-based, erbium-doped active core. The active core has an erbium-to-silicon atomic ratio of at least about 0.01, an absolute erbium concentration of at least about 1.4.times.10.sup.20 atoms per cubic centimeter, and a radiative lifetime of the erbium lasing level of at least about 7 milliseconds. Also disclosed is a method for forming an active optical device, including the step of depositing an erbium-doped active core by sputtering.

9. 发明申请

US20080028584A1 INCREMENTAL TUNING PROCESS FOR ELECTRICAL RESONATORS BASED ON MECHANICAL MOTION 有权
标题翻译：基于机械运动的电动共振器增益调谐过程
公开(公告)号：US20080028584A1
公开(公告)日：2008-02-07
申请号：US11869997
申请日：2007-10-10
申请人： Bradley Barber , Yiu-Huen Wong
发明人： Bradley Barber , Yiu-Huen Wong
IPC分类号： H04R17/10
CPC分类号： H03H9/131 , G04F5/063 , H03H3/04 , H03H9/175 , H03H2003/0428 , H04R15/02 , H04R17/10 , H04R31/00 , Y10S29/016 , Y10T29/42 , Y10T29/435 , Y10T29/49004 , Y10T29/49005
摘要： The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.
摘要翻译：本发明是一种用于调节机械谐振器的谐振频率的方法，该机械谐振器的频率取决于整个谐振器厚度。使用交替选择性蚀刻来从顶部电极去除不同的调节层。其中一个电极由多个堆叠的调整层构成，每个层都具有与任何相邻的调整层不同的蚀刻特性。同样的发明的一部分也是一种共振器结构，其中至少一个电极具有与任何相邻的调整层具有不同蚀刻性能的材料的多个堆叠层，并且每个层的厚度对应于计算出的谐振器的谐振频率。

10. 发明授权

US06674291B1 Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom 有权
标题翻译：用于确定和/或改善薄膜谐振器装置中的高功率可靠性的方法和装置，以及由此产生的薄膜谐振器装置
公开(公告)号：US06674291B1
公开(公告)日：2004-01-06
申请号：US09669681
申请日：2000-09-26
申请人： Bradley Paul Barber , Peter Ledel Gammel , Juan A. Herbsommer , Hugo F. Safar , Yiu-Huen Wong
发明人： Bradley Paul Barber , Peter Ledel Gammel , Juan A. Herbsommer , Hugo F. Safar , Yiu-Huen Wong
IPC分类号： G01R2702
CPC分类号： H03H9/172 , G01R31/2824 , H01L24/81 , H01L2224/8121 , H01L2224/81815 , H01L2924/01019 , H01L2924/14 , H03H3/02 , H03H9/02125 , Y10T29/42 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device. The TFR device with the modified electrode structure can operate at higher power levels and has a longer operational lifetime than what is currently available.
摘要翻译：已经显示电迁移的影响导致仅在几个小时内对诸如薄膜谐振器（TFR）器件的电子器件的金属电极的损坏，用于在这些器件的工作范围内的测试输入功率。已经确定这种故障对输入功率的频率敏感。本发明提供一种用于确定电子设备中的高功率可靠性的方法和装置，以便能够准确地确定电子设备的故障时间，并因此能够预测寿命。作为用于测试设备的方法的一部分，该确定与施加到电子设备的输入功率的频率无关。基于上述结果，已经开发了一种TFR器件，其包括保护或电迁移减少层，例如钛沉积在器件的电极上。具有改进的电极结构的TFR器件可以在更高的功率水平下工作，并且具有比目前可用的更长的工作寿命。

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