专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5501173A Method for epitaxially growing .alpha.-silicon carbide on a-axis .alpha.-silicon carbide substrates 失效
标题翻译：在a轴碳化硅基体上外延生长α-碳化硅的方法
公开(公告)号：US5501173A
公开(公告)日：1996-03-26
申请号：US138564
申请日：1993-10-18
申请人： Albert A. Burk, Jr. , Donovan L. Barrett , Hudson M. Hobgood , Rowland C. Clarke , Graeme W. Eldridge , Charles D. Brandt
发明人： Albert A. Burk, Jr. , Donovan L. Barrett , Hudson M. Hobgood , Rowland C. Clarke , Graeme W. Eldridge , Charles D. Brandt
IPC分类号： C30B25/02 , C30B25/20 , H01L21/205
CPC分类号： H01L21/02378 , C30B25/02 , C30B29/36 , H01L21/02529 , H01L21/02576 , H01L21/0262 , Y10S148/148 , Y10S438/931
摘要： A method for epitaxially growing a-axis .alpha.-SiC on an a-axis substrate is provided. A section is formed from the SiC crystal by making a pair of parallel cuts in the crystal. Each of these cuts is parallel to the c-axis of the crystal. The resulting section formed from the crystal has opposing a-face surfaces parallel to the c-axis of the crystal. A gas mixture having hydrocarbon and silane is passed over one of the a-face surfaces of the section. The hydrocarbon and silane react on this a-face surface to form an epitaxial layer of SiC. Preferably, the SiC is grown at a temperature of approximately 1450.degree. C.
摘要翻译：提供了在a轴基板上外延生长a轴α-SiC的方法。通过在晶体中形成一对平行切口，从SiC晶体形成截面。这些切口中的每一个平行于晶体的c轴。由晶体形成的部分具有与晶体的c轴平行的相对的a面表面。具有烃和硅烷的气体混合物通过该部分的一个面表面。烃和硅烷在该表面上反应形成SiC的外延层。优选地，SiC在大约1450℃的温度下生长。

2. 发明授权

US4594173A Indium doped gallium arsenide crystals and method of preparation 失效
标题翻译：铟掺杂砷化镓晶体及其制备方法
公开(公告)号：US4594173A
公开(公告)日：1986-06-10
申请号：US602236
申请日：1984-04-19
申请人： Hudson M. Hobgood , Richard N. Thomas , Donovan L. Barrett
发明人： Hudson M. Hobgood , Richard N. Thomas , Donovan L. Barrett
IPC分类号： C30B15/00 , C30B15/04 , H01L29/14
CPC分类号： C30B15/00 , C30B29/42
摘要： A method of fabrication of low dislocation single crystal indium-doped gallium arsenide, and improved crystal structure. The method is an improved liquid encapsulant Czochralski process with an indium doping level of 5.times.10.sup.19 to 3.times.10.sup.20 indium atoms per cubic centimeter incorporated into the large diameter, long single crystal. The initial melt of elemental indium, gallium, and arsenic contain about 1 atom percent of indium, and inclusion of the indium permits high yield growth of crystals with desired near stoichiometric or slightly arsenic rich composition which exhibit the desired electrical characteristics.
摘要翻译：一种制造低位错单晶铟铟镓砷的方法，改善晶体结构。该方法是改进的液体密封剂Czochralski工艺，铟掺杂水平为5×1019至3×1020铟原子/立方厘米，并入大直径长晶体。元素铟，镓和砷的初始熔融含有约1原子％的铟，并且铟的包含允许具有期望的接近化学计量或略富砷的组合物的晶体的高产率生长，其具有期望的电特性。

3. 发明授权

US5611955A High resistivity silicon carbide substrates for high power microwave devices 失效
标题翻译：用于高功率微波器件的高电阻率碳化硅衬底
公开(公告)号：US5611955A
公开(公告)日：1997-03-18
申请号：US138566
申请日：1993-10-18
申请人： Donovan L. Barrett , Hudson M. Hobgood , James P. McHugh , Richard H. Hopkins
发明人： Donovan L. Barrett , Hudson M. Hobgood , James P. McHugh , Richard H. Hopkins
IPC分类号： C30B23/00 , C30B23/02 , C04B35/565
CPC分类号： C30B23/00 , C30B23/02 , C30B29/36 , H01L21/02529 , H01L21/02581 , H01L21/02631 , Y10S148/148
摘要： A substrate for use in semiconductor devices, fabricated of silicon carbide and having a resistivity of greater than 1500 Ohm-cm. The substrate being characterized as having deep level impurities incorporated therein, wherein the deep level elemental impurity comprises one of a selected heavy metal, hydrogen, chlorine and fluorine. The selected heavy metal being a metal found in periodic groups IIIB, IVB, VB, VIB, VIIB, VIIIB, IB and IIB.
摘要翻译：一种用于半导体器件的基板，由碳化硅制成且电阻率大于1500欧姆 - 厘米。该衬底的特征在于其中掺入深度杂质，其中深层元素杂质包括选定的重金属，氢，氯和氟中的一种。选定的重金属是定期组IIIB，IVB，VB，VIB，VIIB，VIIIB，IB和IIB中发现的金属。

