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1. 发明授权

US5937317A Method of making a low resistivity silicon carbide boule 失效
标题翻译：制造低电阻率碳化硅原子的方法
公开(公告)号：US5937317A
公开(公告)日：1999-08-10
申请号：US852972
申请日：1997-05-08
申请人： Donovan L. Barrett , Richard H. Hopkins , James P. McHugh , Hudson McDonald Hobgood
发明人： Donovan L. Barrett , Richard H. Hopkins , James P. McHugh , Hudson McDonald Hobgood
IPC分类号： C30B23/00 , H01L21/20
CPC分类号： C30B23/00 , C30B23/002 , C30B29/36 , Y10S438/931
摘要： A nitrogen doped single crystal silicon carbide boule is grown by the physical vapor transport process by introducing nitrogen gas into the growth furnace. During the growth process the pressure within the furnace is maintained at a constant value, P.sub.o, where P.sub.o .ltoreq.100 Torr. This is accomplished by measuring the pressure within the furnace and providing the pressure measurement to a process controller which regulates the nitrogen introduction as nitrogen gas is incorporated into the crystal structure. The partial pressure of the nitrogen may be selected to be at a value between 1 and P.sub.o. If the desired partial pressure is less than P.sub.o, an inert gas is added to make up the difference.
摘要翻译：通过将氮气引入生长炉中，通过物理蒸气传输方法生长氮掺杂的单晶碳化硅原子。在生长过程中，炉内的压力保持在恒定值Po，其中Po = 100Torr。这是通过测量炉内的压力并将压力测量值提供给调节氮气引入的过程控制器来实现的，因为氮气被结合到晶体结构中。氮的分压可以选择在1和Po之间的值。如果所需的分压小于Po，则添加惰性气体来弥补差异。

2. 发明授权

US5611955A High resistivity silicon carbide substrates for high power microwave devices 失效
标题翻译：用于高功率微波器件的高电阻率碳化硅衬底
公开(公告)号：US5611955A
公开(公告)日：1997-03-18
申请号：US138566
申请日：1993-10-18
申请人： Donovan L. Barrett , Hudson M. Hobgood , James P. McHugh , Richard H. Hopkins
发明人： Donovan L. Barrett , Hudson M. Hobgood , James P. McHugh , Richard H. Hopkins
IPC分类号： C30B23/00 , C30B23/02 , C04B35/565
CPC分类号： C30B23/00 , C30B23/02 , C30B29/36 , H01L21/02529 , H01L21/02581 , H01L21/02631 , Y10S148/148
摘要： A substrate for use in semiconductor devices, fabricated of silicon carbide and having a resistivity of greater than 1500 Ohm-cm. The substrate being characterized as having deep level impurities incorporated therein, wherein the deep level elemental impurity comprises one of a selected heavy metal, hydrogen, chlorine and fluorine. The selected heavy metal being a metal found in periodic groups IIIB, IVB, VB, VIB, VIIB, VIIIB, IB and IIB.
摘要翻译：一种用于半导体器件的基板，由碳化硅制成且电阻率大于1500欧姆 - 厘米。该衬底的特征在于其中掺入深度杂质，其中深层元素杂质包括选定的重金属，氢，氯和氟中的一种。选定的重金属是定期组IIIB，IVB，VB，VIB，VIIB，VIIIB，IB和IIB中发现的金属。

3. 发明授权

US5746827A Method of producing large diameter silicon carbide crystals 失效
标题翻译：生产大直径碳化硅晶体的方法
公开(公告)号：US5746827A
公开(公告)日：1998-05-05
申请号：US579277
申请日：1995-12-27
申请人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
发明人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
IPC分类号： C30B23/00
CPC分类号： C30B23/00 , C30B29/36
摘要： A method for producing crystals of silicon carbide in a furnace. The furnace has a crucible with a cavity in which the cavity has first and second spaced-apart regions. The crucible cavity of the furnace is capable of being heated, preferably by induction or resistance heating, with insulation placed around the crucible and crucible cavity. A source material of silicon carbide is provided at the first region of the crucible cavity, and a monocrystalline seed is placed at the second region of the crucible cavity. A first growth stage is then conducted in which the first region and the second region of the crucible cavity are heated to at least the sublimation temperature of silicon carbide under substantially isothermal conditions. Then, a second growth stage is conducted in which a temperature gradient is provided between the first and the second region of the crucible cavity, such that the seed in the second crucible region is kept at a temperature lower than a temperature of the first crucible region.
摘要翻译：一种在炉中制造碳化硅晶体的方法。炉具有具有空腔的坩埚，其中空腔具有第一和第二间隔开的区域。炉的坩埚腔能够被加热，优选地通过感应或电阻加热，绝缘体放置在坩埚和坩埚腔周围。碳坩埚的源材料设置在坩埚腔的第一区域，单晶种子放置在坩埚腔的第二区域。然后进行第一生长阶段，其中坩埚腔的第一区域和第二区域在基本上等温条件下被加热至至少碳化硅的升华温度。然后，进行第二生长阶段，其中在坩埚腔的第一和第二区域之间设置温度梯度，使得第二坩埚区域中的种子保持在比第一坩埚区域的温度低的温度。

