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1. 发明申请

US20070128869A1 METHOD AND APPARATUS FOR ANNEALING COPPER FILMS 审中-公开
标题翻译：退火铜膜的方法和装置
公开(公告)号：US20070128869A1
公开(公告)日：2007-06-07
申请号：US11670797
申请日：2007-02-02
申请人： B. Chen , Ho Shin , Yezdi Dordi , Ratson Morad , Robin Cheung
发明人： B. Chen , Ho Shin , Yezdi Dordi , Ratson Morad , Robin Cheung
IPC分类号： H01L21/44
CPC分类号： H01L21/6723 , C22F1/02 , C22F1/08 , C25D5/48 , C25D5/50 , C25D7/123 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/76838 , H01L21/7684 , H01L21/76886
摘要： A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.
摘要翻译：一种退火铜的方法和装置。该方法包括通过电镀在一体化处理系统中的基板上形成铜层，并对集成处理系统内的室内的铜层退火。

2. 发明申请

US20060246690A1 Electro-chemical deposition system 失效
公开(公告)号：US20060246690A1
公开(公告)日：2006-11-02
申请号：US11476945
申请日：2006-06-27
申请人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： H01L21/20 , B05D3/00 , B05C13/00 , B05C13/02
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

3. 发明授权

US06635157B2 Electro-chemical deposition system 失效
公开(公告)号：US06635157B2
公开(公告)日：2003-10-21
申请号：US09867780
申请日：2001-05-29
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

4. 发明授权

US07192494B2 Method and apparatus for annealing copper films 有权
标题翻译：铜膜退火方法和设备
公开(公告)号：US07192494B2
公开(公告)日：2007-03-20
申请号：US10611589
申请日：2003-06-30
申请人： B. Michelle Chen , Ho Seon Shin , Yezdi Dordi , Ratson Morad , Robin Cheung
发明人： B. Michelle Chen , Ho Seon Shin , Yezdi Dordi , Ratson Morad , Robin Cheung
IPC分类号： C25D5/50
CPC分类号： H01L21/6723 , C22F1/02 , C22F1/08 , C25D5/48 , C25D5/50 , C25D7/123 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/76838 , H01L21/7684 , H01L21/76886
摘要： A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.
摘要翻译：一种退火铜的方法和装置。该方法包括通过电镀在一体化处理系统中的基板上形成铜层，并对集成处理系统内的室内的铜层退火。

5. 发明授权

US06893548B2 Method of conditioning electrochemical baths in plating technology 失效
标题翻译：电镀技术中电化学浴的调理方法
公开(公告)号：US06893548B2
公开(公告)日：2005-05-17
申请号：US09882208
申请日：2001-06-13
申请人： Robin Cheung , Daniel A. Carl , Liang-Yuh Chen , Yezdi Dordi , Paul F. Smith , Ratson Morad , Peter Hey , Ashok Sinha
发明人： Robin Cheung , Daniel A. Carl , Liang-Yuh Chen , Yezdi Dordi , Paul F. Smith , Ratson Morad , Peter Hey , Ashok Sinha
IPC分类号： C23C18/16 , C25D7/12 , C25D21/12 , C25D21/18 , C25D5/00
CPC分类号： C25D21/18 , C23C18/1617 , C23C18/1683 , C25D21/12
摘要： An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a first electrochemical bath having a first bath composition, utilizing the first electrochemical bath in an electrochemical deposition process to form a second electrochemical bath having a second bath composition and analyzing the first and second compositions to identify one or more constituents generated in the electrochemical deposition process. Additive material having a composition that is substantially the same as all or at least some of the one or more constituents generated in the electrochemical deposition process may be added to another electrochemical bath to produce a desired chemical composition. The constituents may be added at the beginning of the use of the bath to initially condition the electrochemical bath or may be added, preferably either continuously or periodically, during the electrochemical deposition process.
摘要翻译：提供了一种用于分析或调理电化学浴的装置和方法。本发明的一个方面提供了一种用于在电化学沉积方法中分析电化学浴的方法，包括提供具有第一浴组成的第一电化学浴，利用电化学沉积工艺中的第一电化学浴形成具有第二浴的第二电化学浴组合和分析第一和第二组合物以鉴定在电化学沉积过程中产生的一种或多种成分。具有与在电化学沉积工艺中产生的一种或多种成分中的全部或至少一些基本上相同的组成的添加剂材料可以加入到另一电化学浴中以产生所需的化学组成。可以在使用浴的开始时添加组分以最初调节电化学浴，或者可以在电化学沉积过程期间连续地或周期性地添加。

