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1. 发明授权

US07608524B2 Method of and system for forming SiC crystals having spatially uniform doping impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的方法和系统
公开(公告)号：US07608524B2
公开(公告)日：2009-10-27
申请号：US11405368
申请日：2006-04-17
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： H01L21/20
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：在物理蒸气传输方法和系统中，提供了充满源材料的生长室和间隔开的晶种。至少一个胶囊具有在其内部和外部之间延伸的至少一个毛细管，其中胶囊的内部充有掺杂剂。每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

2. 发明申请

US20100018455A1 System for Forming SiC Crystals Having Spatially Uniform Doping Impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的系统
公开(公告)号：US20100018455A1
公开(公告)日：2010-01-28
申请号：US12573288
申请日：2009-10-05
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： C30B23/06
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：物理蒸汽输送系统包括装有源材料的生长室和间隔开的晶种，以及至少一个具有在其内部和外部之间延伸的至少一个毛细管的胶囊，其中胶囊的内部装有掺杂剂每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

3. 发明申请

US20090169459A1 Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth 有权
标题翻译：铯晶体生长中的氮气的腔内吸收
公开(公告)号：US20090169459A1
公开(公告)日：2009-07-02
申请号：US12067258
申请日：2006-09-27
申请人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
发明人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
IPC分类号： C30B23/00 , C01B31/36
CPC分类号： C30B29/36 , C30B23/00 , H01L21/02378 , H01L21/02529 , H01L21/02576 , H01L21/02631
摘要： In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.
摘要翻译：在晶体生长方法中，在存在第一真空压力的情况下将晶体生长室（2）的内部加热到第一温度，由此吸收在室内的材料（4）中吸收的至少一种气体被脱气。然后在存在比第一真空压力更高的第二真空压力的情况下，在第二较高温度下将室的内部暴露于惰性气体。然后将室中的惰性气体压力减小到第一和第二真空压力之间的第三真空压力，并且室内的温度降低到第一和第二温度之间的第三温度，由此源材料（10 ）蒸发并沉积在室内的晶种（12）上。

4. 发明申请

US20080190355A1 Low-Doped Semi-Insulating Sic Crystals and Method 审中-公开
标题翻译：低掺杂半绝缘矽晶体和方法
公开(公告)号：US20080190355A1
公开(公告)日：2008-08-14
申请号：US11629584
申请日：2005-07-06
申请人： Jihong Chen , Ilya Zwieback , Avinash K. Gupta , Donovan L. Barrett , Richard H. Hopkins , Edward Semenas , Thomas A. Anderson , Andrew E. Souzis
发明人： Jihong Chen , Ilya Zwieback , Avinash K. Gupta , Donovan L. Barrett , Richard H. Hopkins , Edward Semenas , Thomas A. Anderson , Andrew E. Souzis
IPC分类号： C30B33/02 , H01B1/02
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/02581 , H01L21/02631
摘要： The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF/mm2 and preferably below 1 pF/mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm−3, and preferably to below 1·1016 cm−3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors. The deep level impurity comprises one of selected metals from the periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB and VIIIB. Vanadium is a preferred deep level element. In addition to controlling the resistivity and capacitance, a further advantage of the invention is an increase in electrical uniformity over the entire crystal and reduction in the density of crystal defects.
摘要翻译：本发明涉及用于半导体器件的半绝缘碳化硅的衬底及其制造方法。基板的电阻率高于106欧姆 - 厘米，优选高于108欧姆 - 厘米，最优选高于109欧姆 - 厘米，电容低于5 pF / mm2，最好低于1 pF / mm2。基板的电学特性由少量的加入的深度杂质控制，其浓度足够大以控制电气行为，但足够小以避免结构缺陷。底物具有无意的背景杂质浓度，包括浅供体和受体，故意降低至5.1016cm-3以下，优选低于1.1016cm-3，深层杂质的浓度较高，优选至少高两倍，比浅受体和浅供体的浓度之间的差异。深层杂质包括选自周期性基团IB，IIB，IIIB，IVB，VB，VIB，VIIB和VIIIB的金属之一。钒是首选的深层元素。除了控制电阻率和电容之外，本发明的另一个优点是在整个晶体上的电均匀性的增加和晶体缺陷密度的降低。

5. 发明授权

US08216369B2 System for forming SiC crystals having spatially uniform doping impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的系统
公开(公告)号：US08216369B2
公开(公告)日：2012-07-10
申请号：US12573288
申请日：2009-10-05
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：物理蒸汽输送系统包括装有源材料的生长室和间隔开的晶种，以及至少一个具有在其内部和外部之间延伸的至少一个毛细管的胶囊，其中胶囊的内部装有掺杂剂每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

6. 发明授权

US09017629B2 Intra-cavity gettering of nitrogen in SiC crystal growth 有权
标题翻译： SiC晶体生长中氮吸收的腔内吸收
公开(公告)号：US09017629B2
公开(公告)日：2015-04-28
申请号：US12067258
申请日：2006-09-27
申请人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
发明人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
IPC分类号： C01B31/36 , C30B23/00 , C30B29/36 , H01L21/02
CPC分类号： C30B29/36 , C30B23/00 , H01L21/02378 , H01L21/02529 , H01L21/02576 , H01L21/02631
摘要： In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.
摘要翻译：在晶体生长方法中，在存在第一真空压力的情况下将晶体生长室（2）的内部加热到第一温度，由此吸收在室内的材料（4）中吸收的至少一种气体被脱气。然后在存在比第一真空压力更高的第二真空压力的情况下，在第二较高温度下，将室的内部暴露于惰性气体。然后将室中的惰性气体压力减小到第一和第二真空压力之间的第三真空压力，并且室内的温度降低到第一和第二温度之间的第三温度，由此源材料（10 ）蒸发并沉积在室内的晶种（12）上。

