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1. 发明授权

US4369458A Self-aligned, flip-chip focal plane array configuration 失效
标题翻译：自对准，倒装芯片焦平面阵列配置
公开(公告)号：US4369458A
公开(公告)日：1983-01-18
申请号：US165158
申请日：1980-07-01
申请人： Richard N. Thomas , Michael M. Sopira
发明人： Richard N. Thomas , Michael M. Sopira
IPC分类号： H01L21/60 , H01L23/485 , H01L25/065 , H01L27/148 , H01L31/0224 , H01L29/78 , H01L23/48 , H01L27/02 , H01L27/14
CPC分类号： H01L24/10 , H01L24/13 , H01L24/81 , H01L25/0657 , H01L27/14881 , H01L31/022408 , H01L2224/13 , H01L2224/13099 , H01L2224/13144 , H01L2224/81136 , H01L2224/81801 , H01L2225/06513 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/01077 , H01L2924/01079 , H01L2924/14 , H01L2924/30105
摘要： A focal plane array including a first integrated circuit for infrared radiation (IR) detection and a second integrated circuit for signal processing is assembled in a flip-chip structural configuration. Each integrated circuit includes an array of metallic contacts on a surface thereof for interconnection in the flip-chip arrangement. The contact array of the IR detector includes a substantially greater number of contacts than the contact array of the signal processor. Consequently, it is not a prerequisite to precisely align the two integrated circuits in a one-to-one contact relationship for the flip-chip bonding operation therebetween. Thus, each metallic contact of the signal processor may be roughly aligned and bonded to a corresponding group of metallic contacts of the IR detector array without altering significantly the operation of the overall focal plane array as long as at least one metallic contact of the IR detector array is included in each corresponding contact group. As a result of this structural improvement, a method of batch-fabricating a plurality of high-density focal plane arrays may be accomplished quite expeditiously.
摘要翻译：包括用于红外辐射（IR）检测的第一集成电路和用于信号处理的第二集成电路的焦平面阵列以倒装芯片结构配置组装。每个集成电路包括在其表面上的用于在倒装芯片布置中互连的金属触点阵列。 IR检测器的接触阵列包括比信号处理器的接触阵列大得多的触点数量。因此，不是将两个集成电路以一对一的接触关系精确对准，而不是两者之间的倒装芯片接合操作的先决条件。因此，只要IR检测器的至少一个金属接触点，信号处理器的每个金属接触件可以大致对准并且结合到IR检测器阵列的相应组的金属接触件，而不会显着改变整个焦平面阵列的操作阵列包含在每个相应的联系人组中。作为这种结构改进的结果，可以非常迅速地完成批量制造多个高密度焦平面阵列的方法。

2. 发明授权

US5746827A Method of producing large diameter silicon carbide crystals 失效
标题翻译：生产大直径碳化硅晶体的方法
公开(公告)号：US5746827A
公开(公告)日：1998-05-05
申请号：US579277
申请日：1995-12-27
申请人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
发明人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
IPC分类号： C30B23/00
CPC分类号： C30B23/00 , C30B29/36
摘要： A method for producing crystals of silicon carbide in a furnace. The furnace has a crucible with a cavity in which the cavity has first and second spaced-apart regions. The crucible cavity of the furnace is capable of being heated, preferably by induction or resistance heating, with insulation placed around the crucible and crucible cavity. A source material of silicon carbide is provided at the first region of the crucible cavity, and a monocrystalline seed is placed at the second region of the crucible cavity. A first growth stage is then conducted in which the first region and the second region of the crucible cavity are heated to at least the sublimation temperature of silicon carbide under substantially isothermal conditions. Then, a second growth stage is conducted in which a temperature gradient is provided between the first and the second region of the crucible cavity, such that the seed in the second crucible region is kept at a temperature lower than a temperature of the first crucible region.
摘要翻译：一种在炉中制造碳化硅晶体的方法。炉具有具有空腔的坩埚，其中空腔具有第一和第二间隔开的区域。炉的坩埚腔能够被加热，优选地通过感应或电阻加热，绝缘体放置在坩埚和坩埚腔周围。碳坩埚的源材料设置在坩埚腔的第一区域，单晶种子放置在坩埚腔的第二区域。然后进行第一生长阶段，其中坩埚腔的第一区域和第二区域在基本上等温条件下被加热至至少碳化硅的升华温度。然后，进行第二生长阶段，其中在坩埚腔的第一和第二区域之间设置温度梯度，使得第二坩埚区域中的种子保持在比第一坩埚区域的温度低的温度。

