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    • 6. 发明授权
    • Semiconductor device and decoding method thereof
    • 半导体器件及其解码方法
    • US08522124B2
    • 2013-08-27
    • US13069834
    • 2011-03-23
    • Yong-June KimJun-Jin KongYoung-Hwan LeeJae-Hong Kim
    • Yong-June KimJun-Jin KongYoung-Hwan LeeJae-Hong Kim
    • G06F11/00H03M13/00
    • G06F11/1048
    • An error control coding (ECC) circuit includes a first decoder, a second decoder, and a controller. The first decoder receives encoded data comprising a first parity and a second parity. The first decoder decodes the encoded data to a first code by using the first parity. The second decoder is connected to the first decoder. The second decoder is configured to decode the encoded data when the first decoder is deactivated and decode the first code using the second parity when the first decoder is deactivated. The controller transmits a control signal to the first decoder and the second decoder to control the first decoder and the second decoder.
    • 错误控制编码(ECC)电路包括第一解码器,第二解码器和控制器。 第一解码器接收包括第一奇偶校验和第二奇偶校验的编码数据。 第一解码器通过使用第一奇偶校验将编码数据解码为第一代码。 第二解码器连接到第一解码器。 第二解码器被配置为当第一解码器被去激活时解码编码数据,并且当第一解码器被去激活时使用第二奇偶校验解码第一代码。 控制器向第一解码器和第二解码器发送控制信号以控制第一解码器和第二解码器。
    • 7. 发明申请
    • MSB-BASED ERROR CORRECTION FOR FLASH MEMORY SYSTEM
    • 用于闪存存储器系统的基于MSB的错误校正
    • US20100277979A1
    • 2010-11-04
    • US12836249
    • 2010-07-14
    • Dong-Ku KangSeung-Jae LeeJun-Jin Kong
    • Dong-Ku KangSeung-Jae LeeJun-Jin Kong
    • G11C16/04G11C16/06
    • G11C11/5642G06F11/1068G11C16/0483G11C16/26G11C16/3418G11C2029/0411
    • A flash memory system includes a multi-bit flash memory device having a memory cell array including memory cells arranged in rows and columns; a read circuit configured to read data from the memory cell array; and control logic configured to control the read circuit so as to successively read data from a selected memory cell and adjacent memory cells to the selected memory cell in response to a request for a read operation with respect to MSB data stored in the selected memory cell. A compare circuit is configured to compare data read from the adjacent memory cells to the selected memory cell provided from the multi-bit flash memory device and to correct data read from the selected memory cells based upon the comparison result.
    • 闪存系统包括具有存储单元阵列的多位闪存器件,该存储器单元阵列包括以行和列排列的存储器单元; 读取电路,被配置为从存储单元阵列读取数据; 以及控制逻辑,被配置为控制所述读取电路,以便响应于对存储在所选择的存储器单元中的MSB数据的读取操作的请求,连续地将数据从所选择的存储器单元和相邻存储器单元读取到所选择的存储器单元。 比较电路被配置为将从相邻存储器单元读取的数据与从多位闪存器件提供的所选择的存储器单元进行比较,并且基于比较结果校正从所选存储器单元读取的数据。