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1. 发明公开

US20240120903A1 SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND PRODUCING METHOD THEREOF 审中-公开
公开(公告)号：US20240120903A1
公开(公告)日：2024-04-11
申请号：US18222532
申请日：2023-07-17
申请人： Suzhou HunterSun Electronics Co., Ltd.
发明人： Hairui LIU , Zhiguo LAI , Qinghua YANG
IPC分类号： H03H9/54 , H03H9/02 , H03H9/05
CPC分类号： H03H9/542 , H03H9/02125 , H03H9/0514
摘要： A semiconductor device including a first functional module arranged on a first substrate and having a chip, an electrical connection component and a sealing ring, where the sealing ring surrounds the chip, and the chip is electrically connected to the electrical connection component; a second functional module having a packaging substrate, where the packaging substrate includes at least two metal layers and a dielectrical layer between the metal layers; a third functional module having multiple redistribution lines and multiple micro through holes for electrical connection between the first functional module and the second functional module, where the electrical connection component in the first functional module is electrically connected to the third functional module; and a second substrate, where the second substrate is sealed with the first substrate.

2. 发明授权

US10615774B2 Elastic wave device and manufacturing method therefor 有权
公开(公告)号：US10615774B2
公开(公告)日：2020-04-07
申请号：US15456651
申请日：2017-03-13
申请人： Murata Manufacturing Co., Ltd.
发明人： Masashi Omura
IPC分类号： H03H9/25 , H03H9/02 , H03H9/56 , H03H3/08 , H03H9/145 , H03H9/64
CPC分类号： H03H9/25 , H03H3/08 , H03H9/02125 , H03H9/02228 , H03H9/02952 , H03H9/14502 , H03H9/568 , H03H9/6483
摘要： In an elastic wave device, a piezoelectric substrate is stacked on a support substrate and an IDT electrode is provided on the piezoelectric substrate. Wiring line portions are provided on the piezoelectric substrate. A first hollow portion is provided in the support substrate at least below at least one of the wiring line portions and or below a region between the wiring line portions.

3. 发明申请

US20170310303A1 BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURE 审中-公开
公开(公告)号：US20170310303A1
公开(公告)日：2017-10-26
申请号：US15135254
申请日：2016-04-21
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Robert Thalhammer , Alexandre Shirakawa , Thomas Faust , Phil Nikkel
IPC分类号： H03H9/58
CPC分类号： H03H9/02118 , H03H9/02102 , H03H9/02125 , H03H9/173 , H03H9/58 , H03H9/582
摘要： A bulk acoustic wave (BAW) resonator comprises: a first electrode; a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side; a piezoelectric layer disposed between the first and second electrodes, and an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the acoustic resonator; a bridge adjacent to a termination of the active area of the BAW resonator; and a discontinuity disposed in the bridge.

4. 发明授权

US07479685B2 Electronic device on substrate with cavity and mitigated parasitic leakage path 失效
标题翻译：衬底上的电子器件具有空腔和减轻的寄生泄漏路径
公开(公告)号：US07479685B2
公开(公告)日：2009-01-20
申请号：US11373434
申请日：2006-03-10
申请人： R. Shane Fazzio , Richard C. Ruby , Christopher P. Wade , Michael Louis Frank , David A. Feld
发明人： R. Shane Fazzio , Richard C. Ruby , Christopher P. Wade , Michael Louis Frank , David A. Feld
IPC分类号： H01L29/78
CPC分类号： H03H9/02118 , H03H3/02 , H03H9/02125 , H03H9/172
摘要： An electronic device. The electronic device includes a first electrode and a coating layer. The electronic device is fabricated on a substrate; the substrate has a cavity created in a top surface of the substrate; and the first electrode is electrically coupled to the substrate. The coating layer coats at least part of a substrate surface in the cavity, and the presence of the coating layer results in a mitigation of at least one parasitic leakage path between the first electrode and an additional electrode fabricated on the substrate.
摘要翻译：电子设备。电子器件包括第一电极和涂层。电子器件制造在衬底上; 衬底具有在衬底的顶表面中产生的空腔; 并且第一电极电耦合到衬底。涂层涂覆在空腔中的基底表面的至少一部分，并且涂层的存在导致在第一电极和在基底上制造的附加电极之间的至少一个寄生泄漏路径的减轻。