3. 发明授权

US4246590A Restoration of high infrared sensitivity in extrinsic silicon detectors 失效
标题翻译：在外部硅探测器中恢复高红外灵敏度
公开(公告)号：US4246590A
公开(公告)日：1981-01-20
申请号：US5535
申请日：1979-01-22
申请人： Richard N. Thomas , Timothy T. Braggins
发明人： Richard N. Thomas , Timothy T. Braggins
IPC分类号： H01L21/322 , H01L27/148 , H01L31/18 , H01L27/14
CPC分类号： H01L31/186 , H01L21/3221 , H01L27/14875 , Y02E10/50 , Y02P70/521 , Y10S257/928
摘要： A method and apparatus for removing heavy metal impurities such as gold, silver, nickel and copper from a crystalline substrate is described incorporating a damaged crystalline layer which may be formed by excessive doping to trap or getter heavy metal impurities to enhance the majority carrier lifetime of the detector material.The invention overcomes the problem of degraded responsivity in radiant energy crystalline detectors after high temperature processing, in excess of 900.degree. C., which permits surface contaminants such as gold, silver, nickel and copper to diffuse through the detector material raising the net donor density.
摘要翻译：描述了一种用于从结晶基底去除重金属杂质如金，银，镍和铜的方法和装置，该方法和装置包括可以通过过度掺杂形成的损坏的结晶层，以捕获或吸收重金属杂质以增加多数载流子寿命探测器材料。本发明克服了在高温处理后超过900℃的辐射能结晶探测器的响应度降低的问题，其允许诸如金，银，镍和铜的表面污染物通过检测器材料扩散，从而提高净供体密度。

4. 发明授权

US4194199A Display apparatus 失效
标题翻译：显示装置
公开(公告)号：US4194199A
公开(公告)日：1980-03-18
申请号：US784304
申请日：1977-04-04
申请人： Brian Shepherd , Richard N. Thomas
发明人： Brian Shepherd , Richard N. Thomas
IPC分类号： G09F9/00 , G01D7/04 , G01R13/02 , G01R13/40 , G09F9/30 , G09G3/12 , G06F3/14
CPC分类号： G01R13/405 , G01D7/04 , G01R13/02
摘要： A display apparatus for displaying a plurality of physical parameters has a plurality of electrically-operable display regions which are to be operated in accordance with respective physical parameters. The display regions each comprise a plurality of display sections disposed in spaced array, an electrode which is common to all display sections in that display region, and a plurality of individual electrodes associated with individual and respective ones of the display sections in that display region. The electrodes of the said plurality of individual electrodes associated with one display region are coupled to respective ones of the said plurality of individual electrodes associated with another display region to form respective groups of electrodes. The display apparatus includes electric circuit means for operating the display regions in accordance with the values of the respective physical parameters, the circuit means being arranged sequentially to energize the said groups of electrodes and simultaneously to energize the said common electrodes in accordance with the values of the respective physical parameters.
摘要翻译：用于显示多个物理参数的显示装置具有多个可电动操作的显示区域，这些显示区域将根据相应的物理参数进行操作。显示区域各自包括以间隔开的阵列布置的多个显示部分，对于该显示区域中的所有显示部分是共同的电极，以及与该显示区域中的各个显示部分和相应的显示部分相关联的多个单独电极。与一个显示区域相关联的所述多个单独电极的电极耦合到与另一个显示区域相关联的所述多个单独电极中的相应的电极，以形成相应的电极组。显示装置包括用于根据各个物理参数的值来操作显示区域的电路装置，电路装置被依次布置以激励所述电极组并且同时根据所述电极的值各自的物理参数。

