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1. 发明申请

US20110303884A1 SiC Crystals Having Spatially Uniform Doping Impurities 审中-公开
标题翻译：具有空间均匀掺杂杂质的SiC晶体
公开(公告)号：US20110303884A1
公开(公告)日：2011-12-15
申请号：US13217668
申请日：2011-08-25
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew N. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew N. Souzis
IPC分类号： H01B1/04
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule.
摘要翻译：升华生长的碳化硅（SiC）单晶棒包括在其升华生长过程中引入到SiC单晶晶锭中的深度掺杂剂，使得在不超过50％连续长度的所述坯料，所述坯料中心处的深度掺杂剂浓度与所述焦头连续部分中的深度掺杂剂的平均浓度相差不超过25％。

2. 发明授权

US07608524B2 Method of and system for forming SiC crystals having spatially uniform doping impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的方法和系统
公开(公告)号：US07608524B2
公开(公告)日：2009-10-27
申请号：US11405368
申请日：2006-04-17
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： H01L21/20
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：在物理蒸气传输方法和系统中，提供了充满源材料的生长室和间隔开的晶种。至少一个胶囊具有在其内部和外部之间延伸的至少一个毛细管，其中胶囊的内部充有掺杂剂。每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

3. 发明申请

US20100018455A1 System for Forming SiC Crystals Having Spatially Uniform Doping Impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的系统
公开(公告)号：US20100018455A1
公开(公告)日：2010-01-28
申请号：US12573288
申请日：2009-10-05
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： C30B23/06
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：物理蒸汽输送系统包括装有源材料的生长室和间隔开的晶种，以及至少一个具有在其内部和外部之间延伸的至少一个毛细管的胶囊，其中胶囊的内部装有掺杂剂每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

4. 发明授权

US08216369B2 System for forming SiC crystals having spatially uniform doping impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的系统
公开(公告)号：US08216369B2
公开(公告)日：2012-07-10
申请号：US12573288
申请日：2009-10-05
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：物理蒸汽输送系统包括装有源材料的生长室和间隔开的晶种，以及至少一个具有在其内部和外部之间延伸的至少一个毛细管的胶囊，其中胶囊的内部装有掺杂剂每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

5. 发明申请

US20080190355A1 Low-Doped Semi-Insulating Sic Crystals and Method 审中-公开
标题翻译：低掺杂半绝缘矽晶体和方法
公开(公告)号：US20080190355A1
公开(公告)日：2008-08-14
申请号：US11629584
申请日：2005-07-06
申请人： Jihong Chen , Ilya Zwieback , Avinash K. Gupta , Donovan L. Barrett , Richard H. Hopkins , Edward Semenas , Thomas A. Anderson , Andrew E. Souzis
发明人： Jihong Chen , Ilya Zwieback , Avinash K. Gupta , Donovan L. Barrett , Richard H. Hopkins , Edward Semenas , Thomas A. Anderson , Andrew E. Souzis
IPC分类号： C30B33/02 , H01B1/02
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/02581 , H01L21/02631
摘要： The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF/mm2 and preferably below 1 pF/mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm−3, and preferably to below 1·1016 cm−3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors. The deep level impurity comprises one of selected metals from the periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB and VIIIB. Vanadium is a preferred deep level element. In addition to controlling the resistivity and capacitance, a further advantage of the invention is an increase in electrical uniformity over the entire crystal and reduction in the density of crystal defects.
摘要翻译：本发明涉及用于半导体器件的半绝缘碳化硅的衬底及其制造方法。基板的电阻率高于106欧姆 - 厘米，优选高于108欧姆 - 厘米，最优选高于109欧姆 - 厘米，电容低于5 pF / mm2，最好低于1 pF / mm2。基板的电学特性由少量的加入的深度杂质控制，其浓度足够大以控制电气行为，但足够小以避免结构缺陷。底物具有无意的背景杂质浓度，包括浅供体和受体，故意降低至5.1016cm-3以下，优选低于1.1016cm-3，深层杂质的浓度较高，优选至少高两倍，比浅受体和浅供体的浓度之间的差异。深层杂质包括选自周期性基团IB，IIB，IIIB，IVB，VB，VIB，VIIB和VIIIB的金属之一。钒是首选的深层元素。除了控制电阻率和电容之外，本发明的另一个优点是在整个晶体上的电均匀性的增加和晶体缺陷密度的降低。

