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    • 3. 发明授权
    • Gas processing techniques
    • 气体处理技术
    • US06223540B1
    • 2001-05-01
    • US09340064
    • 1999-06-25
    • John Egermeier
    • John Egermeier
    • B01D800
    • B01D53/002B01D8/00
    • The present invention provides techniques for processing effluent gases from vacuum fabrication processes. The effluent gases are condensed on cold surfaces (512 and 514) inside a novel pump (220) resulting in a high vacuum. The pump (220) can be connected to a vacuum fabrication processing chamber (210) and to a turbo molecular pump (275). The condensate which is formed on the cold surfaces of the pump (220) is subsequently evaporated to form regenerated gases during the regeneration of the pump. A pressure vessel (280) is removably connected to the pump during regeneration, causing the regenerated gases to fill the pump and the pressure vessel at pressures ranging from about 10,343 torr (200 psi) to about 103,430 torr ( 2,000 psi). The pressure vessel is closed when substantially all condensate has evaporated. The vessel containing regenerated gases can then be connected to an on-site or to a remote gas treatment facility for removal of noxious substances. In an additional embodiment, an effluent gas processing system (610) is provided, including a controller (600) which is adapted for interacting with a plurality of unit operations (620, 622, 624, 626 and 628) of the novel gas processing techniques.
    • 本发明提供了用于处理来自真空制造工艺的流出气体的技术。 废气在新型泵(220)内的冷表面(512和514)上冷凝,导致高真空。 泵(220)可以连接到真空制造处理室(210)和涡轮分子泵(275)。 在泵的再生期间,形成在泵(220)的冷表面上的冷凝物随后被蒸发以形成再生气体。 在再生期间,压力容器(280)可移除地连接到泵,导致再生气体以约10333托(200psi)至约103,430托(2,000psi)的压力填充泵和压力容器。 当基本上所有的冷凝物蒸发时,压力容器关闭。 然后可以将含有再生气体的容器连接到现场或远程气体处理设备以除去有害物质。 在另外的实施例中,提供了一种流出气体处理系统(610),其包括适于与新颖的气体处理技术的多个单元操作(620,622,624,626和628)相互作用的控制器(600) 。
    • 5. 发明授权
    • Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes
    • 用于高K介质电容器和相关电极的优越的步距覆盖和接口控制的方法
    • US06358810B1
    • 2002-03-19
    • US09123690
    • 1998-07-28
    • Charles DornfestJohn EgermeierNitin Khurana
    • Charles DornfestJohn EgermeierNitin Khurana
    • H01L2120
    • H01L28/55H01L28/60
    • The present invention provides a multi-layer semiconductor memory device comprising: a bottom electrode having a bottom layer, an upper interface layer and an intermediate tuning layer disposed between the bottom layer and the upper interface layer; a top electrode; and a high dielectric constant dielectric layer disposed between the bottom electrode and the top electrode. The present invention further provides an apparatus and a method for manufacturing high density DRAMs having capacitors having high quality HDC materials and low leakage currents. Another aspect of the present invention provides an electrode-dielectric interface that nucleates high quality HDC films. The present invention further provides an apparatus and a method for manufacturing capacitors within a high aspect ratio aperture.
    • 本发明提供一种多层半导体存储器件,包括:底层电极,其具有底层,上界面层和设置在底层和上界面层之间的中间调谐层; 顶电极 以及设置在底部电极和顶部电极之间的高介电常数电介质层。 本发明还提供一种用于制造具有高质量HDC材料和低漏电流的电容器的高密度DRAM的装置和方法。 本发明的另一方面提供了一种使高质量HDC膜成核的电极 - 电介质界面。 本发明还提供了一种在高纵横比孔径内制造电容器的装置和方法。