5. 发明申请

US20040183400A1 Piezoelectric resonator apparatus with acoustic reflector 有权
标题翻译：具有声反射器的压电谐振器
公开(公告)号：US20040183400A1
公开(公告)日：2004-09-23
申请号：US10750225
申请日：2003-12-31
申请人： Infineon Technologies AG
发明人： Robert Aigner , Lueder Elbrecht , Stephan Marksteiner , Hans-Joerg Timme
IPC分类号： H01L041/08
CPC分类号： H03H9/175 , H03H9/02125
摘要： A resonator apparatus has a piezoelectric resonator as well as an acoustic reflector which has a layer having a high acoustic impedance and a layer having a low acoustic impedance. The thickness of one layer is set different from a quarter of the wavelength in this layer at the operating frequency due to technological limitations in the manufacturing of this layer, and the thickness of the other layer is set dependent from the one layer, such that a predetermined minimum quality of the acoustic reflector is attained.
摘要翻译：谐振器装置具有压电谐振器以及具有高声阻抗层的声反射器和具有低声阻抗的层。由于该层的制造中的技术限制，一层的厚度在工作频率上与该层中的波长的四分之一不同，并且另一层的厚度取决于一层，使得实现声反射器的预定最小质量。

6. 发明申请

US20040163244A1 Method of manufacturing and mounting electronic devices to limit the effects of parasitics 审中-公开
标题翻译：制造和安装电子设备以限制寄生效应的方法
公开(公告)号：US20040163244A1
公开(公告)日：2004-08-26
申请号：US10742916
申请日：2003-12-23
申请人： Agere Systems Inc.
发明人： Linus Albert Fetter , Yin-Huen Wong , Michael George Zierdt
IPC分类号： H05K003/34
CPC分类号： H03H9/172 , G01R31/2824 , H01L24/81 , H01L2224/8121 , H01L2224/81815 , H01L2924/01019 , H01L2924/14 , H03H3/02 , H03H9/02125 , Y10T29/42 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： A method of producing and mounting electronic devices to negate the effects of parasitics on device performance. In one aspect, the substrate surface of the device is coated with a thin, etch-resistant film during fabrication that acts as a barrier to allow removal of substrate material beneath the film, creating a suspended structure upon which the remaining layers of circuitry rest. Alternatively the device is made with a film that is integral to the device, and that acts as the supporting membrane. To mount the device on a carrier or package, solder bumps are applied near the ends of the conductors of the device, and the die is then secured to a carrier or package, and positioned so that leads extending from the conductors mate up with bonding strips on the carrier or package. The solder bumps are then reflowed or melted to establish electrical connection between leads of the device and corresponding bonding strips of the carrier. The resultant electronic device is essentially immune to the effects or parasitic capacitances and parasitic inductances, with the device as mounted being further configured so as to tune out any residual parasitics which may still exist after fabrication.
摘要翻译：一种制造和安装电子设备以消除寄生效应对设备性能的方法。在一个方面，在制造期间，器件的衬底表面涂覆有薄的耐蚀刻膜，其用作屏障以允许去除膜下方的衬底材料，产生悬挂结构，剩余的电路层在其上休息。或者，该装置由与装置成一体的膜制成，并且用作支撑膜。为了将器件安装在载体或封装上，焊料凸块在器件的导体的端部附近施加，然后将管芯固定到载体或封装上，并将其定位成使得从导体延伸的引线与接合条匹配在载体或包装上。焊料凸块然后被回流或熔化，以在器件的引线和载体的相应接合条之间建立电连接。所得到的电子器件基本上免受影响或寄生电容和寄生电感的影响，安装的器件被进一步配置以便调出在制造之后可能仍然存在的任何残留寄生效应。

