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1. 发明授权

US06929774B2 Method and apparatus for heating and cooling substrates 失效
标题翻译：用于加热和冷却基材的方法和装置
公开(公告)号：US06929774B2
公开(公告)日：2005-08-16
申请号：US10701387
申请日：2003-11-04
申请人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
发明人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
IPC分类号： H01L21/31 , H01L21/00 , H01L21/324 , H01L21/677 , F26B7/00
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67748
摘要： A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.
摘要翻译：提供了一种用于加热和冷却衬底的方法和装置。提供了一种室，其包括适于加热位于加热机构附近的基板的加热机构，与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构，以及适于将基板靠近加热机构的位置和靠近冷却机构的位置。

2. 发明授权

US06658763B2 Method for heating and cooling substrates 有权
标题翻译：加热和冷却基材的方法
公开(公告)号：US06658763B2
公开(公告)日：2003-12-09
申请号：US10292396
申请日：2002-11-12
申请人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
发明人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
IPC分类号： F26B504
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67748
摘要： A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.
摘要翻译：提供了一种用于加热和冷却衬底的方法和装置。提供了一种室，其包括适于加热位于加热机构附近的基板的加热机构，与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构，以及适于将基板靠近加热机构的位置和靠近冷却机构的位置。

3. 发明授权

US06276072B1 Method and apparatus for heating and cooling substrates 失效
标题翻译：用于加热和冷却基材的方法和装置
公开(公告)号：US06276072B1
公开(公告)日：2001-08-21
申请号：US09396007
申请日：1999-09-15
申请人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
发明人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
IPC分类号： F26B700
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67748
摘要： A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism. The heating mechanism preferably comprises a heated substrate support adapted to support a substrate and to heat the supported substrate to a predetermined temperature, and the cooling mechanism preferably comprises a cooling plate. The transfer mechanism may comprise, for example, a wafer lift hoop having a plurality of fingers adapted to support a substrate, or a plurality of wafer lift pins. A dry gas source may be coupled to the chamber and adapted to supply a dry gas thereto. The chamber preferably includes a pump adapted to evacuate the chamber to a predetermined pressure during at least cooling. A method for heating and cooling a substrate also is provided.
摘要翻译：提供了一种用于加热和冷却衬底的方法和装置。提供了一种室，其包括适于加热位于加热机构附近的基板的加热机构，与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构，以及适于将基板靠近加热机构的位置和靠近冷却机构的位置。加热机构优选地包括适于支撑基板并将受支撑基板加热到预定温度的加热基板支撑件，并且冷却机构优选地包括冷却板。转移机构可以包括例如具有适于支撑衬底的多个指状物的晶片提升环或多个晶片提升销。干燥气源可以连接到室并适于向其供应干燥气体。腔室优选地包括适于在至少冷却期间将腔室排空到预定压力的泵。还提供了一种用于加热和冷却基板的方法。

4. 发明授权

US06477787B2 Method and apparatus for heating and cooling substrates 有权
公开(公告)号：US06477787B2
公开(公告)日：2002-11-12
申请号：US10073762
申请日：2002-02-11
申请人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
发明人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
IPC分类号： F26B700
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67748
摘要： A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.

5. 发明授权

US06357143B2 Method and apparatus for heating and cooling substrates 失效
标题翻译：用于加热和冷却基材的方法和装置
公开(公告)号：US06357143B2
公开(公告)日：2002-03-19
申请号：US09909915
申请日：2001-07-20
申请人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
发明人： Ratson Morad , Ho Seon Shin , Robin Cheung , Igor Kogan
IPC分类号： F26B700
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67748
摘要： A method and apparatus for heating and cooling a substrate. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.
摘要翻译：一种用于加热和冷却基底的方法和装置。提供了一种室，其包括适于加热位于加热机构附近的基板的加热机构，与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构，以及适于将基板靠近加热机构的位置和靠近冷却机构的位置。

6. 发明授权

US06258220B1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US06258220B1
公开(公告)日：2001-07-10
申请号：US09289074
申请日：1999-04-08
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器工艺和电化学沉积系统的组件。

7. 发明授权

US06635157B2 Electro-chemical deposition system 失效
公开(公告)号：US06635157B2
公开(公告)日：2003-10-21
申请号：US09867780
申请日：2001-05-29
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

8. 发明授权

US07192494B2 Method and apparatus for annealing copper films 有权
标题翻译：铜膜退火方法和设备
公开(公告)号：US07192494B2
公开(公告)日：2007-03-20
申请号：US10611589
申请日：2003-06-30
申请人： B. Michelle Chen , Ho Seon Shin , Yezdi Dordi , Ratson Morad , Robin Cheung
发明人： B. Michelle Chen , Ho Seon Shin , Yezdi Dordi , Ratson Morad , Robin Cheung
IPC分类号： C25D5/50
CPC分类号： H01L21/6723 , C22F1/02 , C22F1/08 , C25D5/48 , C25D5/50 , C25D7/123 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/76838 , H01L21/7684 , H01L21/76886
摘要： A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.
摘要翻译：一种退火铜的方法和装置。该方法包括通过电镀在一体化处理系统中的基板上形成铜层，并对集成处理系统内的室内的铜层退火。

9. 发明授权

US06897146B2 System architecture of semiconductor manufacturing equipment 失效
标题翻译：半导体制造设备的系统架构
公开(公告)号：US06897146B2
公开(公告)日：2005-05-24
申请号：US10602225
申请日：2003-06-23
申请人： Ratson Morad , Ho Seon Shin
发明人： Ratson Morad , Ho Seon Shin
IPC分类号： C23C16/02 , C23C16/54 , H01L21/00 , H01L21/4763
CPC分类号： H01L21/67167 , C23C16/0227 , C23C16/54 , H01L21/67184 , H01L21/67207
摘要： A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.
摘要翻译：一种半导体制造设备，其中脱气室与常规的通过腔室位置集成。用于在半导体晶片上沉积Cu阻挡层和种子层的优选实施例包括前开口统一吊舱，单个晶片负荷锁定室，脱气室，预清洁室，Ta或 TaN处理室和一个或多个Cu处理室。脱气室集成到通气室。这样的系统可以实现高于每小时100个晶片的系统吞吐量。

10. 发明申请

US20050221603A1 System architecture of semiconductor manufacturing equipment 审中-公开
标题翻译：半导体制造设备的系统架构
公开(公告)号：US20050221603A1
公开(公告)日：2005-10-06
申请号：US11137301
申请日：2005-05-24
申请人： Ratson Morad , Ho Seon Shin
发明人： Ratson Morad , Ho Seon Shin
IPC分类号： H01L21/00 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/67167 , H01L21/67184 , H01L21/67207 , H01L21/76841
摘要： Provided herein is a system architecture of semiconductor manufacturing equipment, wherein degas chamber(s) are integrated to the conventional pass-through chamber location. Also provided herein is a system/method for depositing Cu barrier and seed layers on a semiconductor wafer. This system comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.
摘要翻译：本文提供了一种半导体制造设备的系统架构，其中脱气室与常规的通过腔室位置集成。本文还提供了用于在半导体晶片上沉积Cu势垒和种子层的系统/方法。该系统包括前开口统一吊舱，单个晶片负载锁定室，脱气室，预净化室，Ta或TaN处理室，以及Cu处理室（s）。脱气室集成到通气室。这样的系统可以实现高于每小时100个晶片的系统吞吐量。

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