专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5779807A Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers 失效
标题翻译：用于从等离子体处理室中的半导体衬底去除微粒的方法和装置
公开(公告)号：US5779807A
公开(公告)日：1998-07-14
申请号：US740407
申请日：1996-10-29
申请人： Charles Dornfest , Anand Gupta , Gerald Girard
发明人： Charles Dornfest , Anand Gupta , Gerald Girard
IPC分类号： B08B6/00 , B08B7/00 , C23C16/44 , H01J37/32 , H01L21/00 , B08B3/12 , B44C1/22
CPC分类号： H01L21/67028 , B08B6/00 , B08B7/0035 , C23C16/4401 , H01J37/32082 , H01J2237/022
摘要： An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.
摘要翻译：一种用于在诸如等离子体增强化学气相沉积（PECVD）室的等离子体处理室中从半导体晶片去除颗粒物质的静电技术。在微粒去除操作阶段期间，支撑晶片的正常接地电极暂时与地离开，并且偏置电压发生器同时连接到电极，提供足够的偏压以从晶片的表面静电发射微粒。在微粒去除阶段期间维持在正常接地电极上方形成的等离子体，并且从晶片发射的微粒悬浮在围绕等离子体的护套区域中，从那里可以通过气体的吹扫流将其去除。优选地，偏置电压发生器提供极性交替的偏置电压，以确保从晶片表面去除带正电荷和带负电荷的颗粒。

2. 发明授权

US06214160B1 Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers 失效
标题翻译：用于从等离子体处理室中的半导体衬底去除微粒的方法和装置
公开(公告)号：US06214160B1
公开(公告)日：2001-04-10
申请号：US09074562
申请日：1998-05-07
申请人： Charles Dornfest , Anand Gupta , Gerald Girard
发明人： Charles Dornfest , Anand Gupta , Gerald Girard
IPC分类号： C23F102
CPC分类号： H01L21/67028 , B08B6/00 , B08B7/0035 , C23C16/4401 , H01J37/32082 , H01J2237/022
摘要： An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.
摘要翻译：一种用于在诸如等离子体增强化学气相沉积（PECVD）室的等离子体处理室中从半导体晶片去除颗粒物质的静电技术。在微粒去除操作阶段期间，支撑晶片的正常接地电极暂时与地离开，并且偏置电压发生器同时连接到电极，提供足够的偏压以从晶片的表面静电发射微粒。在微粒去除阶段期间维持在正常接地电极上方形成的等离子体，并且从晶片发射的微粒悬浮在围绕等离子体的护套区域中，从那里可以通过气体的吹扫流将其去除。优选地，偏置电压发生器提供极性交替的偏置电压，以确保从晶片表面去除带正电荷和带负电荷的颗粒。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式