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1. 发明授权

US5779807A Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers 失效
标题翻译：用于从等离子体处理室中的半导体衬底去除微粒的方法和装置
公开(公告)号：US5779807A
公开(公告)日：1998-07-14
申请号：US740407
申请日：1996-10-29
申请人： Charles Dornfest , Anand Gupta , Gerald Girard
发明人： Charles Dornfest , Anand Gupta , Gerald Girard
IPC分类号： B08B6/00 , B08B7/00 , C23C16/44 , H01J37/32 , H01L21/00 , B08B3/12 , B44C1/22
CPC分类号： H01L21/67028 , B08B6/00 , B08B7/0035 , C23C16/4401 , H01J37/32082 , H01J2237/022
摘要： An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.
摘要翻译：一种用于在诸如等离子体增强化学气相沉积（PECVD）室的等离子体处理室中从半导体晶片去除颗粒物质的静电技术。在微粒去除操作阶段期间，支撑晶片的正常接地电极暂时与地离开，并且偏置电压发生器同时连接到电极，提供足够的偏压以从晶片的表面静电发射微粒。在微粒去除阶段期间维持在正常接地电极上方形成的等离子体，并且从晶片发射的微粒悬浮在围绕等离子体的护套区域中，从那里可以通过气体的吹扫流将其去除。优选地，偏置电压发生器提供极性交替的偏置电压，以确保从晶片表面去除带正电荷和带负电荷的颗粒。

2. 发明授权

US06214160B1 Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers 失效
标题翻译：用于从等离子体处理室中的半导体衬底去除微粒的方法和装置
公开(公告)号：US06214160B1
公开(公告)日：2001-04-10
申请号：US09074562
申请日：1998-05-07
申请人： Charles Dornfest , Anand Gupta , Gerald Girard
发明人： Charles Dornfest , Anand Gupta , Gerald Girard
IPC分类号： C23F102
CPC分类号： H01L21/67028 , B08B6/00 , B08B7/0035 , C23C16/4401 , H01J37/32082 , H01J2237/022
摘要： An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.
摘要翻译：一种用于在诸如等离子体增强化学气相沉积（PECVD）室的等离子体处理室中从半导体晶片去除颗粒物质的静电技术。在微粒去除操作阶段期间，支撑晶片的正常接地电极暂时与地离开，并且偏置电压发生器同时连接到电极，提供足够的偏压以从晶片的表面静电发射微粒。在微粒去除阶段期间维持在正常接地电极上方形成的等离子体，并且从晶片发射的微粒悬浮在围绕等离子体的护套区域中，从那里可以通过气体的吹扫流将其去除。优选地，偏置电压发生器提供极性交替的偏置电压，以确保从晶片表面去除带正电荷和带负电荷的颗粒。

3. 发明授权

US06358810B1 Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes 失效
标题翻译：用于高K介质电容器和相关电极的优越的步距覆盖和接口控制的方法
公开(公告)号：US06358810B1
公开(公告)日：2002-03-19
申请号：US09123690
申请日：1998-07-28
申请人： Charles Dornfest , John Egermeier , Nitin Khurana
发明人： Charles Dornfest , John Egermeier , Nitin Khurana
IPC分类号： H01L2120
CPC分类号： H01L28/55 , H01L28/60
摘要： The present invention provides a multi-layer semiconductor memory device comprising: a bottom electrode having a bottom layer, an upper interface layer and an intermediate tuning layer disposed between the bottom layer and the upper interface layer; a top electrode; and a high dielectric constant dielectric layer disposed between the bottom electrode and the top electrode. The present invention further provides an apparatus and a method for manufacturing high density DRAMs having capacitors having high quality HDC materials and low leakage currents. Another aspect of the present invention provides an electrode-dielectric interface that nucleates high quality HDC films. The present invention further provides an apparatus and a method for manufacturing capacitors within a high aspect ratio aperture.
摘要翻译：本发明提供一种多层半导体存储器件，包括：底层电极，其具有底层，上界面层和设置在底层和上界面层之间的中间调谐层; 顶电极以及设置在底部电极和顶部电极之间的高介电常数电介质层。本发明还提供一种用于制造具有高质量HDC材料和低漏电流的电容器的高密度DRAM的装置和方法。本发明的另一方面提供了一种使高质量HDC膜成核的电极 - 电介质界面。本发明还提供了一种在高纵横比孔径内制造电容器的装置和方法。