4. 发明授权

US5683507A Apparatus for growing large silicon carbide single crystals 失效
标题翻译：用于生长大型碳化硅单晶的装置
公开(公告)号：US5683507A
公开(公告)日：1997-11-04
申请号：US523303
申请日：1995-09-05
申请人： Donovan L. Barrett , Raymond G. Seidensticker, deceased , Richard H. Hopkins
发明人： Donovan L. Barrett , Raymond G. Seidensticker, deceased , Richard H. Hopkins
IPC分类号： C30B23/00 , C30B35/00
CPC分类号： C30B23/00 , C30B29/36 , Y10S117/90 , Y10S117/902 , Y10T117/10 , Y10T117/1008 , Y10T117/1016
摘要： An apparatus for growing single-polytype, single crystals of silicon carbide utilizing physical vapor transport as the crystal growth technique. The apparatus has a furnace which has a carbon crucible with walls that border and define a crucible cavity. A silicon carbide source material provided at a first location of the crucible cavity, and a monocrystalline silicon carbide seed is provided at a second location of the crucible cavity. A heat path is also provided in the furnace above the crucible cavity. The crucible has a stepped surface that extends into the crucible cavity. The stepped surface has a mounting portion upon which the seed crystal is mounted. The mounting portion of the stepped surface is bordered at one side by the crucible cavity and is bordered at an opposite side by the furnace heat path. The stepped surface also has a sidewall that is bordered at one side by and surrounds the furnace heat path. The apparatus may also have a thermal insulating member, in which a side of the stepped surface sidewall opposite to the furnace heat path is bordered by the thermal insulating member.
摘要翻译：使用物理气相传输作为晶体生长技术生长单多晶单晶碳化硅的装置。该装置具有炉子，该炉具有边界并限定坩埚腔的壁的碳坩埚。提供在坩埚腔的第一位置处的碳化硅源材料和在坩埚腔的第二位置处提供单晶碳化硅种子。在坩埚腔上方的炉内还设置有热路径。坩埚具有延伸到坩埚腔中的台阶表面。台阶表面具有安装在晶圆上的安装部分。阶梯式表面的安装部分在坩埚腔的一侧边界，并且通过炉子热路与另一边相接。台阶表面还具有侧壁，并且围绕炉子热路径包围着侧壁。该设备还可以具有绝热构件，其中与炉热路相对的台阶表面侧壁的一侧由隔热构件界定。

5. 发明申请

US20090220788A1 METHOD FOR SYNTHESIZING ULTRAHIGH-PURITY SILICON CARBIDE 审中-公开
标题翻译：用于合成超高纯度碳化硅的方法
公开(公告)号：US20090220788A1
公开(公告)日：2009-09-03
申请号：US12096306
申请日：2006-12-07
申请人： Donovan L. Barrett , Jihong Chen , Richard H. Hopkins , Carl J. Johnson
发明人： Donovan L. Barrett , Jihong Chen , Richard H. Hopkins , Carl J. Johnson
IPC分类号： C01B31/36 , B32B5/16
CPC分类号： C04B35/573 , C01B32/956 , C04B2235/422 , C04B2235/428 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , Y10T428/2982
摘要： Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least one end of an interior of the crucible is lined with C powder purified in the above manner. An Si+C mixture is formed with C powder purified in the above manner and Si powder or granules. The lined crucible is charged with the Si+C mixture. Adsorbed gaseous species and elements are reduced from the Si+C mixture and the crucible by way of a vacuum and an elevated temperature that is sufficient to cause reduction but which does not exceed the melting point of Si. Thereafter, by way of a vacuum and an elevated temperature, the Si+C mixture is caused to react and form polycrystalline SiC.
摘要翻译：吸附的气态物质和碳（C）粉末和石墨坩埚中的元素通过真空和足以引起还原的升高的温度被还原。坩埚内壁的壁和至少一端用上述方式纯化的C粉末排列。用上述方法纯化的C粉末和Si粉末或颗粒形成Si + C混合物。衬里的坩埚中加入Si + C混合物。吸附的气态物质和元素通过真空和升高的温度从Si + C混合物和坩埚中还原，足以引起还原但不超过Si的熔点。此后，通过真空和升高的温度，使Si + C混合物反应并形成多晶SiC。