6. 发明申请

US20090169459A1 Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth 有权
标题翻译：铯晶体生长中的氮气的腔内吸收
公开(公告)号：US20090169459A1
公开(公告)日：2009-07-02
申请号：US12067258
申请日：2006-09-27
申请人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
发明人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
IPC分类号： C30B23/00 , C01B31/36
CPC分类号： C30B29/36 , C30B23/00 , H01L21/02378 , H01L21/02529 , H01L21/02576 , H01L21/02631
摘要： In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.
摘要翻译：在晶体生长方法中，在存在第一真空压力的情况下将晶体生长室（2）的内部加热到第一温度，由此吸收在室内的材料（4）中吸收的至少一种气体被脱气。然后在存在比第一真空压力更高的第二真空压力的情况下，在第二较高温度下将室的内部暴露于惰性气体。然后将室中的惰性气体压力减小到第一和第二真空压力之间的第三真空压力，并且室内的温度降低到第一和第二温度之间的第三温度，由此源材料（10 ）蒸发并沉积在室内的晶种（12）上。

7. 发明授权

US09017629B2 Intra-cavity gettering of nitrogen in SiC crystal growth 有权
标题翻译： SiC晶体生长中氮吸收的腔内吸收
公开(公告)号：US09017629B2
公开(公告)日：2015-04-28
申请号：US12067258
申请日：2006-09-27
申请人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
发明人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
IPC分类号： C01B31/36 , C30B23/00 , C30B29/36 , H01L21/02
CPC分类号： C30B29/36 , C30B23/00 , H01L21/02378 , H01L21/02529 , H01L21/02576 , H01L21/02631
摘要： In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.
摘要翻译：在晶体生长方法中，在存在第一真空压力的情况下将晶体生长室（2）的内部加热到第一温度，由此吸收在室内的材料（4）中吸收的至少一种气体被脱气。然后在存在比第一真空压力更高的第二真空压力的情况下，在第二较高温度下，将室的内部暴露于惰性气体。然后将室中的惰性气体压力减小到第一和第二真空压力之间的第三真空压力，并且室内的温度降低到第一和第二温度之间的第三温度，由此源材料（10 ）蒸发并沉积在室内的晶种（12）上。

8. 发明授权

US5746827A Method of producing large diameter silicon carbide crystals 失效
标题翻译：生产大直径碳化硅晶体的方法
公开(公告)号：US5746827A
公开(公告)日：1998-05-05
申请号：US579277
申请日：1995-12-27
申请人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
发明人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
IPC分类号： C30B23/00
CPC分类号： C30B23/00 , C30B29/36
摘要： A method for producing crystals of silicon carbide in a furnace. The furnace has a crucible with a cavity in which the cavity has first and second spaced-apart regions. The crucible cavity of the furnace is capable of being heated, preferably by induction or resistance heating, with insulation placed around the crucible and crucible cavity. A source material of silicon carbide is provided at the first region of the crucible cavity, and a monocrystalline seed is placed at the second region of the crucible cavity. A first growth stage is then conducted in which the first region and the second region of the crucible cavity are heated to at least the sublimation temperature of silicon carbide under substantially isothermal conditions. Then, a second growth stage is conducted in which a temperature gradient is provided between the first and the second region of the crucible cavity, such that the seed in the second crucible region is kept at a temperature lower than a temperature of the first crucible region.
摘要翻译：一种在炉中制造碳化硅晶体的方法。炉具有具有空腔的坩埚，其中空腔具有第一和第二间隔开的区域。炉的坩埚腔能够被加热，优选地通过感应或电阻加热，绝缘体放置在坩埚和坩埚腔周围。碳坩埚的源材料设置在坩埚腔的第一区域，单晶种子放置在坩埚腔的第二区域。然后进行第一生长阶段，其中坩埚腔的第一区域和第二区域在基本上等温条件下被加热至至少碳化硅的升华温度。然后，进行第二生长阶段，其中在坩埚腔的第一和第二区域之间设置温度梯度，使得第二坩埚区域中的种子保持在比第一坩埚区域的温度低的温度。