5. 发明授权

US4187505A Display apparatus 失效
标题翻译：显示装置
公开(公告)号：US4187505A
公开(公告)日：1980-02-05
申请号：US847386
申请日：1977-10-31
申请人： Colin A. Morley , Richard N. Thomas , Bela Kollar
发明人： Colin A. Morley , Richard N. Thomas , Bela Kollar
IPC分类号： G01R13/02 , G01R13/40 , H03M1/00 , G01D7/00
CPC分类号： G01R13/405 , G01R13/02 , H03M1/60
摘要： Display apparatus for displaying the magnitude of a physical parameter includes a plurality of display regions each of which contains a plurality of electrically-operable display sections. The display apparatus also includes an electric circuit means responsive to an electric signal representative of the said magnitude which is arranged to operate the display sections in a cyclic manner in accordance with that magnitude. To this end, the electric circuit means is arranged, during a first period of each cycle, to effect operation of any display regions in which all sections therein require to be operated and, during a second period of each cycle, to effect appropriate operation of any other display region in which only at least one of the display sections thereof require to be operated.
摘要翻译：用于显示物理参数的大小的显示装置包括多个显示区域，每个显示区域包含多个电动操作显示部分。显示装置还包括响应于表示所述大小的电信号的电路装置，其被布置为根据该大小以循环方式操作显示部分。为此，电路装置在每个周期的第一周期期间被布置成实现任何显示区域的操作，其中其中所有部分都需要被操作，并且在每个周期的第二周期期间，只有其中至少一个显示部分需要操作的任何其他显示区域。

6. 发明授权

US4416054A Method of batch-fabricating flip-chip bonded dual integrated circuit arrays 失效
标题翻译：倒装芯片接合双集成电路阵列批量制造方法
公开(公告)号：US4416054A
公开(公告)日：1983-11-22
申请号：US427333
申请日：1982-09-29
申请人： Richard N. Thomas , Michael M. Sopira
发明人： Richard N. Thomas , Michael M. Sopira
IPC分类号： H01L21/60 , H01L23/485 , H01L25/18 , H01L27/148 , H01L31/0224 , H01L21/28
CPC分类号： H01L24/10 , H01L24/13 , H01L24/81 , H01L25/18 , H01L27/14881 , H01L31/022408 , H01L2224/13 , H01L2224/13099 , H01L2224/13144 , H01L2224/81136 , H01L2224/81801 , H01L2225/06513 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/01077 , H01L2924/01079 , H01L2924/14 , H01L2924/30105
摘要： A focal plane array including a first integrated circuit for infrared radiation (IR) detection and a second integrated circuit for signal processing is assembled in a flip-chip structural configuration. Each integrated circuit includes an array of metallic contacts on a surface thereof for interconnection in the flip-chip arrangement. The contact array of the IR detector includes a substantially greater number of contacts than the contact array of the signal processor. Consequently, it is not a prerequisite to precisely align the two integrated circuits in a one-to-one contact relationship for the flip-chip bonding operation therebetween. Thus, each metallic contact of the signal processor may be roughly aligned and bonded to a corresponding group of metallic contacts of the IR detector array without altering significantly the operation of the overall focal plane array as long as at least one metallic contact of the IR detector array is included in each corresponding contact group. As a result of this structural improvement, a method of batch-fabricating a plurality of high-density focal plane arrays may be accomplished quite expeditiously.
摘要翻译：包括用于红外辐射（IR）检测的第一集成电路和用于信号处理的第二集成电路的焦平面阵列以倒装芯片结构配置组装。每个集成电路包括在其表面上的用于在倒装芯片布置中互连的金属触点阵列。 IR检测器的接触阵列包括比信号处理器的接触阵列大得多的触点数量。因此，不是将两个集成电路以一对一的接触关系精确对准的先决条件，因为它们之间的倒装芯片接合操作。因此，只要IR检测器的至少一个金属接触点，信号处理器的每个金属接触件可以大致对准并且结合到IR检测器阵列的相应组的金属接触件，而不会显着改变整个焦平面阵列的操作阵列包含在每个相应的联系人组中。作为这种结构改进的结果，可以非常迅速地完成批量制造多个高密度焦平面阵列的方法。