4. 发明申请

US20100018455A1 System for Forming SiC Crystals Having Spatially Uniform Doping Impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的系统
公开(公告)号：US20100018455A1
公开(公告)日：2010-01-28
申请号：US12573288
申请日：2009-10-05
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： C30B23/06
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：物理蒸汽输送系统包括装有源材料的生长室和间隔开的晶种，以及至少一个具有在其内部和外部之间延伸的至少一个毛细管的胶囊，其中胶囊的内部装有掺杂剂每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

5. 发明申请

US20090169459A1 Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth 有权
标题翻译：铯晶体生长中的氮气的腔内吸收
公开(公告)号：US20090169459A1
公开(公告)日：2009-07-02
申请号：US12067258
申请日：2006-09-27
申请人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
发明人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
IPC分类号： C30B23/00 , C01B31/36
CPC分类号： C30B29/36 , C30B23/00 , H01L21/02378 , H01L21/02529 , H01L21/02576 , H01L21/02631
摘要： In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.
摘要翻译：在晶体生长方法中，在存在第一真空压力的情况下将晶体生长室（2）的内部加热到第一温度，由此吸收在室内的材料（4）中吸收的至少一种气体被脱气。然后在存在比第一真空压力更高的第二真空压力的情况下，在第二较高温度下将室的内部暴露于惰性气体。然后将室中的惰性气体压力减小到第一和第二真空压力之间的第三真空压力，并且室内的温度降低到第一和第二温度之间的第三温度，由此源材料（10 ）蒸发并沉积在室内的晶种（12）上。

6. 发明授权

US5746827A Method of producing large diameter silicon carbide crystals 失效
标题翻译：生产大直径碳化硅晶体的方法
公开(公告)号：US5746827A
公开(公告)日：1998-05-05
申请号：US579277
申请日：1995-12-27
申请人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
发明人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
IPC分类号： C30B23/00
CPC分类号： C30B23/00 , C30B29/36
摘要： A method for producing crystals of silicon carbide in a furnace. The furnace has a crucible with a cavity in which the cavity has first and second spaced-apart regions. The crucible cavity of the furnace is capable of being heated, preferably by induction or resistance heating, with insulation placed around the crucible and crucible cavity. A source material of silicon carbide is provided at the first region of the crucible cavity, and a monocrystalline seed is placed at the second region of the crucible cavity. A first growth stage is then conducted in which the first region and the second region of the crucible cavity are heated to at least the sublimation temperature of silicon carbide under substantially isothermal conditions. Then, a second growth stage is conducted in which a temperature gradient is provided between the first and the second region of the crucible cavity, such that the seed in the second crucible region is kept at a temperature lower than a temperature of the first crucible region.
摘要翻译：一种在炉中制造碳化硅晶体的方法。炉具有具有空腔的坩埚，其中空腔具有第一和第二间隔开的区域。炉的坩埚腔能够被加热，优选地通过感应或电阻加热，绝缘体放置在坩埚和坩埚腔周围。碳坩埚的源材料设置在坩埚腔的第一区域，单晶种子放置在坩埚腔的第二区域。然后进行第一生长阶段，其中坩埚腔的第一区域和第二区域在基本上等温条件下被加热至至少碳化硅的升华温度。然后，进行第二生长阶段，其中在坩埚腔的第一和第二区域之间设置温度梯度，使得第二坩埚区域中的种子保持在比第一坩埚区域的温度低的温度。

7. 发明授权

US07608524B2 Method of and system for forming SiC crystals having spatially uniform doping impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的方法和系统
公开(公告)号：US07608524B2
公开(公告)日：2009-10-27
申请号：US11405368
申请日：2006-04-17
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： H01L21/20
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：在物理蒸气传输方法和系统中，提供了充满源材料的生长室和间隔开的晶种。至少一个胶囊具有在其内部和外部之间延伸的至少一个毛细管，其中胶囊的内部充有掺杂剂。每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