6. 发明授权

US06258223B1 In-situ electroless copper seed layer enhancement in an electroplating system 有权
标题翻译：电镀系统中的原位无电铜种子层增强
公开(公告)号：US06258223B1
公开(公告)日：2001-07-10
申请号：US09350877
申请日：1999-07-09
申请人： Robin Cheung , Daniel A. Carl , Yezdi Dordi , Peter Hey , Ratson Morad , Liang-Yuh Chen , Paul F. Smith , Ashok K. Sinha
发明人： Robin Cheung , Daniel A. Carl , Yezdi Dordi , Peter Hey , Ratson Morad , Liang-Yuh Chen , Paul F. Smith , Ashok K. Sinha
IPC分类号： C25D1700
CPC分类号： H01L21/68721 , C25D7/123 , C25D17/001 , H01L21/68728 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a system that provides for electroless deposition performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimize oxidation. The system generally includes a mainframe having a mainframe substrate transfer robot, a loading station disposed in connection with the mainframe, one or more processing facilities disposed in connection with the mainframe, an electroless supply fluidly connected to the one or more processing applicators and optionally includes a spin-rinse-dry (SRD) station, a rapid thermal anneal chamber and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system.
摘要翻译：本发明公开了一种系统，其提供用电镀方法原位进行的无电沉积，以在电镀过程之前使氧化和其它污染物最小化。该系统允许基板由无电镀沉积工艺转移到具有保护涂层的电镀工艺中以使氧化最小化。该系统通常包括具有主机基板传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理设备，流体连接到该一个或多个处理施加器的无电解供应器，并且可选地包括旋转干燥（SRD）站，快速热退火室和用于控制沉积过程和电化学沉积系统的组件的系统控制器。

7. 发明授权

US06258220B1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US06258220B1
公开(公告)日：2001-07-10
申请号：US09289074
申请日：1999-04-08
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器工艺和电化学沉积系统的组件。

8. 发明授权

US06276072B1 Method and apparatus for heating and cooling substrates 失效
标题翻译：用于加热和冷却基材的方法和装置
公开(公告)号：US06276072B1
公开(公告)日：2001-08-21
申请号：US09396007
申请日：1999-09-15
申请人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
发明人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
IPC分类号： F26B700
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67748
摘要： A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism. The heating mechanism preferably comprises a heated substrate support adapted to support a substrate and to heat the supported substrate to a predetermined temperature, and the cooling mechanism preferably comprises a cooling plate. The transfer mechanism may comprise, for example, a wafer lift hoop having a plurality of fingers adapted to support a substrate, or a plurality of wafer lift pins. A dry gas source may be coupled to the chamber and adapted to supply a dry gas thereto. The chamber preferably includes a pump adapted to evacuate the chamber to a predetermined pressure during at least cooling. A method for heating and cooling a substrate also is provided.
摘要翻译：提供了一种用于加热和冷却衬底的方法和装置。提供了一种室，其包括适于加热位于加热机构附近的基板的加热机构，与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构，以及适于将基板靠近加热机构的位置和靠近冷却机构的位置。加热机构优选地包括适于支撑基板并将受支撑基板加热到预定温度的加热基板支撑件，并且冷却机构优选地包括冷却板。转移机构可以包括例如具有适于支撑衬底的多个指状物的晶片提升环或多个晶片提升销。干燥气源可以连接到室并适于向其供应干燥气体。腔室优选地包括适于在至少冷却期间将腔室排空到预定压力的泵。还提供了一种用于加热和冷却基板的方法。

9. 发明授权

US06658763B2 Method for heating and cooling substrates 有权
标题翻译：加热和冷却基材的方法
公开(公告)号：US06658763B2
公开(公告)日：2003-12-09
申请号：US10292396
申请日：2002-11-12
申请人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
发明人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
IPC分类号： F26B504
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67748
摘要： A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.
摘要翻译：提供了一种用于加热和冷却衬底的方法和装置。提供了一种室，其包括适于加热位于加热机构附近的基板的加热机构，与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构，以及适于将基板靠近加热机构的位置和靠近冷却机构的位置。

10. 发明授权

US06929774B2 Method and apparatus for heating and cooling substrates 失效
标题翻译：用于加热和冷却基材的方法和装置
公开(公告)号：US06929774B2
公开(公告)日：2005-08-16
申请号：US10701387
申请日：2003-11-04
申请人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
发明人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
IPC分类号： H01L21/31 , H01L21/00 , H01L21/324 , H01L21/677 , F26B7/00
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67748
摘要： A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.
摘要翻译：提供了一种用于加热和冷却衬底的方法和装置。提供了一种室，其包括适于加热位于加热机构附近的基板的加热机构，与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构，以及适于将基板靠近加热机构的位置和靠近冷却机构的位置。

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