会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Non-volatile memory device, operation method thereof, and devices having the non-volatile memory device
    • 非易失性存储器件,其操作方法以及具有非易失性存储器件的器件
    • US08508990B2
    • 2013-08-13
    • US13071727
    • 2011-03-25
    • Kyoung Lae ChoHyuck-Sun KwonJun Jin Kong
    • Kyoung Lae ChoHyuck-Sun KwonJun Jin Kong
    • G11C16/04
    • G11C11/5628G11C16/3454
    • A non-volatile memory device includes a memory cell array including a plurality of multi-level cells each storing data corresponding to one of a plurality of states of a first group of states, and a control circuit. The control circuit is configured to program data corresponding to one of the plurality of states in a first multi-level cell according to a first verify voltage level of a first group of verify voltage levels, and to control the first multi-level cell to be re-programmed to one of a plurality of states of a second group of states according to a first verify voltage level of a second group of verify voltage levels. Each voltage level of the second group of verify voltage levels has a higher level than the verify voltage levels of the first group of verify voltage levels.
    • 非易失性存储器件包括存储单元阵列,该存储单元阵列包括多个多电平单元,每个多电平单元存储对应于第一组状态的多种状态之一的数据,以及控制电路。 控制电路被配置为根据第一组验证电压电平的第一验证电压电平对与第一多电平单元中的多个状态中的一个状态相对应的数据,并且将第一多电平单元控制为 根据第二组验证电压电平的第一验证电压电平,将其重新编程为第二组状态的多个状态之一。 第二组验证电压电平的每个电压电平具有比第一组验证电压电平的验证电压电平更高的电平。