6. 发明申请

US20080190355A1 Low-Doped Semi-Insulating Sic Crystals and Method 审中-公开
标题翻译：低掺杂半绝缘矽晶体和方法
公开(公告)号：US20080190355A1
公开(公告)日：2008-08-14
申请号：US11629584
申请日：2005-07-06
申请人： Jihong Chen , Ilya Zwieback , Avinash K. Gupta , Donovan L. Barrett , Richard H. Hopkins , Edward Semenas , Thomas A. Anderson , Andrew E. Souzis
发明人： Jihong Chen , Ilya Zwieback , Avinash K. Gupta , Donovan L. Barrett , Richard H. Hopkins , Edward Semenas , Thomas A. Anderson , Andrew E. Souzis
IPC分类号： C30B33/02 , H01B1/02
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/02581 , H01L21/02631
摘要： The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF/mm2 and preferably below 1 pF/mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm−3, and preferably to below 1·1016 cm−3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors. The deep level impurity comprises one of selected metals from the periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB and VIIIB. Vanadium is a preferred deep level element. In addition to controlling the resistivity and capacitance, a further advantage of the invention is an increase in electrical uniformity over the entire crystal and reduction in the density of crystal defects.
摘要翻译：本发明涉及用于半导体器件的半绝缘碳化硅的衬底及其制造方法。基板的电阻率高于106欧姆 - 厘米，优选高于108欧姆 - 厘米，最优选高于109欧姆 - 厘米，电容低于5 pF / mm2，最好低于1 pF / mm2。基板的电学特性由少量的加入的深度杂质控制，其浓度足够大以控制电气行为，但足够小以避免结构缺陷。底物具有无意的背景杂质浓度，包括浅供体和受体，故意降低至5.1016cm-3以下，优选低于1.1016cm-3，深层杂质的浓度较高，优选至少高两倍，比浅受体和浅供体的浓度之间的差异。深层杂质包括选自周期性基团IB，IIB，IIIB，IVB，VB，VIB，VIIB和VIIIB的金属之一。钒是首选的深层元素。除了控制电阻率和电容之外，本发明的另一个优点是在整个晶体上的电均匀性的增加和晶体缺陷密度的降低。

7. 发明授权

US5968261A Method for growing large silicon carbide single crystals 失效
标题翻译：生长大型碳化硅单晶的方法
公开(公告)号：US5968261A
公开(公告)日：1999-10-19
申请号：US845119
申请日：1997-04-21
申请人： Donovan L. Barrett , Raymond G. Seidensticker, deceased , Richard H. Hopkins
发明人： Donovan L. Barrett , Raymond G. Seidensticker, deceased , Richard H. Hopkins
IPC分类号： C30B23/00 , C30B15/00
CPC分类号： C30B23/00 , C30B29/36 , Y10S117/90 , Y10S117/902 , Y10T117/10 , Y10T117/1008 , Y10T117/1016
摘要： An apparatus for growing single-polytype, single crystals of silicon carbide utilizing physical vapor transport as the crystal growth technique. The apparatus has a furnace which has a carbon crucible with walls that border and define a crucible cavity. A silicon carbide source material provided at a first location of the crucible cavity, and a monocrystalline silicon carbide seed is provided at a second location of the crucible cavity. A heat path is also provided in the furnace above the crucible cavity. The crucible has a stepped surface that extends into the crucible cavity. The stepped surface has a mounting portion upon which the seed crystal is mounted. The mounting portion of the stepped surface is bordered at one side by the crucible cavity and is bordered at an opposite side by the furnace heat path. The stepped surface also has a sidewall that is bordered at one side by and surrounds the furnace heat path. The apparatus may also have a thermal insulating member, in which a side of the stepped surface sidewall opposite to the furnace heat path is bordered by the thermal insulating member.
摘要翻译：使用物理气相传输作为晶体生长技术生长单多晶单晶碳化硅的装置。该装置具有炉子，该炉具有边界并限定坩埚腔的壁的碳坩埚。提供在坩埚腔的第一位置处的碳化硅源材料和在坩埚腔的第二位置处提供单晶碳化硅种子。在坩埚腔上方的炉内还设置有热路径。坩埚具有延伸到坩埚腔中的台阶表面。台阶表面具有安装在晶圆上的安装部分。阶梯式表面的安装部分在坩埚腔的一侧边界，并且通过炉子热路与另一边相接。台阶表面还具有侧壁，并且围绕炉子热路径包围着侧壁。该设备还可以具有绝热构件，其中与炉热路相对的台阶表面侧壁的一侧由隔热构件界定。