7. 发明授权

US06377137B1 Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness 有权
标题翻译：声谐振器滤波器，由于芯片基板的厚度而降低了电磁影响
公开(公告)号：US06377137B1
公开(公告)日：2002-04-23
申请号：US09659254
申请日：2000-09-11
申请人： Richard C. Ruby
发明人： Richard C. Ruby
IPC分类号： H03H954
CPC分类号： H03H9/02125 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/16195 , H03H3/02 , H03H9/1014 , H03H9/564 , H03H2003/021 , Y10S438/959 , Y10T29/42 , H01L2924/00014
摘要： A plurality of acoustic resonators are manufactured in a batch process by forming cavities in a substrate and filling the cavities with a sacrificial layer. An FBAR membrane comprising a bottom electrode, a piezoelectric layer, and a top electrode is formed over each cavity and the sacrificial layer. The substrate is then thinned and the substrate is separated into a plurality of dice using a scribe and break process. The sacrificial layer is then removed and the FBAR filter is mounted in a package with thermal vias being thermal communication with underside of the FBAR filter. The production method improves thermal properties by increasing the efficiency of heat dissipation from the FBAR filter. In addition, electromagnetic interference is decreased by reducing the distance between a primary current flowing over the surface of the FBAR filter and an image current flowing in a ground plane beneath the FBAR filter.
摘要翻译：通过在衬底中形成空腔并用牺牲层填充空腔，以分批工艺制造多个声谐振器。在每个空腔和牺牲层上形成包括底电极，压电层和顶电极的FBAR膜。然后将基板变薄，并且使用划线和断裂工艺将基板分离成多个骰子。然后去除牺牲层，并且FBAR过滤器安装在具有与FBAR过滤器的下侧热连通的热通孔的封装中。该生产方法通过提高FBAR过滤器的散热效率来改善热性能。此外，通过减少在FBAR滤波器的表面上流过的初级电流与在FBAR滤波器下面的接地平面中流动的图像电流之间的距离减小电磁干扰。

8. 发明公开

US20240162878A1 ACOUSTIC WAVE DEVICE 审中-公开
公开(公告)号：US20240162878A1
公开(公告)日：2024-05-16
申请号：US18423452
申请日：2024-01-26
申请人： Murata Manufacturing Co., Ltd.
发明人： Yasumasa TANIGUCHI , Hideki IWAMOTO , Hiromu OKUNAGA
IPC分类号： H03H9/02
CPC分类号： H03H9/02125 , H03H9/02039 , H03H9/02228 , H03H9/02992
摘要： In an acoustic wave device, a first IDT electrode is provided on a first main surface of a piezoelectric film, and a second IDT electrode is provided on a second main surface of the piezoelectric film. A crystal c-axis of the piezoelectric film is tilted with respect to a direction normal to the first and second main surfaces. A direction of an electric field generated between a busbar of a comb-shaped electrode and end portions of electrode fingers facing the busbar in the first IDT electrode and a direction of an electric field generated between a busbar and end portions of electrode fingers facing the busbar in the second IDT electrode are opposite directions.

9. 发明授权

US11811385B2 Bulk acoustic wave component with conductor extending laterally from via 有权
公开(公告)号：US11811385B2
公开(公告)日：2023-11-07
申请号：US18047806
申请日：2022-10-19
申请人： Skyworks Solutions, Inc.
发明人： Atsushi Takano , Takeshi Furusawa , Mitsuhiro Furukawa
IPC分类号： H03H9/02 , H03H3/02 , H03H9/10 , H03H9/205 , H03H9/56 , H03H9/05 , H10N30/088 , H04B1/3827 , H03F3/20
CPC分类号： H03H9/02133 , H03H3/02 , H03H9/02102 , H03H9/02125 , H03H9/0514 , H03H9/105 , H03H9/205 , H03H9/566 , H10N30/088 , H03F3/20 , H03F2200/451 , H04B1/3827
摘要： Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components.

10. 发明公开

US20230216471A1 SUPPRESSION OF PARASITIC ACOUSTIC WAVES IN INTEGRATED CIRCUIT DEVICES 审中-公开
公开(公告)号：US20230216471A1
公开(公告)日：2023-07-06
申请号：US18001141
申请日：2021-06-18
申请人： MACOM Technology Solutions Holdings, Inc.
发明人： Gabriel R. CUEVA , Timothy E. BOLES , Wayne Mack STRUBLE
IPC分类号： H03H9/02 , H01L29/06 , H01L29/778 , H01L29/10 , H01L29/267
CPC分类号： H03H9/02125 , H01L29/267 , H01L29/0646 , H01L29/1075 , H01L29/7786 , H03H9/02102 , H01L29/402
摘要： Structures for suppressing parasitic acoustic waves in semiconductor structures and integrated circuit devices are described. Such integrated circuit devices can, typically, produce undesirable acoustic wave resonances, and the acoustic waves can degrade the performance of the devices. In that context, some embodiments described herein relate to spoiling a conductive path that participates in the generation of acoustic waves. Some embodiments relate to spoiling acoustic characteristics of an acoustic resonant structure that may be present in the vicinity of the device. Combined embodiments that spoil the conductive path and acoustic characteristics are also possible.

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