4. 发明授权

US06099651A Temperature controlled chamber liner 失效
标题翻译：温度控制室内衬
公开(公告)号：US06099651A
公开(公告)日：2000-08-08
申请号：US52765
申请日：1998-03-31
申请人： Talex Sajoto , Jun Zhao , Charles Dornfest , Leonid Selyutin
发明人： Talex Sajoto , Jun Zhao , Charles Dornfest , Leonid Selyutin
IPC分类号： C23C16/52 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

5. 发明授权

US6066209A Cold trap 失效
标题翻译：冷阱
公开(公告)号：US6066209A
公开(公告)日：2000-05-23
申请号：US52743
申请日：1998-03-31
申请人： Talex Sajoto , Jun Zhao , Vincent Ku , Charles Dornfest
发明人： Talex Sajoto , Jun Zhao , Vincent Ku , Charles Dornfest
IPC分类号： C23C16/52 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65
摘要： The invention relates to an apparatus and process for filtering deposition gases in a substrate processing system. Particularly contemplated is an apparatus and process for the filtering deposition gases of a metal-oxide film deposited on a silicon wafer to make integrated circuits. In one embodiment, the invention provides an apparatus for filtering a fluid in a semiconductor processing system, comprising a housing and a filtering member disposable in the housing, the filtering member comprising a base portion and a filtering portion having an inlet and an outlet and a plurality of temperature controlled fluid passages formed between the inlet and the outlet, the passages having a length longer than a width across the passages.
摘要翻译：本发明涉及一种用于在基板处理系统中过滤沉积气体的装置和方法。特别考虑的是用于过滤沉积在硅晶片上的金属氧化物膜的沉积气体以制造集成电路的装置和方法。在一个实施例中，本发明提供了一种用于对半导体处理系统中的流体进行过滤的装置，包括壳体和一次性在壳体中的过滤构件，过滤构件包括基部和具有入口和出口的过滤部分，多个温度控制的流体通道形成在入口和出口之间，通道的长度大于通道两端的宽度。

6. 发明授权

US5846332A Thermally floating pedestal collar in a chemical vapor deposition chamber 失效
标题翻译：在化学气相沉积室中的热浮底座
公开(公告)号：US5846332A
公开(公告)日：1998-12-08
申请号：US680724
申请日：1996-07-12
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45508 , C23C16/4411 , C23C16/4412 , C23C16/4585 , C23C16/46 , C23C16/5096 , C23C16/54 , H01J37/3244 , H01J37/32477 , H01J37/32834 , H01J2237/2001
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。放置在基座上的优选也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。尽管其热隔离，外围环电连接到基座以防止电弧。泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

7. 发明授权

US06270859B1 Plasma treatment of titanium nitride formed by chemical vapor deposition 失效
公开(公告)号：US06270859B1
公开(公告)日：2001-08-07
申请号：US09049856
申请日：1998-03-27
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C1634
摘要： A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.

8. 发明授权

US06258170B1 Vaporization and deposition apparatus 失效
标题翻译：蒸发沉淀装置及工艺
公开(公告)号：US06258170B1
公开(公告)日：2001-07-10
申请号：US08927700
申请日：1997-09-11
申请人： Sasson Somekh , Jun Zhao , Charles Dornfest , Talex Sajoto , Leonid Selyutin , Vincent Ku , Chris Wang , Frank Chang , Po Tang
发明人： Sasson Somekh , Jun Zhao , Charles Dornfest , Talex Sajoto , Leonid Selyutin , Vincent Ku , Chris Wang , Frank Chang , Po Tang
IPC分类号： C23C1600
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65 , Y10T137/87684
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

9. 发明授权

US6123773A Gas manifold 失效
标题翻译：气体歧管
公开(公告)号：US6123773A
公开(公告)日：2000-09-26
申请号：US52792
申请日：1998-03-31
申请人： Talex Sajoto , Leonid Selyutin , Charles Dornfest , Jun Zhao
发明人： Talex Sajoto , Leonid Selyutin , Charles Dornfest , Jun Zhao
IPC分类号： C23C16/52 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

10. 发明授权

US6077562A Method for depositing barium strontium titanate 失效
标题翻译：沉积钡钛酸锶的方法
公开(公告)号：US6077562A
公开(公告)日：2000-06-20
申请号：US52766
申请日：1998-03-31
申请人： Charles Dornfest , Jun Zhao , Talex Sajoto , Lee Luo
发明人： Charles Dornfest , Jun Zhao , Talex Sajoto , Lee Luo
IPC分类号： C23C16/52 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

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