7. 发明申请

US20110303884A1 SiC Crystals Having Spatially Uniform Doping Impurities 审中-公开
标题翻译：具有空间均匀掺杂杂质的SiC晶体
公开(公告)号：US20110303884A1
公开(公告)日：2011-12-15
申请号：US13217668
申请日：2011-08-25
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew N. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew N. Souzis
IPC分类号： H01B1/04
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule.
摘要翻译：升华生长的碳化硅（SiC）单晶棒包括在其升华生长过程中引入到SiC单晶晶锭中的深度掺杂剂，使得在不超过50％连续长度的所述坯料，所述坯料中心处的深度掺杂剂浓度与所述焦头连续部分中的深度掺杂剂的平均浓度相差不超过25％。

8. 发明申请

US20120225004A1 Halosilane Assisted PVT Growth of SiC 有权
标题翻译：碳硅辅助PVT生长
公开(公告)号：US20120225004A1
公开(公告)日：2012-09-06
申请号：US13471866
申请日：2012-05-15
申请人： Ilya Zwieback , Thomas E. Anderson , Avinash K. Gupta
发明人： Ilya Zwieback , Thomas E. Anderson , Avinash K. Gupta
IPC分类号： C30B25/02 , C01B31/36 , C30B25/14 , C30B25/10 , C30B25/20 , C30B25/08
CPC分类号： C30B23/00 , C30B29/36
摘要： In a physical vapor transport growth technique for silicon carbide a silicon carbide powder and a silicon carbide seed crystal are introduced into a physical vapor transport growth system and halosilane gas is introduced separately into the system. The source powder, the halosilane gas, and the seed crystal are heated in a manner that encourages physical vapor transport growth of silicon carbide on the seed crystal, as well as chemical transformations in the gas phase leading to reactions between halogen and chemical elements present in the growth system.
摘要翻译：在用于碳化硅的物理蒸气传输增长技术中，碳化硅粉末和碳化硅晶种被引入物理蒸气传输生长系统中，并且卤代硅烷气体被单独引入到系统中。源粉末，卤代硅烷气体和晶种被加热，以促进碳化硅在晶种上的物理蒸汽传输生长，以及气相中的化学转化，导致卤素和存在于卤素中的化学元素之间的反应成长系统。

9. 发明申请

US20090053125A1 Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals 审中-公开
标题翻译：在SiC单晶的升华生长过程中稳定4H多晶型
公开(公告)号：US20090053125A1
公开(公告)日：2009-02-26
申请号：US12194066
申请日：2008-08-19
申请人： Avinash K. Gupta , Thomas E. Anderson , Ping Wu , Ilya Zwieback
发明人： Avinash K. Gupta , Thomas E. Anderson , Ping Wu , Ilya Zwieback
IPC分类号： C01B31/36 , C30B23/06
CPC分类号： C30B29/36 , C30B23/00
摘要： A SiC single crystal is grown by physical vapor transport (PVT) in a graphite growth chamber, the interior of which is charged with a SiC source material and a SiC single crystal seed in spaced relation. During PVT growth of the SiC single crystal, the growth chamber further includes Ce. The SiC single crystal grows on the SiC single crystal seed in response to heating the interior of the growth chamber to a growth temperature and in the presence of a temperature gradient in the growth chamber whereupon the temperature of the SiC single crystal seed is lower than the temperature of the SiC source material. The Ce can include either Ce silicide or Ce carbide.
摘要翻译：通过在石墨生长室中的物理气相传输（PVT）生长SiC单晶，其内部以间隔开的关系装载有SiC源材料和SiC单晶种子。在SiC单晶的PVT生长期间，生长室还包括Ce。 SiC单晶在SiC单晶种子上生长，响应于将生长室的内部加热至生长温度，并且在生长室中存在温度梯度的情况下，SiC单晶种子的温度低于 SiC源材料的温度。 Ce可以包括Ce硅化物或Ce碳化物。

10. 发明授权

US08361227B2 Silicon carbide single crystals with low boron content 有权
标题翻译：低硼含量的碳化硅单晶
公开(公告)号：US08361227B2
公开(公告)日：2013-01-29
申请号：US11900242
申请日：2007-09-11
申请人： Ilya Zwieback , Thomas E. Anderson , Avinash K. Gupta
发明人： Ilya Zwieback , Thomas E. Anderson , Avinash K. Gupta
IPC分类号： C30B21/02
CPC分类号： C30B23/00 , C30B29/36
摘要： In a crystal growth method, an enclosed growth crucible is provided inside of a growth chamber. The growth crucible has polycrystalline source material and a seed crystal disposed in spaced relation therein. The interior of the growth crucible is heated whereupon a temperature gradient forms between the source material and the seed crystal. The temperature gradient is sufficient to cause the source material to sublimate and be transported to the seed crystal where it precipitates on the seed crystal. A gas mixture is caused to flow into the growth crucible and between the polycrystalline source material and an interior surface of the growth crucible. The gas mixture reacts with an unwanted element in the body of the growth crucible to form a gaseous byproduct which then flows through the body of the growth crucible to the exterior of the growth crucible.
摘要翻译：在晶体生长方法中，在生长室的内部设置封闭的生长坩埚。生长坩埚具有多晶源材料和间隔开设置的晶种。加热生长坩埚的内部，由此在源材料和晶种之间形成温度梯度。温度梯度足以使源材料升华并被输送到籽晶上，在晶种上沉淀在晶种上。导致气体混合物流入生长坩埚中并且在多晶源材料和生长坩埚的内表面之间。气体混合物与生长坩埚的主体中的不需要的元素反应以形成气态副产物，然后气体副产物通过生长坩埚的主体流到生长坩埚的外部。

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