7. 发明授权

US4594173A Indium doped gallium arsenide crystals and method of preparation 失效
标题翻译：铟掺杂砷化镓晶体及其制备方法
公开(公告)号：US4594173A
公开(公告)日：1986-06-10
申请号：US602236
申请日：1984-04-19
申请人： Hudson M. Hobgood , Richard N. Thomas , Donovan L. Barrett
发明人： Hudson M. Hobgood , Richard N. Thomas , Donovan L. Barrett
IPC分类号： C30B15/00 , C30B15/04 , H01L29/14
CPC分类号： C30B15/00 , C30B29/42
摘要： A method of fabrication of low dislocation single crystal indium-doped gallium arsenide, and improved crystal structure. The method is an improved liquid encapsulant Czochralski process with an indium doping level of 5.times.10.sup.19 to 3.times.10.sup.20 indium atoms per cubic centimeter incorporated into the large diameter, long single crystal. The initial melt of elemental indium, gallium, and arsenic contain about 1 atom percent of indium, and inclusion of the indium permits high yield growth of crystals with desired near stoichiometric or slightly arsenic rich composition which exhibit the desired electrical characteristics.
摘要翻译：一种制造低位错单晶铟铟镓砷的方法，改善晶体结构。该方法是改进的液体密封剂Czochralski工艺，铟掺杂水平为5×1019至3×1020铟原子/立方厘米，并入大直径长晶体。元素铟，镓和砷的初始熔融含有约1原子％的铟，并且铟的包含允许具有期望的接近化学计量或略富砷的组合物的晶体的高产率生长，其具有期望的电特性。

8. 发明授权

US4416051A Restoration of high infrared sensitivity in extrinsic silicon detectors 失效
标题翻译：在外部硅探测器中恢复高红外灵敏度
公开(公告)号：US4416051A
公开(公告)日：1983-11-22
申请号：US166421
申请日：1980-07-07
申请人： Richard N. Thomas , Timothy T. Braggins
发明人： Richard N. Thomas , Timothy T. Braggins
IPC分类号： H01L21/322 , H01L21/324 , H01L27/148 , H01L31/18 , H01L21/225
CPC分类号： H01L31/186 , H01L21/3221 , H01L21/324 , H01L27/14875 , Y02E10/50 , Y02P70/521
摘要： A method and apparatus for removing heavy metal impurities such as gold, silver, nickel and copper from a crystalline substrate is described incorporating a damaged crystalline layer which may be formed by excessive doping to trap or getter heavy metal impurities to enhance the majority carrier lifetime of the detector material.The invention overcomes the problem of degraded responsivity in radiant energy crystalline detectors after high temperature processing, in excess of 900.degree. C., which permits surface contaminants such as gold, silver, nickel and copper to diffuse through the detector material raising the net donor density.
摘要翻译：描述了一种用于从结晶基底去除重金属杂质如金，银，镍和铜的方法和装置，该方法和装置包括可以通过过度掺杂形成的损坏的结晶层，以捕获或吸收重金属杂质以增加多数载流子寿命探测器材料。本发明克服了在高温处理后超过900℃的辐射能晶体探测器的响应度降低的问题，其允许诸如金，银，镍和铜的表面污染物通过检测器材料扩散，从而提高净供体密度。

9. 发明授权

US4148052A Radiant energy sensor 失效
标题翻译：辐射能量传感器
公开(公告)号：US4148052A
公开(公告)日：1979-04-03
申请号：US841408
申请日：1977-10-12
申请人： Harvey C. Nathanson , Richard N. Thomas
发明人： Harvey C. Nathanson , Richard N. Thomas
IPC分类号： H01L27/148 , H01L27/14
CPC分类号： H01L27/14856 , H01L27/14818 , H01L27/14875
摘要： An improved radiant energy sensor incorporating a number of elongated detectors, reflecting means for reflecting incident light into the elongated detectors, and circuitry on a crystalline substrate, is described wherein the reflecting means directs radiant energy into the elongated detectors.
摘要翻译：描述了一种改进的辐射能量传感器，其包括多个细长检测器，用于将入射光反射到细长检测器中的反射装置，以及结晶衬底上的电路，其中反射装置将辐射能引导到细长检测器中。

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