8. 发明授权

US5937317A Method of making a low resistivity silicon carbide boule 失效
标题翻译：制造低电阻率碳化硅原子的方法
公开(公告)号：US5937317A
公开(公告)日：1999-08-10
申请号：US852972
申请日：1997-05-08
申请人： Donovan L. Barrett , Richard H. Hopkins , James P. McHugh , Hudson McDonald Hobgood
发明人： Donovan L. Barrett , Richard H. Hopkins , James P. McHugh , Hudson McDonald Hobgood
IPC分类号： C30B23/00 , H01L21/20
CPC分类号： C30B23/00 , C30B23/002 , C30B29/36 , Y10S438/931
摘要： A nitrogen doped single crystal silicon carbide boule is grown by the physical vapor transport process by introducing nitrogen gas into the growth furnace. During the growth process the pressure within the furnace is maintained at a constant value, P.sub.o, where P.sub.o .ltoreq.100 Torr. This is accomplished by measuring the pressure within the furnace and providing the pressure measurement to a process controller which regulates the nitrogen introduction as nitrogen gas is incorporated into the crystal structure. The partial pressure of the nitrogen may be selected to be at a value between 1 and P.sub.o. If the desired partial pressure is less than P.sub.o, an inert gas is added to make up the difference.
摘要翻译：通过将氮气引入生长炉中，通过物理蒸气传输方法生长氮掺杂的单晶碳化硅原子。在生长过程中，炉内的压力保持在恒定值Po，其中Po = 100Torr。这是通过测量炉内的压力并将压力测量值提供给调节氮气引入的过程控制器来实现的，因为氮气被结合到晶体结构中。氮的分压可以选择在1和Po之间的值。如果所需的分压小于Po，则添加惰性气体来弥补差异。

9. 发明授权

US08216369B2 System for forming SiC crystals having spatially uniform doping impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的系统
公开(公告)号：US08216369B2
公开(公告)日：2012-07-10
申请号：US12573288
申请日：2009-10-05
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：物理蒸汽输送系统包括装有源材料的生长室和间隔开的晶种，以及至少一个具有在其内部和外部之间延伸的至少一个毛细管的胶囊，其中胶囊的内部装有掺杂剂每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

10. 发明授权

US5683507A Apparatus for growing large silicon carbide single crystals 失效
标题翻译：用于生长大型碳化硅单晶的装置
公开(公告)号：US5683507A
公开(公告)日：1997-11-04
申请号：US523303
申请日：1995-09-05
申请人： Donovan L. Barrett , Raymond G. Seidensticker, deceased , Richard H. Hopkins
发明人： Donovan L. Barrett , Raymond G. Seidensticker, deceased , Richard H. Hopkins
IPC分类号： C30B23/00 , C30B35/00
CPC分类号： C30B23/00 , C30B29/36 , Y10S117/90 , Y10S117/902 , Y10T117/10 , Y10T117/1008 , Y10T117/1016
摘要： An apparatus for growing single-polytype, single crystals of silicon carbide utilizing physical vapor transport as the crystal growth technique. The apparatus has a furnace which has a carbon crucible with walls that border and define a crucible cavity. A silicon carbide source material provided at a first location of the crucible cavity, and a monocrystalline silicon carbide seed is provided at a second location of the crucible cavity. A heat path is also provided in the furnace above the crucible cavity. The crucible has a stepped surface that extends into the crucible cavity. The stepped surface has a mounting portion upon which the seed crystal is mounted. The mounting portion of the stepped surface is bordered at one side by the crucible cavity and is bordered at an opposite side by the furnace heat path. The stepped surface also has a sidewall that is bordered at one side by and surrounds the furnace heat path. The apparatus may also have a thermal insulating member, in which a side of the stepped surface sidewall opposite to the furnace heat path is bordered by the thermal insulating member.
摘要翻译：使用物理气相传输作为晶体生长技术生长单多晶单晶碳化硅的装置。该装置具有炉子，该炉具有边界并限定坩埚腔的壁的碳坩埚。提供在坩埚腔的第一位置处的碳化硅源材料和在坩埚腔的第二位置处提供单晶碳化硅种子。在坩埚腔上方的炉内还设置有热路径。坩埚具有延伸到坩埚腔中的台阶表面。台阶表面具有安装在晶圆上的安装部分。阶梯式表面的安装部分在坩埚腔的一侧边界，并且通过炉子热路与另一边相接。台阶表面还具有侧壁，并且围绕炉子热路径包围着侧壁。该设备还可以具有绝热构件，其中与炉热路相对的台阶表面侧壁的一侧由隔热构件界定。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式