9. 发明授权

US5937317A Method of making a low resistivity silicon carbide boule 失效
标题翻译：制造低电阻率碳化硅原子的方法
公开(公告)号：US5937317A
公开(公告)日：1999-08-10
申请号：US852972
申请日：1997-05-08
申请人： Donovan L. Barrett , Richard H. Hopkins , James P. McHugh , Hudson McDonald Hobgood
发明人： Donovan L. Barrett , Richard H. Hopkins , James P. McHugh , Hudson McDonald Hobgood
IPC分类号： C30B23/00 , H01L21/20
CPC分类号： C30B23/00 , C30B23/002 , C30B29/36 , Y10S438/931
摘要： A nitrogen doped single crystal silicon carbide boule is grown by the physical vapor transport process by introducing nitrogen gas into the growth furnace. During the growth process the pressure within the furnace is maintained at a constant value, P.sub.o, where P.sub.o .ltoreq.100 Torr. This is accomplished by measuring the pressure within the furnace and providing the pressure measurement to a process controller which regulates the nitrogen introduction as nitrogen gas is incorporated into the crystal structure. The partial pressure of the nitrogen may be selected to be at a value between 1 and P.sub.o. If the desired partial pressure is less than P.sub.o, an inert gas is added to make up the difference.
摘要翻译：通过将氮气引入生长炉中，通过物理蒸气传输方法生长氮掺杂的单晶碳化硅原子。在生长过程中，炉内的压力保持在恒定值Po，其中Po = 100Torr。这是通过测量炉内的压力并将压力测量值提供给调节氮气引入的过程控制器来实现的，因为氮气被结合到晶体结构中。氮的分压可以选择在1和Po之间的值。如果所需的分压小于Po，则添加惰性气体来弥补差异。

10. 发明授权

US5501173A Method for epitaxially growing .alpha.-silicon carbide on a-axis .alpha.-silicon carbide substrates 失效
标题翻译：在a轴碳化硅基体上外延生长α-碳化硅的方法
公开(公告)号：US5501173A
公开(公告)日：1996-03-26
申请号：US138564
申请日：1993-10-18
申请人： Albert A. Burk, Jr. , Donovan L. Barrett , Hudson M. Hobgood , Rowland C. Clarke , Graeme W. Eldridge , Charles D. Brandt
发明人： Albert A. Burk, Jr. , Donovan L. Barrett , Hudson M. Hobgood , Rowland C. Clarke , Graeme W. Eldridge , Charles D. Brandt
IPC分类号： C30B25/02 , C30B25/20 , H01L21/205
CPC分类号： H01L21/02378 , C30B25/02 , C30B29/36 , H01L21/02529 , H01L21/02576 , H01L21/0262 , Y10S148/148 , Y10S438/931
摘要： A method for epitaxially growing a-axis .alpha.-SiC on an a-axis substrate is provided. A section is formed from the SiC crystal by making a pair of parallel cuts in the crystal. Each of these cuts is parallel to the c-axis of the crystal. The resulting section formed from the crystal has opposing a-face surfaces parallel to the c-axis of the crystal. A gas mixture having hydrocarbon and silane is passed over one of the a-face surfaces of the section. The hydrocarbon and silane react on this a-face surface to form an epitaxial layer of SiC. Preferably, the SiC is grown at a temperature of approximately 1450.degree. C.
摘要翻译：提供了在a轴基板上外延生长a轴α-SiC的方法。通过在晶体中形成一对平行切口，从SiC晶体形成截面。这些切口中的每一个平行于晶体的c轴。由晶体形成的部分具有与晶体的c轴平行的相对的a面表面。具有烃和硅烷的气体混合物通过该部分的一个面表面。烃和硅烷在该表面上反应形成SiC的外延层。优选地，SiC在大约1450℃的温度下生长。

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