8. 发明授权

US5788768A Feedstock arrangement for silicon carbide boule growth 失效
标题翻译：碳化硅坯生长的原料排列
公开(公告)号：US5788768A
公开(公告)日：1998-08-04
申请号：US852974
申请日：1997-05-08
申请人： Donovan L. Barrett , Richard H. Hopkins
发明人： Donovan L. Barrett , Richard H. Hopkins
IPC分类号： C30B23/00 , C30B35/00
CPC分类号： C30B23/00 , C30B29/36 , Y10T117/10
摘要： A silicon carbide feedstock charge for growing silicon carbide boules in a physical vapor transport system. The feedstock charge includes silicon carbide particles, as well as any dopant material, if required, in a structure which is rigid and self supportable. An elongated feedstock charge may be moved toward the seed crystal as the feedstock is depleted during boule growth. The feedstock charge may be tailored to provide a non-uniform flux for growing more planar boule faces.
摘要翻译：用于在物理蒸汽输送系统中生长碳化硅颗粒的碳化硅原料装料。如果需要，原料电荷包括碳化硅颗粒以及任何掺杂剂材料，其结构是刚性和自支撑的。当原料在毛坯生长期间耗尽时，细长的原料装料可以向晶种移动。可以调整原料装料以提供用于生长更平面的坯料面的不均匀的通量。

9. 发明申请

US20100018455A1 System for Forming SiC Crystals Having Spatially Uniform Doping Impurities 有权
标题翻译：用于形成具有空间均匀掺杂杂质的SiC晶体的系统
公开(公告)号：US20100018455A1
公开(公告)日：2010-01-28
申请号：US12573288
申请日：2009-10-05
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback , Donovan L. Barrett , Andrew E. Souzis
IPC分类号： C30B23/06
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：物理蒸汽输送系统包括装有源材料的生长室和间隔开的晶种，以及至少一个具有在其内部和外部之间延伸的至少一个毛细管的胶囊，其中胶囊的内部装有掺杂剂每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

10. 发明申请

US20090169459A1 Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth 有权
标题翻译：铯晶体生长中的氮气的腔内吸收
公开(公告)号：US20090169459A1
公开(公告)日：2009-07-02
申请号：US12067258
申请日：2006-09-27
申请人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
发明人： Ilya Zwieback , Donovan L. Barrett , Avinash K. Gupta
IPC分类号： C30B23/00 , C01B31/36
CPC分类号： C30B29/36 , C30B23/00 , H01L21/02378 , H01L21/02529 , H01L21/02576 , H01L21/02631
摘要： In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.
摘要翻译：在晶体生长方法中，在存在第一真空压力的情况下将晶体生长室（2）的内部加热到第一温度，由此吸收在室内的材料（4）中吸收的至少一种气体被脱气。然后在存在比第一真空压力更高的第二真空压力的情况下，在第二较高温度下将室的内部暴露于惰性气体。然后将室中的惰性气体压力减小到第一和第二真空压力之间的第三真空压力，并且室内的温度降低到第一和第二温度之间的第三温度，由此源材料（10 ）蒸发并沉积在室内的晶种（12）上。

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